Surface modification of titania aerogel films by oxygen plasma treatment for enhanced dye adsorption

Titania aerogels were synthesized by sol-gel route followed by ambient pressure subcritical drying technique. The aerogels synthesized in the present work possess a maximum surface area of 252 m(2)/g. The pore size distribution is between 2 and 30 nm which confirms their mesoporosity. The oxygen plasma treatment on titania aerogel thin films improved the surface area up to 273 m(2)/g and produced additional hydrophilic groups on the surface. It is confirmed by BET surface area, XPS and thermal analysis in conjunction with dye adsorption studies. After plasma treatment the dye adsorption capacity was increased 2.5 times higher than that of untreated aerogel film. The increased surface area and the hydrophilic groups generated on the titania aerogel surface during plasma treatment are responsible for enhanced dye adsorption. The overall nanoporous morphology of titania aerogel is preserved after plasma treatment. (C) 2015 Elsevier B.V. All rights reserved.

Influence of the Processing Conditions on the Characteristics of the Clad Layers Produced with Laminar Plasma Technology

Laminar plasma technology was used to produce ceramic hardened layers of Al2O3-40% mass Ni composite powders on stainless steel substrates. In order to investigate the influences of processing conditions on the morphologies of the surface modified layers, two different powder-feeding methods were tested, one with carrier gas called the powder injection method, and the other without carrier gas called powder transfers method. The microscopic investigations demonstrate that the cross-section of the clad layers consists of two distinct microstructural regions, in which the Al2O3 phases exhibit different growth mechanisms. When the powder transfers method is adopted, the number density and volume fraction of the Al2O3 particles increase considerably and their distributions exhibit zonal periodical characteristics. When the powder-feeding rate increases, the microstructure of the Al2O3 phases changes from a small globular to a long needle shape. Finite element simulations show that the transient thermo-physical features of the pool substances, such as solidification rate and cooling rate, influence strongly the mechanisms of the nucleation and the directional growth of the Al2O3 phases in the thermal processing.

Low-temperature growth of carbon nanotubes by plasma-enhanced chemical vapor deposition

Vertically aligned carbon nanotubes were grown at temperatures as low as 120degreesC by plasma-enhanced chemical vapor deposition. A systematic study of the temperature dependence of the growth rate and the structure of the as-grown nanotubes is presented using a C2H2/NH3 system and nickel as the catalyst. The activation energy for the growth rate was found to be 0.23 eV, much less than for thermal chemical vapor deposition (1.2-1.5 eV). This suggests growth occurs by surface diffusion of carbon on nickel. The result could allow direct growth of nanotubes onto low-temperature substrates like plastics, and facilitate the integration in sensitive nanoelectronic devices. (C) 2003 American Institute of Physics.

The role of the catalytic particle in the growth of carbon nanotubes by plasma enhanced chemical vapor deposition

Vertically aligned carbon nanotubes were synthesized by plasma enhanced chemical vapor deposition using nickel as a metal catalyst. High resolution transmission electron microscopy analysis of the particle found at the tip of the tubes reveals the presence of a metastable carbide Ni3C. Since the carbide is found to decompose upon annealing at 600 degreesC, we suggest that Ni3C is formed after the growth is stopped due to the rapid cooling of the Ni-C interstitial solid solution. A detailed description of the tip growth mechanism is given, that accounts for the composite structure of the tube walls. The shape and size of the catalytic particle determine the concentration gradient that drives the diffusion of C atoms across and though the metal. (C) 2004 American Institute of Physics.

A comparative study of plasma-enhanced chemical vapor gate dielectrics for solution-processed polymer thin-film transistor circuit integration

This paper considers plasma-enhanced chemical vapor deposited (PECVD) silicon nitride (SiNx) and silicon oxide (SiOx) as gate dielectrics for organic thin-film transistors (OTFTs), with solution-processed poly[5, 5′ -bis(3-dodecyl-2-thienyl)-2, 2′ -bithiophene] (PQT-12) as the active semiconductor layer. We examine transistors with SiNx films of varying composition deposited at 300 °C as well as 150 °C for plastic compatibility. The transistors show over 100% (two times) improvement in field-effect mobility as the silicon content in SiNx increases, with mobility (μFE) up to 0.14 cm2 /V s and on/off current ratio (ION / IOFF) of 108. With PECVD SiOx gate dielectric, preliminary devices exhibit a μFE of 0.4 cm2 /V s and ION / IOFF of 108. PQT-12 OTFTs with PECVD SiNx and SiOx gate dielectrics on flexible plastic substrates are also presented. These results demonstrate the viability of using PECVD SiN x and SiOx as gate dielectrics for OTFT circuit integration, where the low temperature and large area deposition capabilities of PECVD films are highly amenable to integration of OTFT circuits targeted for flexible and lightweight applications. © 2008 American Institute of Physics.

Properties of amorphous carbon-silicon alloys deposited by a high plasma density source

The addition of silicon to hydrogenated amorphous carbon can have the advantageous effect of lowering the compressive stress, improving the thermal stability of its hydrogen, and maintaining a low friction coefficient up to high humidity. Most experiments to date have been on hydrogenated amorphous carbon-silicon alloys (a-C1-xSix:H) deposited by rf plasma enhanced chemical vapor deposition. This method gives alloys with sizeable hydrogen content and only moderate hardness. Here we use a high plasma density source known as the electron cyclotron wave resonance source to prepare films with higher sp3 content and lower hydrogen content. The composition and bonding in the alloys is determined by x-ray photoelectron spectroscopy, Rutherford backscattering, elastic recoil detection analysis, visible and ultraviolet (UV) Raman spectroscopy, infrared spectroscopy, and x-ray reflectivity. We find that it is possible to produce relatively hard, low stress, low friction, almost humidity insensitive a-C1-xSix:H alloys with a good optical transparency and a band gap well over 2.5 eV. The friction behavior and friction mechanism of these alloys are studied and compared with that of a-C:H, ta-C:H, and ta-C. We show how UV Raman spectroscopy allows the direct detection of Si-C, Si-Hx, and C-Hx vibrations, not seen in visible Raman spectra. © 2001 American Institute of Physics.

Properties of a-C:H films deposited from a methane electron cyclotron wave resonant plasma

An electron cyclotron wave resonant methane plasma discharge was used for the high rate deposition of hydrogenated amorphous carbon (a-C:H). Deposition rates of up to ∼400 Å/min were obtained over substrates up to 2.5 in. in diameter with a film thickness uniformity of ∼±10%. The deposited films were characterised in terms of their mass density, sp3 and hydrogen contents, C-H bonding, intrinsic stress, scratch resistance and friction properties. The deposited films possessed an average sp3 content, mass density and refractive index of ∼58%, 1.76 g/cm3 and 2.035 respectively.Mechanical characterisation indicated that the films possessed very low steady-state coefficients of friction (ca. 0.06) and a moderate shear strength of ∼141 MPa. Nano-indentation measurements also indicated a hardness and elastic modulus of ∼16.1 and 160 GPa respectively. The critical loads required to induce coating failure were also observed to increase with ion energy as a consequence of the increase in degree of ion mixing at the interface. Furthermore, coating failure under scratch test conditions was observed to take place via fracture within the silicon substrate itself, rather than either in the coating or at the film/substrate interface. © 2003 Elsevier B.V. All rights reserved.

Methane chemistry involved in a low-pressure electron cyclotron wave resonant plasma discharg

A low-pressure methane plasma generated by electron cyclotron wave resonance was characterized in terms of electron temperature, plasma density and composition. Methane plasmas were commonly used in the deposition of hydrogenated amorphous carbon thin films. Little variation in the plasma chemistry was observed by mass spectrometry measurements of the gas phase with increasing electron temperature. The results show that direct electron-impact reactions exert greater influence on the plasma chemistry than secondary ion-neutral reactions.

(Ti,Al)N Film On Normalized T8 Carbon Tool Steel Prepared By Pulsed High Energy Density Plasma Technique

Under optimized operating parameters, a hard and wear resistant ( Ti,Al)N film is prepared on a normalized T8 carbon tool steel substrate by using pulsed high energy density plasma technique. Microstructure and composition of the film are analysed by x-ray diffraction, x-ray photoelectron spectroscopy, Auger electron spectroscopy and scanning electron microscopy. Hardness profile and tribological properties of the film are tested with nano-indenter and ring-on-ring wear tester, respectively. The tested results show that the microstructure of the film is dense and uniform and is mainly composed of ( Ti,Al)N and AlN hard phases. A wide transition interface exists between the film and the normalized T8 carbon tool steel substrate. Thickness of the film is about 1000 nm and mean hardness value of the film is about 26GPa. Under dry sliding wear test conditions, relative wear resistance of the ( Ti,Al)N film is approximately 9 times higher than that of the hardened T8 carbon tool steel reference sample. Meanwhile, the ( Ti,Al)N film has low and stable friction coefficient compared with the hardened T8 carbon tool steel reference sample.

Arc Root Motions In An Argon-Hydrogen Direct-Current Plasma Torch At Reduced Pressure

Arc root motions in generating dc argon-hydrogen plasma at reduced pressure are optically observed using a high-speed video camera. The time resolved angular position of the arc root attachment point is measured and analysed. The arc root movement is characterized as a chaotic and jumping motion along the circular direction on the anode surface.

An investigation of electromagnetic wave propagation in plasma by shock tube

This paper presents the electromagnetic wave propagation characteristics in plasma and the attenuation coefficients of the microwave in terms of the parameters n(e), v, w, L, w(b). The phi800 mm high temperature shock tube has been used to produce a uniform plasma. In order to get the attenuation of the electromagnetic wave through the plasma behind a shock wave, the microwave transmission has been used to measure the relative change of the wave power. The working frequency is f = (2 similar to 35) GHz (w = 2pif, wave length lambda = 15 cm similar to 8 mm). The electron density in the plasma is n(e) = (3 x 10(10) similar to 1 x 10(14)) cm(-3). The collision frequency v = (1 x 10(8) similar to 6 x 10(10)) Hz. The thickness of the plasma layer L = (2 similar to 80) cm. The electron circular frequency w(b) = eB(0)/m(e), magnetic flux density B-0 = (0 similar to 0.84) T. The experimental results show that when the plasma layer is thick (such as L/lambda greater than or equal to 10), the correlation between the attenuation coefficients of the electromagnetic waves and the parameters n(e), v, w, L determined from the measurements are in good agreement with the theoretical predictions of electromagnetic wave propagations in the uniform infinite plasma. When the plasma layer is thin (such as when both L and lambda are of the same order), the theoretical results are only in a qualitative agreement with the experimental observations in the present parameter range, but the formula of the electromagnetic wave propagation theory in an uniform infinite plasma can not be used for quantitative computations of the correlation between the attenuation coefficients and the parameters n(e), v, w, L. In fact, if w < w(p), v(2) much less than w(2), the power attenuations K of the electromagnetic waves obtained from the measurements in the thin-layer plasma are much smaller than those of the theoretical predictions. On the other hand, if w > w(p), v(2) much less than w(2) (just v approximate to f), the measurements are much larger than the theoretical results. Also, we have measured the electromagnetic wave power attenuation value under the magnetic field and without a magnetic field. The result indicates that the value measured under the magnetic field shows a distinct improvement.

Study on the ions' behavior in an electron cyclotron resonance plasma

The energy, velocity, angle distribution of ions in magnetoactive electron cyclotron resonance plasma have been studied with a two-dimension hybrid mode. The dependence of these distribution functions versus position and pressure are discussed. Our simulation results are in good agreement with many experimental measurements. (C) 1997 American Institute of Physics.

Self-consistent kinetic modeling of electron distribution function in a low-pressure inductively coupled plasma

Based upon the spatially inhomogeneous Boltzmann equation in two-term approximation coupled with electromagnetic and fluid model analysis for the recently developed inductively coupled plasma sources, a self-consistent electron kinetic model is developed. The electron distribution function, spatial distributions of the electron density and ionization rate are calculated and discussed.

Parameter-estimation of a spherical top inductively-coupled plasma source with global-model

Using spatially averaged global model, we succeed in obtaining some plasma parameters for a low pressure inductively coupled plasma source of our laboratory. As far as the global balance is concerned, the models can give reasonable results of the parameters, such as the global electron temperature and the ion impacting energy, etc. It is found that the ion flow is hardly affected by the neutral gas pressure. Finally, the magnetic effects are calculated by means of the method. The magnetic field can play an important role to increase plasma density and ion current.

The positive floating potential of high-temperature particles in plasma

It has been predicted that the floating potential of particles in plasma may become positive when the particle surface temperature is high enough, but, to our knowledge, no positive floating potential has been obtained yet. In the present paper the floating potential theory of high-temperature particles in plasma is developed to cover the positive potential range for the first time, and a general approximate analytical formula for the positive floating potential with a thin plasma sheath and subsonic plasma flow is derived from the new model recently proposed by the authors. The results show that when the floating potential is positive, the net flux of charge incident on the particle approaches a constant similar to the 'electron saturation' phenomena in the case of the electric probes.