High-temperature mechanical properties of aluminium alloys reinforced with titanium diboride (TiB2) particles

The physical and mechanical properties of metal matrix composites were improved by the addition of reinforcements. The mechanical properties of particulate-reinforced metal-matrix composites based on aluminium alloys (6061 and 7015) at high temperatures were studied. Titanium diboride (TiB2) particles were used as the reinforcement. All the composites were produced by hot extrusion. The tensile properties and fracture characteristics of these materials were investigated at room temperature and at high temperatures to determine their ultimate strength and strain to failure. The fracture surface was analysed by scanning electron microscopy. TiB2 particles provide high stability of the aluminium alloys (6061 and 7015) in the fabrication process. An improvement in the mechanical behaviour was achieved by adding TiB2 particles as reinforcement in both the aluminium alloys. Adding TiB2 particles reduces the ductility of the aluminium alloys but does not change the microscopic mode of failure, and the fracture surface exhibits a ductile appearance with dimples formed by coalescence.

Mechanical properties of tungsten alloys with Y2O3 and titanium additions

In this research the mechanical behaviour of pure tungsten (W) and its alloys (2 wt.% Ti–0.47 wt.% Y2O3 and 4 wt.% Ti–0.5 wt.% Y2O3) is compared. These tungsten alloys, have been obtained by powder metallurgy. The yield strength, fracture toughness and elastic modulus have been studied in the temperature interval of 25 °C to 1000 °C. The results have shown that the addition of Ti substantially improves the bending strength and toughness of W, but it also dramatically increases the DBTT. On the other hand, the addition of 0.5% Y2O3, is enough to improve noticeably the oxidation behaviour at the higher temperatures. The grain size, fractography and microstructure are studied in these materials. Titanium is a good grain growth inhibitor and effective precursor of liquid phase in HIP. The simultaneous presence of Y2O3 and Ti permits to obtain materials with low pores presence

Experimental verification of intermediate band formation on titanium-implanted silicon

Intermediate band formation on silicon layers for solar cell applications was achieved by titanium implantation and laser annealing. A two-layer heterogeneous system, formed by the implanted layer and by the un-implanted substrate, was formed. In this work, we present for the first time electrical characterization results which show that recombination is suppressed when the Ti concentration is high enough to overcome the Mott limit, in agreement with the intermediate band theory. Clear differences have been observed between samples implanted with doses under or over the Mott limit. Samples implanted under the Mott limit have capacitance values much lower than the un-implanted ones as corresponds to a highly doped semiconductor Schottky junction. However, when the Mott limit is surpassed, the samples have much higher capacitance, revealing that the intermediate band is formed. The capacitance increasing is due to the big amount of charge trapped at the intermediate band, even at low temperatures. Ti deep levels have been measured by admittance spectroscopy. These deep levels are located at energies which vary from 0.20 to 0.28?eV below the conduction band for implantation doses in the range 1013-1014 at./cm2. For doses over the Mott limit, the implanted atoms become nonrecombinant. Capacitance voltage transient technique measurements prove that the fabricated devices consist of two-layers, in which the implanted layer and the substrate behave as an n+/n junction.

Electrical properties of silicon supersaturated with titanium or vanadium for intermediate band material

We have fabricated titanium and vanadium supersaturated silicon layers on top of a silicon substrate by means of ion implantation and pulsed laser melting processes. This procedure has proven to be suitable to fabricate an intermediate band (IB) material, i.e. a semiconductor material with a band of allowed states within the bandgap. Sheet resistance and Hall mobility measurements as a function of the temperature show an unusual behavior that has been well explained in the framework of the IB material theory, supposing that we are dealing with a junction formed by the IB material top layer and the n-Si substrate. Using an analytical model that fits with accuracy the experimental sheet resistance and mobility curves, we have obtained the values of the exponential factor for the thermically activated junction resistance of the bilayer, showing important differences as a function of the implanted element. These results could allow us to engineer the IB properties selecting the implanted element depending on the required properties for a specific application.

Mechanical Characterization of Tungsten-Titanium-Lanthana alloy: Influence of Temperature and Atmosphere

The target is to evaluate the mechanical behavior of Ti and La2O3 dispersed W alloy, processed by HIP and compare it with a reference pure-W. Tests were performed in both oxidant (air) and inert (vacuum) atmosphere in a temperature range from -196 to 1200 °C.

Influence of Temperature and Atmosphere in Tungsten-Titanium-Lanthana Alloys

The most promising materials to be used as Plasma Facing Components(PFC),in the International Thermonuclear Experimental Reactor (ITER), are tungsten alloys. However these materials have to withstand extreme operating conditions such as those that will be used inside the reactor.

Multiscale modeling of a small punch test on nanostructured CP titanium

Small punch (SP) test techniques are typically used to study the mechanical properties of materials or components from miniature size specimens. This kind of test was originally developed to assess ductility loss in steel caused by irradiation or thermal treatment, particularly when the amount of metal was limited, but it soon proved to be a powerful method to estimate several properties.

Towards a new generation of solar cells: silicon supersaturated with titanium or vanadium

We have analyzed the spectral sub-bandgap photoresponse of silicon (Si) samples implanted with vanadium (V) and titanium (Ti) at different doses and subsequently processed by pulsed-laser melting.

Curtin-Hammett versus non-Curtin-Hammett frameworks is optimizing the enantioselective binolam/titanium(IV)-catalyzed cyanobenzoylation of aldehydes: Part 2

Extensive experimental and computational studies have been carried out on the enantioselective titanium(IV)-catalyzed cyanobenzoylation of aldehydes using 1:n Binolam:Ti(OiPr)4 mixtures as precatalysts, with the purpose of identifying the key mechanistic aspects governing enantioselectivity. HCN and isopropyl benzoate were detected in the reacting mixtures. This, as well as the reaction’s response to the presence of an exogenous base, and the failure to react in the presence of Binol:Ti(OiPr)4 mixtures, led us to propose not a direct cyanobenzoylation but an indirect process involving enantioselective hydrocyanation followed by O-benzoylation. Computational work provided positive evidence for the intervention of both indirect and direct cyanobenzoylation routes, the former being faster. However, the standard Curtin–Hammett-based optimization search ended with unsatisfactory results. Experimental and computational DFT studies (B3LYP/6-31G*) led us to conclude that: (1) the overall cyanobenzoylation of aldehydes catalyzed by 1:n Binolam:Ti(OiPr)4 mixtures involves an enantioselective hydrocyanation followed by an stereochemically inert O-benzoylation; (2) the initial complexes prevailing in a 1:1 Binolam:Ti(OiPr)4 mixture are the solvated mononuclear monomer 5·2(iPrOH) and solvated dinuclear dimer 9·2(iPrOH), whereas 9·2(iPrOH) is the major component in a 1:2 or higher 1:n mixture; (3) since the slowest step is that of benzoylation of ligated iPrOH which yields the actual catalysts 5–9, the catalytic system fits into a non-Curtin–Hammett framework, the final products deriving from a kinetic quench of the competing routes; and (4) accordingly, catalysis by 1:1 Binolam:Ti(OiPr)4 mixtures should involve cyanobenzoylations promoted by mononuclear 5, contaminated with those promoted by some dinuclear open dimer 9, whereas cyanobenzoylations catalyzed by a 1:2 and higher 1:n mixtures should be the result of catalysis promoted by the large amounts of dinuclear open dimer 9.

Characterization and electrochemical properties of conducting nanocomposites synthesized from p-anisidine and aniline with titanium carbide by chemical oxidative method

A novel polymer/TiC nanocomposites “PPA/TiC, poly(PA-co-ANI)/TiC and PANI/TiC” was successfully synthesized by chemical oxidation polymerization at room temperature using p-anisidine and/or aniline monomers and titanium carbide (TiC) in the presence of hydrochloric acid as a dopant with ammonium persulfate as oxidant. These nanocomposites obtained were characterized by Fourier transform infrared (FTIR) spectroscopy, X-ray diffraction (XRD), transmission electron microscopy (TEM), energy dispersive spectroscopy (EDS), and thermogravimetric analysis (TGA). XRD indicated the presence of interactions between polymers and TiC nanoparticle and the TGA revealed that the TiC nanoparticles improve the thermal stability of the polymers. The electrical conductivity of nanocomposites is in the range of 0.079–0.91 S cm−1. The electrochemical behavior of the polymers extracted from the nanocomposites has been analyzed by cyclic voltammetry. Good electrochemical response has been observed for polymer films; the observed redox processes indicate that the polymerisation on TiC nanoparticles produces electroactive polymers. These nanocomposite microspheres can potentially used in commercial applications as fillers for antistatic and anticorrosion coatings.