Structural properties of polycrystalline silicon films formed by pulsed rapid thermal processing

A novel pulsed rapid thermal processing (PRTP) method has been used for realizing solid-phese crystallization of amorphous silicon films prepared by plasma-enhanced chemical vapour deposit ion. The microstructure and surface morphology of the crystallized films were investigated using x-ray diffraction and atomic Force microscopy. The results indicate that PRTP is a suitable post-crystallization technique for fabricating large-area polycrystalline silicon films with good structural quality, such as large grain size, small lattice microstrain and smooth surface morphology on low-cost glass substrates.

Tuning of conduction intersublevel absorption wavelengths in (In, Ga)As/GaAs quantum-dot nanostructures

We demonstrate that by increasing the amount of (In, Ga)As deposit in a quantum dot layer, the intersublevel absorption wavelength for (In, Ga)As/GaAs quantum-dot infrared photodetectors can be blue-shifted from 15 to 10 mu m while the photoluminescence peak is red-shifted. We directly compare the measured energy spacing between intersublevels obtained from infrared absorption spectroscopy with those obtained from photoluminescence spectroscopy. We find that the intersublevel energy spacing determined from absorption measurements is much larger than that obtained from the photoluminescence measurements. (C) 2000 American Institute of Physics. [S0003-6951(00)04524-1].

Improvement of Ge self-organized quantum dots by use of Sb surfactant

A Sb-mediated growth technique is developed to deposit Ge quantum dots (QDs) of small size, high density, and foe of dislocations. These QDs were grown at low growth temperature by molecular beam epitaxy. The photoluminescence and absorption properties of these Ge QDs suggest an indirect-to-direct conversion, which is in good agreement with a theoretical calculation. (C) 1998 American Institute of Physics. [S0003-6951(98)00420-3].

Study on pulsed laser ablation and deposition of ZnO thin films by L-MBE

ZnO, as a wide-band gap semiconductor, has recently become a new research focus in the field of ultraviolet optoelectronic semiconductors. Laser molecular beam epitaxy (L-MBE) is quite useful for the unit cell layer-by-layer epitaxial growth of zinc oxide thin films from the sintered ceramic target. The ZnO ceramic target with high purity was ablated by KrF laser pulses in an ultra high vacuum to deposit ZnO thin film during the process of L-MBE. It is found that the deposition rate of ZnO thin film by L-MBE is much lower than that by conventional pulsed laser deposition (PLD). Based on the experimental phenomena in the ZnO thin film growth process and the thermal-controlling mechanism of the nanosecond (ns) pulsed laser ablation of ZnO ceramic target, the suggested effective ablating time during the pulse duration can explain the very low deposition rate of the ZnO film by L-MBE. The unique dynamic mechanism for growing ZnO thin film is analyzed. Both the high energy of the deposition species and the low growth rate of the film are really beneficial for the L-MBE growth of the ZnO thin film with high crystallinity at low temperature.

The fabrication of GaN-based nanopillar light-emitting diodes

InGaN/GaN multiple quantum well-based light-emitting diode (LED) nanopillar arrays were fabricated using Ni self-assembled nanodots as etching mask. The Ni nanodots were fabricated with a density of 6 x 10(8)-1.5 x 10(9) cm(-2) and a dimension of 100-250 nm with varying Ni thickness and annealing duration time. Then LED nanopillar arrays with diameter of approximately 250 nm and height of 700 nm were fabricated by inductively coupled plasma etching. In comparison to the as-grown LED sample an enhancement by a factor of four of photoluminescence (PL) intensity is achieved for the nanopillars and a blueshift as well as a decrease in full width at half maximum of the PL peak are also observed. The method of additional chemical etching was used to remove the etching-induced damage. Then nano-LED devices were further completed using a planarization approach to deposit p-type electrode on the tips of nanopillars. The current-voltage curves of both nanopillars and planar LED devices are measured for comparison.

A DUAL ION-BEAM EPITAXY SYSTEM

The design and characteristics of a dual ion beam epitaxy system (DIBE) are discussed. This system is composed of two beam lines, each providing a mass-separated ion beam converging finally with the other into the target chamber. The ions are decelerated and deposited on a substrate which can be heated to a temperature of 800-degrees-C. Currents of a few hundred microamperes are available for both beams and the deposit energies are in the range from tens to 1000 eV. The pressure of the target chamber during processing is about 7 x 10(-6) Pa. Preliminary experiments have proved that compound semiconductor materials such as GaN can be synthesized using the DIBE system.

PHOTOLUMINESCENCE AND SURFACE PHOTOVOLTAIC SPECTRA OF STRAINED INP ON GAAS

A high energy shift of the band-band recombination has been observed in the photoluminescence (PL) spectra of the strained InP epilayer on GaAs by metalorganic chemical vapor deposit. The strain determined by PL peak is in good agreement with calculated thermal strain. The surface photovoltalic spectra gives the information about energy gap, lattice mismatching, and composition of heteroepilayers, diffusion length, surface, and interface recombination velocity of minority carriers of heteroepitaxy layers.

Growth of SiGe by D-UHV/CVD at Low Temperature

The temperature is a key factor for the quality of the SiGe alloy grown by D-UHV/CVD. In conventional conditions,the lowest temperature for SiGe growth is about 550℃. Generally, the pressure of the growth chamber is about 10~(-5) Pa when liquid nitrogen is introduced into the wall of the growth chamber with the flux of 6sccm of the disilane gas. We have succeeded in depositing SiGe films at much lower temperature using a novel method. It is about 10.2 Pa without liquid nitrogen, about 3 magnitudes higher than the traditional method,leading to much faster deposition rate. Without liquid nitrogen,the SiGe film and SiGe/Si superlattice are grown at 485℃. The DCXRD curves and TEM image show that the quality of the film is good. The experiments show that this method is efficient to deposit SiGe at low temperature.

High-mobility Ga-polarity GaN achieved by NH3-MBE

GaN epilayers were grown on (0001) sapphire substrates by NH3-MBE and RF-MBE (radio frequency plasma). The polarities of the epilayers were investigated by in-situ RHEED, chemical solution etching and AFM surface examination. By using a RF-MBE grown GaN layer as template to deposit GaN epilayer by NH3-MBE method, we found that not only Ga-polarity GaN films were repeatedly obtained, but also the electron mobility of these Ga-polarity films was significantly improved with a best value of 290 cm(2)/V.s at room temperature. Experimental results show it is an easy and stable way for growth of high quality Ga-polarity GaN films.

半干旱风沙区植物功能特性与植物功能型研究

半干旱风沙区是我国北方土地沙漠化严重的生态脆弱地区，建设和保护本区植被是生态建设和环境保护的当务之急。为了深入了解半干旱风沙区的植被的组成和演替动态，为当地的植被管理提供建议，本文以科尔沁沙地乌兰敖都地区为例，比较系统地探讨了本区植被的数量特征、筛选出90种具有代表性的植物种类，研究了各物种的62种功能特性、并对代表种进行植物功能型划分，从植物功能特性和功能型的角度分析了半干旱风沙区植被的分布动态和管理。 研究结果表明：（1）90种代表植物的38种营养阶段特性和24种繁殖阶段特性之间呈现显著相关（P＜0.05）的特性对的比例要低于营养阶段和繁殖阶段内部，与营养特性显著相关（P＜0.05）的特性对占总显著相关特性对的83.9%，营养特性是植物生长过程中非常重要的特性；（2）应用62种功能特性将90种代表植物划分为6类植物功能型，植物体内氮和钾含量、营养扩散、种子萌发率、叶面积和叶体积等是本区植物重要的功能特性，6类植物功能型分别以豆科植物、菊科植物、多年生C3草本植物、单子叶草本植物、叶片较小的植物和叶片较大植物为主的类群；（3）生长在各种沙丘上的群落类型的功能多样性低于生长在草甸草原和丘间低地植物群落中的功能多样性；（4）土壤有机质、全氮、全磷、地下水位和速效钾是影响植物种类、群落、植物功能特性和功能型分布的重要因素。

植物适应风沙活动的营养繁殖对策

风沙活动尤其是风蚀和沙埋是沙丘生态系统植物生存和繁衍的主要限制性因子。沙生植物进化了很多适应风沙活动的繁殖方式，但是，迄今为止，沙生植物如何从营养繁殖方面适应风沙活动尤其是如何适应风蚀并不为人们所熟知。作者研究了科尔沁沙地几种典型克隆植物营养繁殖对风沙活动的适应，并重点探讨了它们对风蚀的适应机制。 通过设计模拟试验比较了4种蒿属植物（生长在流动沙丘的乌丹蒿（Artemisia wudanica）、半固定沙丘的差巴嘎蒿（A. halodendron）、固定沙丘的冷蒿（A. frigida）和丘间低地的万年蒿（A. gmelinii））幼苗对沙埋的响应，发现在遭受沙埋时生长在强烈沙埋生境中的植物产生不定根，而生长在轻微沙埋或无沙埋生境中的植物产生不定芽；通过设计模拟试验研究了乌丹蒿和差巴嘎蒿植株在无风蚀和沙埋、风蚀、沙埋、风蚀—沙埋处理下植物的生长状况，发现风蚀—沙埋（风蚀至倒伏后再沙埋）处理产生的总生物量、植株相对高生长速率和不定根生物量均最大；通过设计控制试验、野外监测和调查研究了芦苇对流动沙丘和丘间低地之间的过渡带的侵入过程，发现根茎埋深调节地下根茎水平延伸和地上无性系分株形成这两个过程之间的权衡关系：当根茎埋深 ＝ 0cm，根茎水平延伸微弱，大量无性系分株形成；当根茎埋深 ≤ 45cm时，根茎水平延伸速度与无性系分株数量增加速度之间按对数函数关系负相关；当根茎埋深 ＞ 45cm时，根茎水平延伸较快，难见无性系分株。 本研究表明：（1）植物倾向于借助不定根而不是不定芽来适应沙埋；（2）风蚀 → 植株倒伏 → 沙埋 → 产生大量不定根这一反馈+营养繁殖过程是植物适应风蚀的一种机制；（3）风蚀调节地下根茎的埋深，而根茎的埋深调节根茎水平延伸和无性系分株形成这两个过程之间的关系，进而权衡地下侵入和地上生长的过程。植物通过营养繁殖适应风蚀的机制因生境而异，通过反馈+营养繁殖适应沙丘体上的风蚀，通过风蚀调节根茎埋深适应过渡带的风蚀；植物能通过不同营养繁殖方式适应风蚀，压条型克隆植物在沙埋时从枝条上产生不定根，根状茎型克隆植物在风蚀时促动地下芽库转换为地上无性系分株。 本研究丰富了植物沙生适应性理论，增进了对克隆植物适应策略的理解，对沙丘植被恢复和植物多样性保护具有指导意义。

沉积物中导热体周围水合物分解范围研究

沉积物水合物在热源周围的分解范围是水合物热开采以及相关灾害分析的重要基础数据.该文针对平面内边界有恒温热源的水合物热分解范围问题进行了理论分析和四氢呋喃水合物沉积物模型实验,并将两者结果进行了对比.结果表明:沉积物水合物最大分解范围主要取决于热源与环境温度的温差;热源周围水合物热分解最大范围的理论值与实验值接近,误差小于5%

液化土层中桶形基础承载力弱化的数值模拟

对动冰载作用下饱和砂土层液化过程中桶形基础承载力的弱化规律进行了数值模拟。建立液化土层的简化计算模型,采用FLAC3D软件分析了等效动冰载作用下土层不同位置的液化度及其主要影响因素;进而将具一定液化度土层的抗力作用等效为沿桶壁的不同刚度的非线性弹簧作用,在给定的位移破坏标准下确定不同液化度土层中桶形基础的承载力,分析液化土层中桶形基础承载力的弱化特征。在文中荷载条件和计算模型下,当土层顶面液化度为0.60、底面液化度为0.06时,土层中桶形基础的承载力降低12%。

粉土地层中桶形基础水平动载响应的离心机实验研究

对动载作用下分层土中单桶基础动承载特性、四桶基础动承载特性进行了离心机实验模拟,并对动载后桶基静承载力进行了模拟。结果表明:桶顶与粘土面相同时,有上覆粘土层条件下的桶基动力响应较无上覆粘土层条件下的孔压增长小,但沉陷大;桶顶与粘土层下的砂土面相同时比与粘土面相同时的响应大。桶基在动载后的静承载力得到提高。由于液化区的滤波和对动载的衰减作用,发生沉降的范围有限,离桶壁约一倍桶高距离。超孔隙水压从桶基边沿水平向逐渐衰减,从土面开始往下逐渐衰减到零。桶基周围砂土完全液化的厚度随载荷幅值的增加而增加,最大值约为桶高的40%。

The level and distribution of chromosomal aberration of tomato seeds at different penetration depths of carbon ions

The relationship between the penetration depth and the level and distribution of chromosomal aberration of the root tip cells were investigated by exposure of the superposed tomato seeds to 80 MeV/u carbon ions. The results showed that on the entrance of the beam the chromosomal aberration level was low. Damage such as breaks and gaps were dominant. At the Bragg peak, the chromosomal aberration level was high. The yields of dicentrics, rings and disintegrated small chromosomes increased but the yields of breaks and gaps decreased. These results are consistent with the distribution of the physical depth dose pro. le of carbon ions. It is effective to deposit the Bragg peak on the seeds to induce hereditary aberration in the mutation breeding with heavy ions.