Differential geometry and design coupling in MDO

The notion of coupling within a design, particularly within the context of Multidisciplinary Design Optimization (MDO), is much used but ill-defined. There are many different ways of measuring design coupling, but these measures vary in both their conceptions of what design coupling is and how such coupling may be calculated. Within the differential geometry framework which we have previously developed for MDO systems, we put forth our own design coupling metric for consideration. Our metric is not commensurate with similar types of coupling metrics, but we show that it both provides a helpful geo- metric interpretation of coupling (and uncoupledness in particular) and exhibits greater generality and potential for analysis than those similar metrics. Furthermore, we discuss how the metric might be profitably extended to time-varying problems and show how the metric's measure of coupling can be applied to multi-objective optimization problems (in unconstrained optimization and in MDO). © 2013 by the American Institute of Aeronautics and Astronautics, Inc. All rights reserved.

Acoustic analogy in swirling mean flow applied to predict rotor trailing-edge noise

The present study aims at accounting for swirling mean flow effects on rotor trailing-edge noise. Indeed, the mean flow in between the rotor and the stator of the fan or of a compressor stage is highly swirling. The extension of Ffowcs-Williams & Hawkings' acoustic analogy in a medium at rest with moving surfaces and of Goldstein's acoustic analogy in a circular duct with uniform mean flow to a swirling mean flow in an annular duct is introduced. It is first applied to tonal noise. In most cases, the swirl modifies the pressure distribution downstream of the fan. In several configurations, when the swirl is rather close to a solid body swirl, it is often sufficient to apply a simple Doppler effect correction when predicting the duct modes in uniform mean flow in order to predict accurately the noise radiated with swirl. However, in other realistic configurations, the swirling mean-flow effect cannot be addressed using this simple Doppler effect correction. Second, a rotor trailing-edge noise model accounting for both the effects of the annular duct and the swirling mean flow is developed and applied to a realistic fan rotor with different swirling and sheared mean flows (and as a result different associated blade stagger angles). The benchmark cases are built from the Boeing 18-inch Fan Rig Broadband Noise Test. In all cases the swirling mean flow has an effect. In some cases the a simple Doppler effect may address it, but, in other realistic configurations our acoustic analogy with swirl is needed. © 2012 by the authors. Published by the American Institute of Aeronautics and Astronautics, Inc.

Demonstration of radio-over-fibre transmission of broadband MIMO over multimode fibre using mode division multiplexing

A novel method for sending MIMO wireless signals to remote antenna units over a single multimode fibre is proposed. MIMO streams are sent via different fibre modes using mode division multiplexing. Combined channel measurements of 2km MMF and a typical indoor radio environment show in principle a 2×2 MIMO link at carrier frequencies up to 6GHz. © 2012 Optical Society of America.

Digital radio distribution system over multiple cabling types

This paper demonstrates a novel digital radio distribution system able to transmit not only over optical fibres and coaxial cables but also over twisted pair cables. The digitised RF signal is compressed for maximum transmission efficiency in a way that allows for integral self-learning algorithms to be introduced for multi-service applications. © 2013 IEEE.

MIMO System capacity improvements using radio-over-fibre distributed antenna system technology

The effect of antenna separation in a 3×3 MIMO system using RoF DAS technology is investigated. Larger antenna separation is found to improve the throughput due to reduced channel correlation and improved SNR. © OSA/OFC/NFOEC 2011.

Experimental evaluation of layout designs for 3 × 3 MIMO-enabled radio-over-fiber distributed antenna systems

This paper experimentally demonstrates that, for two representative indoor distributed antenna system (DAS) scenarios, existing radio-over-fiber (RoF) DAS installations can enhance the capacity advantages of broadband 3 × 3 multiple-input-multiple-output (MIMO) radio services without requiring additional fibers or multiplexing schemes. This is true for both single-and multiple-user cases with a single base station and multiple base stations. First, a theoretical example is used to illustrate that there is a negligible improvement in signal-to-noise ratio (SNR) when using a MIMO DAS with all N spatial streams replicated at N RAUs, compared with a MIMO DAS with only one of the N streams replicated at each RAU for N ≤ 4. It is then experimentally confirmed that a 3 × 3 MIMO DAS offers improved capacity and throughput compared with a 3 × 3 MIMO collocated antenna system (CAS) for the single-user case in two typical indoor DAS scenarios, i.e., one with significant line-of-sight (LOS) propagation and the other with entirely non-line-of-sight (NLOS) propagation. The improvement in capacity is 3.2% and 4.1%, respectively. Then, experimental channel measurements confirm that there is a negligible capacity increase in the 3 × 3 configuration with three spatial streams per antenna unit over the 3 × 3 configuration with a single spatial stream per antenna unit. The former layout is observed to provide an increase of ∼1% in the median channel capacity in both the single-and multiple-user scenarios. With 20 users and three base stations, a MIMO DAS using the latter layout offers median aggregate capacities of 259 and 233 bit/s/Hz for the LOS and NLOS scenarios, respectively. It is concluded that DAS installations can further enhance the capacity offered to multiple users by multiple 3 × 3 MIMO-enabled base stations. Further, designing future DAS systems to support broadband 3 × 3 MIMO systems may not require significant upgrades to existing installations for small numbers of spatial streams. © 2013 IEEE.

Wave propagation in a slowly-varying duct with mean vortical swirling flow

The propagation of unsteady disturbances in a slowlyvarying cylindrical duct carrying mean swirling flow is investigated using a multiple-scales technique. This is applicable to turbomachinery flow behind a rotor stage when the swirl and axial velocities are of the same order. The presence of mean vorticity couples acoustic and vorticity equations which produces an eigenvalue problem that is not self-adjoint unlike that for irrotational mean flow. In order to determine the amplitude variation along the duct, an adjoint solution for the coupled system of equations is derived. The solution breaks down where a mode changes from cut on to cut off. In this region the amplitude is governed by a form of Airy's equation, and the effect of swirl is to introduce a small shift in the origin of the Airy function away from the turning-point location. The variation of axial wavenumber and amplitude along the duct is calculated. In hard-walled ducts mean swirl is shown to produce much larger amplitude variation along the duct compared with a nonswirling flow. Mean swirl also has a large effect in ducts with finite-impedance walls which differs depending on whether modes are co-rotating with the swirl or counter rotating. © 2001 by A.J. Cooper, Published by the American Institute of Aeronautics and Astronautics, Inc.

High rate deposition of microcrystalline silicon films by high-pressure radio frequency plasma enhanced chemical vapor deposition (PECVD)

Hydrogenated microcrystalline silicon (mu c-Si:H) thin films were prepared by high-pressure radio-frequency (13.56 MHz) plasma enhanced chemical vapor deposition (rf-PECVD) with a screened plasma. The deposition rate and crystallinity varying with the deposition pressure, rf power, hydrogen dilution ratio and electrodes distance were systematically studied. By optimizing the deposition parameters the device quality mu c-Si:H films have been achieved with a high deposition rate of 7.8 angstrom/s at a high pressure. The V-oc of 560 mV and the FF of 0.70 have been achieved for a single-junction mu c-Si:H p-i-n solar cell at a deposition rate of 7.8 angstrom/s.

Photoluminescence and transmission spectra of nanocrystalline GaAs1-xSbx embedded in silica films

The composite films of the nanocrystalline GaAs1-xSbx-SiO2 have been successfully deposited on glass and GaSb substrates by radio frequency magnetron co-sputtering. The 10K photoluminescence (PL) properties of the nanocrystalline GaAs1-xSbx indicated that the PL peaks of the GaAs1-xSbx nanocrystals follow the quantum confinement model very closely. Optical transmittance spectra showed that there is a large blue shift of optical absorption edge in nanocrystalline GaAs1-xSbx-SiO2 composite films, as compared with that of the corresponding bulk semiconductor, which is due to the quantum confinement effect.

A study on the realization of radio frequency energy AC/DC charge pump based on MOS FET

This paper presents a novel efficient charge pump composed of low Vth metal-oxide-semiconductor (MOS) field effect transistors (FET) in the course of realizing radio frequency (RF) energy AC/DC conversion. The novel structure eliminates those defects caused by typical Schottky-diode charge pumps, which are dependent on specific processes and inconsistent in quality between different product batches. Our analyses indicate that an easy-fabricated, stable and efficient RF energy AC/DC charge pump can be conveniently implemented through reasonably configuring the MOS transistor aspect ratio, and other design parameters such as capacitance, multiplying stages to meet various demands on performance.

Interface effect on emission properties of Er-doped Si nanoclusters embedded in SiO2 prepared by magnetron sputtering

Er-doped Si nanoclusters embedded in SiO2 (NCSO) films were prepared by radio frequency magnetron sputtering on either silicon or quartz substrates. A 1.16 mu m (1.08 eV) photoluminescence (PL) peak was observed from an Er-doped NCSO film deposited on a Si substrate. This 1.16 mu m peak is attributed to misfit dislocations at the NCSO/Si interface. The emission properties of the 1.16 mu m peak and its correlation with the Er3+ emission (1.54 mu m) have been studied in detail. The observed behavior suggests that the excitation mechanism of the 1.16 mu m PL is in a fashion similar to that shown for Er-doped Si nanoclusters embedded in a SiO2 matrix. (C) 2006 American Institute of Physics.

Influence of growth parameters of frequency-radio plasma nitrogen source on extending emission wavelengths from 1.31 mu m to 1.55 mu m GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy

High (42.5%) indium content GaInNAs/GaAs quantum wells with room temperature emission wavelength from 1.3 mu m to 1.5 mu m range were successfully grown by Radio Frequency Plasma Nitrogen source assisted Molecular Beam Epitaxy. The growth parameters of plasma power and N-2 How rate were optimized systematically to improve the material quality. Photoluminescence and transmission electron microscopy measurements showed that the optical and crystal quality of the 1.54 mu m GaInNAs/GaAs QWs was kept as comparable as that in 1.31 mu m.

P-doped p-type ZnO films deposited on Si substrate by radio-frequency magnetron sputtering

P-doped ZnO films were deposited on n-Si substrate by radio-frequency magnetron sputtering. Hall measurements revealed that the films annealed in situ at 750 degrees C in an oxygen ambient at a pressure of 1.3x10(-3)-3.9x10(-3) Pa showed p-type behavior with a hole concentration of 2.7x10(16)-2.2x10(17) cm(-3), a mobility of 4-13 cm(2)/V s, and a resistivity of 10.4-19.3 Omega cm. Films annealed at 750 degrees C in a vacuum or in oxygen ambient at higher pressures (5.2x10(-3) and 6.5x10(-3) Pa) showed n-type behavior. Additionally, the p-ZnO/n-Si heterojunction showed a diodelike I-V characteristic. Our results indicate that P-doped p-type ZnO films can be obtained by annealing in oxygen ambient at very low pressures. (c) 2006 American Institute of Physics.

Fabrication and properties of Sb-doped ZnO thin films grown by radio frequency (RF) magnetron sputtering

Sb-doped and undoped ZnO thin films were deposited on Si (100) substrates by radio frequency (RF) magnetron sputtering. X-ray diffraction (XRD) and scanning electron microscopy (SEM) analyses revealed that all the films had polycrystalline wurtzite structure and c-axis preferred orientation. Room temperature Hall measurements showed that the as-grown films were n-type and conducting (rho similar to 1-10 Omega cm). Annealing in a nitrogen ambient at 400 degrees C for 1 h made both samples highly resistive (rho > 10(3) Omega cm). Increasing the annealing temperature up to 800 C, the resistivity of the ttndoped ZnO film decreased gradually, but it increased for the Sb-doped ZnO film. In the end, the Sb-doped ZnO film annealed at 800 C became semi-insulating with a resistivity of 10(4)Omega cm. In addition, the effects of annealing treatment and Sb-doping on the structural and electrical properties are discussed. (c) 2006 Elsevier B.V. All rights reserved.

Dependence of intrinsic defects in ZnO films on oxygen fraction studied by positron annihilation

Defects in ZnO films grown by radio-frequency reactive magnetron sputtering under variable ratios between oxygen and argon gas have been investigated by using the monoenergetic positron beam technique. The dominate intrinsic defects in these ZnO samples are O vacancies (V-O) and Zn interstitials (Zn-i) when the oxygen fraction in the O-2/Ar feed gas does not exceed 70% in the processing chamber. On the other hand, zinc vacancies are preponderant in the ZnO Elms fabricated in richer oxygen environment. The concentration of zinc vacancies increases with the increasing (2) fraction. For the oxygen fraction 85%, the number of zinc vacancies that could trap positrons will be smaller. It is speculated that some unknown defects could shield zinc vacancies. The concentration of zinc vacancies in the ZnO films varies with the oxygen fraction in the growth chamber, which is in agreement with the results of photoluminescence spectra.