Photoluminescence and transmission spectra of nanocrystalline GaAs1-xSbx embedded in silica films
Data(s) |
2005
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Resumo |
The composite films of the nanocrystalline GaAs1-xSbx-SiO2 have been successfully deposited on glass and GaSb substrates by radio frequency magnetron co-sputtering. The 10K photoluminescence (PL) properties of the nanocrystalline GaAs1-xSbx indicated that the PL peaks of the GaAs1-xSbx nanocrystals follow the quantum confinement model very closely. Optical transmittance spectra showed that there is a large blue shift of optical absorption edge in nanocrystalline GaAs1-xSbx-SiO2 composite films, as compared with that of the corresponding bulk semiconductor, which is due to the quantum confinement effect. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Liu, FM; Zhang, LD; Li, GH .Photoluminescence and transmission spectra of nanocrystalline GaAs1-xSbx embedded in silica films ,CHINESE PHYSICS,OCT 2005,14 (10):2145-2148 |
Palavras-Chave | #半导体物理 #nanocrystalline GaAs1-xSbx |
Tipo |
期刊论文 |