Quantum-confined Stark effects of exciton states in V-shaped GaAs/AlxGa1-xAs quantum wires

Quantum-confined Stark effects are investigated theoretically in GaAs/AlxGa1-xAs quantum wires formed in V-grooved structures. The electronic structures of the V-shaped quantum wires are calculated within the effective mass envelope function theory in the presence of electric field. The binding energies of excitons are also studied by two-dimensional Fourier transformation and variational method. The blue Stark shifts are found when the electric field is applied in the growth direction. A possible mechanism in which the blueshifts of photoluminescence peaks are attributed to two factors, one factor comes from the asymmetric structure of quantum wire along the electric field and another factor arises from the electric-field-induced change of the Coulomb interaction. The numerical results are compared with the recent experiment measurement.

Characterization of GaSb substrate wafers for MOCVD III-V antimonides

The qualities of GaSb substrates commonly used for the preparation of III-V antimonide epilayers were studied before and after growing GaInAsSb multi-layers by MOCVD using PL, FTIR and DCXD together with the electrical properties and EPD value. The correlation between the substrate qualities and epilayer properties was briefly discussed. The good property epilayers of GaInAsSb and, then, the high preformance of 2.3 um photodetectors were achieved only using the good quality GaSb wafers as the substrates.

III-V族化合物半导体超晶格的喇曼散射研究

于G批量导入至Hzhangdi

Design and Fabrication of Low-microwave loss Coplannar Waveguide and precise V groove on Silicon Substrate for Optoelectronic Packaging - art. no. 601938

Optoelectronic packaging has become a most important factor that influences the final performance and cost of the module. In this paper, low microwave loss coplanar waveguide(CPW) on high resistivity silicon(HRS) and precise V groove in silicon substrate were successfully fabricated. The microwave attenuation of the CPW made on HRS with the simple process is lower than 2 dB/cm in the frequency range of 0 similar to 26GHz, and V groove has the accuracy in micro level and smooth surface. These two techniques built a good foundation for high frequency packaging and passive coupling of the optoelectronic devices. Based on these two techniques, a simple high resistivity silicon substrate that integrated V groove and CPW for flip-chip packaging of lasers was completed. It set a good example for more complicate optoelectronic packaging.

Controlled growth of III-V compound semiconductor nano-structures and their application in quantum-devices

Various techniques on the growth of self-assembled compound semiconductor nano-structures (quantum dots, QDs) have been tried to enhance the controlling on size, density, emitting wavelength, uniformity in size and ordering in location of the QDs. Optimized growth conditions have been used in the application of the QD materials in opto-electronic devices. High-power long-lifetime quantum-dot laser-diodes (QD-LDs) emitting near 1 mu m, QD-LDs emitting in red-light range, 1.3 mu m QD-LDs on GaAs substrate and quantum-dot super-luminescent diodes (QD-SLDs) have successfully been achieved.

A V-shaped module technique for promoting generation photocurrent density of silicon solar cells

A V-shaped solar cell module consists of two tilted mono-crystalline cells [J. Li, China Patent No. 200410007708.6 (March, 2004)]. The angle included between the two tilted cells is 90 degrees. The two cells were fabricated by using polished silicon wafers. The scheme of both-side polished wafers has been proposed to reduce optical loss. Compared to solar cells in a planar way, the V-shaped structure enhances external quantum efficiency and leads to an increase of 15% in generation photocurrent density. The following three kinds of trapped photons are suggested to contribute to the increase: (1) infrared photons converted from visible photons due to a transformation mechanism, (2) photons reflected from top contact metal, and (3) a residual reflection which can not be eliminated by an antireflection coating.

用不对称的P/V操作设计并发算法

多线程并发是提高系统性能的常用手段,文章提出了一种用信号量的不对称P/V操作来设计多线程并发算法的新思路,这种思路适合于设计多线程同步程序以解决某些具有复杂同步语义要求的问题,而这些问题用传统的方法很难得到简洁高效的求解。为了演示这种新思路的特点和优点,笔者对几个常见问题(读写锁、排队锁和记录锁)给出了新的算法设计以及实现。实验数据表明,采用这种思路设计的算法在算法复杂度,读写速度和资源使用方面相对于传统的算法存在较大优势。

带V形隔热膜封闭空间内自然对流换热的数值研究

本文通过涡量-流函数法，对带V形隔热膜的平板型太阳能集热器二维封闭空间内自然对流进行了数值计算，定量分析了Rα、集热器倾角、V形膜开口角、H_v/H四个参数对换热的影响，为这种集热器的设计提供了依据。

V形隔热膜平板集热器性能的研究

本文报道了V形隔热膜平板集热器性能的理论与实验研究结果。在平板集热器的吸热板与盖板之间设置一层透明的V形膜能有效地抑制自然对流换热，提高集热效率。这种集热器性能好，造价低，适于推广应用。

Dressed multi-wave mixing in a V-type four-level atomic system

The dressed four- and six-wave mixings in a V-type four-level system are considered. Under two different dressed conditions, two- and three-photon resonant Autler-Townes splittings, accompanied by enhancement and suppression of wave mixing signal, are obtained analytically. Meanwhile, an electromagnetic induced transparency of multi-wave mixing is presented, which shows multiple peaks and asymmetric effects caused by one-photon, two-photon and three-photon resonances, separately. The slow light propagation multiple region of multi-wave mixing signal is also obtained.

Ti-V-Cr固溶体储氢合金的结构及电化学性能研究

本论文首先研究了Ni、Zr分别对Ti-V－Cr固溶体储氢合金中Cr和Ti部分取代的影响，得到了性能良好的Ti0．17Zr0．08V0．35Cr0．10Ni030基质合金。在此基础上进一步研究了入甄、B、Fe、Co、Al元素的添加或取代对基质合金的结构及电化学性能的影响。采用XRD、ICP、SEM一EDX、XPS、EIS、线性极化和阳极极化等表征手段对Ti一V－Cr固溶体储氢合金的结构及电化学性能进行分析和表征，主要结果如下：①Ti一V－Cr合金自身在碱性电解液中几乎无电化学活性。当用Ni部分取代Cr后，合金中出现具有电化学活性的第二相，其电化学性能得到有效地改善和提高。②Ti0.25-xZr_xV0.35Cr0.1Ni0.3（x＝0．05-0．15）合金主要是由bcc相和c14Laves相组成。随Zr含量从0．05增加到0．08，合金电极的放电容量和倍率放电能力增加；当x继续从0．08增加到0．15时，其变化较小。合金电极的电荷转移电阻随x增加而降低，当x在0．08到0．15之间变化时，电荷转移电阻变化也比较小。表明电荷转移电阻的大小与合金的电化学性能密切相关。③经过50次充、放电循环后，Tio．17zr"sV时scrol0Ni03。合金电极在303K和313K的放电容量能保持在90％以上；在70℃时的放电容量仍能达到275mA扮g。根据不同温度时的交换电流密度，计算了Ti。，17Zr008V时SCr川0Ni030合金电极表面电化学反应的表观活化能，其值约为50kJ／mol。④通过Nln、B、Fe、C。、AI对Tio．17zroosvo35Crol0Nio3。合金基质的添加与取代的研究，得到了具有高容量的储氢合金。其中Tio．17Zr008Vo35Cro．10Ni020Mnol。合金室温最高放电容量达到390n1A扮g；在253一343K的温度范围内，Tiol7Zr08V035Cr0JONioz5Mnoos合金具有高的放电容量，其容量在167一298mA树g之间变化，但是这些合金的稳定性有待进一步的提高。⑤合金充、放电过程中，晶格的扭曲和膨胀、Zr和V的溶解使得合金结构发生变化；合金的严重粉化及表面致密氧化膜的形成，是导致Ti一V－Cr合金电化学性能的衰减的主要原因。

DETERMINATION OF THE SUBBAND ENERGY IN THE V-SHAPED POTENTIAL WELL OF DELTA-DOPED GAAS BY DEEP-LEVEL TRANSIENT SPECTROSCOPY

Using deep level transient spectroscopy (DLTS) the conduction-subband energy levels in a V-shaped potential well induced by Si-delta doping in GaAs were determined. Self-consistent calculation gives four subbands in the well below the Fermi level. Experimentally, two DLTS peaks due to electron emission from these subbands were observed. Another two subbands with low electron concentration are believed to be merged into the adjacent DLTS peak. A good agreement between self-consistent calculation and experiment was obtained. (C) 1994 American Institute of Physics.