Effect of wavelength of sensitizing light on holographic storage properties in LiNbO3 : Fe : Ni crystal

By sensitizing with 514 nm green light, 488 nm blue light and 390 nm ultraviolet light, respectively, recording with 633 nm red light, effect of wavelength of sensitizing light on holographic storage properties in LiNbO3:Fe:Ni crystal is investigated in detail. It is shown that by shortening the wavelength of sensitizing light gradually, nonvolatile holographic recording properties of oxidized LiNbO3:Fe:Ni crystal is optimized gradually, 390 nm ultraviolet light is the best as the sensitizing light. Considering the absorption of sensitizing light, to obtain the best performance in two-center holographic recording we must choose a sensitizing wavelength that is long enough to prevent unwanted absorptions (band-to-band, etc.) and short enough to result in efficient sensitization from the deep traps. So in practice a trade-off is always needed. Explanation is presented theoretically. (c) 2005 Elsevier GmbH. All rights reserved.

Energy loss of light ions channeling in silicon

Experimental measurements of rate of energy loss were made for protons of energy .5 to 1.6 MeV channeling through 1 μm thick silicon targets along the <110>, <111>, and <211> axial directions, and the {100}, {110}, {111}, and {211} planar directions. A .05% resolution automatically controlled magnetic spectrometer was used. The data are presented graphically along with an extensive summary of data in the literature. The data taken cover a wider range of channels than has previously been examined, and are in agreement with the data of F. Eisen, et al., Radd. Eff. 13, 93 (1972).

The theory in the literature for channeling energy loss due to interaction with local electrons, core electrons, and distant valence electrons of the crystal atoms is summarized. Straggling is analyzed, and a computer program which calculates energy loss and straggling using this theory and the Moliere approximation to the Thomas Fermi potential, V_TF, and the detailed silicon crystal structure is described. Values for the local electron density Z_loc in each of the channels listed above are extracted from the data by graphical matching of the experimental and computer results.

Zeroth and second order contributions to Z_loc as a function of distance from the center of the channel were computed from ∇²V_TF = 4πρ for various channels in silicon. For data taken in this work and data of F. Eisen, et al., Rad. Eff. 13, 93 (1972), the calculated zeroth order contribution to Z_loc lies between the experimentally extracted Z_loc values obtained by using the peak and the leading edge of the transmission spectra, suggesting that the observed straggling is due both to statistical fluctuations and to path variation.

A study of T=1, T=3/2, and T=2 states in some light nuclei using (He^3,n) reactions

The (He³, n) reactions on B¹¹, N¹⁵, O¹⁶, and O¹⁸ targets have been studied using a pulsed-beam time-of-flight spectrometer. Special emphasis was placed upon the determination of the excitation energies and properties of states with T = 1 (in Ne¹⁸), T = 3/2 (in N¹³ and F¹⁷) and T = 2 (in Ne²⁰). The identification of the T = 3/2 and T = 2 levels is based on the structure of these states as revealed by intensities and shapes of angular distributions. The reactions are interpreted in terms of double stripping theory. Angular distributions have been compared with plane and distorted wave stripping theories. Results for the four reactions are summarized below:

1) O¹⁶ (He³, n). The reaction has been studied at incident energies up to 13.5 MeV and two previously unreported levels in Ne¹⁸ were observed at E_x = 4.55 ± .015 MeV (Γ = 70 ± 30 keV) and E_x = 5.14 ± .018 MeV (Γ = 100 ± 40 keV).

2) B¹¹ (He³, n). The reaction has been studied at incident energies up to 13.5 MeV. Three T = 3/2 levels in N¹³ have been identified at E_x = 15.068 ± .008 MeV (Γ ˂ 15 keV), E_x = 18.44 ± .04, and E_x 18.98 ± .02 MeV (Γ = 40 ± 20 keV).

3) N¹⁵ (He³, n). The reaction has been studied at incident energies up to 11.88 MeV. T = 3/2 levels in F¹⁷ have been identified at E_x = 11.195 ± .007 MeV (Γ ˂ 20 keV), E_x = 12.540 ± .010 MeV (Γ ˂ 25 keV), and E_x = 13.095 ± .009 MeV (Γ ˂ 25 keV).

4) O¹⁸ (He³, n). The reaction has been studied at incident energies up to 9.0 MeV. The excitation energy of the lowest T = 2 level in Ne²⁰ has been found to be 16.730 ± .006 MeV (Γ ˂ 20 keV).

Angular distributions of the transitions leading to the above higher isospin states are well described by double stripping theory. Analog correspondences are established by comparing the present results with recent studies (t, p) and (He³, p) reactions on the same targets.

Wavelength dependence of light-induced domain nucleation in MgO-doped congruent LiNbO3 crystal

Within the wavelength range from 351 to 799 nm, the different reductions of nucleation field induced by the focused continuous laser irradiation are achieved in the 5 mol % MgO-doped congruent LiNbO3 crystals. The reduction proportion increases exponentially with decreasing irradiation wavelength and decreases exponentially with increasing irradiation wavelength. At one given wavelength, the reduction proportion increases exponentially with increasing irradiation intensity. An assumption is proposed that the reduction of nucleation field is directly related to the defect structure of crystal lattice generated by the complex coaction of incident irradiation field and external electric field. (c) 2007 American Institute of Physics.

Measuring temporal fluctuation on femtosecond scale in a random medium

We report an observation of femtosecond optical fluctuations of transmitted light when a coherent femtosecond pulse propagates through a random medium. They are a result of random interference among scattered waves coming from different trajectories in the time domain. Temporal fluctuations are measured by using cross-correlated frequency optical gating. It is shown that a femtosecond pulse will be broadened and distorted in pulse shape while it is propagating in random medium. The real and imaginary components of transmitted electric field are also distorted severely. The average of the fluctuated transmission pulses yields a smooth profile, probability functions show good agreement with Gaussian distribution. (c) 2007 Elsevier B.V. All rights reserved.

Parallel plate interferometer with a reflecting mirror for measuring angular displacement

A parallel plate interferometer with a reflecting mirror for measuring angular displacement is proposed. A deflection angle of a beam caused by an angular displacement is amplified by use of a reflecting mirror to increase the optical path difference (OPD) in the plane-parallel plate, which provides high sensitivity of the phase measurement. Detection of light transmitted through the plane-parallel plate with a position sensitive detector (PSD) enables high accurate measurement of the initial angle of incidence to the plane-parallel plate with insensitivity to stray light. The improved parallel plate interferometer achieves a measurement repeatability of 10(-8) rad. (C) 2007 The Optical Society of Japan.

Spontaneous and stimulated light emission due to radiative recombination in forward biased lead telluride P-N junctions

Since the discovery in 1962 of laser action in semiconductor diodes made from GaAs, the study of spontaneous and stimulated light emission from semiconductors has become an exciting new field of semiconductor physics and quantum electronics combined. Included in the limited number of direct-gap semiconductor materials suitable for laser action are the members of the lead salt family, i.e . PbS, PbSe and PbTe. The material used for the experiments described herein is PbTe . The semiconductor PbTe is a narrow band- gap material (E_g = 0.19 electron volt at a temperature of 4.2°K). Therefore, the radiative recombination of electron-hole pairs between the conduction and valence bands produces photons whose wavelength is in the infrared (λ ≈ 6.5 microns in air).

The p-n junction diode is a convenient device in which the spontaneous and stimulated emission of light can be achieved via current flow in the forward-bias direction. Consequently, the experimental devices consist of a group of PbTe p-n junction diodes made from p –type single crystal bulk material. The p - n junctions were formed by an n-type vapor- phase diffusion perpendicular to the (100) plane, with a junction depth of approximately 75 microns. Opposite ends of the diode structure were cleaved to give parallel reflectors, thereby forming the Fabry-Perot cavity needed for a laser oscillator. Since the emission of light originates from the recombination of injected current carriers, the nature of the radiation depends on the injection mechanism.

The total intensity of the light emitted from the PbTe diodes was observed over a current range of three to four orders of magnitude. At the low current levels, the light intensity data were correlated with data obtained on the electrical characteristics of the diodes. In the low current region (region A), the light intensity, current-voltage and capacitance-voltage data are consistent with the model for photon-assisted tunneling. As the current is increased, the light intensity data indicate the occurrence of a change in the current injection mechanism from photon-assisted tunneling (region A) to thermionic emission (region B). With the further increase of the injection level, the photon-field due to light emission in the diode builds up to the point where stimulated emission (oscillation) occurs. The threshold current at which oscillation begins marks the beginning of a region (region C) where the total light intensity increases very rapidly with the increase in current. This rapid increase in intensity is accompanied by an increase in the number of narrow-band oscillating modes. As the photon density in the cavity continues to increase with the injection level, the intensity gradually enters a region of linear dependence on current (region D), i.e. a region of constant (differential) quantum efficiency.

Data obtained from measurements of the stimulated-mode light-intensity profile and the far-field diffraction pattern (both in the direction perpendicular to the junction-plane) indicate that the active region of high gain (i.e. the region where a population inversion exists) extends to approximately a diffusion length on both sides of the junction. The data also indicate that the confinement of the oscillating modes within the diode cavity is due to a variation in the real part of the dielectric constant, caused by the gain in the medium. A value of τ ≈ 10^-9 second for the minority- carrier recombination lifetime (at a diode temperature of 20.4°K) is obtained from the above measurements. This value for τ is consistent with other data obtained independently for PbTe crystals.

Data on the threshold current for stimulated emission (for a diode temperature of 20. 4°K) as a function of the reciprocal cavity length were obtained. These data yield a value of J’_th = (400 ± 80) amp/cm² for the threshold current in the limit of an infinitely long diode-cavity. A value of α = (30 ± 15) cm^-1 is obtained for the total (bulk) cavity loss constant, in general agreement with independent measurements of free- carrier absorption in PbTe. In addition, the data provide a value of n_s ≈ 10% for the internal spontaneous quantum efficiency. The above value for n_s yields values of t_b ≈ τ ≈ 10^-9 second and t_s ≈ 10^-8 second for the nonradiative and the spontaneous (radiative) lifetimes, respectively.

The external quantum efficiency (n_d) for stimulated emission from diode J-2 (at 20.4° K) was calculated by using the total light intensity vs. diode current data, plus accepted values for the material parameters of the mercury- doped germanium detector used for the measurements. The resulting value is n_d ≈ 10%-20% for emission from both ends of the cavity. The corresponding radiative power output (at λ = 6.5 micron) is 120-240 milliwatts for a diode current of 6 amps.

一种基于平板横向剪切干涉的角位移测量方法

在一种已有的角位移干涉测量技术的基础上,提出一种改进的角位移测量方法。通过选择合适的初始入射角,使从平板前后表面反射的两光束实现剪切干涉。采用一维位置探测器测量光束经透镜会聚后在探测器光敏面上的光点偏移量。根据干涉信号的相位和光点偏移量可以计算出被测物体的角位移。在该测量方案中,引入的一平面反射镜与被测物体的反射面形成光程差放大系统,提高了角位移测量灵敏度。分析了初始入射角对剪切比的影响,并讨论了基于该方案的角位移测量精度。实验结果表明,基于该技术的角位移重复测量精度达到10-8 rad数量级。

消除正弦相位调制干涉仪中光强调制影响的全光纤干涉仪

在激光二极管(LD)正弦相位调制(LD-SPM)干涉仪中,通过注入电流调制激光二极管波长的同时,光源输出的光强也被调制,成为测量误差的主要来源之一。提出一种新的消除激光二极管正弦相位调制干涉仪中光强调制影响的干涉仪,给出了具体的理论分析。该干涉仪采用全光纤结构,有效减小外界干扰对干涉测量的影响;采用容易实现的前置信号处理电路和实时相位检测器对干涉信号进行处理,消除了激光二极管光强调制产生的测量误差;同时实现了物体微小位移的高精度实时测量,测量的重复精度达到1 nm。实验结果与其他消除光强调制影响的方法测得

A high-speed image sensing technique with adjustable frame rate based on an ordinary CCD

In the sinusoidal phase modulating interferometer technique, the high-speed CCD is necessary to detect the interference signals. The reason of ordinary CCD's low frame rate was analyzed, and a novel high-speed image sensing technique with adjustable frame rate based on ail ordinary CCD was proposed. And the principle of the image sensor was analyzed. When the maximum frequency and channel bandwidth were constant, a custom high-speed sensor was designed by using the ordinary CCD under the control of the special driving circuit. The frame rate of the ordinary CCD has been enhanced by controlling the number of pixels of every frame; therefore, the ordinary of CCD can be used as the high frame rate image sensor with small amount of pixels. The multi-output high-speed image sensor has the deficiencies of low accuracy, and high cost, while the high-speed image senor with small number of pixels by using this technique can overcome theses faults. The light intensity varying with time was measured by using the image sensor. The frame rate was LIP to 1600 frame per second (f/s), and the size of every frame and the frame rate were adjustable. The correlation coefficient between the measurement result and the standard values were higher than 0.98026, and the relative error was lower than 0.53%. The experimental results show that this sensor is fit to the measurements of sinusoidal phase modulating interferometer technique. (c) 2007 Elsevier GmbH. All rights reserved.

Real-time micro-vibration measurement in sinusoidal phase-modulating interferometry

As there exist some problems with the previous laser diode (LD) real-time microvibration measurement interferometers, such as low accuracy, correction before every use, etc., in this paper, we propose a new technique to realize the real-time microvibration measurement by using the LD sinusoidal phase-modulating interferometer, analyze the measurement theory and error, and simulate the measurement accuracy. This interferometer utilizes a circuit to process the interference signal in order to obtain the vibration frequency and amplitude of the detective signal, and a computer is not necessary in it. The influence of the varying light intensity and light path difference on the measurement result can be eliminated. This technique is real-time, convenient, fast, and can enhance the measurement accuracy too. Experiments show that the repeatable measurement accuracy is less than 3.37 nm, and this interferometer can be applied to real-time microvibration measurement of the MEMS. (C) 2007 Elsevier GmbH. All rights reserved.