An electron-spin-resonance study of MN2+ doped calcium hydrazine carboxylate monohydrate

Single crystals of calcium hydrazine carboxylate, monohydrate have been studied by ESR of Mn2+ doped in the calcium sites. X-band ESR indicated a large crystal field splitting necessitating experiments at Q band. The analysis shows two magnetically inequivalent (but chemically equivalent) sites with g(xx) = 2.0042+/-0.0038, g(yy) = 2.0076 +/-00029, g(zz) =2.0314+/-0.001, A(zz) = 0.0099+/-0.0002 cm(-1), A(xx) = 0.0099+/-0.0002 cm(-1), A(yy) = 0.0082+/-0.0002cm(-1), D = 3/2D(zz) = 0.0558+/-0.0006cm(-1), and E = 1/2(D-xx-D-yy) = 0.0127+/-0.0002 cm(-1).One of the principal components of the crystal field, (D-zz), is found to be along the Ca<->Ca direction in the structure and a second one, (D-xx), along the perpendicular to the plane of the triangle formed by three neighbouring calciums. The A tensor is found to have an orientation different from that of the g and D tensors reflecting the low symmetry of the Ca2+ sites.

Creep in TiO2 doped Zirconia: Implications for high strain rate superplasticity

In ceramics, dopants offer the possibility of higher creep rates by enhancing diffusion. The present study examines the potential for high strain rate superplasticity in a TiO2 doped zirconia, by conducting creep experiments together with microstructural characterization. It is shown that both pure and doped zirconia exhibit transitions in creep behaviour from Coble diffusion creep with n similar to 1 to an interface controlled process with n similar to 2. Doping with TiO2 enhances the creep rate by over an order of magnitude. There is evidence of substantial grain boundary sliding, consistent with diffusion creep.

Growth and characterization of laser-deposited Ag-doped YBa2Cu3O7−x thin films on bare sapphire

Microstructural and superconducting properties of YBa2Cu3O7-x thin films grown in situ on bare sapphire by pulsed laser deposition using YBa2Cu3O7-x targets doped with 7 and 10 wt% Ag have been studied. Ag-doped films grown at 730 degrees C on sapphire have shown very significant improvement over the undoped YBa2Cu3O7-x films grown under identical condition. A zero resistance temperature of 90 K and a critical current density of 1.2 x 10(6) A/cm(2) at 77 K have been achieved on bare sapphire for the first time. Improved connectivity among grains and reduced reaction rate between the substrate and the film caused due to Ag in the film are suggested to be responsible for this greatly improved transport properties.

Influence of deviation from stoichiometry on the photoluminescence in CdTe doped with indium

Low temperature photoluminescence of vacuum and cadmium annealed CdTe:In is reported here. A new peak at similar to 1.14 eV related to transitions from the conduction band to an acceptor involving a tellurium vacancy has been observed.

Optical absorption and photoluminescence studies of Nd3 doped alkali boro germanate glasses

Optical absorption and photoluminescence studies have been carried out at room temperature in 25 R2O-25 GeO2-49.5 B2O3-0.5 Nd2O3 glass systems, (Composition in mol%, R= Li, Na, K and Rb). Judd Ofelt Intensity parameters and other parameters like Racah (E-1, E-2 and E-3), Slater-Condon-Shortley (F-2, F-4 and F-6) Spin-Orbit Coupling (xi(4f)) and Configuration Interaction (alpha,beta and gamma) for Nd3+ ion in the glass system are calculated. The variation of the 02 parameters are interpreted in terms of the covalency of the RE ion in the glass matrix. Further the hypersensitive transition I-4(9/2) -> (4)G(5/2), (2)G(7/2) is analyzed with respect to the intensity ratio I-L/I-S and is found to be dependent on the type of alkali in the glass matrix. The Photoluminescence studies do not show any appreciable shift in the peak emission wavelength of the F-4(3/2) to I-4(11/2) transition with the change in alkali type. (C) 2010 Elsevier B.V. All rights reserved.

Phase relations in the system Cu─Ho─O and stability of Cu2Ho2O5

The phase relations in the system Cu-Ho-O have been determined at 1300 K using X-ray diffraction, optical microscopy, and electron microprobe analysis of samples equilibrated in evacuated quartz ampules and in pure oxygen. Only one ternary compound, Cu2Ho2O5, was found to be stable. The Gibbs free energy of formation of this compound has been measured using the solid-state cell Pt,Cu2O + Cu2Ho2O5 + Ho2O3/(Y2O3)ZrO2/CuO + Cu2O,Pt in the temperature range of 973 to 1350 K. For the formation of Cu2Ho2O5 from its binary component oxides, 2CuO(s) + Ho2O3(S) --> Cu2Ho2O5(s) DELTAG-degrees = 11190 - 13.8T(+/- 120) J-mol-1 Since the formation is endothermic, CU2Ho2O5 becomes thermodynamically unstable with respect to CuO and Ho2O3 below 810 K. When the oxygen partial pressure over Cu2Ho2O5 is lowered, it decomposes according to the reaction 2Cu2Ho2O5(s) --> 2Ho2O3(s) + 2Cu2O(S) + O2(g) for which the equilibrium oxygen potential is given by DELTAmu(O2) = - 238510 + 160.2T(+/- 450) J.mol-1 The decomposition temperature at an oxygen partial pressure of 1.52 x 10(4) Pa was measured using a combined DTA-TGA apparatus. Based on these results, an oxygen potential diagram for the system Cu-Ho-O at 1300 K is presented.

Influence of grain boundary sliding on diffusion in yttria doped zirconia

Grain boundary sliding during high temperature deformation can lead to stress concentrations and an enhancement of diffusion in mobile boundaries. Experiments were conducted on a fine grained 3 mol% yttria stabilized tetragonal zirconia, under conditions associated with superplastic flow involving grain boundary sliding. Tracer diffusion studies under creep conditions and without load indicate that there is no enhancement in either the lattice or grain boundary diffusivities. The experimental creep data are consistent with an interface controlled diffusion creep mechanism. (C) 2011 Elsevier Ltd. All rights reserved.

Physics Of Undoped And Doped C-60 Fullerene

This paper contains a review of the physical properties of the undoped and alkali-doped C60 materials, including their crystal structure, electronic, optical and vibrational properties and the effect of pressure on the crystal and electronic structure. The mechanisms of superconductivity in alkali-doped C60 in terms of phonon mediated electron pairing vis-a-vis electronic interaction effects are discussed.

Preparation, structure, and properties of strontium-doped lanthanum chromites: La1−xSrxCrO3

Strontium-doped lanthanum chromites, La1−xSrxCrO3, have been synthesised to investigate the effect of strontium doping on the stability and physico-chemical characteristics of the perovskite LaCrO3. Both microscopic and X-ray examinations show that the materials exist as single phase perovskite structure for all compositions up to 50 mole% strontium substitution. The materials have been further characterized by infrared and electron paramagnetic resonance spectra. These materials show a good sinterability even in air at 1773 K. Electrical conductivity of thse perovskites has been measured as a function of temperature. Electrical conductivity has been found to be a maximum at x=0.2. The observed electrical and magnetic properties are consistent with activated polaron transport as the mechanism for electrical conduction in these materials.

Phosphate derivatives of 123 cuprates of the formula LnSr(2)Cu(3)O(7) (Ln=Gd, Dy, Ho)

Partial substitution of Cu in the chain by the phosphate ion stabilizes LnSr(2)Cu(3)O(7) (Ln = Gd, Dy or Ho) in the 123 structure. The LnSr(2)Cu(2.8)(PO4)(0.2)O-y derivatives exhibit incommensurately modulated structures. The holmium oxy-phosphate derivative has been rendered superconducting by the partial substitution of Ho by Ca.

Optical phase conjugation by two-wave mixing in iron-doped lithium niobate

A novel technique to generate forward phase conjugate wave by two-wave mixing (TWM) in photorefractive iron-doped lithium niobate crystal has been demonstrated. An optical beam from a positive transparency was forward phase conjugated by TWM technique. The experimental scheme was then extended to a specific interferometric application.

Surface resistance and residual losses of Ag?doped YBa2Cu3O7?? thin films on sapphire

High?quality Ag?doped YBa2Cu3O7?? thin films have been grown by laser ablation on R?plane ?1102? sapphire without any buffer layer. Thin films have been found to be highly c?axis oriented with Tc=90 K, transition width ?T?1 K, and transport Jc=1.2×106 A?cm?2 at 77 K in self?field conditions. The microwave surface resistance of these films measured on patterned microstrip resonators has been found to be 530 ?? at 10 GHz at 77 K which is the lowest reported on unbuffered sapphire. Improved in?plane epitaxy and reduced reaction rate between the substrate and the film caused due to Ag in the film are believed to be responsible for this greatly improved microwave surface resistance. © 1995 American Institute of Physics.

Synthesis and properties of rare earth doped lamp phosphors

Red, blue and green emitting lamp phosphors such as EU(3+) doped Y2O3 (red phosphor), EU(2+) doped Ba0.64Al12O18.64, BaMgAl10O17 and BaMg2Al16O27 (blue phosphors) and Ce0.67Tb0.33MgAl11O19 and Eu2+, Mn2+ doped BaMgAl10O17 (green phosphors) have been prepared by the combustion of the corresponding metal nitrates (oxidizer) and oxalyl dihydrazide/urea/carbohydrazide (fuel) mixtures at 400 degrees-500 degrees C within 5 min. The formation of these phosphors has been confirmed by their characteristic powder X-ray diffraction patterns and fluorescence spectra. The phosphors showed characteristic emission bands at 611 nm (red emission), 430-450 nm (blue emission) and 515-540 nm (green emission). The fine-particle nature of the combustion derived phosphors has been investigated using powder density, particle size and BET surface area measurements.

High-Q, Ag-doped 123 resonator on unbuffered sapphire substrate

The microwave performance of an Ag-doped YBa2Cu3O7-x, thin-film X-band microstrip resonator on unbuffered sapphire substrate is reported. Q-values of 2400 and 1200 have been obtained al 15R and 77K, respectively, which correspond to R(s) values of 330 mu Omega and 680 mu Omega.

Liquid phase epitaxial growth of pure and doped GaSb layers: morphological evolution and native defects

Undoped and Te-doped gallium antimonide (GaSb) layers have been grown on GaSb bulk substrates by the liquid phase epitaxial technique from Ga-rich and Sb-rich melts. The nucleation morphology of the grown layers has been studied as a function of growth temperature and substrate orientation. MOS structures have been fabricated on the epilayers to evaluate the native defect content in the grown layers from the C-V characteristics. Layers grown from antimony rich melts always exhibit p-type conductivity. In contrast, a type conversion from p- to n- was observed in layers grown from gallium rich melts below 400 degrees C. The electron mobility of undoped n-type layers grown from Ga-rich melts and tellurium doped layers grown from Sb- and Ga-rich solutions has been evaluated.