993 resultados para Technical loss


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低损耗高强度碲酸盐玻璃光纤用光学材料的优化方案

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低损耗实芯碲酸盐光纤的非线性研究

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通过对陕西省土壤侵蚀的定量评估,探索省域尺度上土壤侵蚀定量评价制图方法,以期为第四次全国土壤侵蚀普查提供技术支撑。利用陕西省日降雨数据、土壤类型图、土地利用图、DEM、植被覆盖图,选择CSLE模型,在ArcGIS平台上计算研究区2006年土壤侵蚀量,并与水利部标准评价结果进行对比分析。探索了坡度坡长变换对土壤侵蚀的影响。定量化的评价结果能较好的反映气候、土壤及水保措施对土壤侵蚀的影响,比水利部标准评价结果更能反映实际侵蚀。坡度坡长变换后对土壤侵蚀有明显影响。在GIS支持下,通过土壤侵蚀模型进行定量评价,可高效、客观反映土壤侵蚀情况及其主要影响因子,对区域治理和有关决策有极其重要参考价值。为了准确真实的反映土壤侵蚀程度,必须进行坡度坡长变换。

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The diamond (100) facets deposited at initial 1.0% CH4 have been investigated using high resolution electron energy loss spectroscopy (HREELS). The diamond (100) facets grown at 800-degrees-C are terminated by CH2 radicals, and there is no detectable frequency shift compared with the characteristic frequencies of molecular subgroup CH2. Beside the CH2 vibration loss, CH bend loss (at 140 meV) of locally monohydrogenated dimer is detected for the diamond (100) facets grown at 1000-degrees-C. Dosing the (100) facets grown at 800-degrees-C with atomic hydrogen at 1*10(-6) mbar, the loss peak at 140 meV appears. It is suggested that there are enough separately vacant sites and uniformly dispersed monohydrogenated dimers on (100) facets. This structure relaxes the steric repulsion between the adjacent hydrogen atoms during the diamond (100) surface growth.

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By means of two dimension beam propagation method (2D-BPM) with high order Pade approximation, behaviors of SOI waveguide based bend intersections with variant bending radius are simulated and analized. The result shows that crosstalk of intersections decreases with the increase of bending radius and intersecting angle. Furthermore, loss and crosstalk characteristics of bend intersections formed by sine bend, cosine bend and arc bend are compared. Sine bend based structures are proved that it can present lowest loss and smallest crosstalk properties among the three and may find their wide application in the design of bend intersections and other more complicated photonic devices and circuits.

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Three kinds of coplanar waveguides (CPWs) are designed and fabricated on different silicon substrates---common low-resistivity silicon substrate (LRS), LRS with a 3μm-thick silicon oxide interlayer, and high-resistivity silicon (HRS) substrate. The results show that the microwave loss of a CPW on LRS is too high to be used, but it can be greatly reduced by adding a thick interlayer of silicon oxide between the CPW transmission lines and the LRS.A CPW directly on HRS shows a loss lower than 2dB/cm in the range of 0-26GHz and the process is simple,so HRS is a more suitable CPW substrate.

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A fitting process is used to measure the cavity loss and the quasi-Fermi-level separation for Fabry- Perot semiconductor lasers. From the amplified spontaneous emission (ASE) spectrum, the gain spectrum and single-pass ASE obtained by the Cassidy method are applied in the fitting process. For a 1550nm quantum well InGaAsP ridge waveguide laser, the cavity loss of about ~24cm~(-1) is obtained.