Strain and vacancy cluster behavior of vanadium and tungsten-doped Ba[Zr(0.10)Ti(0.90)]O(3) ceramics

Strain and vacancy clusters behavior of polycrystalline vanadium (V) and tungsten (W)-doped Ba[Zr(0.10)Ti(0.90)]O(3), (BZT:2%V) and (BZT:2%W) ceramics obtained by the mixed oxide method was evaluated. Substitution of V and W reduces the distortion of octahedral clusters, decreasing the Raman modes. Electron paramagnetic resonance data indicate that the addition of dopants leads to defects and symmetry changes in the BZT lattice. Remnant polarization and coercive field are affected by V and W substitution due the electron-relaxation mode. The unipolar strain E curves as a function of electric field reach its maximum value for BZT:2%V and BZT:2%W ceramics. (c) 2008 American Institute of Physics.

Electrochemical behaviour of heat-treated Al-Zn-Mg alloys in chloride solutions containing sulphate

The electrochemical corrosion and passivation of Al-5Zn-1.7Mg-0.23Cu-0.053Nb alloys, submitted to different heat treatments (cold-rolled, annealed, quenched and aged, and quenched in two steps and aged), in sulphate-containing chloride solutions, has been studied by means of cyclic polarization, electrochemical impedance spectroscopy (EIS), scanning electron microscopy (SEM), energy-dispersive X-ray (EDX), and X-ray photoelectron spectroscopy (XPS). The cyclic polarization curves showed that sulphate addition to the chloride solution produced a poor reproducible shift of the breakdown potential to more positive potentials. The repassivation potentials, much more reproducible, and practically separating the passive from the pitting potential region, were slightly displaced in the negative direction with that addition. When the alloys were potentiodynamically polarized in the passive potential region, sulphate was incorporated in the oxide film, thus precluding chloride ingress. In addition, Zn depletion was favoured, whereas Mg losses were avoided. Different equivalent circuits corresponding to different alloys and potentials in the passive and pitting regions were employed to account for the electrochemical processes taking place in each condition. This work shows that sulphate makes these alloys more sensitive to corrosion, increasing the fracture properties of the surface layer and favouring the pitting attack over greater areas than chloride alone. (C) 2002 Elsevier B.V. Ltd. All rights reserved.

Ferroelectric and dielectric properties of vanadium-doped Ba(Ti0.90Zr0.10)O-3 ceramics

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Color tunability of intense upconversion emission from Er3+-Yb3+ co-doped SiO2-Ta2O5 glass ceramic planar waveguides

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Erbium and ytterbium co-doped SiO2 : GeO2 planar waveguide prepared by the sol-gel route using an alternative precursor

The sol-gel method combined with a spin-coating technique has been successfully applied for the preparation of rare-earth doped silica:germania films used for the fabrication of erbium-doped waveguide amplifiers (EDWA), presenting several advantages over other methods for the preparation of thin films. As with other methods, the sol-gel route also shows some drawbacks, such as cracks related to the thickness of silica films and high hydrolysis rate of certain precursors such as germanium alkoxides. This article describes the preparation and optical characterization of erbium and ytterbium co-doped SiO2:GeO2 crack-free thick films prepared by the sol-gel route combined with a spin-coating technique using a chemically stable non-aqueous germanium oxide solution as an alternative precursor. The non-crystalline films obtained are planar waveguides exhibiting a single mode at 1,550 nm with an average thickness of 3.9 mu m presenting low percentages of porosity evaluated by the Lorentz-Lorenz Effective Medium Approximation, and low stress, according to the refractive index values measured in both transversal electric and magnetic polarizations. Weakly confining core layers (0.3% < Delta n < 0.75%) were obtained according to the refractive index difference between the core and buffer layers, suggesting that low-loss coupling EDWA may be obtained. The life time of the erbium I-4(13/2) metastable state was measured as a function of erbium concentration in different systems and based on these values it is possible to infer that the hydroxyl group was reduced and the formation of rare-earth clusters was avoided.

Sintering of tin oxide and its applications in electronics and processing of high purity optical glasses

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Photoluminescence in ZrO2 doped with Y and La

O objetivo deste trabalho é descrever a síntese e a caracterização óptica de uma solução sólida de óxido de zircônio contendo ítrio e lantânio. Foram misturados citrato de zircônio, nitrato de ítrio e nitrato de lantânio nas proporções 94 mol% ZrO2-6 mol% Y2O3 e 92 mol% ZrO2-6 mol % Y2O3-2 mol % La2O3. A análise de espectroscopia de absorção no infravermelho com tranformada de Fourier mostra material orgânico em decomposição e a análise térmica mostra a transformação de fases da zircônia tetragonal para monoclínica, a perda de água e a desidroxilação do zircônio. A análise por difração de raios X mostra formação de fases homogênea de ZrO2-Y2O3-La2O3 demonstrando que a adição de lantânio não provoca formação de fases, promovendo uma solução sólida baseada em zircônia cúbica. Os espectros de fotoluminescência mostram bandas de absorção em 562 nm e 572 nm (350 ºC) e bandas de absorção específicas em 543 nm, 561 nm, 614 nm e 641 nm (900 ºC). O efeito fotoluminescente a baixas temperaturas é causado por defeitos como (Y Zr,Y O)', (2Y Zr,V O)'' e V O. As emissões em 614 nm e 641 nm são causadas pela transição O-2p -> Zr-4d. Uma emissão em 543 nm pode ser atribuída a centros LaO8 com transição O-2p -> La-5d.

WO3 and ZnO-doped SnO2 ceramics as insulating material

SnO2 ceramics doped with ZnO and WO3 were prepared by mixed oxide method. The effect of ZnO and WO3 additives could be explained by the substitution of Sn4+ by Zn2+ and W6+. The addition of WO3 inhibits the grain growth due to the segregation of SnZnWO8 and ZnWO6 at the grain boundaries without strong influence on the densification process. The electrical characterization (log E x log J) shows that the ternary system SnO2-ZnO-WO3 exhibits a very high resistivity of around 10(14) Omega M. Independently of the WO3 concentration, the electrical conductivity of the Sn02-ZnO-WO3 system is always lower than that of the undoped tin dioxide. (C) 2005 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

Dependence of La2O3 content on the nonlinear electrical behaviour of ZnO, CoO and Ta2O5 doped SnO2 varistors

The effects of La2O3 on the properties of (Zn, Co, Ta) doped SnO2 varistors were investigated in this study. The samples with different La2O3 concentrations were sintered at 1400 degrees C for 2 h and their properties were characterized by XRD, SEM, I-V and impedance spectroscopy. The grain size was found to decrease from 13 pm to 9 gm with increasing La2O3 content. The addition of rare earth element leads to increase the nonlinear coefficient and the breakdown voltage. The enhancement was expected to arise from the possible segregation of lanthanide ion due to its larger ionic radius to the grain boundaries, thereby modifying its electrical characteristics. Furthermore, the dopants such as La may help in the adsorption of O' to O '' at the grain boundaries characteristics. (c) 2006 Elsevier B.V. All rights reserved.

Microstructural evolution during sintering of CoO doped SnO2 ceramics

Addition of 0.5 mol% of CoO into SnO2 promotes densification of this oxide to 99% of the theoretical density during sintering. TEM in this system reveals that after sintering at 1210 degrees C a secondary phase of Co2SnO4 is precipitated at the SnO2 grain boundaries during cooling. This phase is formed by diffusion of Co ions from the bulk to the grain boundary during sintering leaving needle-like defects at the grain bulk. The high resolution TEM micrograph of this system sintered at 1210 degrees C and 1400 degrees C showed an amorphous grain boundary region low in cobalt, indicating that the Co2SnO4 phase is precipitated from this region. (C) 1999 Elsevier B.V. Limited and Techna S.r.l. All rights reserved.

Planar waveguides based on nanocrystalline and Er3+ doped SnO2

Luminescent SnO2: x%mol Er3+ (x=0.1-2.0) thin films have been spin coated on borosilicate and silica substrates from water colloidal suspensions that could be prepared containing up to 40% in weight SnO2 nanocrystalline powders. High Resolution Transmission Electron Microscopy results show the well known SnO2 cassiterite structure and nanocrystallites around 10 nm in diameter, corroborating results from X-ray diffraction. Mono and multi layers have been prepared from the stable colloidal suspensions and films thickness was observed to increase linearly, up to 200 nm, with the colloidal suspensions nanoparticles amount. Excitation and emission spectra have been measured and Er3+ ions were found to be essentially incorporated into the cassiterite structure, substituting for Sn4+, for doping concentration lower than 0.05 mol%. Er3+ ions also appear segregated at the grains surface for higher doping concentration. The optical parameters (refractive index, thickness and propagating modes) of a waveguide sample were measured at 632.8 and 543.4 nm by the prism coupling technique. A monomodal waveguide was obtained with attenuation loss of 3.5 dB/cm along a 2.5 cm optical path.

A theoretical analysis of the TiO2/Sn doped (110) surface properties

We have used the periodic quantum-mechanical method with density functional theory at the B3LYP level in order to study TiO2/Sn doped (1 1 0) surfaces and have investigated the structural, electronic and energy band properties of these oxides. Our calculated relaxation directions for TiO2 is the experimental one and is also in agreement with other theoretical results. We also observe for the doped systems relaxation of lattice positions of the atoms. Modification of Sri, O and Ti charges depend on the planes and positions of the substituted atoms. Doping can modify the Fermi levels, energy gaps as well as the localization and composition of both valence and conduction band main components. Doping can also modify the chemical, electronic and optical properties of these oxides surfaces increasing their suitability for use as gas sensors and optoelectronic devices. (c) 2005 Elsevier B.V. All rights reserved.

High current-density anodic electro-dissolution in flow-injection systems for the determination of aluminium, copper and zinc in non-ferroalloys by flame atomic absorption spectrometry

An automatic Procedure with a high current-density anodic electrodissolution unit (HDAE) is proposed for the determination of aluminium, copper and zinc in non-ferroalloys by flame atonic absorption spectrometry, based on the direct solid analysis. It consists of solenoid valve-based commutation in a flow-injection system for on-line sample electro-dissolution and calibration with one multi-element standard, an electrolytic cell equipped with two electrodes (a silver needle acts as cathode, and sample as anode), and an intelligent unit. The latter is assembled in a PC-compatible microcomputer for instrument control, and far data acquisition and processing. General management of the process is achieved by use of software written in Pascal. Electrolyte compositions, flow rates, commutation times, applied current and electrolysis time mere investigated. A 0.5 mol l(-1) HNO3 solution was elected as electrolyte and 300 A/cm(2) as the continuous current pulse. The performance of the proposed system was evaluated by analysing aluminium in Al-allay samples, and copper/zinc in brass and bronze samples, respectively. The system handles about 50 samples per hour. Results are precise (R.S.D < 2%) and in agreement with those obtained by ICP-AES and spectrophotometry at a 95% confidence level.

Structure of magnetic poly(oxyethylene)-siloxane nanohybrids doped with Fe-II and Fe-III

Hybrid organic - inorganic nanocomposites doped with Fe-II and Fe-III ions and exhibiting interesting magnetic properties have been obtained by the sol - gel process. The hybrid matrix of these ormosils ( organically modified silicates), classed as di-ureasils and termed U( 2000), is composed of poly( oxyethylene) chains of variable length grafted to siloxane groups by means of urea crosslinkages. Iron perchlorate and iron nitrate were incorporated in the diureasil matrices, leading to compositions within the range 80 greater than or equal to n greater than or equal to 10, n being the molar ratio of ether-type O atoms per cation. The structure of the doped diureasils was investigated by small-angle X-ray scattering (SAXS). For Fe-II-doped samples, SAXS results suggest the existence of a two-level hierarchical structure. The primary level is composed of spatially correlated siloxane clusters embedded in the polymeric matrix and the secondary, coarser level consists of domains where the siloxane clusters are segregated. The structure of Fe-III-doped hybrids is different, revealing the existence of iron oxide based nanoclusters, identified as ferrihydrite by wide-angle X-ray diffraction, dispersed in the hybrid matrix. The magnetic susceptibility of these materials was determined by zero-field-cooling and field-cooling procedures as functions of both temperature and field. The different magnetic features between Fe-II- and Fe-III-doped samples are consistent with the structural differences revealed by SAXS. While Fe-II-doped composites exhibit a paramagnetic Curie-type behaviour, hybrids containing Fe-III ions show thermal and field irreversibilities.

Structural and microstructural behaviour of SnO2 dense ceramics doped with ZnO and WO3

SnO2-based varistors doped with ZnO and WO3 were prepared by mixed oxide method. Experimental evidence shows that the increase in ZnO amount increases the volume and microstrain of unit cell while the WO3 promotes a decrease. The effect of ZnO and WO3 additives could be explained by the substitution of Sn4+ by Zn2+ and W6+. The addition of WO3 inhibits the grain growth due to the segregation in the grain boundary without influence in the densification of the samples. Besides that, an increase in the electrical resistance of the SnO2-ZnO-WO3 system was observed independent of the WO3 concentration. (c) 2005 Elsevier B.V. All rights reserved.