Study on the oxygen concentration reduction in heavily Sb-doped silicon

It was determined that oxygen concentration in heavily Sb-doped silicon was about 40% lower than that in the lightly doped Czochralski grown silicon and decreased with increasing content of Sb by means of coincident elastic recoil detection analysis. Through thermodynamic calculation, the oxygen loss by evaporation from the free surface of melt is only due to the formation of SiO, and Sb2O3 evaporation can be neglected. The basic reason for oxygen concentration reduction in heavily Sb-doped CZSi was that oxygen solubility decreased when element Sb with larger radius doped degenerately into silicon crystal. (C) 1999 Elsevier Science B.V. All rights reserved.

Relationship between deep-level centers and stoichiometry in semi-insulating gallium arsenide

Experimental results have shown the fact that the deep-level centers in semi-insulating GaAs decrease with the improvement in stoichiometry. The electrical resistivity doubles when the concentration of EL2 centers decreases to a half. The microgravity-growth experiments also show that improved crystal stoichiometry results in a decrease of deep-level centers. (C) 1998 American Institute of Physics. [S0021-8979(98)04921-4].

High-concentration hydrogen in unintentionally doped GaN

We use nuclear reaction analysis to study hydrogen in unintentionally doped GaN, and high-concentration hydrogen, nearly 10(21) cm(-3), is detected. Accordingly, a broad but intense infrared absorption zone with a peak at 2962 cm(-1) is reported, which is tentatively assigned to the stretch mode of NH: Ga complex. The complex is assumed to be one candidate answering for background electrons in unintentionally doped GaN. (C) 1998 Elsevier Science B.V. All rights reserved.

In-situ Boron-doped Low-stress LPCVD Polysilicon for Micromechanical Disk Resonator

Polycrystalline silicon (polysilicon) has been used as an important structural material for microelectro-mechnical systems (MEMS) because of its compatibility with standard integrated circuit (IC) processes. As the structural layer of micromechanical high resonance frequency (high-f) and high quality factor (high-Q) disk resonators, the low residual stress and low resistivity are desired for the polysilicon thin films. In the present work, we investigate the effect of deposition and annealing conditions on the residual stress and resistivity for in-situ deposited low pressure chemical vapor deposition (LPCVD) polysilicon films. Low residual stress (-100 MPa) was achieved in in-situ boron-doped polysilicon films deposited at 570 degrees C and annealed at 1000 degrees C for 4 hr. The as-deposited amorphous polysilicon films were crystallized by the rapid thermal annealing and have the (111)-preferred orientation, the low tensile residual stress is expected for this annealed film, the detailed description on this work will be reported soon. The controllable residual stress and resistivity make these films suitable for high-Q and bigh-f micro-mechanical disk resonators.

Photoluminescence and Raman scattering correlated study of boron-doped silicon nanowires

Boron-doped (B-doped) silicon nanowires (SiNWS) have been prepared and characterized by Raman scattering and photoluminescence (PL). B-doped SiNWS were grown by plasma enhanced chemical vapor deposition (PECVD), using diborane (B2H6) as the dopant gas. Raman spectra show a band at 480cm(-1),which is attributed to amorphous silicon. Photoluminescence at room temperature exhibits three distinct emission peaks at 1.34ev, 1.42ev, 1.47ev. Possible reason for these is suggested.

Electron concentration dependence of exciton localization and freeze-out at local potential fluctuations in InN films

InN films with electron concentration ranging from n similar to 10(17) to 10(20) cm(-3) grown by metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) were investigated by variable-temperature photoluminescence and absorption measurements. The energy positions of absorption edge as well as photoluminescence peak of these InN samples with electron concentration above 10(18) cm(-3) show a distinct S-shape temperature dependence. With a model of potential fluctuations caused by electron-impurity interactions, the behavior can be quantitatively explained in terms of exciton freeze-out in local potential minima at sufficiently low temperatures, followed by thermal redistribution of the localized excitons when the band gap shrinks with increasing temperature. The exciton localization energy sigma (loc) is found to follow the n (5/12) power relation, which testifies to the observed strong localization effects in InN with high electron concentrations.

Raman scattering study of vibrational modes and hole concentration in GaxMn1-xSb

The Raman scattering study of vibrational modes and hole concentration in a ferromagnetic semiconductor Ga1-xMnxSb grown by Mn ion implantation, deposition and post-annealing has been presented. The experiments are performed both in implanted and unimplanted regions before and after etching the samples. The Raman spectra measured from the unimplanted region show only GaSb-like phonon modes. On the other hand, the spectra measured from the implanted region show additional phonon modes approximately at 115, 152, 269, 437 and 659 cm(-1). The experimental results demonstrate that the extra modes are associated with surface defects, crystal disorder and blackish layer that is formed due to Mn ion implantation, deposition and annealing processes. Furthermore, we have determined the hole concentration as a function of laser probing position by modeling the Raman spectra using coupled mode theory. The contributions of GaSb-like phonon modes and coupled LO-phonon plasmon mode are taken into consideration in the model. The hole-concentration-dependent CLOPM is resolved in the spectra measured from the implanted and nearby implanted regions. The hole concentrations determined by Raman scattering are found to be in good agreement with those measured by the electrochemical capacitance-voltage technique.

Experimental Investigation on Propane Hydrate Dissociation by High Concentration Methanol and Ethylene Glycol Solution Injection

The dissociation behaviors of propane hydrate by high concentration alcohols inhibitors injection were investigated. Methanol (30.0, 60.1, 80.2, and 99.5 wt %) and ethylene glycol (30.0, 60.1, 69.8, 80.2, and 99.5 wt %) solution were injected, respectively, as alcohols inhibitors in 3.5 L transparent reactor. It is shown that the average dissociation rates of propane hydrate injecting methanol and ethylene glycol solution are 0.02059-0.04535 and 0.0302-0.0606 mol.min(-1).L-1, respectively. The average dissociation rates increase with the mass concentration increase of alcohols solution, and it is the biggest when 99.5 wt % ethylene glycol solution was injected. The presence of alcohols accelerates gas hydrate dissociation and reduces the total need of external energy to dissociate the hydrates. Density differences act as driving force, causing the acceleration effects of ethylene glycol on dissociation behaviors of propane hydrate are better than that of methanol with the same injecting flux and mass concentration.

Effect of dopant concentration on photocatalytic activity of TiO2 film doped by Mn non-uniformly

The thin films of TiO2 doped by Mn non-uniformly were prepared by sol-gel method under process control. In our preceding study, we investigated in detail, the effect of doping mode on the photocatalytic activity of TiO2 films showing that Mn non-uniform doping can greatly enhance the activity. In this study we looked at the effect of doping concentration on the photocatalytic activity of the TiO2 films. In this paper, the thin films were characterized by UV-vis spectrophotometer and electrochemical workstation. The activity of the photocatalyst was also evaluated by photocatalytic degradation rate of aqueous methyl orange under UV radiation. The results illustrate that the TiO2 thin film doped by Mn non-uniformly at the optimal dopant concentration (0.7 at %) is of the highest activity, and on the contrary, the activity of those doped uniformly is decreased. As a comparison, in 80 min, the degradation rate of methyl orange is 62 %, 12 % and 34 % for Mn non-uniform doping film (0.7 at %), the uniform doping film (0.7 at %) and pure titanium dioxide film, respectively. We have seen that, for the doping and the pure TiO2 films, the stronger signals of open circuit potential and transient photocurrent, the better photocatalytic activity. We also discusse the effect of dopant concentration on the photocatalytic activity of the TiO2 films in terms of effective separation of the photon-generated carriers in the semiconductor. (C) Versita Warsaw and Springer-Verlag Berlin Heidelberg. All rights reserved.

Modeling and optimizing of high-concentration erbium-doped fiber amplifiers with consideration of ion-clusters

Starting from the modeling of isolated ions and ion-clusters, a closed form rate and power evolution equations for high-concentration erbium-doped fiber amplifiers are constructed. Based on the equations, the effects of the fraction of ion-clusters in total ions and the number of ions per cluster on the performance of high-concentration erbium-doped fiber amplifiers are analyzed numerically. The results show that the presence of the ion-clusters deteriorates amplifier performance, such as the signal power, signal gain, the threshold pump power for zero gain, saturated signal gain, and the maximum gain efficiency, etc. The optimum fiber length or other parameters should be modified with the ion-clusters being taken into account for the amplifiers to achieve a better performance. (c) 2007 Elsevier B.V. All rights reserved.

Formation and Properties of a Novel Heavy-Metal Chalcogenide Glass Doped with a High Dysprosium Concentration

A novel heavy-metal chalcogenide glass doped with a high dysprosium ion (Dy(3+)) concentration was prepared by the well-established melt-quenching technique from high-purity elements. The results show that when Cadmium (Cd) is introduced into chalcogenide glass, the concentration of Dy(3+) ions doped in GeGaCdS glasses is markedly increased, the thermodynamic performance improves, and the difference between T(g) and T(x) is >120 degrees C. The Vickers microhardness is also modified greatly, about 245 kgf/mm(2). The optical spectra indicate that all absorption and emission bands of Dy(3+) are clearly observed and red-shifted with increasing Dy(3+) concentration.

EXCIMER-LASER DOPING OF SPIN-ON DOPANT IN SILICON

Solid films containing phosphorus impurities were formed on p-type silicon wafer surface by traditional spin-on of commercially available dopants. The doping process is accomplished by irradiating the sample with a 308 nm XeCl pulsed excimer laser. Shallow junctions with a high concentration of doped impurities were obtained. The measured impurity profile was ''box-like'', and is very suitable for use in VLSI devices. The characteristics of the doping profile against laser fluence (energy density) and number of laser pulses were studied. From these results, it is found that the sheet resistance decreases with the laser fluence above a certain threshold, but it saturates as the energy density is further increased. The junction depth increases with the number of pulses and the laser energy density. The results suggest that this simple spin-on dopant pre-deposition technique can be used to obtain a well controlled doping profile similar to the technique using chemical vapor in pulsed laser doping process.