Bias voltagecontrolledphotoluminescencefrom b-In2S3 thin films
| Data(s) |
23/09/2014
23/09/2014
2011
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| Resumo |
b-In2S3 thin filmsweredepositedonIndiumTinOxidesubstratesusingtheChemical SprayPyrolysistechnique.Metalcontactwasdepositedoverthe b-In2S3 thin filmto formahetero-structureofthetypeITO/b-In2S3/Metal.Theintensityoftwophoto- luminescenceemissionsfromthe b-In2S3 thin film,centeredat520and690nmcould be variedbytheapplicationofanexternalbiasvoltagetothishetero-structure.The emissionscouldbeswitchedonoroffdependinguponthemagnitudeoftheexternal appliedbiasvoltage.Thusthepresenceoftwoconductingstatesinthishetero-structure could beidentified.Thetemporalvariationinintensityofthephotoluminescence emissionwiththeapplicationofthebiasvoltagehasalsobeenstudied.Thecondition underwhichphotoluminescencequenchingoccurshasbeenrepresentedbyafirst order differentialequationbetweendiffusionlengthandcarrierconcentration MaterialsScienceinSemiconductorProcessing14(2011)58–61 CochinUniversityofScienceandTechnology |
| Identificador | |
| Idioma(s) |
en |
| Publicador |
Elsevier |
| Palavras-Chave | #Thin films #Chemical SprayPyrolysis #Indium sulfide #Photoluminescence quenching #Voltage dependence |
| Tipo |
Article |
