Influence of deviation from stoichiometry on the photoluminescence in CdTe doped with indium


Autoria(s): Gurumurthy, S; Rao, KSRK; Sreedhar, AK; Bhat, HL; Sundersheshu, B; Bagai, RK; Kumaran, V
Data(s)

01/11/1994

Resumo

Low temperature photoluminescence of vacuum and cadmium annealed CdTe:In is reported here. A new peak at similar to 1.14 eV related to transitions from the conduction band to an acceptor involving a tellurium vacancy has been observed.

Formato

application/pdf

Identificador

http://eprints.iisc.ernet.in/36548/1/INFLUENCE.pdf

Gurumurthy, S and Rao, KSRK and Sreedhar, AK and Bhat, HL and Sundersheshu, B and Bagai, RK and Kumaran, V (1994) Influence of deviation from stoichiometry on the photoluminescence in CdTe doped with indium. In: Bulletin of materials science, 17 (6). 1057 -1064 .

Publicador

Indian Academy of Sciences

Relação

http://www.springerlink.com/content/w7227430754706m2/

http://eprints.iisc.ernet.in/36548/

Palavras-Chave #Physics
Tipo

Journal Article

PeerReviewed