Guia de padrão de interface do SIGI.

Uso de objetos de interação. Orientação para utilização de elementos gráficos. Disposição dos elementos gráficos. Espaçamentos dos elementos gráficos.

Aplicação da JNI - Java Native Interface - na construção da ferramenta ServCLIPS.

Linguagem de programação Java. Java native interface (JNI). Ferramenta ServCLIPS:um exemplo de uso da JNI.

Cálculo de área acessível por solvente utilizando SURFV - definição de interface intramolecular pelo SMS.

Definição de superfície acessível por solvente. Cálculo de AS. Utilização de SURFV para cálculo da área da AS e identificação de interface. Discussão e trabalhos futuros.

Interface de usuário: uma avaliação do projetista.

2005

Study of adsorption of methylene blue and new methylene blue in liquid-solid interface by slab optical waveguide spectroscopy

A slab optical waveguide (SOWG) has been used for study of adsorption of both methylene blue (MB) and new methylene blue (NMB) in liquid-solid interface. Adsorption characteristics of MB and NMB on both bare SOWG and silanized SOWG by octadecyltrichlorosilane (ODS) were compared. Effect of pH on adsorption on MB and NMB was investigated. Binding rate constant analysis showed that both MB and NMB on bare SOWG demonstrates larger association constants than those on ODS-SOWG. Interactions of NIB and NMB on bare SOWG and ODS-SOWG were analyzed by molecular mechanics calculation method. The binding energy change was in the following order: ENMB-bare > EMB-bare > ENMB-ODS > EMB-ODS. (c) 2004 Elsevier B.V. All rights reserved.

Fluxo de gases-traco de efeito estufa na interface solo/atmosfera em solos de cerrado (2001).

A contribuicao da agricultura para as emissoes de gases de efeito estufa tem sido discutida em varios estudos. No que se refere as emissoes de CH4 (metano) e N2O (oxido nitroso), tem sido demostrado que a contribuicao dela esta em torno de 65% e 90% do total das emissoes antropogenicas respectivamente. O metano e produzido pela decomposicao anaerobica da materia organica no solo, queima de residuos e fermentacao de ruminantes. O cosumo desse gas ocorre pela oxidacao de radicais OH na troposfera e por oxidacao microbiologica no solo. O oxido nitroso e igualmente distribuido na troposfera e apresenta um tempo de resistencia bem maior do que o metano. Esse gas e produzido nos solos por processos biologicos e não-bioloicos, a partir de tranformacoes microbianas de nitrogenio inorganico nos solos, sendo a denitrifigacao e a nitrifigacao, os processos microbiologicos que mais contribuem para a emissao de N2O. A conversao de floresta para o uso agricola tem sido indicado como causador do aumento no fluxos de N2O, no entanto, neste estudo, em areas de Cerrado, emissoes muito reduzidas foram medidas. A capacidade de solos da Regiao do Cerrado consumir CH4 foi demostrada neste estudo. Embora tenha sido observada uma variacao sazonal dos fluxos, em nenhum periodo foi medida emissao desse gas, mesmo durante o periodo chuvoso. A possível reducao nas taxas de oxidacao de metano como resultado do aumento de fontes nitrogenadas em areas cultivadas, indicada por trabalhos anteriores, não e verificada pelo estudo.

Interface of chip-based capillary electrophoresis-inductively coupled plasma-atomic emission spectrometry (CE-ICP-AES)

An interface of chip-based capillary electrophoresis (CE)-inductively coupled plasma-atomic emission spectrometry (ICP-AES) that is based on cross-flow nebulization has been developed. A polydimethylsiloxane (PDMS) CE-chip with conventional cross channel layout was used. A stainless steel tube was placed orthogonal to the exit of the CE separation channel for cross flow nebulization. A supplementary flow of buffer solution at the channel exit was used to improve nebulization efficiency. Two capillaries were inserted into the CE chip near the inlet of the separation channel for sample and buffer solution injection. Syringe pumps were used to manipulate the flow rate and flow direction of the sample, buffer, and supplementary buffer solution. Peak broadening due to the shape (bulb and tube-shaped) and size of the spray chambers was studied. The smaller tube-shaped spray chamber was used because of smaller peak broadening effect due to aerosol transport. The nebulization and transport efficiency of the CE-ICP interface was approximately 10%. Ba2+ and Mg2+ ions were eluted from the CE-chip within 30 s. Resolution of the Ba2+ and Mg2+ peaks was 0.7 using the chip-based CE-ICP-AES system.

Qualitative modelling of unknown interface behaviour

M. H. Lee, and S. M. Garrett, Qualitative modelling of unknown interface behaviour, International Journal of Human Computer Studies, Vol. 53, No. 4, pp. 493-515, 2000

Copper phthalocyanine on InSb(111)A?interface bonding, growth mode and energy band alignment

Copper phthalocyanine on InSb(111)A?interface bonding, growth mode and energy band alignment, D.A. Evans, H.J. Steiner, S. Evans, R. Middleton, T.S. Jones, S. Park, T.U. Kampen, D.R.T. Zahn, G. Cabailh and I.T. McGovern, J. Phys.: Condens. Matter, 15, S2729?S2740, (2003)

Asymptotic behaviour of the elastic solution near the tip of a crack situated at a nonideal interface

Mishuris, G; Kuhn, G., (2001) 'Asymptotic behaviour of the elastic solution near the tip of a crack situated at a nonideal interface', Zeitschrift f?r Angewandte Mathematik und Mechanik 81(12) pp.811-826 RAE2008

BitBox!: A case study interface for teaching real-time adaptive music composition for video games

Real-time adaptive music is now well-established as a popular medium, largely through its use in video game soundtracks. Commercial packages, such as fmod, make freely available the underlying technical methods for use in educational contexts, making adaptive music technologies accessible to students. Writing adaptive music, however, presents a significant learning challenge, not least because it requires a different mode of thought, and tutor and learner may have few mutual points of connection in discovering and understanding the musical drivers, relationships and structures in these works. This article discusses the creation of ‘BitBox!’, a gestural music interface designed to deconstruct and explain the component elements of adaptive composition through interactive play. The interface was displayed at the Dare Protoplay games exposition in Dundee in August 2014. The initial proof-of- concept study proved successful, suggesting possible refinements in design and a broader range of applications.

Complicações microbiológicas na interface implante-pilar

Projeto de Pós-Graduação/Dissertação apresentado à Universidade Fernando Pessoa como parte dos requisitos para obtenção do grau de Mestre em Medicina Dentária

Extending snBench to Support a Graphical Programming Interface for a Sensor Network Tasking Language (STEP)

The purpose of this project is the creation of a graphical "programming" interface for a sensor network tasking language called STEP. The graphical interface allows the user to specify a program execution graphically from an extensible pallet of functionalities and save the results as a properly formatted STEP file. Moreover, the software is able to load a file in STEP format and convert it into the corresponding graphical representation. During both phases a type-checker is running on the background to ensure that both the graphical representation and the STEP file are syntactically correct. This project has been motivated by the Sensorium project at Boston University. In this technical report we present the basic features of the software, the process that has been followed during the design and implementation. Finally, we describe the approach used to test and validate our software.

Atomic layer deposition of interface control layers for the fabrication of III/V MOS devices

The continued advancement of metal oxide semiconductor field effect transistor (MOSFET) technology has shifted the focus from Si/SiO2 transistors towards high-κ/III-V transistors for high performance, faster devices. This has been necessary due to the limitations associated with the scaling of the SiO2 thickness below ~1 nm and the associated increased leakage current due to direct electron tunnelling through the gate oxide. The use of these materials exhibiting lower effective charge carrier mass in conjunction with the use of a high-κ gate oxide allows for the continuation of device scaling and increases in the associated MOSFET device performance. The high-κ/III-V interface is a critical challenge to the integration of high-κ dielectrics on III-V channels. The interfacial chemistry of the high-κ/III-V system is more complex than Si, due to the nature of the multitude of potential native oxide chemistries at the surface with the resultant interfacial layer showing poor electrical insulating properties when high-κ dielectrics are deposited directly on these oxides. It is necessary to ensure that a good quality interface is formed in order to reduce leakage and interface state defect density to maximise channel mobility and reduce variability and power dissipation. In this work, the ALD growth of aluminium oxide (Al2O3) and hafnium oxide (HfO2) after various surface pre-treatments was carried out, with the aim of improving the high-κ/III-V interface by reducing the Dit – the density of interface defects caused by imperfections such as dangling bonds, dimers and other unsatisfied bonds at the interfaces of materials. A brief investigation was performed into the structural and electrical properties of Al2O3 films deposited on In0.53Ga0.47As at 200 and 300oC via a novel amidinate precursor. Samples were determined to experience a severe nucleation delay when deposited directly on native oxides, leading to diminished functionality as a gate insulator due to largely reduced growth per cycle. Aluminium oxide MOS capacitors were prepared by ALD and the electrical characteristics of GaAs, In0.53Ga0.47As and InP capacitors which had been exposed to pre-pulse treatments from triethyl gallium and trimethyl indium were examined, to determine if self-cleaning reactions similar to those of trimethyl aluminium occur for other alkyl precursors. An improved C-V characteristic was observed for GaAs devices indicating an improved interface possibly indicating an improvement of the surface upon pre-pulsing with TEG, conversely degraded electrical characteristics observed for In0.53Ga0.47As and InP MOS devices after pre-treatment with triethyl gallium and trimethyl indium respectively. The electrical characteristics of Al2O3/In0.53Ga0.47As MOS capacitors after in-situ H2/Ar plasma treatment or in-situ ammonium sulphide passivation were investigated and estimates of interface Dit calculated. The use of plasma reduced the amount of interface defects as evidenced in the improved C-V characteristics. Samples treated with ammonium sulphide in the ALD chamber were found to display no significant improvement of the high-κ/III-V interface. HfO2 MOS capacitors were fabricated using two different precursors comparing the industry standard hafnium chloride process with deposition from amide precursors incorporating a ~1nm interface control layer of aluminium oxide and the structural and electrical properties investigated. Capacitors furnished from the chloride process exhibited lower hysteresis and improved C-V characteristics as compared to that of hafnium dioxide grown from an amide precursor, an indication that no etching of the film takes place using the chloride precursor in conjunction with a 1nm interlayer. Optimisation of the amide process was carried out and scaled samples electrically characterised in order to determine if reduced bilayer structures display improved electrical characteristics. Samples were determined to exhibit good electrical characteristics with a low midgap Dit indicative of an unpinned Fermi level

Probing the Electrochemical Interface by In Situ Infrared Spectroscopy

info:eu-repo/semantics/published