An Electrowetting Model For Rough Surfaces Under Low Voltage

Electrowetting is one of the most effective methods to enhance wettability. A significant change of contact angle for the liquid droplet can result from the surface microstructures and the external electric field, without altering the chemical composition of the system. During the electrowetting process on a rough surface, the droplet exhibits a sharp transition from the Cassie-Baxter to the Wenzel regime at a low critical voltage. In this paper, a theoretical model for electrowetting is put forth to describe the dynamic electrical control of the wetting behavior at the low voltage, considering the surface topography. The theoretical results are found to be in good agreement with the existing experimental results. (c) Koninklijke Brill NV, Leiden, 2008.

Plastic deformation in Ce-based bulk metallic glasses during depth-sensing indentation

The deformation behavior and the effect of the loading rate on the plastic deformation features in (numbers indicate at.%) Ce60Al15Cu10Ni15, Ce65Al10Cu10Ni10Nb5, Ce68Al10Cu20Nb2, and Ce70Al10Cu20 bulk metallic glasses (BMGs) were investigated through nanoindentation. The load-displacement (P-h) curves of Ce65Al10Cu10Ni10Nb5, Ce68Al10Cu2, and Ce70Al10Cu20 BMGs exhibited a continuous plastic deformation at all studied loading rate. Whereas, the P-h curves of Ce60Al15Cu10Ni15 BMG showed a quite unique feature, i.e. homogeneous plastic deformation at low loading rates, and a distinct serrated flow at high strain rates. Moreover, a creep deformation during the load holding segment was observed for the four Ce-based BMGs at room temperature. The mechanism for the appearance of the "anomalous" plastic deformation behavior in the Ce-based BMGs was discussed. (c) 2006 Elsevier B.V. All rights reserved.

Carrier concentration profiling in magnetic GaMnSb/GaSb investigated by electrochemistry capacitance-voltage profiler

Depth profiles of carrier concentrations in GaMnSb/GaSb are investigated by electrochemistry capacitance-voltage profiler and electrolyte of Tiron. The carrier concentration in GaMnSb/GaSb measured by this method is coincident with the results of Hall and X-ray diffraction measurements. It is indicated that most of the Mn atoms in GaMnSb take the site of Ga, play a role of acceptors, and provide shallow acceptor level(s).