JFET SOS devices: Processing and gamma radiation effects

A process for fabricating n channel JFET/SOS (junction field-effect transistors on silicon-on-sapphire) has been researched. The gate p(+)n junction was obtained by diffusion, and the conductive channel was gotten by a double ion implantation. Both enhancement and depletion mode transistors were fabricated in different processing conditions. From the results of the Co-50 gamma ray irradiation experimental we found that the devices had a good total dose radiation-hardness. When the tot;ll dose was 5Mrad(Si), their threshold voltages shift was less than 0.1V. The variation of transconductance and the channel leakage current were also little.

Improved neutron radiation hardness for Si detectors: Application of low resistivity starting material and or manipulation of N-eff by selective filling of radiation-induced traps at low temperatures

Radiation-induced electrical changes in both space charge region (SCR) of Si detectors and bulk material (BM) have been studied for samples of diodes and resistors made on Si materials with different initial resistivities. The space charge sign inversion fluence (Phi(inv)) has been found to increase linearly with the initial doping concentration (the reciprocal of the resistivity), which gives improved radiation hardness to Si detectors fabricated from low resistivity material. The resistivity of the BM, on the other hand, has been observed to increase with the neutron fluence and approach a saturation value in the order of hundreds k Omega cm at high fluences, independent of the initial resistivity and material type. However, the fluence (Phi(s)), at which the resistivity saturation starts, increases with the initial doping concentrations and the value of Phi(s) is in the same order of that of Phi(inv) for all resistivity samples. Improved radiation hardness can also be achieved by the manipulation of the space charge concentration (N-eff) in SCR, by selective filling and/or freezing at cryogenic temperatures the charge state of radiation-induced traps, to values that will give a much smaller full depletion voltage. Models have been proposed to explain the experimental data.

Influence of nitrogen implantation into the buried oxide on the radiation hardness of silicon-on-insulator wafers

摘要: In order to improve the total-dose radiation hardness of the buried oxide of separation by implanted oxygen silicon-on-insulator wafers, nitrogen ions were implanted into the buried oxide with a dose of 10(16)cm(-2), and subsequent annealing was performed at 1100 degrees C. The effect of annealing time on the radiation hardness of the nitrogen implanted wafers has been studied by the high frequency capacitance-voltage technique. The results suggest that the improvement of the radiation hardness of the wafers can be achieved through a shorter time annealing after nitrogen implantation. The nitrogen-implanted sample with the shortest annealing time 0.5 h shows the highest tolerance to total-dose radiation. In particular, for the 1.0 and 1.5 h annealing samples, both total dose responses were unusual. After 300-krad(Si) irradiation, both the shifts of capacitance-voltage curve reached a maximum, respectively, and then decreased with increasing total dose. In addition, the wafers were analysed by the Fourier transform infrared spectroscopy technique, and some useful results have been obtained.

potential mechanisms involved in resistant phenotype of MCF-7breast carcinoma cells to ionizing radiation induced apoptosis

In the present study, we investigated the mechanisms of apoptosis resistance and the roles of the phosphorylation of BRCA1, p21, the Bax/Bcl-2 protein ratio and cell cycle arrest in IR-induced apoptosis in MCF-7 cells. X-irradiation, in particular at low dose (1 Gy), but not carbon ion irradiation, had a significant antiproliferative effect on the growth of MCF-7 cells. 1 Gy X-irradiation resulted in G1 and G2 phase arrest, but 4 Gy induced a significant G1 block. In contrast, carbon ion irradiation resulted in a significant accumulation in the G2 phase. Concomitant with the phosphorylation of H2AX induced by DNA damage,carbon ion irradiation resulted in an approximately 1.9–2.8-fold increase in the phosphorylation of BRCA1 on serine residue 1524, significantly greater than that detected for X-irradiation. Carbon ion irradiation caused a dramatic increase in p21 expression and drastic decrease in Bax expression compared with X-irradiation. The data implicated that phosphorylation of BRCA1 on serine residue 1524 might,at least partially, induce p21 expression but repress Bax expression. Together, our results suggested that the phosphorylation of BRCA1 at Ser-1524 might contribute to the G2 phase arrest and might be an upstream signal involved in preventing apoptosis signal via upregulation of p21 and downregulation of the Bax/Bcl-2 ratio.

High-efficiency transfer and expression of AdCMV-p53 in human cervix adenocarcinoma cells induced by subclinical-dose carbon beam radiation

Purpose The aim of this study is to evaluate the eVect of carbon-beam irradiation on adenovirus-mediated p53 transfer in human cervix adenocarcinoma.Materials and methods The HeLa cells pre-exposed to carbon-beam or -ray, were infected with replication-deficient adenovirus recombinant vectors, containing human wild-type p53 (AdCMV-p53) and green Xuorescent protein (GFP) (AdCMV–GFP), respectively. The GFP transfer and p53 expression were detected by Xow cytometric analysis.Results The GFP transfer frequency in C-beam with AdCMV-GFP groups was 38–50% more than that inγ-ray with AdCMV–GFP groups. The percentage of p53 positive cells in the C-beam with AdCMV–p53 groups was 34–55.6% more than that in γ-ray with AdCMV-p53 groups (p < 0.05), suggesting that subclinical-dose C-beam irradiation could signiWcantly promote exogenous p53 transfer and p53 expression, and extend the duration of p53 expression in the HeLa cells. The expression of p21 increased with p53 expression in HeLa cells. The survival fractions for the 0.5–1.0 Gy C-beam with AdCMV-p53 groups were 38–43% less than those for the isodose γ-ray with AdCMV-p53 groups, and 31–40% less than those for the C-beam only groups (p <0.05).Conclusions The subclinical-dose C-beam irradiation could signiWcantly promote the transfer and expression of exogenous p53, extend the duration of p53 expression, and enhance the suppression of p53 on cervix adenocarcinoma cells.

Analysis of sky conditions using 40 year records of solar radiation data in China

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