Interference in Multiprocessor Systems with Localized Memory Access Probabilities

Past studies of memory interference in multiprocessor systems have generally assumed that the references of each processor are uniformly distributed among the memory modules. In this paper we develop a model with local referencing, which reflects more closely the behavior of real-life programs. This model is analyzed using Markov chain techniques and expressions are derived for the multiprocessor performance. New expressions are also obtained for the performance in the traditional uniform reference model and are compared with other expressions-available in the literature. Results of a simulation study are given to show the accuracy of the expressions for both models.

An Area-Efficient Noise-Adaptive Neural Amplifier in 130 nm CMOS Technology

Chronic recording of neural signals is indispensable in designing efficient brain–machine interfaces and to elucidate human neurophysiology. The advent of multichannel micro-electrode arrays has driven the need for electronics to record neural signals from many neurons. The dynamic range of the system can vary over time due to change in electrode–neuron distance and background noise. We propose a neural amplifier in UMC 130 nm, 1P8M complementary metal–oxide–semiconductor (CMOS) technology. It can be biased adaptively from 200 nA to 2 $mu{rm A}$, modulating input referred noise from 9.92 $mu{rm V}$ to 3.9 $mu{rm V}$. We also describe a low noise design technique which minimizes the noise contribution of the load circuitry. Optimum sizing of the input transistors minimizes the accentuation of the input referred noise of the amplifier and obviates the need of large input capacitance. The amplifier achieves a noise efficiency factor of 2.58. The amplifier can pass signal from 5 Hz to 7 kHz and the bandwidth of the amplifier can be tuned for rejecting low field potentials (LFP) and power line interference. The amplifier achieves a mid-band voltage gain of 37 dB. In vitro experiments are performed to validate the applicability of the neural low noise amplifier in neural recording systems.

Band alignment studies in InN/p-Si(100) heterojunctions by x-ray photoelectron spectroscopy

The band offsets in InN/p-Si heterojunctions are determined by high resolution x-ray photoemission spectroscopy. The valence band of InN is found to be 1.39 eV below that of Si. Given the bandgap of 0.7 eV for InN, a type-III heterojunction with a conduction band offset of 1.81 eV was found. Agreement between the simulated and experimental data obtained from the heterojunction spectra was found to be excellent, establishing that the method of determination was accurate. The charge neutrality level (CNL) model provided a reasonable description of the band alignment of the InN/p-Si interface and a change in the interface dipole by 0.06 eV was observed for InN/p-Si interface.

Bounds on Probability of Error Due to Co-Channel Interference

Upper bounds on the probability of error due to co-channel interference are proposed in this correspondence. The bounds are easy to compute and can be fairly tight.

Digital Dead Time Logic and Protection Circuitry for PWM Voltage Source Converters

Power semiconductor devices have finite turn on and turn off delays that may not be perfectly matched. In a leg of a voltage source converter, the simultaneous turn on of one device and the turn off of the complementary device will cause a DC bus shoot through, if the turn off delay is larger than the turn on delay time. To avoid this situation it is common practice to blank the two complementary devices in a leg for a small duration of time while switching, which is called dead time. This paper proposes a logic circuit for digital implementation required to control the complementary devices of a leg independently and at the same time preventing cross conduction of devices in a leg, and while providing accurate and stable dead time. This implementation is based on the concept of finite state machines. This circuit can also block improper PWM pulses to semiconductor switches and filters small pulses notches below a threshold time width as the narrow pulses do not provide any significant contribution to average pole voltage, but leads to increased switching loss. This proposed dead time logic has been implemented in a CPLD and is implemented in a protection and delay card for 3- power converters.

Structure and Photocatalytic Activity of Ti 1- x M x O 2±δ (M = W, V, Ce, Zr, Fe, and Cu) Synthesized by Solution Combustion Method

The W, V, Ce, Zr, Fe, and Cu metal ion substituted nanocrystalline anatase TiO2 was prepared by solution combustion method and characterized by XRD, Raman, BET, EPR, XPS, IR TGA, UV absorption, and photoluminescence measurements. The structural studies indicate that the solid solution formation was limited to a narrow range of concentrations of the dopant ions. The photocatalytic degradation of 4-nitrophenol under UV and solar exposure was investigated with Ti1-xMxO2±δ. The degradation rates of 4-nitrophenol with these catalysts were lesser than the degradation rates of 4-nitrophenol with undoped TiO2 both with UV exposure and solar radiation. However, the photocatalytic activities of most metal ion doped TiO2 are higher than the activity of the commercial TiO2, Degussa P25. The decrease in photocatalytic activity is correlated with decrease in photoluminescence due to electron states of metal ions within the band gap of TiO2.

Effect of power line filter on MOV clamping voltage

Metal oxide varistors (MOV) are popularly used to protect offline electronic equipment against power line transients. The offline switched mode power supplies (SMPS) use power line filters and MOVs in the front-end. The power line filter is used to reduce the conducted noise emission into the power line and the MOVs connected before this line filter and the MOVs connected before this line filter to clamp line transients to safer levels thereby protecting the SMPS. Because of the presence of 'X' capacitors at the input of line filter the MOV clamping voltage is increased. This paper presents one such case and gives theoretical and experimental results. An approximate method to predetermine the magnitude of such clamping voltages is also presented.

Determining optimum subband edges for signal compression

The coding gain in subband coding, a popular technique for achieving signal compression, depends on how the input signal spectrum is decomposed into subbands. The optimality of such decomposition is conventionally addressed by designing appropriate filter banks. The issue of optimal decomposition of the input spectrum is addressed by choosing the set of band that, for a given number of bands, will achieve maximum coding gain. A set of necessary conditions for such optimality is derived, and an algorithm to determine the optimal band edges is then proposed. These band edges along with ideal filters, achieve the upper bound of coding gain for a given number of bands. It is shown that with ideal filters, as well as with realizable filters for some given effective length, such a decomposition system performs better than the conventional nonuniform binary tree-structured decomposition in some cases for AR sources as well as images

Reinforcement learning controllers for automatic generation control in power systems having re-heat units with GRC and dead-band

A new automatic generation controller (AGC) design approach, adopting reinforcement learning (RL) techniques, was recently pro- posed [1]. In this paper we demonstrate the design and performance of controllers based on this RL approach for automatic generation control of systems consisting of units having complex dynamics—the reheat type of thermal units. For such systems, we also assess the capabilities of RL approach in handling realistic system features such as network changes, parameter variations, generation rate constraint (GRC), and governor deadband.

Band-Structure Lineup at In0.2Ga0.8N/Si Heterostructures by X-ray Photoelectron Spectroscopy

In0.2Ga0.8N layers were directly grown on Si(111) substrate by plasma-assisted molecular beam epitaxy (PAMBE). Structural characteristics of the as-grown InGaN epilayers were evaluated high resolution X-ray diffraction and composition of InGaN was estimated from photoluminescence spectra using the standard Vegard's law. High-resolution X-ray photoemission spectroscopy measurements were used to determine the band offset of wurtzite-In0.2Ga0.8N/Si(111) heterojunctions. The valence band of InGaN is found to be 2.08 +/- 0.04 eV below that of Si. The conduction band offset (CBO) of InGaN/Si heterojunction is found similar to 0.74 eV and a type-II heterojunction. (C) 2012 The Japan Society of Applied Physics

Effect of temperature on the plastic zone size and the shear band density in a bulk metallic glass

High temperature bonded interface indentation experiments are carried out on a Zr based bulk metallic glass (BMG) to examine the plastic deformation characteristics in subsurface deformation zone under a Vickers indenter. The results show that the shear bands are semi-circular in shape and propagate in radial direction. At all temperatures the inter-band spacing along the indentation axis is found to increase with increasing distance from the indenter tip. The average shear band spacing monotonically increases with temperature whereas the shear band induced plastic deformation zone is invariant with temperature. These observations are able to explain the increase in pressure sensitive plastic flow of BMGs with temperature. (C) 2011 Elsevier B.V. All rights reserved.

Acenaphtho[1,2-b]quinoxaline based low band gap copolymers for organic thin film transistor applications

We report the synthesis of a novel class of low band gap copolymers based on anacenaphtho[1,2-b]quinoxaline core and oligothiophene derivatives acting as the acceptor and the donor moieties, respectively. The optical properties of the copolymers were characterized by ultraviolet-visible spectroscopy while the electrochemical properties were determined by cyclic voltammetry. The band gap of these polymers was found to be in the range 1.8-2.0 eV as calculated from the optical absorption band edge. X-ray diffraction measurements show weak pi-pi stacking interactions between the polymer chains. The hole mobility of the copolymers was evaluated using field-effect transistor measurements yielding values in the range 10(-5)-10(-3) cm(2)/Vs.

Interference Alignment in Regenerating Codes for Distributed Storage: Necessity and Code Constructions

Regenerating codes are a class of recently developed codes for distributed storage that, like Reed-Solomon codes, permit data recovery from any arbitrary of nodes. However regenerating codes possess in addition, the ability to repair a failed node by connecting to any arbitrary nodes and downloading an amount of data that is typically far less than the size of the data file. This amount of download is termed the repair bandwidth. Minimum storage regenerating (MSR) codes are a subclass of regenerating codes that require the least amount of network storage; every such code is a maximum distance separable (MDS) code. Further, when a replacement node stores data identical to that in the failed node, the repair is termed as exact. The four principal results of the paper are (a) the explicit construction of a class of MDS codes for d = n - 1 >= 2k - 1 termed the MISER code, that achieves the cut-set bound on the repair bandwidth for the exact repair of systematic nodes, (b) proof of the necessity of interference alignment in exact-repair MSR codes, (c) a proof showing the impossibility of constructing linear, exact-repair MSR codes for d < 2k - 3 in the absence of symbol extension, and (d) the construction, also explicit, of high-rate MSR codes for d = k+1. Interference alignment (IA) is a theme that runs throughout the paper: the MISER code is built on the principles of IA and IA is also a crucial component to the nonexistence proof for d < 2k - 3. To the best of our knowledge, the constructions presented in this paper are the first explicit constructions of regenerating codes that achieve the cut-set bound.

Determination of MBE grown wurtzite GaN/Ge3N4/Ge heterojunctions band offset by X-ray photoelectron spectroscopy

Hexagonal Ge3N4 layer was prepared on Ge surface by in situ direct atomic source nitridation and it is promising buffer layer to grow GaN on Ge (111). The valence band offset (VBO) of GaN/Ge3N4/Ge heterojunctions is determined by X-ray photoemission spectroscopy. The valence band (VB) of Ge3N4 is found to be 0.38?+/-?0.04?eV above the GaN valance band and 1.14?+/-?0.04?eV below the Ge. The GaN/Ge3N4 and Ge3N4/Ge are found type-II and type-I heterojunctions, respectively. The exact measurements of the VBO and conduction band offset (CBO) are important for use of GaN/Ge3N4/Ge (111) heterosystems.

Studies on electrical switching behavior and optical band gap of amorphous Ge-Te-Sn thin films

Amorphous thin film Ge15Te85-xSnx (1 <= x <= 5) and Ge17Te83-xSnx (1 <= x <= 4) switching devices have been deposited in sandwich geometry using a flash evaporation technique, with aluminum as the top and bottom electrodes. Electrical switching studies indicate that these films exhibit memory type electrical switching behavior. The switching fields for both the series of samples have been found to decrease with increase in Sn concentration, which confirms that the metallicity effect on switching fields/voltages, commonly seen in bulk glassy chalcogenides, is valid in amorphous chalcogenide thin films also. In addition, there is no manifestation of rigidity percolation in the composition dependence of switching fields of Ge15Te85-xSnx and Ge17Te83-xSnx amorphous thin film samples. The observed composition dependence of switching fields of amorphous Ge15Te85-xSnx and Ge17Te83-xSnx thin films has been understood on the basis of Chemically Ordered Network model. The optical band gap for these samples, calculated from the absorption spectra, has been found to exhibit a decreasing trend with increasing Sn concentration, which is consistent with the composition dependence of switching fields.