982 resultados para resistivity


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The study area is the Garoupa Field, located 75 km from the coast of Rio de Janeiro in bathymetric elevation of 125 m and it is the first important offshore discovery of the Campos Basin with hydrocarbon production in the Albian carbonates. The high significance of carbonate rock reservoirs for the global oil industry and its degree of complexity, combined with the fact that the Garoupa Field is a mature field, make this research project interesting to develop a re-exploratory vision of the study area. The objective of this paper is to characterize the physical properties of the Macae Group reservoirs in the Garoupa Field through well correlation techniques, petrophysical analysis and seismic interpretation (3D), in order to evaluate qualitatively and quantitatively the response of geophysical data to the presence of carbonate rock reservoirs. From the analysis of well profiles (gamma ray, resistivity, density and sonic) it was possible to identify six reservoir levels in the Quissamã Formation. As a result, the reservoirs have good correlation between the wells in the Garoupa Field and show lateral facies variation. In the seismic interpretation, structural contour maps were generated in time (ms) from the top of the Macae Group and two horizons that correspond to the reservoir levels. These maps show that the oil producing area of this field is a structural high located at the west of the interpreted seismic cube, and it was classified as a rollover limited by lateral faults forming a horst. The seismic attribute maps show a good response to the reservoirs of the Garoupa Field because they are associated with amplitude anomalies, verified by the correlation between the physical properties of the reservoir rock and seismic data through cross plots, with emphasis in a linear correlation between the resistivity profile and the values of Maximum Absolute Amplitude and RMS Amplitude attributes

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The geophysical methods are used as tools that, together with other data, assist in target detail and sizing of ore bodies. This paper presents the results of the application of DC resistivity geophysical method on a manganese mineral occurrence located in Itapira, in the northern portion of São Paulo state, hosted predominantly in schists and quartzits of Itapira Group. The integration of geophysical data resulted in the elaboration of electrical resistivity models, where it was possible observe that the mineralized body, composed predominantly of manganese oxides and hydroxides, has a pattern of high resistivity (above 5000 Ω.m) both surface and subsurface. The contrast with the host rock is characterized mainly by different minerals assemblages and by the presence of local groundwater. The results accomplished in this paper reveal that the application of DC resistivity method is valid in primary evaluations of supergene deposits

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Geophysics studies in areas impacted by petroleum derivatives describe abnormalities of both low and high electrical resistivity (the opposite of electrical conductivity), confirmed as contaminant phase by chemical analysis: this contradiction can be explained by degrading processes that naturally occur and create sub products that can change the environment conductivity. Monitoring the variation of the parameters mentioned serves as a comparative basis to the variation in geoelectrical parameters, which identified the correlation between the same contaminant parameters and the difference between their behavior studied apart, as well as its relations with the biodegradation process. The results are applied to the fuel distribution and storage sectors, leading to the diagnosis and monitoring of possible groundwater contamination scenarios, and the knowledge of the area exposure time to the contaminant, besides the better remediation alternative and impacts control. Among some conclusions, the most significant are the decrease in conductivity over time, so as the increase in Eh value in the gasoline contaminated tank, as well as the decrease in the pH value in the second tank with ethanol, which can be attributed to its degradation. Comparing the variations in both tanks, it is evident that Eh, pH and electrical conductivity do not behave temporally in a similar way, although some correlations between Eh and pH can be related.

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This work describes the synthesis of highly conducting antimony-doped tin oxide (ATO) nanocrystals prepared via a nonaqueous sol–gel route in the size range of 4–6 nm and provides insights into its electrical properties. The antimony composition was varied from 1 to 18 mol% and the lowest resistivity (4.0 × 10−4Ω·cm) was observed at room temperature in the SnO2:8.8 mol% Sb composition. The samples were evaluated by X-ray diffraction, high-resolution transmission electron microscopy, energy-dispersive X-ray spectroscopy, and scanning electron microscope, and resistivity measurements were taken in the four-probe mode in the temperature range of 13–300 K. The results show highly crystalline nanoparticles in a monodisperse colloidal system, dependence on the shape of ATO nanoparticles as a function of Sb distribution, low resistivity, and semiconductor–metal transition.

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SnO2-based varistors are strong candidates to replace the ZnO-based varistors due to ordering fewer additives to improve its electrical behavior as well as by showing similar nonlinear characteristics of ZnO varistors. In this work, SnO2-nanoparticles based-varistors with addition of 1.0 %mol of ZnO and 0.05 %mol of Nb2O5 were synthesized by chemical route. SnO2.ZnO.Nb2O5-films with 5 μm of thickness were obtained by electrophoretic deposition (EPD) of the nanoparticles on Si/Pt substrate from alcoholic suspension of SnO2-based powder. The sintering step was carried out in a microwave oven at 1000 °C for 40 minutes. Then, Cr3+ ions were deposited on the films surface by EPD after the sintering step. Each sample was submitted to different thermal treatments to improve the varistor behavior by diffusion of ions in the samples. The films showed a nonlinear coefficient (α) greater than 9, breakdown voltage (VR) around 60 V, low leakage current (IF ≈ 10-6 A), height potential barrier above 0.5 eV and grain boundary resistivity upward of 107 Ω.cm.

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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

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Carbon fiber reinforced carbon composites can be made by iterative liquid impregnation or gas phase carbon deposition routes. In both cases, at the final processing stage the carbon fiber is embedded in carbon matrix which results in unique properties such as low density, high thermal conductivity and thermal shock resistance, low thermal expansion and high modulus, in relation to other refractory materials. In the present study assembled three-directional and four-directional preforms, having 50% volume of pores, were densified by iterative cycles of thermoset resin impregnation followed by pyrolysis under inert atmosphere, until appropriate densities were achieved. The thermoset resin is converted in a carbon matrix during pyrolysis. The iterative manufacturing process of the carbon fiber reinforced carbon composites is evaluated by means of nondestructive techniques based on X-ray computed tomography and electrical resistivity. X-ray computed tomography gives a general mapping view of the filling pores of the preforms which impacts results of the electrical resistivity. After six processing cycles and heat treatments up to 2000?, the final densities of the three-directional and four-directional carbon fiber reinforced carbon composites were 1.16g/cm(3) and an electrical resistivity of approximate to 0.07m. The configuration of preforms, three-directional or four-directional, did not alter the densification profile, in terms of increasing density and reducing porosity during the processing cycles.

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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Alumina thin films have been obtained by resistive evaporation of Al layer, followed by thermal oxidation achieved by annealing in appropriate atmosphere (air or O-2-rich), with variation of annealing time and temperature. Optical and structural properties of the investigated films reveal that the temperature of 550 degrees C is responsible for fair oxidation. Results of surface electrical resistivity, Raman and infrared spectroscopies are in good agreement with this finding. X-ray and Raman data also suggest the crystallization of Si nuclei at glass substrate-alumina interface, which would come from the soda-lime glass used as substrate. The main goal in this work is the deposition of alumina on top of SnO2 to build a transparent field-effect transistor. Some microscopy results of the assembled SnO2/Al2O3 heterostructure are also shown.

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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Amorphous SiC(x)N(y) films have been deposited on (100) Si substrates by RF magnetron sputtering of a SiC target in a variable nitrogen-argon atmosphere. The as-deposited films were submitted to thermal anneling in a furnace under argon atmosphere at 1000 degrees C for 1 hour. Composition and structure of unannealed and annealed samples were investigated by RBS and FTIR. To study the electrical characteristics of SiC(x)N(y) films, Metal-insulator-semiconductor (MIS) structures were fabricated. Elastic modulus and hardness of the films were determined by nanoindentation. The results of these studies showed that nitrogen content and thermal annealing affect the electrical, mechanical and structural properties of SiC(x)N(y) films.