Top-Hat HELLISH-VCSOA for optical amplification and wavelength conversion for 0.85 to 1.3ìm operation
| Data(s) |
25/09/2012
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| Resumo |
The Top-Hat hot electron light emission and lasing in semiconductor heterostructure (HELLISH)-vertical cavity semiconductor optical amplifier (VCSOA) is a modified version of a HELLISH-VCSOA device. It has a shorter p-channel and longer n-channel. The device studied in this work consists of a simple GaAs p-i-n junction, containing 11 Ga0.35In0.65 N0.02As0.08/GaAs multiple quantum wells in its intrinsic region; the active region is enclosed between six pairs of GaAs/AlAs top distributed Bragg reflector (DBR) mirrors and 20.5 pairs of AlAs/GaAs bottom DBR mirrors. The operation of the device is based on longitudinal current transport parallel to the layers of the GaAs p-n junction. The device is characterised through I-V-L and by spectral photoluminescence, electroluminescence and electro-photoluminescence measurements. An amplification of about 25 dB is observed at applied voltages of around V = 88 V. |
| Formato |
application/pdf |
| Identificador | |
| Idioma(s) |
eng |
| Relação |
http://oa.upm.es/16340/1/INVE_MEM_2012_133298.pdf http://www.nanoscalereslett.com/content/7/1/525 info:eu-repo/semantics/altIdentifier/doi/10.1186/1556-276X-7-525 |
| Direitos |
http://creativecommons.org/licenses/by-nc-nd/3.0/es/ info:eu-repo/semantics/openAccess |
| Fonte |
Nanoscale Research Letters, ISSN 1931-7573, 2012-09-25, Vol. 7, No. 525 |
| Palavras-Chave | #Telecomunicaciones #Electrónica |
| Tipo |
info:eu-repo/semantics/article Artículo PeerReviewed |
