First direct observation of sputtered lunar oxygen

We present the first direct measurement of neutral oxygen in the lunar exosphere, detected by the Chandrayaan-1 Energetic Neutral Analyzer (CENA). With the lunar surface consisting of about 60% of oxygen in number, the neutral oxygen detected in CENA's energy range (11 eV−3.3 keV) is attributed to have originated from the lunar surface, where it was released through solar wind ion sputtering. Fitting of CENA's mass spectra with calibration spectra from ground and in-flight data resulted in the detection of a robust oxygen signal, with a flux of 0.2 to 0.4 times the flux of backscattered hydrogen, depending on the solar wind helium content and particle velocity. For the two solar wind types observed, we derive subsolar surface oxygen atom densities of N0= (1.1 ± 0.3) · 107m−3 and (1.4 ± 0.4) · 107m−3, respectively, which agree well with earlier model predictions and measured upper limits. From these surface densities, we derive column densities of NC= (1.5 ± 0.5) · 1013 m−2and (1.6 ± 0.5) · 1013 m−2. In addition, we identified for the first time a helium component. This helium is attributed to backscattering of solar wind helium (alpha particles) from the lunar surface as neutral energetic helium atoms, which has also been observed for the first time. This identification is supported by the characteristic energy of the measured helium atoms, which is roughly 4 times the energy of reflected solar wind hydrogen, and the correlation with solar wind helium content.

Electrical resistivity change in amorphous Ta42Si13N45 films by stress relaxation

In a first experiment, a reactively sputtered amorphous Ta₄₂Si₁₃N₄₅ film about 260 nm thick deposited on a flat and smooth alumina substrate was thermally annealed in air for 30 min and let cooled again repeatedly at successively higher temperatures from 200 to 500 °C. This treatment successively and irreversibly increases the room temperature resistivity of the film monotonically from its initial value of 670 μΩ cm to a maximum of 705 μΩ cm (+5.2 %). Subsequent heat treatments at temperatures below 500 °C and up to 6 h have no further effect on the room temperature resistivity. The new value remains unchanged after 3.8 years of storage at room temperature. In a second experiment, the evolution of the initially compressive stress of a film similarly deposited by reactive sputtering on a 2-inch silicon wafer was measured by tracking the wafer curvature during similar thermal annealing cycles. A similar pattern of irreversible and reversible changes of stress was observed as for the film resistivity. Transmission electron micrographs and secondary ion mass profiles of the film taken before and after thermal annealing in air establish that both the structure and the composition of the film scarcely change during the annealing cycles. We reason that the film stress is implicated in the resistivity change. In particular, to interpret the observations, a model is proposed where the interface between the film and the substrate is mechanically unyielding.

Can IBEX detect interstellar neutral helium or oxygen from anti-ram directions?

To better constrain the parameters of the interstellar neutral flow, we searched the Interstellar Boundary EXplorer (IBEX)-Lo database for helium and oxygen from the interstellar medium in the anti-ram direction in the three years (2009-2011) with the lowest background rates. We found that IBEX-Lo cannot observe interstellar helium from the anti-ram direction because the helium energy is too low for indirect detection by sputtering off the IBEX-Lo conversion surface. Our results show that this sputtering process has a low energy threshold between 25 and 30 eV, whereas the energy of the incident helium is only 10 eV for these observations. Interstellar oxygen, on the other hand, could in principle be detected in the anti-ram hemisphere, but the expected magnitude of the signal is close to the detection limit imposed by counting statistics and by the magnetospheric foreground.

Monte-Carlo simulation of Callisto's exosphere

We model Callisto's exosphere based on its ice as well as non-ice surface via the use of a Monte-Carlo exosphere model. For the ice component we implement two putative compositions that have been computed from two possible extreme formation scenarios of the satellite. One composition represents the oxidizing state and is based on the assumption that the building blocks of Callisto were formed in the protosolar nebula and the other represents the reducing state of the gas, based on the assumption that the satellite accreted from solids condensed in the jovian sub-nebula. For the non-ice component we implemented the compositions of typical CI as well as L type chondrites. Both chondrite types have been suggested to represent Callisto's non-ice composition best. As release processes we consider surface sublimation, ion sputtering and photon-stimulated desorption. Particles are followed on their individual trajectories until they either escape Callisto's gravitational attraction, return to the surface, are ionized, or are fragmented. Our density profiles show that whereas the sublimated species dominate close to the surface on the sun-lit side, their density profiles (with the exception of H and H-2) decrease much more rapidly than the sputtered particles. The Neutral gas and Ion Mass (NIM) spectrometer, which is part of the Particle Environment Package (PEP), will investigate Callisto's exosphere during the JUICE mission. Our simulations show that NIM will be able to detect sublimated and sputtered particles from both the ice and non-ice surface. NIM's measured chemical composition will allow us to distinguish between different formation scenarios. (C) 2015 Elsevier Inc. All rights reserved.

Sputter optimization of AlN on diamond substrates for high frequency SAW resonators

The AlN/diamond structure is an attractive combination for SAW devices and its application at high frequencies. In this work, the synthesis of AlN thin films by reactive sputtering has been optimized on diamond substrates in order to process high frequency devices. Polished microcrystalline and as-grown nanocrystalline diamond substrates have been used to deposit AlN of different thickness under equal sputtering conditions. For the smoother substrates, the FWHM of the rocking curve of the (002) AlN peak varies from 3.8° to 2.7° with increasing power. SAW one port resonators have been fabricated on these films, whose electrical characterization (in terms of S11 parameters) is reported.

'Enhancement of the crystallization process of TbxFe1-x thin films upon the formation of alpha-Tb phase'

TbxFe1−x thin films deposited by sputtering on Mo were investigated structurally and magnetically. The microstructure consists of TbFe2 nanoparticles embedded in an amorphous matrix, and the Tb content can be correlated with an increase in the volume of these nanoparticles. Similar microstructure and behavior were found when TbFe2 was deposited on glass and on a Pt buffer layer. Nevertheless, thermal treatments promote a different effect, depending on the mechanical stiffness of the buffer layer. The layers deposited on Mo, a rigid material, show crystalline TbFe2 together with α-Tb phase upon thermal treatment. In contrast, TbFe2 does not crystallize properly on Pt, a material with a lower stiffness than Mo. Intermediate results were observed on the film deposited on glass. Experimental results show the impact of the buffer stiffness on the crystallization process. Moreover, the formation of α-Tb appears to be fundamental to crystallized TbFe2 on layers deposited on rigid buffers

Investigation on the structural and magnetic properties of sputtered TbFe2/Fe3Ga heterostructures

We have analyzed the structural and magnetic properties of as-grown and annealed [TbFe2/Fe3Ga]n heterostructures grown by sputtering. Evidence of the bcc structure in the Fe3Ga layers has been found. The diffraction peak related to this structure shifts to high angles with the annealing temperature. Also, we have observed a change in the microstructure of the Tb-Fe layers when the thickness layer is reduced in the as-grown heterostructures. Moreover, the Tb content is lower than 33% of the TbFe2 Laves phase and it depends on the layer thickness. The thermal treatments promote the increase of the Tb content, but only in the heterostructures with thick layers. The strong lattice mismatch between the Tb-Fe and Fe-Ga layers seems to prevent a complete Tb diffusion upon the annealing process. Thus, the crystallization of the TbFe2 Laves phase is inhibited in the heterostructures with thin layers, although our experimental results indicate the presence of potential magnetostrictive TbFeGa alloys

Optimización de las condiciones de electrodeposición para la obtención de núcleos sensores

Mostraremos los resultados obtenidos en la búsqueda de las condiciones de crecimiento óptimas para que las propiedades magnéticas de aleaciones de CoP sean las adecuadas para utilizarlas como núcleos de sensores. Demostraremos que utilizando una densidad de corriente adecuada en el proceso de electrodeposición, es posible obtener aleaciones formadas por capas ferromagnéticas de distinta composición que presentan anisotropía en el plano y un campo coercitivo comparable al de las aleaciones producidas por enfriamiento ultrarrápido. Como ánodos empleamos láminas de cobalto de 1 mm de espesor y una pureza del 99.95%. Como sustratos utilizamos tanto láminas de Cu como sustratos fabricados por sputtering. Durante la electrodeposición se ha utilizado la agitación del electrolito y la vibración del cátodo para facilitar el desprendimiento de las burbujas de H2 que se generan durante el proceso. De esta forma se han obtenido las monocapas controlando los dos parámetros siguientes: la densidad de corriente y el tiempo de aplicación de la misma. Por otro lado, para las multicapas se han aplicado pulsos de corriente donde se han tenido que controlar la duración de los pulsos y la intensidad de los mismos.

Fabrication process of Mo/Au TES at RT

We report on the fabrication details of TES based on Mo/Au bilayers. The Mo layer is deposited by radio frequency (RF) sputtering and capped with a sputter deposited thin Au protection layer. Afterwards, a second Au layer of suitable (lower) resistivity is deposited ex‐situ by e‐beam evaporation, until completion of the total desired Au thickness. The deposition was performed at room temperature (RT) on LPCVD Si3 N4 membranes. Such a deposition procedure is very reproducible and allow controlling the critical temperature (Tc) and normal electrical resistance (RN ) of the Mo/Au bilayer. The process is optimized to achieve low stress bilayers, thus avoiding the undesirable curvature of the membranes. Bilayers are patterned using photolithographic techniques and wet etching procedures. Mo superconducting paths are used to contact the Mo/Au bilayers, thus ensuring good electrical conductivity and thermal isolation. The entire fabrication process let to stable and reproducible sensors with required and tunable functional properties

Ion Beam irradiation of copper nitride: electronic vs elastic-collision mechanism

Copper nitride is a metastable material which results very attractive because of their potential to be used in functional device. Cu3 N easily decomposes into Cu and N2 by annealing [1] or irradiation (electron, ions, laser) [2, 3]. Previous studies carried out in N-rich Cu3 N films irradiated with Cu at 42MeV evidence a very efficient sputtering of N whose yield (5×10 3 atom/ion), for a film with a thickness of just 100 nm, suggest that the origin of the sputtering has an electronic nature. This N depletion was observed to be responsible for new phase formation ( Cu2 O) and pure Cu [4]

Characterization of Amorphous Tantalum Oxide for Insulating Acoustic Mirrors

This work describes the assessment of the acoustic properties of sputtered tantalum oxide films intended as high impedance films for the acoustic isolation of bulk acoustic wave devices operating in the GHz frequency range. The films are grown by sputtering a metallic tantalum target under different oxygen and argon gas mixtures, total pressures, pulsed DC powers and substrate bias. The structural properties of the films are assessed through infrared absorption spectroscopy and X-ray diffraction measurements. Their acoustic impedance is obtained after estimating the mass density by X-ray reflectometry measurements and the longitudinal acoustic velocity by analyzing the longitudinal λ/2 resonance induced in a tantalum oxide film inserted between an acoustic reflector and an AlN-based resonator. A second measurement of the sound velocity is achieved through picosecond acoustic spectroscopy.

Ta2O5/SiO2 insulating acoustic mirrors for AlN-based X-band BAW resonators

This work describes the performance of AlN-based bulk acoustic wave resonators built on top of insulating acoustic reflectors and operating at around 8 GHz. The acoustic reflectors are composed of alternate layers of amorphous Ta2O5and SiO2 deposited at room temperature by pulsed-DC reactive sputtering in Ar/O2 atmospheres. SiO2 layers have a porous structure that provides a low acoustic impedance of only 9.5 MRayl. Ta2O5 films exhibit an acoustic impedance of around 39.5 MRayl that was assessed by the picoseconds acoustic technique These values allow to design acoustic mirrors with transmission coefficients in the centre of the band lower than -40 dB (99.998 % of reflectance) with only seven layers. The resonators were fabricated by depositing a very thin AlN film onto an iridium bottom electrode 180 nm-thick and by using Ir or Mo layers as top electrode. Resonators with effective electromechanical coupling factors of 5.7% and quality factors at the antiresonant frequency around 600 are achieved.

Growth of AlN oriented films on insulating substrates.

This work describes the structural and piezoelectric assessment of aluminum nitride (AlN) thin films deposited by pulsed-DC reactive sputtering on insulating substrates. We investigate the effect of different insulating seed layers on AlN properties (crystallinity, residual stress and piezoelectric activity). The seed layers investigated, silicon nitride (Si3N4), silicon dioxide (SiO2), amorphous tantalum oxide (Ta2O5), and amorphous or nano-crystalline titanium oxide (TiO2) are deposited on glass plates to a thickness lower than 100 nm. Before AlN films deposition, their surface is pre-treated with a soft ionic cleaning, either with argon or nitrogen ions. Only AlN films grown of TiO2 seed layers exhibit a significant piezoelectric activity to be used in acoustic device applications. Pure c-axis oriented films, with FWHM of rocking curve of 6º, stress below 500 MPa, and electromechanical coupling factors measured in SAW devices of 1.25% are obtained. The best AlN films are achieved on amorphous TiO2 seed layers deposited at high target power and low sputtering pressure. On the other hand, AlN films deposited on Si3N4, SiO2 and TaOx exhibit a mixed orientation, high stress and very low piezoelectric activity, which invalidate their use in acoustic devices.

Magnetic properties of nanostructured systems based on TbFe2

The aim of this work is to study the magnetic properties of annealed [Fe3Ga/TbFe2]n heterostructures grown by sputtering at room temperature. The interest of investigating multilayers comprised of TbFe2 and Fe3Ga is their complementary properties in terms of coercivity and magnetostriction. We have studied the thickness combination which optimizes the magnetic and magnetostrictive properties of the annealed multilayers. The crystallization of the Laves phase upon the thermal treatment in heterostructures with thick TbFe2 layers promotes the increase of the coercivity. This crystallization seems to be prevented by the low mechanical stiffness of the Fe3Ga. [Fe3Ga/TbFe2]n heterostructures show promising characteristics, λ of 340 ppm and a HC of 220 Oe, for the development of new magnetostrictive devices.

High-Acoustic-Impedance Tantalum Oxide Layers for Insulating Acoustic Reflectors

This work describes the assessment of the acoustic properties of sputtered tantalum oxide films intended for use as high-impedance films of acoustic reflectors for solidly mounted resonators operating in the gigahertz frequency range. The films are grown by sputtering a metallic tantalum target under different oxygen and argon gas mixtures, total pressures, pulsed dc powers, and substrate biases. The structural properties of the films are assessed through infrared absorption spectroscopy and X-ray diffraction measurements. Their acoustic impedance is assessed by deriving the mass density from X-ray reflectometry measurements and the acoustic velocity from picosecond acoustic spectroscopy and the analysis of the frequency response of the test resonators.