A critical analysis of loudness calculation methods

The physical meaning and methods of determining loudness were reviewed Loudness is a psychoacoustic metric which closely corresponds to the perceived intensity of a sound stimulus. It can be determined by graphical procedures, numerical methods, or by commercial software. These methods typically require the consideration of the 1/3 octave band spectrum of the sound of interest. The sounds considered in this paper are a 1 kHz tone and pink noise. The loudness of these sounds was calculated in eight ways using different combinations of input data and calculation methods. All the methods considered are based on Zwicker loudness. It was determined that, of the combinations considered, only the commercial software dBSonic and the loudness calculation procedure detailed in DIN 45631 using 1/3 octave band levels filtered using ANSI S1.11-1986 gave the correct values of loudness for a 1 kHz tone. Comparing the results between the sources also demonstrated the difference between sound pressure level and loudness. It was apparent that the calculation and filtering methods must be considered together, as a given calculation will produce different results for different 1/3 octave band input. In the literature reviewed, no reference provided a guide to the selection of the type of filtering that should be used in conjunction with the loudness computation method.

黑腹果蝇黑条体突变体突变位点的鉴定

根据果蝇ebony基因的序列设计了一系列特异性引物,对1991年发现的一种黑腹果蝇的新的体色突 变(Qian&Zhang,1994)——黑条体突变型的ebony基因进行克隆和序列测定。与野生型W91910的ebony基因 相比,黑条体突变型的ebony基因的编码区无明显的大片段变异,变异仅存在于数个氨基酸位点,且均不位于 该基因产物的关键序列。在黑条体的ebony基因的5’端序列的克隆和序列测定中发现,与野生型W91910及黑檀体 e’的ebony基因相比,黑条体突变型的ebony基因有一个大片段的缺失,

Hydrogel-driven carbon nanotube microtransducers

We demonstrate the fabrication and integration of active microstructures based on composites of 3D carbon nanotube (CNT) frameworks and hydrogels. The alignment of the CNTs within the microstructures converts the isotropic expansion of the gel into a directed anisotropic motion. Actuation by a moisture-responsive gel is observed by changing the ambient humidity, and is predicted by a finite element model of the composite system. These shape changes are rapid and can be transduced electrically within a microfluidic channel, by measuring the resistance change across a CNT microstructure during expansion of the gel. Our results suggest that combinations of gels with aligned CNTs can be a platform for directing the actuation of gels and measuring their response to stimuli. © 2011 The Royal Society of Chemistry.

The dominant role of the solvent-water interface in water droplet templating of polymers

We investigate the formation of microstructured polymer networks known as Breath Figure templated structures created by the presence of water vapour over evaporating polymer solutions. We use a highly controlled experimental approach to examine this dynamic and non-equilibrium process to uniquely compare pure solvent systems with polymer solutions and demonstrate using a combination of optical microscopy, focused ion-beam milling and SEM analysis that the porous polymer microstructure is completely controlled by the interfacial forces that exist between the water droplet and the solvent until a final drying dilation of the imprints. Water droplet contact angles are the same in the presence or absence of polymer and are independent of size for droplets above 5 μm. The polymer acts a spectator that serves to trap water droplets present at the air interface, and to transfer their shape into the polymer film. For the smallest pores, however, there are unexpected variations in the contact angle with pore size that are consistent with a possible contribution from line tension at these smaller dimensions. © The Royal Society of Chemistry.

Fracture Properties of LPCVD Silicon Nitride and Thermally Grown Silicon Oxide Thin Films From the Load-Deflection of Long Si3N4 and SiO2/Si3N4 Diaphragms

The bulge test is successfully extended to the determination of the fracture properties of silicon nitride and oxide thin films. This is achieved by using long diaphragms made of silicon nitride single layers and oxide/nitride bilayers, and applying comprehensive mechanical model that describes the mechanical response of the diaphragms under uniform differential pressure. The model is valid for thin films with arbitrary z-dependent plane-strain modulus and prestress, where z denotes the coordinate perpendicular to the diaphragm. It takes into account the bending rigidity and stretching stiffness of the layered materials and the compliance of the supporting edges. This enables the accurate computation of the load-deflection response and stress distribution throughout the composite diaphragm as a function of the load, in particular at the critical pressure leading to the fracture of the diaphragms. The method is applied to diaphragms made of single layers of 300-nm-thick silicon nitride deposited by low-pressure chemical vapor deposition and composite diaphragms of silicon nitride grown on top of thermal silicon oxide films produced by wet thermal oxidation at 950 degrees C and 1050 degrees C with target thicknesses of 500, 750, and 1000 mn. All films characterized have an amorphous structure. Plane-strain moduli E-ps and prestress levels sigma(0) of 304.8 +/- 12.2 GPa and 1132.3 +/- 34.4 MPa, respectively, are extracted for Si3N4, whereas E-ps = 49.1 +/- 7.4 GPa and sigma(0) = -258.6 +/- 23.1 MPa are obtained for SiO2 films. The fracture data are analyzed using the standardized form of the Weibull distribution. The Si3N4 films present relatively high values of maximum stress at fracture and Weibull moduli, i.e., sigma(max) = 7.89 +/- 0.23 GPa and m = 50.0 +/- 3.6, respectively, when compared to the thermal oxides (sigma(max) = 0.89 +/- 0.07 GPa and m = 12.1 +/- 0.5 for 507-nm-thick 950 degrees C layers). A marginal decrease of sigma(max) with thickness is observed for SiO2, with no significant differences between the films grown at 950 degrees C and 1050 degrees C. Weibull moduli of oxide thin films are found to lie between 4.5 +/- 1.2 and 19.8 +/- 4.2, depending on the oxidation temperature and film thickness.

Broadband Emitting Superluminescent Diodes With InAs Quantum Dots in AlGaAs Matrix

Superluminescent diodes were fabricated by using InAs-AlGaAs self-assembled quantum dots (QDs) as the active region. The ultrawide emitting spectrum of 142 nm was achieved. The short migration length of indium adatoms on AlGaAs surface increases the size dispersion of InAs QDs, resulting in the broadening of optical gain spectrum.

Effects of Ag on electrical properties of Ag/Ni/p-GaN ohmic contact

Properties of the Ag/Ni/p-GaN structure at different temperatures are studied by Auger electron spectroscopy, scanning electron microscopy and high resolution x-ray diffraction. The effect of Ag in ohmic contact on the crystalline quality is investigated and the optimized value of annealing temperature is reported. The lowest specific contact resistance of 2.5 x 10(-4) Omega cm(2) is obtained at annealing temperature of 550 degrees C.

Defects in GaN films grown on Si(111) substrates by metal-organic chemical vapour deposition

We report the transmission-electron microscopy study of the defects in wurtzitic GaN films grown on Si(111) substrates with AIN buffer layers by the metal-organic chemical vapour deposition method. The In0.1Ga0.9N/GaN multiple quantum well (MQW) reduced the dislocation density by obstructing the mixed and screw dislocations passing through the MQW. No evident reduction of the edge dislocations density by the MQW was observed. It was found that dislocations with screw component can be located at the boundaries of sub-grains slightly in-plane misoriented.

Micro-Raman study on hydrogenated protocrystalline silicon films

Good quality hydrogenated protocrystalline silicon films were successfully prepared by radio frequency plasma enhanced chemical vapor deposition (PECVD) with various hydrogen dilution ratios (R = ([H-2]/[SiH4]) from 10 to 100). The photosensitivity of the films is up to 10(6) under the light intensity of 50mW.cm(-2). The microstructure of the films was studied by micro-region Raman scattering spectra at room temperature. The deconvolution of the Raman spectra by Gaussion functions shows that the films deposited under low hydrogen dilution ratios (R < 33) exhibit typical amorphous properties, while the films deposited under high hydrogen dilution ratios (R > 50) possess a diphasic structure, with increasing crystalline volume fraction with R. The size of the crystallites in the diphasic films is about 2.4 mm, which was deduced from the phonon confinement model. The intermediate range order of the silicon film increases with increasing hydrogen dilution ratio.

基于进程行为的异常检测模型

利用系统漏洞实施攻击是目前计算机安全面临的主要威胁.本文提出了一种基于进程行为的异常检测模型.该模型引入了基于向量空间的相似度计算算法和反向进程频率等概念,区分了不同系统调用对定义正常行为的不同作用,提高了正常行为定义的准确性;该模型的检测算法针对入侵造成异常的局部性特点,采用了局部分析算法,降低了误报率.

非线性放大环形镜“8”字腔光纤激光器实验研究

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注入噪声对光纤激光器锁模启动的影响

国家自然科学基金资助课题(60537060)