Materiais tipo hidrotalcita contendo Cu como precursores de catalisadores para a redução de NO pelo CO

Dentre os óxidos de nitrogênio, o N2O é um gás do efeito estufa altamente nocivo. Devido ao potencial contaminante que este possui, torna-se importante a implementação de processos capazes de reduzir a sua emissão, bem como a dos NOx. Tradicionalmente, têm-se empregado catalisadores baseados em metais nobres, porém estes apresentam como principal desvantagem o elevado custo. Desse modo, sempre houve o interesse pelo uso de outros tipos de catalisadores e metais neste sistema de reação. Nesse contexto, na presente dissertação procurou-se sintetizar precursores de catalisadores tipo hidrotalcita Cu-AlCO3 e avaliar o seu desempenho na reação de redução do NO pelo CO, visando melhorar a atividade e a seletividade a N2. Foram estudados diversos parâmetros de síntese e diferentes composições. Os parâmetros mais influentes na síntese foram a relação molar H2O/(Al+Cu) e a temperatura de secagem do sólido, cujos melhores valores foram 434 e 25C, respectivamente. Testaram-se dois sólidos, o primeiro composto pela fase hidrotalcita quase pura e o segundo com uma clara mistura entre fases hidrotalcita e malaquita. As análises térmica e química revelaram presença da fase malaquita em ambos os materiais com porcentagens de 14 e 40%, respectivamente. Os resultados de difração de raios X indicaram a presença da fase CuO para os catalisadores provenientes da calcinação dos materiais tipo hidrotalcita, porém a espectroscopia Raman evidenciou a presença de Cu2O no catalisador proveniente do material com maior mistura de fases. Os ciclos redox mostraram uma melhora na redutibilidade dos catalisadores após um ciclo de oxidação-redução. Além disso, foi estudado o impacto do envelhecimento térmico a 900C por 12 h no desempenho dos catalisadores. Pelos resultados de teste catalítico os melhores desempenhos foram alcançados pelos catalisadores envelhecidos, contudo o catalisador proveniente do precursor mais puro apresentou-se melhor tanto novo como envelhecido em termos de menor rendimento de N2O. Uma comparação com catalisadores à base de metal nobre mostrou um bom desempenho dos catalisadores à base de cobre, com a vantagem destes apresentarem menor emissão de N2O em temperaturas menores

The effect of an upstream turbine on a low-aspect ratio vane

The interaction between a high-pressure rotor and a downstream vane is dominated by vortex-blade interaction. Each rotor blade passing period two co-rotating vortex pairs, the tip-leakage and upper passage vortex and the lower passage and trailing shed vortex, impinge on, and are cut by, the vane leading edge. In addition to the streamwise vortex the tip-leakage flow also contains a large velocity deficit. This causes the interaction of the tip-leakage flow with a downstream vane to differ from typical vortex blade interaction. This paper investigates the effect these interaction mechanisms have on a downstream vane. The test geometry considered was a low aspect ratio second stage vane located within a S-shaped diffuser with large radius change mounted downstream of a shroudless high-pressure turbine stage. Experimental measurements were conducted at engine-representative Mach and Reynolds numbers, and data was acquired using a fast-response aerodynamic probe upstream and downstream of the vane. Time-resolved numerical simulations were undertaken with and without a rotor tip gap in order to investigate the relative magnitude of the interaction mechanisms. The presence of the upstream stage is shown to significantly change the structure of the secondary flow in the vane and to cause a small drop in its performance.

Stabilizing effect of surrounding gas flow on a plane liquid sheet

The stability of a plane liquid sheet is studied experimentally and theoretically, with an emphasis on the effect of the surrounding gas. Co-blowing with a gas velocity of the same order of magnitude as the liquid velocity is studied, in order to quantify its effect on the stability of the sheet. Experimental results are obtained for a water sheet in air at Reynolds number Rel = 3000 and Weber number W e = 300, based on the half-thickness of the sheet at the inlet, water mean velocity at the inlet, the surface tension between water and air and water density and viscosity. The sheet is excited with different frequencies at the inlet and the growth of the waves in the streamwise direction is measured. The growth rate curves of the disturbances for all air flow velocities under study are found to be within 20 % of the values obtained from a local spatial stability analysis, where water and air viscosities are taken into account, while previous results from literature assuming inviscid air overpredict the most unstable wavelength with a factor 3 and the growth rate with a factor 2. The effect of the air flow on the stability of the sheet is scrutinized numerically and it is concluded that the predicted disturbance growth scales with (i) the absolute velocity difference between water and air (inviscid effect) and (ii) the square root of the shear from air on the water surface (viscous effect).

Global linear and nonlinear stability of viscous confined plane wakes with co-flow

The global stability of confined uniform density wakes is studied numerically, using two-dimensional linear global modes and nonlinear direct numerical simulations. The wake inflow velocity is varied between different amounts of co-flow (base bleed). In accordance with previous studies, we find that the frequencies of both the most unstable linear and the saturated nonlinear global mode increase with confinement. For wake Reynolds number Re = 100 we find the confinement to be stabilising, decreasing the growth rate of the linear and the saturation amplitude of the nonlinear modes. The dampening effect is connected to the streamwise development of the base flow, and decreases for more parallel flows at higher Re. The linear analysis reveals that the critical wake velocities are almost identical for unconfined and confined wakes at Re ≈ 400. Further, the results are compared with literature data for an inviscid parallel wake. The confined wake is found to be more stable than its inviscid counterpart, whereas the unconfined wake is more unstable than the inviscid wake. The main reason for both is the base flow development. A detailed comparison of the linear and nonlinear results reveals that the most unstable linear global mode gives in all cases an excellent prediction of the initial nonlinear behaviour and therefore the stability boundary. However, the nonlinear saturated state is different, mainly for higher Re. For Re = 100, the saturated frequency differs less than 5% from the linear frequency, and trends regarding confinement observed in the linear analysis are confirmed.

Stabilizing effect of surrounding gas flow on a plane liquid sheet

The stability of a plane liquid sheet is studied experimentally and theoretically, with an emphasis on the effect of the surrounding gas. Co-blowing with a gas velocity of the same order of magnitude as the liquid velocity is studied, in order to quantify its effect on the stability of the sheet. Experimental results are obtained for a water sheet in air at Reynolds number Rel = 3000 and Weber number We = 300, based on the half-thickness of the sheet at the inlet, water mean velocity at the inlet, the surface tension between water and air and water density and viscosity. The sheet is excited with different frequencies at the inlet and the growth of the waves in the streamwise direction is measured. The growth rate curves of the disturbances for all air flow velocities under study are found to be within 20% of the values obtained from a local spatial stability analysis, where water and air viscosities are taken into account, while previous results from literature assuming inviscid air overpredict the most unstable wavelength with a factor 3 and the growth rate with a factor 2. The effect of the air flow on the stability of the sheet is scrutinized numerically and it is concluded that the predicted disturbance growth scales with (i) the absolute velocity difference between water and air (inviscid effect) and (ii) the square root of the shear from air on the water surface (viscous effect).

Measurement-Integrated simulations and Kalman filter applied to a co-flowing jet

This paper deals with the experimental evaluation of a flow analysis system based on the integration between an under-resolved Navier-Stokes simulation and experimental measurements with the mechanism of feedback (referred to as Measurement-Integrated simulation), applied to the case of a planar turbulent co-flowing jet. The experiments are performed with inner-to-outer-jet velocity ratio around 2 and the Reynolds number based on the inner-jet heights about 10000. The measurement system is a high-speed PIV, which provides time-resolved data of the flow-field, on a field of view which extends to 20 jet heights downstream the jet outlet. The experimental data can thus be used both for providing the feedback data for the simulations and for validation of the MI-simulations over a wide region. The effect of reduced data-rate and spatial extent of the feedback (i.e. measurements are not available at each simulation time-step or discretization point) was investigated. At first simulations were run with full information in order to obtain an upper limit of the MI-simulations performance. The results show the potential of this methodology of reproducing first and second order statistics of the turbulent flow with good accuracy. Then, to deal with the reduced data different feedback strategies were tested. It was found that for small data-rate reduction the results are basically equivalent to the case of full-information feedback but as the feedback data-rate is reduced further the error increases and tend to be localized in regions of high turbulent activity. Moreover, it is found that the spatial distribution of the error looks qualitatively different for different feedback strategies. Feedback gain distributions calculated by optimal control theory are presented and proposed as a mean to make it possible to perform MI-simulations based on localized measurements only. So far, we have not been able to low error between measurements and simulations by using these gain distributions.

Co-occurrence of A1555G and G11778A in a Chinese family with high penetrance of Leber's hereditary optic neuropathy

Co-occurrence of double pathogenic mtDNA mutations with different claimed pathological roles in one mtDNA is infrequent. It is tentative to believe that each of these pathogenic mutations would have its own deleterious effect. Here we reported one three-g

The effect of addition of ZrO2 to Fe2O3 for hydrogen production by chemical looping

In this paper, a synthetic mixture of ZrO2 and Fe 2O3 was prepared by coprecipitation for use in chemical looping and hydrogen production. Cycling experiments in a fluidized bed showed that a material composed of 30 mol % ZrO2 and 70 mol % Fe 2O3 was capable of producing hydrogen with a consistent yield of 90 mol % of the stoichiometric amount over 20 cycles of reduction and oxidation at 1123 K. Here, the iron oxide was subjected to cycles consisting of nearly 100% reduction to Fe followed by reoxidation (with steam or CO 2 and then air) to Fe2O3. There was no contamination by CO of the hydrogen produced, at a lower detection limit of 500 ppm, when the conversion of Fe3O4 to Fe was kept below 90 mol %. A preliminary investigation of the reaction kinetics confirmed that the ZrO2 support does not inhibit rates of reaction compared with those observed with iron oxide alone. © 2012 American Chemical Society.

Effect of indium-doped interlayer on the strain relief in GaN films grown on Si(111)

Crack-free GaN films have been achieved by inserting an Indoped low-temperature (LT) AlGaN interlayer grown on silicon by metalorganic chemical vapor deposition. The relationship between lattice constants c and a obtained by X-ray diffraction analysis shows that indium doping interlayer can reduce the stress in GaN layers. The stress in GaN decreases with increasing trimethylindium (TMIn) during interlayer growth. Moreover, for a smaller TMIn flow, the stress in GaN decreases dramatically when In acts as a surfactant to improve the crystallinity of the AlGaN interlayer, and for a larger TMIn flow, the stress will increase again. The decreased stress leads to smoother surfaces and fewer cracks for GaN layers by using an In-doped interlayer than by using an undoped interlayer. In doping has been found to enhance the lateral growth and reduce the growth rate of the c face. It can explain the strain relief and cracks reduction in GaN films. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Near infrared photoluminescence from Yb,Al Co-implanted SiO2 films on silicon

Intense room-temperature near infrared (NIR) photoluminescence (980 nm and 1032 nm) is observed from Yb,Al co-implanted SiO2 films on silicon. The optical transitions occur between the F-2(5/2) and F-2(7/2) levels of Yb3+ in SiO2. The additional Al-implantation into SiO2 films can effectively improve the concentration quenching effect of Yb3+ in SiO2. Photoluminescence exitation sprectroscopy shows that the NIR photoluminescence is due to the non-radiative energy transfer from Al-implantation-induced non-bridging oxygen hole defects in SiO2 to Yb3+ in the Yb-related luminescent complexes. It is believed that the defect-mediated luminscence of rare-earth ions in SiO2 is very effective.

Optical and electrical investigation of low dimensional self-assembled InAs quantum dot field effect transistors

Self-assembled InAs QD dot-in-a-well (DWELL) structures were grown on GaAs substrate by MBE system, and heterojunction modulation-doped field effect transistor (MODFET) was fabricated. The optical properties of the samples show that the photoluminescence of InAs/GaAs self-assembled quantum dot (SAQD) is at 1.265 mu m at 300 K. The temperature-dependence of the abnormal redshift of InAs SAQD wavelength with the increasing temperature was observed, which is closely related with the inhomogeneous size distribution of the InAs quantum dot. According to the electrical measurement, high electric field current-voltage characteristic of the MODFET device were obtained. The embedded InAs QD of the samples can be regard as scattering centers to the vicinity of the channel electrons. The transport property of the electrons in GaAs channel will be modulated by the QD due to the Coulomb interaction. It has been proposed that a MODFET embedded with InAs QDs presents a novel type of field effect photon detector.

Effect of noncoherent islands on the optical properties of the 1.3 mu m InAs/GaAs quantum dots during rapid thermal annealing

The effect of thermal annealing of InAs/GaAs quantum dots (QDs) with emission wavelength at 1.3 mu m have been investigated by photoluminescence (PL) and transmission electron microscopy (TEM measurements. There is a dramatic change in the A spectra when the annealing temperature is raised up to 800 degrees C: an accelerated blushifit of the main emission peak of QDs together with an inhomogeneous broadening of the linewidth. The TEM images shows that the lateral size of normal QDs decreases as the annealing temperature is increased, while the noncoherent islands increase their size and densit. A small fraction of the relative large QDs contain dislocations when the annealing temperature increases up to 800 degrees C. The latter leads to the strong decrease of the PL intensity.

INTERFACIAL REACTIONS IN THE CO/SI/GAAS AND SI/CO/GAAS SYSTEMS

The interfacial reactions between thin films of cobalt and silicon and (100)-oriented GaAs substrates in two configurations, Co/Si/GaAs and Si/Co/GaAs, were studied using a variety of techniques including Auger electron spectroscopy, x-ray diffraction, and transmission electron microscopy. The annealing conditions were 200, 300, 400, 600-degrees-C for 30 min, and rapid thermal annealing for 15 s. It was found that Si layer in the Co/Si/GaAs system acts as a barrier at the interface between Co and GaAs when annealed up to 600-degrees-C. The interfacial reaction between Co and Si is faster than that between Co and GaAs in the system of Si/Co/GaAs. The sequence of compound formation for the two metallizations studied (Co/Si/GaAs and Si/Co/GaAs) depends strongly on the sample configuration as well as the layer thickness of Si and Co (Co/Si atomic ratio). From our results, it is promising to utilize Co/Si/GaAs multilayer film structure to make a CoSi2/GaAs contact, and this CoSi2 may offer an alternative to the commonly used W silicides as improved gate metallurgies in self-aligned metal-semiconductor field effect transistor (MESFET) technologies.

The effect of low temperature GaAs nucleation on the growth of GaN on Silicon (001) during MOVPE process

High quality cubic GaN was grown on Silicon (001) by metalorganic vapor phase epitaxy (MOVPE) using a GaAs nucleation layer grown at low temperature. The influence of various nucleation conditions on the GaN epilayers' quality was investigated. We found that the GaAs nucleation layer grown by atomic layer epitaxy (ALE) could improve the quality of GaN films by depressing the formation of mixed phase. Photoluminescence (PL) and X-ray diffraction were used to characterize the properties of GaN epilayers. High quality GaN epilayers with PL full width at half maximum (FWHM) of 130meV at room temperature and X-ray FWHM of 70 arc-min were obtained by using 10-20nm GaAs nucleation layer grown by ALE.