用标志重捕法估算湖泊二龄河蟹种群数量

国家“九五”攻关课题96－008－02－03;中国科学院资源与环境局资助KZ951—A1—102

湖南省境内洞庭鳜(Tungtingichthys,鲈形目Perciformes)的重新观察

对秀丽洞庭鳜作了较详细的描述，在骨骼学特征和变异范围方面作了较多的补充。指出秀丽洞庭级和下湾铺洞庭鳜在背鳍前骨式、林的形状和尾鳍前短鳍条数目等特征存在差异。补充了洞庭鳜的属征，并认为始新世化石低等鲈形目鱼类中北半球的洞庭鳜、Amphiperca、Priscacara之间的关系比它们和南半球的Percichthys的关系更接近。

厚颌鲂种群遗传结构及哑基因问题

中国科学院分类区系特别支持费资助

光照、温度及宿主粘液对河鲈锚首吸虫虫卵孵化的影响

光照、温度及宿主粘液对河鲈锚首吸虫虫卵孵化的影响夏晓勤，聂品，姚卫建（中国科学院水生生物研究所，武汉４３００７２）关键词河鲈锚首吸虫，虫卵孵化，鳜鱼ＥＦＦＥＣＴＳＯＦＬＩＧＨＴ，ＴＥＭＰＥＲＡＴＵＲＥＡＮＤＨＯＳＴＭＵＣＵＳＯＮＴＨＥＥＧＧＨＡＴＣＨ...

湖北绿球藻目新植物

本文报道采自湖北省绿球藻目的5个新种,即粗角四棘藻、六锥四角藻、钝尖月形藻、湖北胸甲藻和三角空心藻。

六种选矿药剂对藻类的毒性比较

本文评价了六种选矿药剂对藻类的毒性效应,它们对斜生栅藻的毒性大小排列顺序是:二号油>Fu>0145>Yx>MPA>S-808,96h-EC_(50)值分别为41.2,50.1,82.0,177.8,198.2和900ppm。六种选矿药剂对藻类毒性最大的是二号油,毒性最小的是S-808。对藻类细胞形态的观察结果表明,0145对藻类的细胞形态有轻度的致畸效应,在其它五种药剂的培养物中,均未发现畸变细胞。在室温下存放10d后MPA,0145和二号油,毒性明显下降,其下降速率的顺序是:MPA>0145>二号油。藻

磷矿浮选剂的选矿尾水对铜锈环梭螺生殖的影响

本文用磷矿浮选剂S-808的选矿尾水对铜锈环梭螺(Bellamya aeruginosa)作慢性中毒试验,结果表明选矿尾水对母螺所生仔螺产生明显的影响。通过测量仔螺壳大小的变化,获得的数据应用方差分析,得到的差异非常显著。较好地评价了选矿尾水对软体动物的影响。

团头鲂血居吸虫病的病原及其防治的研究——包括一种新的描述

团头鲂血居吸虫病是1965年和1973年先后在湖北省浠水县鱼池发现。1.0—1.5寸大的鱼种往往因患此病而死亡。其病原体是文献中未报导过的两种血居吸虫,并一种命名为鲂血居吸虫新种Sanguinicola megalogramae sp.nov.另一种暂列为血居吸虫未定种Sanguincolasp。 较详细地观察和记述了鲂血居吸虫成虫的形态、生态,以及卵、毛蚴、尾蚴等的形态和发育情况。查清了鲂血居吸虫的中间宿主是一种扁卷螺——白旋螺 Gyraulus albus Muller,还进行了尾蚴对鱼苗的感染试验。

云南星云湖、杞麓湖大头鲤的生物学

本文是根据云南星云湖、杞麓湖中所产大头鲤进行一些生态习性的研究。大头鲤的年龄鉴定是依据鳞片上环片切割现象。依星云湖的标本实测平均体长,Ⅰ龄为135.12毫米,Ⅱ龄鱼为196.93毫米,Ⅲ龄鱼为241.92毫米,Ⅳ龄焦为288毫米。星云湖和杞麓湖大头鲤体长和体重的关系式分别为:W=0.00001283L~(3.0719),W=0.00002181L~(2.9895)。食性极为单纯,主要是以枝角类和桡足类为食。不同大小个体的食性差异不大。Ⅰ龄鱼部分达到性成熟,Ⅱ龄鱼全部性成熟。其中性成熟最小个体雌鱼体长为14

斑鳢和乌鳢寄生孢子虫的研究

<正> 关于寄生鳢属鱼类原生动物的研究,外国已有不少的文献,但在我国还没有关于这方面的资料。作者进行这一研究工作,目的是了解斑鳢(Ophiocephalus maculatus)和乌鳢(O.argus)两种淡水鱼的孢子虫种类的形态学,以及对寄主的关系,以供鱼病防治和有关寄生虫学方面工作者在理论和实践上的参考。本文记述的孢子虫共22种,其中已见于文献的6种,新种16种,并包括粘孢子虫一新属。其分类系统如下:

中国的鲌属和红鲌属鱼类的研究

<正> 一、绪言关于中国淡水鱼类的研究,如果从C.Linnaeus的记载算起,至今已超过一个半世纪了。在这个时期内,特别是前100年,全部工作几乎只限于种类的筒单描述。进行这些工作的鱼类学者,大抵都是外国人,他们绝大多数没有到过中国,一般仅凭从中国采得的少数标本,予以鉴定研究。个别早期作者,甚至往往只根据一幅鱼的绘图,就进行描述鉴定,创立新种。到二十世纪三十年代,才有我国学者从事本国鱼类的研究,开始比较系统的在全国一些主要河流进行鱼类调查。到四十年代止,可以说除边远地区外,我国的主要经济鱼类资源基本上都有

A new genus and species of freshwater monostiliferous hoplonemertean (Nemertea, Enopla) from the People's Republic of China

A new genus and species of freshwater monostiliferous hoplonemertean, Limnemertes poyangensis gen. et sp. nov., from Poyang Lake, People's Republic of China, is described and illustrated. The taxon is compared and contrasted with previously described freshwater hoplonemerteans. This is the fourth species of freshwater nemertean to be described from China and the first recorded from Poyang Lake.

Hole Spin Relaxation in an Ultrathin InAs Monolayer

We investigate the spin relaxation time of holes in an ultrathin neutral InAs monolayer (1.5 ML) and compare with that of electrons, using polarization-dependent time-resolved photoluminescence (TRPL) experiments. With excitation energies above the GaAs gap, we observe a rather slow relaxation of holes (tau(1h) = 196 +/- 17 ps) that is in the magnitude similar to electrons (tau(1e) = 354 +/- 32 ps) in this ultrathin sample. The results are in good agreement with earlier theoretical prediction, and the phonon scattering due to spin-orbit coupling is realized to play a dominant role in the carrier spin kinetics.

Passively Q-switched mode-locking of diode-pumped Nd : YVO4 laser with GaAs intracavity absorber grown at low temperature

Using a low temperature grown GaAs wafer as an intracavity saturable absorber, a temporal envelope duration of 11 ns of Q- switched and mode- locked ( QML) 1064 nm operation was achieved in a very simple compact plane- concave cavity Nd: YVO4 laser, it was so short that the pulses can be used as Q- switching pulses. The maximal average output power is 808 mW with the repetition rate of 25 kHz, and the corresponding peak power and energy of a single Q- switched pulse was 2.94 kW and 32.3 mu J, respectively. The mode- locked pulse trains inside the Q- switched pulse envelope had a repetition rate of 800 MHz.

Growth and characterization of 0.8-mu m gate length AlGaN/GaN HEMTs on sapphire substrates

AlGaN/GaN high electron mobility transistor (HEMT) structures were grown on 2 inch sapphire substrates by MOCVD, and 0.8-mu m gate length devices were fabricated and measured. It is shown by resistance mapping that the HEMT structures have an average sheet resistance of approximately 380 Omega/sq with a uniformity of more than 96%. The 1-mm gate width devices using the materials yielded a pulsed drain current of 784 mA/mm at V-gs=0.5 V and V-ds=7 V with an extrinsic transconductance of 200 mS/mm. A 20-GHz unity current gain cutoff frequency (f(T)) and a 28-GHz maximum oscillation frequency (f(max)) were obtained. The device with a 0.6-mm gate width yielded a total output power of 2.0 W/mm (power density of 3.33 W/mm) with 41% power added efficiency (PAE) at 4 GHz.