The Illinois Gap Analysis final report, 2006.

U.S. Geological Survey, Department of Interior Cooperative Agreement No. 14-48-0003-95-1090

Histoire des plantes de Dauphiné : contenant une préface historique, un dictionnaire des termes de botanique, les classes, les familles, les genres, & les herborisations des environs de Grenoble, de la Grande Chartreuse, de Briançon, de Gap & de Montelimar /

Some handwritten marginal notations.

Manuel des fabriciens, imprimé par ordre de Monseigneur [Nicolas Augustin de la Croix], l'evêque de Gap, à l'usage de son diocèse.

Mode of access: Internet.

A field experiment in the summertime use of open circuit television instruction to bridge the gap between high school and college.

Mode of access: Internet.

Ruggles of Red Gap,

Mode of access: Internet.

Operator's manual : lathe, engine, floor mounted, sliding bed gap, 17 to 28 in. rated swing, 50 in. open and 30 in. closed between centers ... (LeBlond Machine Tool Company model 17" Regal), (3416-828-3714).

Includes indexes.

Falling behind : the growing income gap in America : Democratic staff study of the Joint Economic Committee, Congress of the United States.

Cover title.

The effect of nuclear radiation on semiconductor devices; report to Air Research and Development Command, Wright Air Development Division.

Includes bibliography.

Before the California Highway Commission in re location of Skyline Boulevard, San Francisco to Santa Cruz; supplemental brief for San Lorenzo Valley route from Saratoga Gap to Santa Cruz.

"This brief supersedes the former brief filed by the proponent herein. It embodies all that is to be found in that brief relevant to the questions presented therein."

Semiconductor measurement technology:

Title varies slightly.

Toward a national semiconductor strategy : second annual report of the National Advisory Committee on Semiconductors.

"February 1991."

Controlling Long-Range Ordered Self-assembly of Solid-Binding Peptide Monolayers on Atomically Flat Layered Materials

Thesis (Master's)--University of Washington, 2016-06

Optics and Optoelectronics of Two-dimensional Semiconducting Monolayers and Heterostructures

Thesis (Ph.D.)--University of Washington, 2016-06

Enhanced spin injection efficiency in ferromagnet/semiconductor tunnel junctions

Within the ballistic transport picture, we have investigated the spin-polarized transport properties of a ferromagnetic metal/two-dimensional semiconductor (FM/SM) hybrid junction and an FM/FM/SM structure using quantum tunnelling theory. Our calculations indicate explicitly that the low spin injection efficiency (SIE) from an FM into an SM, compared with a ferromagnet/normal metal junction, originates from the mismatch of electron densities in the FM and SM. To enhance the SIE from an FM into an SM, we introduce another FM film between them to form FM/FM/SM double tunnel junctions, in which the quantum interference effect will lead to the current polarization exhibiting periodically oscillating behaviour, with a variation according to the thickness of the middle FM film and/or its exchange energy strength. Our results show that, for some suitable values of these parameters, the SIE can reach a very high level, which can also be affected by the electron density in the SM electrode.

The gap equations for spin singlet and triplet ferromagnetic superconductors

We derive gap equations for superconductivity in coexistence with ferromagnetism. We treat singlet and triplet states With either equal spin pairing (ESP) or opposite spin pairing (OSP) states, and study the behaviour of these states as a function of exchange splitting. For the s-wave singlet state we find that our gap equations correctly reproduce the Clogston-Chandrasekhar limiting behaviour and the phase diagram of the Baltensperger-Sarma equation (excluding the FFLO region). The singlet superconducting order parameter is shown to be independent of exchange splitting at zero temperature, as is assumed in the derivation of the Clogston-Chandrasekhar limit. P-wave triplet states of the OSP type behave similarly to the singlet state as a function of exchange splitting. On the other hand, ESP triplet states show a very different behaviour. In particular, there is no Clogston-Chandrasekhar limiting and the superconducting critical temperature, T-C, is actually increased by exchange splitting.