Alternative method for the metrological characterization of spur gears in the sub-millimeter range using optical equipment

The aim of this work is to develop a software that allows the inspection of spur gear manufactured in the sub-millimeter range. The measurements are made using a digital optical machine and using an analysis proprietary software implemented in Matlab®, which is able to handle images, captured using the digital optical machine. The software allows to evaluate the profile and pitch deviations as establish in the ISO/TR 10064-1:1992 standard

Optical and structural properties of InAlN/GaN Bragg reflectors examined by transmission electron microscopy and electron energy loss spectroscopy

Molecular beam epitaxy growth of ten-period lattice-matched InAlN/GaN distributed Bragg reflectors (DBRs) with peak reflectivity centered around 400nm is reported including optical and transmission electron microscopy (TEM) measurements [1]. Good periodicity heterostructures with crack-free surfaces were confirmed, but, also a significant residual optical absorption below the bandgap was measured. The TEM characterization ascribes the origin of this problem to polymorfism and planar defects in the GaN layers and to the existence of an In-rich layer at the InAlN/GaN interfaces. In this work, several TEM based techniques have been combined.

Top-Hat HELLISH-VCSOA for optical amplification and wavelength conversion for 0.85 to 1.3ìm operation

The Top-Hat hot electron light emission and lasing in semiconductor heterostructure (HELLISH)-vertical cavity semiconductor optical amplifier (VCSOA) is a modified version of a HELLISH-VCSOA device. It has a shorter p-channel and longer n-channel. The device studied in this work consists of a simple GaAs p-i-n junction, containing 11 Ga0.35In0.65 N0.02As0.08/GaAs multiple quantum wells in its intrinsic region; the active region is enclosed between six pairs of GaAs/AlAs top distributed Bragg reflector (DBR) mirrors and 20.5 pairs of AlAs/GaAs bottom DBR mirrors. The operation of the device is based on longitudinal current transport parallel to the layers of the GaAs p-n junction. The device is characterised through I-V-L and by spectral photoluminescence, electroluminescence and electro-photoluminescence measurements. An amplification of about 25 dB is observed at applied voltages of around V = 88 V.

Thermal and mechanical effects of different excitation modes based on low frequency laser modulation in optical hyperthermia

The low frequency modulation of the laser source (menor que30KHz) allows the generation of a pulsed signal that intermittently excites the gold nanorods. The temperature curves obtained for different frequencies and duty cycles of modulation but with equal average power and identical laser parameters, show that the thermal behavior in continuous wave and modulation modes is the same. However, the cell death experiments suggest that the percentage of death is higher in the cases of modulation. This observation allows us to conclude that there are other effects in addition to temperature that contribute to the cellular death. The mechanical effects like sound or pressure waves are expected to be generated from thermal expansion of gold nanorods. In order to study the behavior and magnitude of these processes we have developed a measure device based on ultrasound piezoelectric receivers (25KHz) and a lock-in amplifier that is able to detect the sound waves generated in samples of gold nanorods during laser irradiation providing us a voltage result proportional to the pressure signal. The first results show that the pressure measurements are directly proportional to the concentration of gold nanorods and the laser power, therefore, our present work is focused on determine the real influence of these effects in the cell death process.

Intermediate Band to Conduction Band optical absorption in ZnTe:O

ZnTe doped with high concentrations of oxygen has been proposed in previous works as intermediate band (IB) material for photovoltaic applications. The existence of extra optical transitions related to the presence of an IB has already been demonstrated in this material and it has been possible to measure the absorption coefficient of the transitions from the valence band (VB) to the IB. In this work we present the first measurement of the absorption coefficient associated to transitions from the IB to the conduction band (CB) in ZnTe:O. The samples used are 4 ?m thick ZnTe layers with or without O in a concentration ~ 1019 cm-3, which have been grown on semi-insulating GaAs substrates by molecular beam epitaxy (MBE). The IB-CB absorption coefficient peaks for photon energies ~ 0.4 eV. It is extracted from reflectance and transmittance spectra measured using Fourier Transform Infrared (FTIR) spectroscopy. Under typical FTIR measurement conditions (low light intensity, broadband spectrum) the absorption coefficient in IB-to-CB transitions reaches 700 cm-1. This is much weaker than the one observed for VB-IB absorption. This result is consistent with the fact that the IB is expected to be nearly empty of electrons under equilibrium conditions in ZnTe(:O). The absorption for VB to IB transitions is also observed in the same samples through reflectance measurements performed in the visible range using a monochromator. These measurements are compared with the quantum efficiency (QE) from solar cells fabricated under similar conditions.

Experimental measurements of the scattered-light polarization from different liquid flows

An experimental system designed to measure very low optical powers, of the order of a few picowatts, is presented. Its main aid is to detect the polarisation state of scattered light from a fluid flow, in different angular directions with respect to the longitudinal axis of the flow. A laser beam incident linearly polarized crosses the fluid flow orthogonally. The scattered light is detected by means of a photodetector situated behind a lineal polarizer whose orientation can be rotated. The outgoing electrical signal is amplified by means of a Mode-lockin amplifier and is digitally processed.

Non-destructive optical characterisation of fruits with time-resolved reflectance spectroscopy.

Increasing attention is being paid to the possible development of non-invasive tests for the assessment of the quality of fruits We propose a novel non-destructive method for the measurement of the internal optical properties of fruits and vegetables by means of time resolved reflectance spectroscopy in the visible and NIR range. A fully automated instrumentation for time-resolved reflectance measurements was developed It is based on mode-locked laser sources and electronics for time-correlated single photon counting, and provides a time-resolution of 120-160 ps The system was used to probe the optical properties of several species and varieties of fruits and vegetables in the red and NIR range (650-1000 nm). In most fruits, the absorption line shape is dominated by the absorption peak of water, centred around 970 nm Generally, the absorption spectra also show the spectral features typical of chlorophyll, with maximum at 675 nm In particular, for what concerns apples, variations in peak intensity are observed depending on the variety, the degree of ripeness as well as the position on the apple. For all the species and varieties considered, the transport scattering coefficient decreases progressively upon increasing the wavelength.

Non-destructive optical characterization of fruits in the red and near infrared.

Increasing attention is being paid to the possible development of non-invasive tests for the assessment of the quality of Fruits. We propose a novel non-destructive method for the measurement of the internal optical properties of fruits and vegetables by means of lime-resolved reflectance spectroscopy in the visible and NIR range. A Fully automated instrumentation for time-resolved reflectance measurements was developed. It is based on mode-locked laser sources and electronics for time-correlated single photon counting, and provides a time-resolution of 120-160 ps. The system was used to probe the optical properties of several species and varieties of Fruits and vegetables in the red and NIR range (650-1000 nm). In most Fruits, the absorption line shape is dominated by the absorption peak of water, centred around 970 nm. Generally, the absorption spectra also show the spectral features typical of chlorophyll, with maximum at 675 nm. In particular, for what concerns apples, variations in peak intensity are observed depending on the variety, the degree of ripeness as well as the position on the apple. For all the species and varieties considered, the transport scattering coefficient decreases progressively upon increasing the wavelength.

FK concentrator outdoor measurements

The FK is a two-stage optical concentrator for CPV, composed by a Fresnel lens working as POE and a refractive element working as SOE. Both elements perform Köhler integration, for uniform irradiance purposes. The FK has demonstrated that compares very well with other Fresnel-based concentrator optics. Recent on-sun measurements carried out on an FK mono-module prototype have already shown outstanding results, achieving electrical efficiencies over 34%. Further optimization of optical design together with application of AR coating on SOE will predictably lead to efficiencies over 35%.

Multiplexing QKD systems in Conventional Optical Networks

Current QKD designs try to keep the quantum channel as error free as possible by using a separate physical medium for this purpose. In the most common case, this means the exclusive use of an optical fiber for the quantum channel, precluding its use for any other purpose. In current optical networks, the fiber is the single most expensive element and this poses a major problem from a cost and availability point of view. Sharing the fiber is thus mandatory for the widespread adoption of QKD. The objective of this communication is to propose a general scheme and present some preliminary measurements of a metropolitan area network (MAN) designed to multiplex of the order of 64 addressable quantum channels and the associated QKD classical service signals on a single dark fibre. It uses as much existing components and infraestructure as possible in an attempt to simultaneously lower most of the practical barriers for the adoption of QKD.

Optical characterisation of semi-transparent PV modules for building integration

A complete characterisation of PV modules for building integration is needed in order to know their influence on the building’s global energy balance. Specifically, certain characteristic parameters should be obtained for each different PV module suitable for building integrated photovoltaics (BIPV), some by direct or indirect measurements at the laboratory, and others by monitoring the element performance mounted in real operating conditions. In the case of transparent building envelopes it is particularly important to perform an optical and thermal characterization of the PV modules that would be integrated in them. This paper addresses the optical characterization of some commercial thin-film PV modules having different degrees of transparency, suitable for building integration in façades. The approach is based on the measurement of the spectral UV/Vis/NIR reflectance and transmittance of the different considered samples, both at normal incidence and as a function of the angle of incidence. With the obtained results, the total and zoned UV, visible and NIR transmission and reflection values are calculated, enabling the correct characterization of the PV modules integrated in façades and the subsequent evaluation of their impact over the electrical, thermal and lighting performance in a building.

Influence of fabrication steps on optical and electrical properties of InN thin films

This paper reports on a case study of the impact of fabrication steps on InN material properties. We discuss the influence of annealing time and sequence of device processing steps. Photoluminescence (PL), surface morphology and electrical transport (electrical resistivity and low frequency noise) properties have been studied as responses to the adopted fabrication steps. Surface morphology has a strong correlation with annealing times, while sequences of fabrication steps do not appear to be influential. In contrast, the optical and electrical properties demonstrate correlation with both etching and thermal annealing. For all the studied samples PL peaks were in the vicinity of 0.7 eV, but the intensity and full width at half maximum (FWHM) demonstrate a dependence on the technological steps followed. Sheet resistance and electrical resistivity seem to be lower in the case of high defect introduction due to both etching and thermal treatments. The same effect is revealed through 1/f noise level measurements. A reduction of electrical resistivity is connected to an increase in 1/f noise level.

High-brightness all semiconductor laser at 1.57 µm for space-borne lidar measurements of atmospheric carbon dioxide: device design and analysis of requirements

The availability of suitable laser sources is one of the main challenges in future space missions for accurate measurement of atmospheric CO2. The main objective of the European project BRITESPACE is to demonstrate the feasibility of an all-semiconductor laser source to be used as a space-borne laser transmitter in an Integrated Path Differential Absorption (IPDA) lidar system. We present here the proposed transmitter and system architectures, the initial device design and the results of the simulations performed in order to estimate the source requirements in terms of power, beam quality, and spectral properties to achieve the required measurement accuracy. The laser transmitter is based on two InGaAsP/InP monolithic Master Oscillator Power Amplifiers (MOPAs), providing the ON and OFF wavelengths close to the selected absorption line around 1.57 µm. Each MOPA consists of a frequency stabilized Distributed Feedback (DFB) master oscillator, a modulator section, and a tapered semiconductor amplifier optimized to maximize the optical output power. The design of the space-compliant laser module includes the beam forming optics and the thermoelectric coolers.The proposed system replaces the conventional pulsed source with a modulated continuous wave source using the Random Modulation-Continuous Wave (RM-CW) approach, allowing the designed semiconductor MOPA to be applicable in such applications. The system requirements for obtaining a CO2 retrieval accuracy of 1 ppmv and a spatial resolution of less than 10 meters have been defined. Envelope estimated of the returns indicate that the average power needed is of a few watts and that the main noise source is the ambient noise.

Monolithic master oscillator power amplifier at 1.58 µm for lidar measurements

Nowadays the interest in high power semiconductor devices is growing for applications such as telemetry, lidar system or free space communications. Indeed semiconductor devices can be an alternative to solid state lasers because they are more compact and less power consuming. These characteristics are very important for constrained and/or low power supply environment such as airplanes or satellites. Lots of work has been done in the 800-1200 nm range for integrated and free space Master Oscillator Power Amplifier (MOPA) [1]-[3]. At 1.5 ?m, the only commercially available MOPA is from QPC [4]: the fibred output power is about 700 mW and the optical linewidth is 500 kHz. In this paper, we first report on the simulations we have done to determine the appropriate vertical structure and architecture for a good MOPA at 1.58 ?m (section II). Then we describe the fabrication of the devices (section III). Finally we report on the optical and electrical measurements we have done for various devices (section IV).

Optical properties of ZnMgO films grown by spray pyrolysis and their application to UV photodetection

This work presents a comprehensive optical characterization of Zn1−xMgxO thin films grown by spray pyrolysis (SP). Absorption measurements show the high potential of this technique to tune the bandgap from 3.30 to 4.11 eV by changing the Mg acetate content in the precursor solution, leading to a change of the Mg-content ranging from 0 up to 35%, as measured by transmission electron microscopy-energy dispersive x-ray spectroscopy. The optical emission of the films obtained by cathodoluminescence and photoluminescence spectroscopy shows a blue shift of the peak position from 3.26 to 3.89 eV with increasing Mg incorporation, with a clear excitonic contribution even at high Mg contents. The linewidth broadening of the absorption and emission spectra as well as the magnitude of the observed Stokes shift are found to significantly increase with the Mg content. This is shown to be related to both potential fluctuations induced by pure statistical alloy disorder and the presence of a tail of band states, the latter dominating for medium Mg contents. Finally, metal–semiconductor–metal photodiodes were fabricated showing a high sensitivity and a blue shift in the cut-off energy from 3.32 to 4.02 eV, i.e., down to 308 nm. The photodiodes present large UV/dark contrast ratios (102 − 107), indicating the viability of SP as a growth technique to fabricate low cost (Zn, Mg)O-based UV photodetectors reaching short wavelengths.