995 resultados para Si (100) substrates
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A disponibilidade do Si pelo silicato de Ca poderá aumentar a formação de polifenóis, os quais tornariam possível a maior persistência dos resíduos culturais em superfície. Com esse intuito, procurou-se avaliar a ação do silicato e do calcário na decomposição de diferentes resíduos culturais e a liberação de nutrientes para o desenvolvimento do feijoeiro. O delineamento experimental empregado foi o de blocos casualizados em esquema fatorial 3 x 5, com quatro repetições. Os tratamentos foram constituídos de três espécies de plantas de cobertura: milheto (Pennisetum americanum), braquiária (Brachiaria brizantha) e guandu-anão (Cajanus cajan L.) e cinco níveis proporcionais de silicato de cálcio: 0, 25, 50, 75 e 100 %, aplicado nas doses crescentes de 0, 2,31, 4,63, 6,96 e 9,27 g/vaso, respectivamente, balanceadas com carbonato de cálcio e carbonato de magnésio, de forma que as quantidades de Ca e Mg em cada tratamento fossem iguais, calculados para atingir uma saturação por bases no solo de 70 %. A aplicação de silicato de Ca não interferiu na decomposição do resíduo cultural de braquiária, guandu e milheto. O teor de Mg disponível no solo foi reduzido pela aplicação de silicato de Ca, o que induz menor absorção pelas plantas de cobertura e eventual disponibilização após sua decomposição. O crescimento do feijoeiro foi favorecido pela aplicação de silicato de Ca, sendo as doses de 2,31 e 6,95 g/vaso de silicato com o resíduo cultural de braquiária os tratamentos que apresentaram maior eficiência.
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Dept. Electrònica
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In this paper we present the Raman scattering of self-assembled InSb dots grown on (001) oriented InP substrates. The samples were grown by pulsed molecular beam epitaxy mode. Two types of samples have been investigated. In one type the InSb dots were capped with 200 monolayers of InP; in the other type no capping was deposited after the InSb dot formation. We observe two peaks in the Raman spectra of the uncapped dot, while only one peak is observed in the Raman spectra of the capped dots. In the case of the uncapped dots the peaks are attributed to LO-like and TO-like vibration of completely relaxed InSb dots, in agreement with high resolution transmission electron microscopy photographs. The Raman spectra of the capped dot suggest a different strain state in the dot due to the capping layer.
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The correlation between the structural (average size and density) and optoelectronic properties [band gap and photoluminescence (PL)] of Si nanocrystals embedded in SiO2 is among the essential factors in understanding their emission mechanism. This correlation has been difficult to establish in the past due to the lack of reliable methods for measuring the size distribution of nanocrystals from electron microscopy, mainly because of the insufficient contrast between Si and SiO2. With this aim, we have recently developed a successful method for imaging Si nanocrystals in SiO2 matrices. This is done by using high-resolution electron microscopy in conjunction with conventional electron microscopy in dark field conditions. Then, by varying the time of annealing in a large time scale we have been able to track the nucleation, pure growth, and ripening stages of the nanocrystal population. The nucleation and pure growth stages are almost completed after a few minutes of annealing time at 1100°C in N2 and afterward the ensemble undergoes an asymptotic ripening process. In contrast, the PL intensity steadily increases and reaches saturation after 3-4 h of annealing at 1100°C. Forming gas postannealing considerably enhances the PL intensity but only for samples annealed previously in less time than that needed for PL saturation. The effects of forming gas are reversible and do not modify the spectral shape of the PL emission. The PL intensity shows at all times an inverse correlation with the amount of Pb paramagnetic centers at the Si-SiO2 nanocrystal-matrix interfaces, which have been measured by electron spin resonance. Consequently, the Pb centers or other centers associated with them are interfacial nonradiative channels for recombination and the emission yield largely depends on the interface passivation. We have correlated as well the average size of the nanocrystals with their optical band gap and PL emission energy. The band gap and emission energy shift to the blue as the nanocrystal size shrinks, in agreement with models based on quantum confinement. As a main result, we have found that the Stokes shift is independent of the average size of nanocrystals and has a constant value of 0.26±0.03 eV, which is almost twice the energy of the Si¿O vibration. This finding suggests that among the possible channels for radiative recombination, the dominant one for Si nanocrystals embedded in SiO2 is a fundamental transition spatially located at the Si¿SiO2 interface with the assistance of a local Si-O vibration.
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Epitaxial Fe/MgO heterostructures have been grown on Si(001) by a combination of sputtering and laser ablation deposition techniques. The growth of MgO on Si(001) is mainly determined by the nature of the interface, with large lattice mismatch and the presence of an amorphous layer of unclear origin. Reflection high energy electron diffraction patterns of this MgO buffer layer are characteristic of an epitaxial, but disordered, structure. The structural quality of subsequent Fe and MgO layers continuously improves due to the better lattice match and the burial of defects. A weak uniaxial in-plane magnetic anisotropy is found superimposed on the expected cubic biaxial anisotropy. This additional anisotropy, of interfacial nature and often found in Fe/MgO and Fe/MgO/GaAs(001) systems, is less intense here due to the poorer MgO/Si interface quality compared with that of other systems. From the evolution of the anisotropy field with film thickness, magnetic anisotropy is also found to depend on the crystal quality. Kerr measurements of a Fe/MgO multilayered structure grown on Si show two different switching fields, suggesting magnetic coupling of two of the three Fe layers. Nevertheless, due to the little sensitivity to the bottom Fe film, independent switching of the three layers cannot be ruled out.
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Rapport de synthese :Comparaison des effets vasculaires et tubulaires rénaux de plusieurs antagonistes des récepteurs de |'angiotensine II en combinaison avec un diurétique thiazidique chez l'humainObjectif : Le but de ce travail était d'investiguer si les antagonistes des récepteurs AT1 de l'angiotensine II (ARA2) entraînent un blocage équivalent des récepteurs au niveau vasculaire et au niveau rénal, en particulier lorsque le système rénine- angiotensine est stimulé par l'administration d'un diurétique thiazidique. Méthode : trente volontaires masculins en bonne santé ont participé à cette étude randomisée, contrôlée, en simple insu. Nous avons mesuré les variations de pression artérielle, d'hémodynamique rénale ainsi que la réponse tubulaire rénale à une perfusion d'angiotensine II 3ng/kg/min administrée sur 1 heure. Ceci avant traitement puis après sept jours d'administration, 24 heures après la dernière dose de médicament. Nous avons comparé l'irbésartan 300 mg seul ou en association avec 12.5 ou 25 mg d'hydrochlorothiazide. (irbésartan 300/12.5 ; irbésartan 300/25). Nous avons également comparé les effets de l'irbésartan 300/25 au losartan 100 mg, au valsartan 160 mg ainsi qu'à l'olmésartan 20 mg, tous administrés avec 25 mg d'hydrochlorothiazide. Chaque participant a été randomisé pour recevoir 2 traitements de 7 jours espacés d'une période d'une semaine sans traitement. Résultats: La réponse de la pression artérielle à |'angiotensine II exogène était bloquée >90% avec l'irbésartan 300 mg seul ou en association avec le diurétique. Il en était de même avec l'olmésartan 20/25. Par contre le blocage n'était que de 60% environ dans les groupes valsartan 160/25 et losartan 100/25. Au niveau rénal, |'angiotensine II exogène réduisait le flux plasmatique rénal de 36% en pré- traitement. Dans les groupes recevant l'irbésartan 300 mg et l'olmésartan 20 mg associés à l'hydrochlorothiazide 25 mg, la vasoconstriction rénale était bloquée presque entièrement alors qu'el|e ne |'était que partiellement avec le valsartan 160/25 et le losartan 100/25 (34 et 45%, respectivement). En pré-traitement, au niveau tubulaire, l'angiotensine II exogène réduisait le volume urinaire de 84% et l'excrétion urinaire de sodium de 65 %. Les effets tubulaires n'étaient que partiellement bloqués par l'administration d'ARA2. Conclusion: Ces résultats démontrent que les ARA; aux doses maximales recommandées ne bloquent pas aussi efficacement les récepteurs ATI au niveau tubulaire qu'au niveau vasculaire. Cette observation pourrait constituer une justification à l'hypothèse selon laquelle des doses plus importantes d'ARA2 seraient nécessaires afin d'obtenir une meilleure protection d'organe. De plus, nos résultats confirment qu'i| y a d'importantes différences entre les ARA2, relatives à leur capacité d'induire un blocage prolongé sur 24 heures des récepteurs AT1 au niveau vasculaire et tubulaire.
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We investigate the spreading of 4He droplets on alkali-metal surfaces at zero temperature, within the frame of finite range density-functional theory. The equilibrium configurations of several 4HeN clusters and their asymptotic trend with increasing particle number N, which can be traced to the wetting behavior of the quantum fluid, are examined for nanoscopic droplets. We discuss the size effects inferring that the asymptotic properties of large droplets correspond to those of the prewetting film.
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Bureau of Nutrition and Health Promotion part of the Iowa Department of Public Health produces of weekly newsletter about the Iowa WIC Program for the State of Iowa citizen.
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Numérisation partielle de reliure