Optimum Magnetic Circuit Configurations for Permanent Magnet Aerospace Generators

In the design of high-speed low-power electrical generators for unmanned aircraft and spacecraft, maximization of specific output (power/weight) is of prime importance. Several magnetic circuit configurations (radial-field, axial-field, flux-squeezing, homopolar) have been proposed, and in this paper the relative merits of these configurations are subjected to a quantitative investigation over the speed range 10 000–100000 rev/min and power range 250 W-10 kW. The advantages of incorporating new high energy-density magnetic materials are described. Part I deals with establishing an equivalent circuit for permanent-magnet generators. For each configuration the equivalent circuit parameters are related to the physical dimensions of the generator components and an optimization procedure produces a minimum volume design at discrete output powers and operating speeds. The technique is illustrated by a quantitative comparison of the specific outputs of conventional radial-field generators with samarium cobalt and alnico magnets. In Part II the specific outputs of conventional, flux-squeezing, and claw-rotor magnetic circuit configurations are compared. The flux-squeezing configuration is shown to produce the highest specific output for small sizes whereas the conventional configuration is best at large sizes. For all sizes the claw-rotor configuration is significantly inferior. In Part III the power densities available from axial-field and flux-switching magnetic circuit configurations are maximized, over the power range 0.25-10 kW and speed range 10 000–100000 rpm, and compared to the results of Parts I & II. For the axial-field configuration the power density is always less than that of the conventional and flux-squeezing radial-field configurations. For the flux-switching generator, which is able to withstand relatively high mechanical forces in the rotor, the power density is again inferior to the radial-field types, but the difference is less apparent for small (low power, high speed) generator sizes. From the combined results it can be concluded that the flux-squeezing and conventional radial-field magnetic circuit configurations yield designs with minimum volume over the power and speed ranges considered. © 1985, IEEE. All rights reserved.

Complementary metal-oxide-semiconductor-compatible and self-aligned catalyst formation for carbon nanotube synthesis and interconnect fabrication

We have for the first time developed a self-aligned metal catalyst formation process using fully CMOS (complementary metal-oxide-semiconductor) compatible materials and techniques, for the synthesis of aligned carbon nanotubes (CNTs). By employing an electrically conductive cobalt disilicide (CoSi 2) layer as the starting material, a reactive ion etch (RIE) treatment and a hydrogen reduction step are used to transform the CoSi 2 surface into cobalt (Co) nanoparticles that are active to catalyze aligned CNT growth. Ohmic contacts between the conductive substrate and the CNTs are obtained. The process developed in this study can be applied to form metal nanoparticles in regions that cannot be patterned using conventional catalyst deposition methods, for example at the bottom of deep holes or on vertical surfaces. This catalyst formation method is crucially important for the fabrication of vertical and horizontal interconnect devices based on CNTs. © 2012 American Institute of Physics.

Cold-gas chemical vapor deposition to identify the key precursor for rapidly growing vertically-aligned single-wall and few-wall carbon nanotubes from pyrolyzed ethanol

Vertically-aligned carbon nanotubes (VA-CNTs) were rapidly grown from ethanol and their chemistry has been studied using a "cold-gas" chemical vapor deposition (CVD) method. Ethanol vapor was preheated in a furnace, cooled down and then flowed over cobalt catalysts upon ribbon-shaped substrates at 800 °C, while keeping the gas unheated. CNTs were obtained from ethanol on a sub-micrometer scale without preheating, but on a millimeter scale with preheating at 1000 °C. Acetylene was predicted to be the direct precursor by gas chromatography and gas-phase kinetic simulation, and actually led to millimeter-tall VA-CNTs without preheating when fed with hydrogen and water. There was, however a difference in CNT structure, i.e. mainly few-wall tubes from pyrolyzed ethanol and mainly single-wall tubes for unheated acetylene, and the by-products from ethanol pyrolysis possibly caused this difference. The "cold-gas" CVD, in which the gas-phase and catalytic reactions are separately controlled, allowed us to further understand CNT growth. © 2012 Elsevier Ltd. All rights reserved.

Superhydrophobic carbon nanotube electrode produces a near-symmetrical alternating current from photosynthetic protein-based photoelectrochemical cells

The construction of protein-based photoelectrochemical cells that produce a variety of alternating currents in response to discontinuous illumination is reported. The photovoltaic component is a protein complex from the purple photosynthetic bacterium Rhodobacter sphaeroides which catalyses photochemical charge separation with a high quantum yield. Photoelectrochemical cells formed from this protein, a mobile redox mediator and a counter electrode formed from cobalt disilicide, titanium nitride, platinum, or multi-walled carbon nanotubes (MWCNT) generate a direct current during continuous illumination and an alternating current with different characteristics during discontinuous illumination. In particular, the use of superhydrophobic MWCNT as the back electrode results in a near symmetrical forward and reverse current upon light on and light off, respectively. The symmetry of the AC output of these cells is correlated with the wettability of the counter electrode. Potential applications of a hybrid biological/synthetic solar cell capable of generating an approximately symmetrical alternating current are discussed. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Effect of catalyst pretreatment on chirality-selective growth of single-walled carbon nanotubes

We show that catalyst pretreatment conditions can have a profound effect on the chiral distribution in single-walled carbon nanotube chemical vapor deposition. Using a SiO2-supported cobalt model catalyst and pretreatment in NH3, we obtain a comparably narrowed chiral distribution with a downshifted tube diameter range, independent of the hydrocarbon source. Our findings demonstrate that the state of the catalyst at the point of carbon nanotube nucleation is of fundamental importance for chiral control, thus identifying the pretreatment atmosphere as a key parameter for control of diameter and chirality distributions. © 2014 American Chemical Society.

Co doping enhanced giant magnetocaloric effect in Mn1-xCoxAs films epitaxied on GaAs (001)

A giant magnetocaloric effect was found in series of Mn1-xCoxAs films epitaxied on GaAs (001). The maximum magnetic entropy change caused by a magnetic field of 4 T is as large as 25 J/kg K around room temperature, which is about twice the value of pure MnAs film. The observed small thermal hysteresis is more suitable for practical application. Growing of layered Mn1-xCoxAs films with Co concentration changing gradually may draw layered active magnetic regenerator refrigerators closer to practical application. Our experimental result may provide the possibility for the combination of magnetocaloric effect and microelectronic circuitry.

Organic light-emitting diodes with magnesium doped CuPc as an efficient electron injection layer

Bright organic electroluminescent devices are developed using a metal-doped organic layer intervening between the cathode and the emitting layer. The typical device structure is a glass substrate/indium-tin oxide (ITO)/copper phthalocyanine (CuPc)/NN'-bis-(1-naphthl)-diphenyl-1,1'-biphenyl-4,4'-diamine (NPB)/Tris(8-quinolinolato) aluminum(Alq(3))/Mg-doped CuPc/Ag. At a driving voltage of 11 V, the device with a layer of Mg-doped CuPc (1:2 in weight) shows a brightness of 4312 cd/m(2) and a current efficiency of 2.52 cd/A, while the reference device exhibits 514 cd/m(2) and 1.25 cd/A.

Structural and magnetic properties of insulating Zn1-xCoxO thin films

Cobalt-doped ZnO (Zn1-xCoxO) thin films were fabricated by reactive magnetron cosputtering. The processing conditions were carefully designed to avoid the occurrence of Co precipitations. The films are c-axis oriented, and the solubility limit of Co in ZnO is less than 17%, determined by x-ray diffraction. X-ray photoemission spectroscopy measurements show Co ions have a chemical valance of 2+. In this paper, hysteresis loops were clearly observed for Zn1-xCoxO films at room temperature. The coercive field, as well as saturation magnetization per Co atom, decreases with increasing Co content, within the range of 0.07

Improved performance in organic light emitting diodes with a mixed electron donor-acceptor film involved in hole injection

Organic light emitting diodes using a mixed layer of electron acceptor 3, 4, 9, 10 perylenetetracarboxylic dianhydride and electron donor copper phthalocyanine (PTCDA:CuPc) on indium tin oxide (ITO) anodes were fabricated. The device properties were found to be strongly dependent on the thickness of the PTCDA:CuPc film: both the power efficiency and the driving voltage of the device were optimized with a thickness of PTCDA:CuPc ranging from 10 to 20 nm. As compared to the conventional ITO/CuPc hole injection structure, the ITO/PTCDA:CuPc hole injection structure could remarkably enhance both the luminance and the power efficiencies of devices. A mechanism of static-induced, very efficient hole-electron pairs generation in mixed PTCDA:CuPc films was proposed to explain the experimental phenomena. The structural and optical properties of PTCDA:CuPc film were examined as well. (c) 2007 American Institute of Physics.

Organic light emitting diodes with an organic acceptor/donor interface involved in hole injection

Organic light emitting diodes with an interface of organic acceptor 3-, 4-, 9-, 10-perylenetetracarboxylic dianhydride (PTCDA) and donor copper phthalocyanine (CuPc) involved in hole injection are fabricated. As compared to the conventional device using a 5 nm CuPc hole injection layer, the device using an interface of 10 nm PTCDA and 5 rim CuPc layers shows much lower operating voltage with an increase of about 46% in the maximum power efficiency. The enhanced device performance is attributed to the efficient hole generation at the PTCDA/CuPc interface. This study provides a new way of designing hole injection.

Enhanced photoresponse from the ordered microstructure of naphthalocyanine-carbon nanotube composite film

Naphthalocyanine-sensitized multi-walled carbon nanotube (NaPc-MWNT) composites have been synthesized through the pi-stacking between naphthalocyanine (NaPc) and carbon nanotubes. The resultant nanocomposites were characterized with a scanning electron microscope (SEM), a transmission electron microscope (TEM), and by UV - vis absorption and photocurrent spectra. The long-range ordering was observed in the NaPc - MWNT composites by using a TEM. The enhancement in the absorption intensity and the broadening of the absorption wavelength observed in the composite films, which were due to the attachment of NaPc on the MWNT surface, is discussed based on the measured UV - vis absorption spectra. Furthermore, the photoconductivity of the poly( 3-hexylthiophene)(PAT6) - NaPc - MWNT composite film was found to increase remarkably in the visible region and broaden towards the red regions. These new phenomena were ascribed to the larger donor/acceptor (D/A) interface and the formation of a biconsecutive D/A network structure, as discussed in consideration of the photoinduced charge transfer between PAT6 and NaPc - MWNT.

High-field ferromagnetic resonance in fine particles

We investigate high-field ferromagnetic resonance of superparamagnetic particles with uniaxial anisotropy, In this case, since the field is large enough to saturate the magnetization, the thermal orientational fluctuations of the magnetic moment of the particle are negligible. Thus, we derive the dynamic susceptibility of the system on the basis of an independent particle model. High-field ferromagnetic resonance has been performed on fine cobalt particles, The analysis of the spectra obtained at different frequencies allows us to estimate the effective magnetic anisotropy, the gyromagnetic ratio, and the transverse relaxation time. (C) 1998 Elsevier Science B.V. All rights reserved.

铁氰化钴修饰电极的制备、表征及电催化性能的研究

多核过渡金属铁氰化物修饰电极的研究在电催化、电色显示器件、能量存储、离子识别等方面具有重要的意义。本文采用了电化学的循环伏安法（CV）、旋转圆盘电极技术（RDE）、傅立叶变换红外光谱法（FTIR）和扫描电子显微镜技术（SEM），系统研究了一类铁氰化物—铁氰化钴修饰玻碳（CoHCF／GC）电极的制备方法及其对神经递质多巴胺（DA）的电催化作用以及修饰溶液中一种阳离子表面活性剂十六烷基三甲基溴化铵（CTAB）的加入对所制备的CoHCF／GC电极的电化学性能和电催化性能的影响。主要内容和结论如下：1．改进了CoHCF／GC电极的制备方法。新方法具有简单易行、不受修饰物浓度干扰、修饰时间短、修饰量易于控制等优点，且制备的CoHCF粒径小、结构明确、电化学性能稳定。2．研究了CoHCF／GC电极对DA氧化的电催化性能。采用RDE测定了CoHCF／GC电极对DA的电催化氧化的动力学参数。结果表明用新方法制备的修饰电极对DA氧化有更好的电催化性能。3．研究了在修饰溶液中加入临界浓度的CTAB对所制备的CoHCF／GC电极的影响。CV的研究结果表明，CTAB的加入，基本不影响CoHCF／GC的氧化还原峰峰电位，却使其氧化还原峰峰电流明显增大，且使所制得CoHCF／GC电极对DA氧化表现出不同的电催化行为。FTIR研究表明，CTAB不吸附在电极表面，不改变COHCF膜的化学组成和结构。SEM研究结果表明，CTAB的加入使所制备的CoHCF膜长得更快，更厚，使CoHCF粒子长得更大。因此，可得出结论为CoHCF粒子的大小是影响其对DA不同的电催化行为的主要因素。4．用RDE技术测定了有、无CTAB情况下制备的CoHCF／GC电极对DA的电催化反应的动力学参数。结果表明，有CTAB时制备的CoHCF／GC电极对DA的表观动力学常数kΓ比没有时的要大。

过渡金属烯烃聚合催化剂的研究

本论文合成、表征了一系列以铁、钻、镍、铬为中心离子的非茂过渡金属配合物，研究了这些配合物催化烯烃聚合的反应行为。主要工作和结论如下：1，合成、表征了一系列苯环邻、对位含取代基的毗咤双亚胺铁、钻乙烯聚合催化剂。在改性甲基铝氧烷（MMAO）的活化下，这些配合物可高效催化乙烯聚合。在优化条件下，研究了邻、对位取代基电子效应对催化活性的影响。对于铁催化剂来说，不仅邻位取代基体积的大小对乙烯的插入及所得聚合物的分子量有微调作用，对位取代基的电子效应也对催化活性和聚合物分子量影响也很大。2．我们在单核毗咤双亚胺铁催化剂的基础上，设计合成了环状三核铁催化剂。这种环状三核铁催化剂的活性中心位于环状结构的内部。在有机铝的活化下，可高效催化乙烯聚合。新的催化剂展示出更长的催化剂寿命，与单核铁催化剂相比，性能上得到非常大的改善，不但能防止催化剂分子间的失活，还可有效抑制链转移反应的发生。3．在MMAO的活化下，吡啶双亚胺铁可催化（甲基）丙烯酸酷的聚合。催化MMA的聚合时，得到低分子量、窄分布的间规PMMA；催化BMA的聚合时，活性很高，得到无规、低分子量的PBMA；催化丙烯酸酷聚合时，不仅活性高，而且易得到高分子量的聚合物。催化活性、聚合物产率、立构规整度、分子量及分子量分布都会受到反应参数、催化剂结构及助催化剂的性质的影响。4．合成、表征了一系列带有不同取代基的份二亚胺镍催化剂。在MMAO的活化下，这些镍配合物可以高效催化乙烯聚合。不仅邻位取代基体积的大小对乙烯的插入及所得聚合物的分子量有微调作用，对位取代基的电子效应也对催化活性、聚合物分子量及其支化度也有很大的影响。5．合成、表征了一系列新型二苯硫醚双亚胺铬催化剂。在MMAO的活化下，这些铬配合物可常温催化乙烯聚合，生成具有宽分布的聚乙烯。配体结构以及聚合条件对催化剂的活性及所得聚合物的性质有很大影响。

INTERFACIAL REACTIONS IN THE CO/SI/GAAS AND SI/CO/GAAS SYSTEMS

The interfacial reactions between thin films of cobalt and silicon and (100)-oriented GaAs substrates in two configurations, Co/Si/GaAs and Si/Co/GaAs, were studied using a variety of techniques including Auger electron spectroscopy, x-ray diffraction, and transmission electron microscopy. The annealing conditions were 200, 300, 400, 600-degrees-C for 30 min, and rapid thermal annealing for 15 s. It was found that Si layer in the Co/Si/GaAs system acts as a barrier at the interface between Co and GaAs when annealed up to 600-degrees-C. The interfacial reaction between Co and Si is faster than that between Co and GaAs in the system of Si/Co/GaAs. The sequence of compound formation for the two metallizations studied (Co/Si/GaAs and Si/Co/GaAs) depends strongly on the sample configuration as well as the layer thickness of Si and Co (Co/Si atomic ratio). From our results, it is promising to utilize Co/Si/GaAs multilayer film structure to make a CoSi2/GaAs contact, and this CoSi2 may offer an alternative to the commonly used W silicides as improved gate metallurgies in self-aligned metal-semiconductor field effect transistor (MESFET) technologies.