Structural and magnetic properties of insulating Zn1-xCoxO thin films
Data(s) |
2004
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Resumo |
Cobalt-doped ZnO (Zn1-xCoxO) thin films were fabricated by reactive magnetron cosputtering. The processing conditions were carefully designed to avoid the occurrence of Co precipitations. The films are c-axis oriented, and the solubility limit of Co in ZnO is less than 17%, determined by x-ray diffraction. X-ray photoemission spectroscopy measurements show Co ions have a chemical valance of 2+. In this paper, hysteresis loops were clearly observed for Zn1-xCoxO films at room temperature. The coercive field, as well as saturation magnetization per Co atom, decreases with increasing Co content, within the range of 0.07<x<0.17. Most intriguing, the Zn1-xCoxO films are nonconductive as x is no more than 17%. Our results clearly demonstrate that ferromagnetism can be realized in Zn1-xCoxO without carrier incorporation. (C) 2004 American Institute of Physics. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Yin, Z; Chen, NF; Chai, CL; Yang, F .Structural and magnetic properties of insulating Zn1-xCoxO thin films ,JOURNAL OF APPLIED PHYSICS,NOV 1 2004,96 (9):5093-5096 |
Palavras-Chave | #半导体材料 #DOPED ZNO FILMS |
Tipo |
期刊论文 |