Caracterização elétrica de túnel-FET em estrutura de nanofio com fontes de SiGe e Ge em função da temperatura.

Este trabalho teve como objetivo estudar os transistores de tunelamento por efeito de campo em estruturas de nanofio (NW-TFET), sendo realizado através de analises com base em explicações teóricas, simulações numéricas e medidas experimentais. A fim de avaliar melhorar o desempenho do NW-TFET, este trabalho utilizou dispositivos com diferentes materiais de fonte, sendo eles: Si, liga SiGe e Ge, além da variação da espessura de HfO2 no material do dielétrico de porta. Com o auxílio de simulações numéricas foram obtidos os diagramas de bandas de energia dos dispositivos NW-TFET com fonte de Si0,73Ge0,27 e foi analisada a influência de cada um dos mecanismos de transporte de portadores para diversas condições de polarização, sendo observado a predominância da influência da recombinação e geração Shockley-Read-Hall (SRH) na corrente de desligamento, do tunelamento induzido por armadilhas (TAT) para baixos valores de tensões de porta (0,5V > VGS > 1,5V) e do tunelamento direto de banda para banda (BTBT) para maiores valores tensões de porta (VGS > 1,5V). A predominância de cada um desses mecanismos de transporte foi posteriormente comprovada com a utilização do método de Arrhenius, sendo este método adotado em todas as análises do trabalho. O comportamento relativamente constante da corrente dos NW-TFETs com a temperatura na região de BTBT tem chamado a atenção e por isso foi realizado o estudo dos parâmetros analógicos em função da temperatura. Este estudo foi realizado comparando a influência dos diferentes materiais de fonte. O uso de Ge na fonte, permitiu a melhora na corrente de tunelamento, devido à sua menor banda proibida, aumentando a corrente de funcionamento (ION) e a transcondutância do dispositivo. Porém, devido à forte dependência de BTBT com o campo elétrico, o uso de Ge na fonte resulta em uma maior degradação da condutância de saída. Entretanto, a redução da espessura de HfO2 no dielétrico de porta resultou no melhor acoplamento eletrostático, também aumentando a corrente de tunelamento, fazendo com que o dispositivo com fonte Ge e menor HfO2 apresentasse melhores resultados analógicos quando comparado ao puramente de Si. O uso de diferentes materiais durante o processo de fabricação induz ao aumento de defeitos nas interfaces do dispositivo. Ao longo deste trabalho foi realizado o estudo da influência da densidade de armadilhas de interface na corrente do dispositivo, demonstrando uma relação direta com o TAT e a formação de uma região de platô nas curvas de IDS x VGS, além de uma forte dependência com a temperatura, aumentando a degradação da corrente para temperaturas mais altas. Além disso, o uso de Ge introduziu maior número de impurezas no óxido, e através do estudo de ruído foi observado que o aumento na densidade de armadilhas no óxido resultou no aumento do ruído flicker em baixa frequência, que para o TFET, ocorre devido ao armadilhamento e desarmadilhamento de elétrons na região do óxido. E mais uma vez, o melhor acoplamento eletrostático devido a redução da espessura de HfO2, resultou na redução desse ruído tornando-se melhor quando comparado à um TFET puramente de Si. Neste trabalho foi proposto um modelo de ruído em baixa frequência para o NW-TFET baseado no modelo para MOSFET. Foram realizadas apenas algumas modificações, e assim, obtendo uma boa concordância com os resultados experimentais na região onde o BTBT é o mecanismo de condução predominante.

Polarimetric SAR model for soil moisture estimation over vineyards at C-band

In this paper we propose a two-component polarimetric model for soil moisture estimation on vineyards suited for C-band radar data. According to a polarimetric analysis carried out here, this scenario is made up of one dominant direct return from the soil and a multiple scattering component accounting for disturbing and nonmodeled signal fluctuations from soil and short vegetation. We propose a combined X-Bragg/Fresnel approach to characterize the polarized direct response from soil. A validation of this polarimetric model has been performed in terms of its consistency with respect to the available data both from RADARSAT-2 and from indoor measurements. High inversion rates are reported for different phenological stages of vines, and the model gives a consistent interpretation of the data as long as the volume component power remains about or below 50% of the surface contribution power. However, the scarcity of soil moisture measurements in this study prevents the validation of the algorithm in terms of the accuracy of soil moisture retrieval and an extensive campaign is required to fully demonstrate the validity of the model. Different sources of mismatches between the model and the data have been also discussed and analyzed.

Efficient sampling of band-limited signals from sine wave crossings

This correspondence presents an efficient method for reconstructing a band-limited signal in the discrete domain from its crossings with a sine wave. The method makes it possible to design A/D converters that only deliver the crossing timings, which are then used to interpolate the input signal at arbitrary instants. Potentially, it may allow for reductions in power consumption and complexity in these converters. The reconstruction in the discrete domain is based on a recently-proposed modification of the Lagrange interpolator, which is readily implementable with linear complexity and efficiently, given that it re-uses known schemes for variable fractional-delay (VFD) filters. As a spin-off, the method allows one to perform spectral analysis from sine wave crossings with the complexity of the FFT. Finally, the results in the correspondence are validated in several numerical examples.

Polarimetric Response of Rice Fields at C-Band: Analysis and Phenology Retrieval

A set of ten RADARSAT-2 images acquired in fully polarimetric mode over a test site with rice fields in Seville, Spain, has been analyzed to extract the main features of the C-band radar backscatter as a function of rice phenology. After observing the evolutions versus phenology of different polarimetric observables and explaining their behavior in terms of scattering mechanisms present in the scene, a simple retrieval approach has been proposed. This algorithm is based on three polarimetric observables and provides estimates from a set of four relevant intervals of phenological stages. The validation against ground data, carried out at parcel level for a set of six stands and up to nine dates per stand, provides a 96% rate of coincidence. Moreover, an equivalent compact-pol retrieval algorithm has been also proposed and validated, providing the same performance at parcel level. In all cases, the inversion is carried out by exploiting a single satellite acquisition, without any other auxiliary information.

Organotitanias: a versatile approach for band gap reduction in titania based materials

The reduction of the band gap of titania is critically important to fully utilize its photocatalytic properties. Two main strategies, i.e. doping and partial reduction of Ti(IV), are the main alternatives available to date. Herein, we report a new synthesis strategy based on one-pot co-condensation of in situ prepared polymetallic titanium-alkoxide complexes with titanium tetrabutoxide. Using this direct reaction, it is possible to introduce organic compounds in the anatase phase, causing site distortions in the crystalline structure of the network. By using this strategy, a yellow and a black titania have been produced, with the latter showing a remarkable photocatalytic activity under visible-light.

Retrieval of phenological stages of onion fields during the first year of growth by means of C-band polarimetric SAR measurements

The phenological stages of onion fields in the first year of growth are estimated using polarimetric observables and single-polarization intensity channels. Experiments are undertaken on a time series of RADARSAT-2 C-band full-polarimetric synthetic aperture radar (SAR) images collected in 2009 over the Barrax region, Spain, where ground truth information about onion growth stages is provided by the European Space Agency (ESA)-funded agricultural bio/geophysical retrieval from frequent repeat pass SAR and optical imaging (AgriSAR) field campaign conducted in that area. The experimental results demonstrate that polarimetric entropy or copolar coherence when used jointly with the cross-polarized intensity allows unambiguously distinguishing three phenological intervals.

Influence of Incidence Angle on the Coherent Copolar Polarimetric Response of Rice at X-Band

The coherent nature of the acquisition by TerraSAR-X of both copolar channels (HH and VV) enables the generation of many different polarimetric observables with physical interpretation, as have recently been used for monitoring rice fields. In this letter, the influence of incidence angle upon these polarimetric observables is analyzed by comparing three stacks of images that were acquired simultaneously at different incidence angles (22°, 30°, and 40°) during a whole cultivation campaign. We show that the response of observables related to dominance (entropy, ratios of components) and type of scattering mechanisms (alpha angles) is not greatly influenced by incidence angle at some stages: early and advanced vegetative phases, and maturation. Moreover, the acquisition geometry drives the sensitivity to the presence of the initial stems and tillers, being detected earlier at shallower angles. This analysis is a necessary step before studying potential methodologies for combining different orbits and beams for reducing the time between acquisitions for monitoring purposes.

Large spin splitting in the conduction band of transition metal dichalcogenide monolayers

We study the conduction band spin splitting that arises in transition metal dichalcogenide (TMD) semiconductor monolayers such as MoS2, MoSe2, WS2, and WSe2 due to the combination of spin-orbit coupling and lack of inversion symmetry. Two types of calculation are done. First, density functional theory (DFT) calculations based on plane waves that yield large splittings, between 3 and 30 meV. Second, we derive a tight-binding model that permits to address the atomic origin of the splitting. The basis set of the model is provided by the maximally localized Wannier orbitals, obtained from the DFT calculation, and formed by 11 atomiclike orbitals corresponding to d and p orbitals of the transition metal (W, Mo) and chalcogenide (S, Se) atoms respectively. In the resulting Hamiltonian, we can independently change the atomic spin-orbit coupling constant of the two atomic species at the unit cell, which permits to analyze their contribution to the spin splitting at the high symmetry points. We find that—in contrast to the valence band—both atoms give comparable contributions to the conduction band splittings. Given that these materials are most often n-doped, our findings are important for developments in TMD spintronics.