Bias voltagecontrolledphotoluminescencefrom b-In2S3 thin films

b-In2S3 thin filmsweredepositedonIndiumTinOxidesubstratesusingtheChemical SprayPyrolysistechnique.Metalcontactwasdepositedoverthe b-In2S3 thin filmto formahetero-structureofthetypeITO/b-In2S3/Metal.Theintensityoftwophoto- luminescenceemissionsfromthe b-In2S3 thin film,centeredat520and690nmcould be variedbytheapplicationofanexternalbiasvoltagetothishetero-structure.The emissionscouldbeswitchedonoroffdependinguponthemagnitudeoftheexternal appliedbiasvoltage.Thusthepresenceoftwoconductingstatesinthishetero-structure could beidentified.Thetemporalvariationinintensityofthephotoluminescence emissionwiththeapplicationofthebiasvoltagehasalsobeenstudied.Thecondition underwhichphotoluminescencequenchingoccurshasbeenrepresentedbyafirst order differentialequationbetweendiffusionlengthandcarrierconcentration

Nuclear organisation and epigenetic regulation of gene expression in Dictyostelium discoideum

A series of vectors for the over-expression of tagged proteins in Dictyostelium were designed, constructed and tested. These vectors allow the addition of an N- or C-terminal tag (GFP, RFP, 3xFLAG, 3xHA, 6xMYC and TAP) with an optimized polylinker sequence and no additional amino acid residues at the N or C terminus. Different selectable markers (Blasticidin and gentamicin) are available as well as an extra chromosomal version; these allow copy number and thus expression level to be controlled, as well as allowing for more options with regard to complementation, co- and super-transformation. Finally, the vectors share standardized cloning sites, allowing a gene of interest to be easily transfered between the different versions of the vectors as experimental requirements evolve. The organisation and dynamics of the Dictyostelium nucleus during the cell cycle was investigated. The centromeric histone H3 (CenH3) variant serves to target the kinetochore to the centromeres and thus ensures correct chromosome segregation during mitosis and meiosis. A number of Dictyostelium histone H3-domain containing proteins as GFP-tagged fusions were expressed and it was found that one of them functions as CenH3 in this species. Like CenH3 from some other species, Dictyostelium CenH3 has an extended N-terminal domain with no similarity to any other known proteins. The targeting domain, comprising α-helix 2 and loop 1 of the histone fold is required for targeting CenH3 to centromeres. Compared to the targeting domain of other known and putative CenH3 species, Dictyostelium CenH3 has a shorter loop 1 region. The localisation of a variety of histone modifications and histone modifying enzymes was examined. Using fluorescence in situ hybridisation (FISH) and CenH3 chromatin-immunoprecipitation (ChIP) it was shown that the six telocentric centromeres contain all of the DIRS-1 and most of the DDT-A and skipper transposons. During interphase the centromeres remain attached to the centrosome resulting in a single CenH3 cluster which also contains the putative histone H3K9 methyltransferase SuvA, H3K9me3 and HP1 (heterochromatin protein 1). Except for the centromere cluster and a number of small foci at the nuclear periphery opposite the centromeres, the rest of the nucleus is largely devoid of transposons and heterochromatin associated histone modifications. At least some of the small foci correspond to the distal telomeres, suggesting that the chromosomes are organised in a Rabl-like manner. It was found that in contrast to metazoans, loading of CenH3 onto Dictyostelium centromeres occurs in late G2 phase. Transformation of Dictyostelium with vectors carrying the G418 resistance cassette typically results in the vector integrating into the genome in one or a few tandem arrays of approximately a hundred copies. In contrast, plasmids containing a Blasticidin resistance cassette integrate as single or a few copies. The behaviour of transgenes in the nucleus was examined by FISH, and it was found that low copy transgenes show apparently random distribution within the nucleus, while transgenes with more than approximately 10 copies cluster at or immediately adjacent to the centromeres in interphase cells regardless of the actual integration site along the chromosome. During mitosis the transgenes show centromere-like behaviour, and ChIP experiments show that transgenes contain the heterochromatin marker H3K9me2 and the centromeric histone variant H3v1. This clustering, and centromere-like behaviour was not observed on extrachromosomal transgenes, nor on a line where the transgene had integrated into the extrachromosomal rDNA palindrome. This suggests that it is the repetitive nature of the transgenes that causes the centromere-like behaviour. A Dictyostelium homolog of DET1, a protein largely restricted to multicellular eukaryotes where it has a role in developmental regulation was identified. As in other species Dictyostelium DET1 is nuclear localised. In ChIP experiments DET1 was found to bind the promoters of a number of developmentally regulated loci. In contrast to other species where it is an essential protein, loss of DET1 is not lethal in Dictyostelium, although viability is greatly reduced. Loss of DET1 results in delayed and abnormal development with enlarged aggregation territories. Mutant slugs displayed apparent cell type patterning with a bias towards pre-stalk cell types.

High-Speed Semiconductor Lasers based on Low-Dimensional Active Materials for Optical Telecommunication

The scope of this work is the fundamental growth, tailoring and characterization of self-organized indium arsenide quantum dots (QDs) and their exploitation as active region for diode lasers emitting in the 1.55 µm range. This wavelength regime is especially interesting for long-haul telecommunications as optical fibers made from silica glass have the lowest optical absorption. Molecular Beam Epitaxy is utilized as fabrication technique for the quantum dots and laser structures. The results presented in this thesis depict the first experimental work for which this reactor was used at the University of Kassel. Most research in the field of self-organized quantum dots has been conducted in the InAs/GaAs material system. It can be seen as the model system of self-organized quantum dots, but is not suitable for the targeted emission wavelength. Light emission from this system at 1.55 µm is hard to accomplish. To stay as close as possible to existing processing technology, the In(AlGa)As/InP (100) material system is deployed. Depending on the epitaxial growth technique and growth parameters this system has the drawback of producing a wide range of nano species besides quantum dots. Best known are the elongated quantum dashes (QDash). Such structures are preferentially formed, if InAs is deposited on InP. This is related to the low lattice-mismatch of 3.2 %, which is less than half of the value in the InAs/GaAs system. The task of creating round-shaped and uniform QDs is rendered more complex considering exchange effects of arsenic and phosphorus as well as anisotropic effects on the surface that do not need to be dealt with in the InAs/GaAs case. While QDash structures haven been studied fundamentally as well as in laser structures, they do not represent the theoretical ideal case of a zero-dimensional material. Creating round-shaped quantum dots on the InP(100) substrate remains a challenging task. Details of the self-organization process are still unknown and the formation of the QDs is not fully understood yet. In the course of the experimental work a novel growth concept was discovered and analyzed that eases the fabrication of QDs. It is based on different crystal growth and ad-atom diffusion processes under supply of different modifications of the arsenic atmosphere in the MBE reactor. The reactor is equipped with special valved cracking effusion cells for arsenic and phosphorus. It represents an all-solid source configuration that does not rely on toxic gas supply. The cracking effusion cell are able to create different species of arsenic and phosphorus. This constitutes the basis of the growth concept. With this method round-shaped QD ensembles with superior optical properties and record-low photoluminescence linewidth were achieved. By systematically varying the growth parameters and working out a detailed analysis of the experimental data a range of parameter values, for which the formation of QDs is favored, was found. A qualitative explanation of the formation characteristics based on the surface migration of In ad-atoms is developed. Such tailored QDs are finally implemented as active region in a self-designed diode laser structure. A basic characterization of the static and temperature-dependent properties was carried out. The QD lasers exceed a reference quantum well laser in terms of inversion conditions and temperature-dependent characteristics. Pulsed output powers of several hundred milli watt were measured at room temperature. In particular, the lasers feature a high modal gain that even allowed cw-emission at room temperature of a processed ridge wave guide device as short as 340 µm with output powers of 17 mW. Modulation experiments performed at the Israel Institute of Technology (Technion) showed a complex behavior of the QDs in the laser cavity. Despite the fact that the laser structure is not fully optimized for a high-speed device, data transmission capabilities of 15 Gb/s combined with low noise were achieved. To the best of the author`s knowledge, this renders the lasers the fastest QD devices operating at 1.55 µm. The thesis starts with an introductory chapter that pronounces the advantages of optical fiber communication in general. Chapter 2 will introduce the fundamental knowledge that is necessary to understand the importance of the active region`s dimensions for the performance of a diode laser. The novel growth concept and its experimental analysis are presented in chapter 3. Chapter 4 finally contains the work on diode lasers.

Molecular Beam Epitaxial Growth of III-V Semiconductor Nanostructures on Silicon Substrates

The main focus and concerns of this PhD thesis is the growth of III-V semiconductor nanostructures (Quantum dots (QDs) and quantum dashes) on silicon substrates using molecular beam epitaxy (MBE) technique. The investigation of influence of the major growth parameters on their basic properties (density, geometry, composition, size etc.) and the systematic characterization of their structural and optical properties are the core of the research work. The monolithic integration of III-V optoelectronic devices with silicon electronic circuits could bring enormous prospect for the existing semiconductor technology. Our challenging approach is to combine the superior passive optical properties of silicon with the superior optical emission properties of III-V material by reducing the amount of III-V materials to the very limit of the active region. Different heteroepitaxial integration approaches have been investigated to overcome the materials issues between III-V and Si. However, this include the self-assembled growth of InAs and InGaAs QDs in silicon and GaAx matrices directly on flat silicon substrate, sitecontrolled growth of (GaAs/In0,15Ga0,85As/GaAs) QDs on pre-patterned Si substrate and the direct growth of GaP on Si using migration enhanced epitaxy (MEE) and MBE growth modes. An efficient ex-situ-buffered HF (BHF) and in-situ surface cleaning sequence based on atomic hydrogen (AH) cleaning at 500 °C combined with thermal oxide desorption within a temperature range of 700-900 °C has been established. The removal of oxide desorption was confirmed by semicircular streaky reflection high energy electron diffraction (RHEED) patterns indicating a 2D smooth surface construction prior to the MBE growth. The evolution of size, density and shape of the QDs are ex-situ characterized by atomic-force microscopy (AFM) and transmission electron microscopy (TEM). The InAs QDs density is strongly increased from 108 to 1011 cm-2 at V/III ratios in the range of 15-35 (beam equivalent pressure values). InAs QD formations are not observed at temperatures of 500 °C and above. Growth experiments on (111) substrates show orientation dependent QD formation behaviour. A significant shape and size transition with elongated InAs quantum dots and dashes has been observed on (111) orientation and at higher Indium-growth rate of 0.3 ML/s. The 2D strain mapping derived from high-resolution TEM of InAs QDs embedded in silicon matrix confirmed semi-coherent and fully relaxed QDs embedded in defectfree silicon matrix. The strain relaxation is released by dislocation loops exclusively localized along the InAs/Si interfaces and partial dislocations with stacking faults inside the InAs clusters. The site controlled growth of GaAs/In0,15Ga0,85As/GaAs nanostructures has been demonstrated for the first time with 1 μm spacing and very low nominal deposition thicknesses, directly on pre-patterned Si without the use of SiO2 mask. Thin planar GaP layer was successfully grown through migration enhanced epitaxy (MEE) to initiate a planar GaP wetting layer at the polar/non-polar interface, which work as a virtual GaP substrate, for the GaP-MBE subsequently growth on the GaP-MEE layer with total thickness of 50 nm. The best root mean square (RMS) roughness value was as good as 1.3 nm. However, these results are highly encouraging for the realization of III-V optical devices on silicon for potential applications.

Pre-Attentive Segmentation in the Primary Visual Cortex

Stimuli outside classical receptive fields have been shown to exert significant influence over the activities of neurons in primary visual cortexWe propose that contextual influences are used for pre-attentive visual segmentation, in a new framework called segmentation without classification. This means that segmentation of an image into regions occurs without classification of features within a region or comparison of features between regions. This segmentation framework is simpler than previous computational approaches, making it implementable by V1 mechanisms, though higher leve l visual mechanisms are needed to refine its output. However, it easily handles a class of segmentation problems that are tricky in conventional methods. The cortex computes global region boundaries by detecting the breakdown of homogeneity or translation invariance in the input, using local intra-cortical interactions mediated by the horizontal connections. The difference between contextual influences near and far from region boundaries makes neural activities near region boundaries higher than elsewhere, making boundaries more salient for perceptual pop-out. This proposal is implemented in a biologically based model of V1, and demonstrated using examples of texture segmentation and figure-ground segregation. The model performs segmentation in exactly the same neural circuit that solves the dual problem of the enhancement of contours, as is suggested by experimental observations. Its behavior is compared with psychophysical and physiological data on segmentation, contour enhancement, and contextual influences. We discuss the implications of segmentation without classification and the predictions of our V1 model, and relate it to other phenomena such as asymmetry in visual search.

Visual Segmentation without Classification in a Model of the Primary Visual Cortex

Stimuli outside classical receptive fields significantly influence the neurons' activities in primary visual cortex. We propose that such contextual influences are used to segment regions by detecting the breakdown of homogeneity or translation invariance in the input, thus computing global region boundaries using local interactions. This is implemented in a biologically based model of V1, and demonstrated in examples of texture segmentation and figure-ground segregation. By contrast with traditional approaches, segmentation occurs without classification or comparison of features within or between regions and is performed by exactly the same neural circuit responsible for the dual problem of the grouping and enhancement of contours.

Room-temperature continuous-wave operation of GaInNAs/GaAs quantum dot laser with GaAsN barrier grown by solid source molecular beam epitaxy

We present the results of GaInNAs/GaAs quantum dot structures with GaAsN barrier layers grown by solid source molecular beam epitaxy. Extension of the emission wavelength of GaInNAs quantum dots by ~170nm was observed in samples with GaAsN barriers in place of GaAs. However, optimization of the GaAsN barrier layer thickness is necessary to avoid degradation in luminescence intensity and structural property of the GaInNAs dots. Lasers with GaInNAs quantum dots as active layer were fabricated and room-temperature continuous-wave lasing was observed for the first time. Lasing occurs via the ground state at ~1.2μm, with threshold current density of 2.1kA/cm[superscript 2] and maximum output power of 16mW. These results are significantly better than previously reported values for this quantum-dot system.

Análisis de algunos de los aspectos de la segregación socio espacial como limitante en la calidad de vida en Bogotá.

El presente trabajo es una reflexión alrededor de la evolución del espacio urbano de la Ciudad de Bogotá con el fin de evidenciar la incidencia que tienen para el hábitat y la calidad de vida, algunos factores de segregación socio espacial que aparentemente han incidido en la movilidad y la cohesión social. Igualmente, analizar las políticas públicas que se han llevado a cabo con el propósito de disminuir tal segregación. Se busca con ello, contribuir con las bases para la construcción de alternativas que permitan disminuir los factores que promueven la segregación en el territorio.

El Gran París: el reto de superar las oscuras realidades de exclusión social en la ciudad de las luces

La exclusión social en París ha alcanzado niveles alarmantes generando un malestar social importante en los franceses, llegando incluso a transformarse en protestas callejeras como en el caso de los disturbios de 2005. Existe una segregación espacial tácita, vinculada directamente con el origen socio-cultural, el nivel económico e incluso con la orientación sexual de sus habitantes. Este reportaje apunta a resaltar esta grave situación y las iniciativas tomadas por el gobierno de Nicolás Sarkozy y los desafíos que le esperan al nuevo mandatario galo François Hollande. A lo largo de esta investigación periodística se evidencian el origen de las ampliaciones urbanas en la capital francesa, los retos sociales que persisten en el París actual y la multiplicidad de actores sociales que están involucrados. Lejos de haber un consenso, los diferentes actores implicados difieren en las medidas a adoptar para paliar esta segregación. Estas medidas van desde potenciar el transporte público hasta la construcción de viviendas de interés social.

De aquí a mañana: expectativas a futuro en jóvenes de la Comuna IV de Soacha

Los jóvenes que afrontan un aislamiento social tienen expectativas de movilidad social como cualquier otro sector o clase social, basadas en la educación como vehículo principal para salir de la pobreza. Pese a ello, la valoración de la educación se produce en un nivel discursivo, ya que factores como la violencia barrial, el embarazo adolescente y la necesidad de generar ingresos, entre otros, compiten y a menudo ganan a las expectativas educativas de esos jóvenes.

“La Felicidad incluye a todos”. La construcción de un barrio mezclado en Bogotá.

El trabajo se enmarca en las discusiones relacionadas con segregación espacial, segregación social y construcción de barrios mezclados. Específicamente, selecciona el caso de La Felicidad: ciudad parque en Bogotá como un ejemplo que sirve para analizar las políticas públicas enfocadas en disminuir la segregación residencial en la ciudad a partir de la construcción de un vecindario que está compuesto por vivienda de interés social y vivienda regular. A partir de métodos cuantitativos y cualitativos se analiza cómo esta funcionando esta propuesta urbana.

Parque Lineal El Virrey 2006 - 2010: análisis de la aplicación de estrategias de inclusión contenidas en las políticas públicas de Bogotá en un espacio público significativo

Este estudio de caso hace principal énfasis en las estrategias de inclusión contenidas en la Política Pública de Mujer y Género y la Política Pública de Juventud con el fin de identificar su efectividad dentro del contexto Distrital y Local. Dicha identificación se realiza a través de la revisión de los programas específicos ejecutados entre 2006 a 2010, contenidos en los planes de desarrollo Distritales y Locales dirigidos a los grupos poblacionales específicos mujeres y jóvenes en el espacio público de la ciudad de Bogotá. Acto seguido, se centra la atención en el objeto de análisis de este trabajo, el Parque Lineal El Virrey Norte, en donde se establece la existencia o inexistencia de acciones concretas de inclusión social de carácter Distrital para contrarrestar el fenómeno de segregación socioespacial existente en la capital desde hace varios años, como se señala al inicio del trabajo. Finalmente, se analizan las Encuestas Bienales de Cultura de los años 2007 y 2009 realizadas por el Observatorio de Culturas con el objeto de comparar las tendencias existentes en la ciudad y en la localidad Chapinero, donde se localiza el espacio público significativo analizado en este estudio de caso, de las mujeres y jóvenes directamente relacionadas con inclusión social.

Clasificación de la epilepsia

Clasificación de la epilepsia. Basada en la ILAE, descripción semiologica y hallazgos electroencefalograficos.

Articulación entre los sistemas de transporte y el desarrollo urbano: análisis de los cambios físico-espaciales generados a partir de la implementación del Portal Suba de Transmilenio en Bogotá en el periodo 1998-2010

Desde la inauguración del Portal Suba de TransMilenio, han sido evidentes los cambios físico-espaciales en el sector donde fue implementado, materializándose en nuevos proyectos residenciales de alta densidad, centros comerciales, supermercados de grandes superficies, espacios públicos, y vías locales y principales, en un sector que antes de la aparición del portal se caracterizaba principalmente por ser una zona agro-industrial dedicada al cultivo de flores. No obstante, tales intervenciones parecen estar desarticuladas entre si. Por ejemplo, el centro comercial y el supermercado siguen un patrón de construcción cerrada, sin interacción abierta con el espacio público exterior y sin establecer otro tipo de dinámicas urbanas. Por otra parte, puede decirse que gracias a la implementación del portal, la estructura ecológica principal ha sufrido un deterioro importante siendo observable en la disminución significativa de zonas verdes así como en el descuido de los humedales localizados en esta localidad. Por lo tanto, es importante hacer hincapié en la relación sistemas de transporte – desarrollo urbano en tanto que son agentes transformadores del entorno, generadores de desarrollo y bienestar social, y catalizadores de espacios públicos mejor diseñados y más amables, de ser bien planificados y ejecutados, ya que, caso contrario, podrían acarrear efectos contraproducentes en cuanto a la articulación física de la ciudad, accesibilidad, segregación social y el impacto negativo sobre el medio ambiente.

The incidents of housing policies in the process of nesting the urban space (Buenos Aires, 1870-1999)

This article describes the housing policies displayed historically in B.A. that affected the processes of configuration and of giving hierarchy to the urban space. Since the process of modernization of B.A., at the end of the XIXth century, housing measures, urbanistic projects and political decisions have influenced the building of the city and the space distribution of their inhabitants: in this way, they have integrated some people and excluded others. No wonder, that, historically, popular sectors have established themselves in the South of the city (and in outskirt villages). These zones have been disregarded by the state, which has invested less in these areas. We will see how the connection between state housing policies and the population redistribution in the city, confirms the persistence of a strong process of urban and residential segregation that tends to expel the inhabitants of popular sectors and to attract the ones of the middle-class and high class sectors.