MODIFIED ENGAGEMENT METHOD FOR MATRIX OPERATION

We describe a modified engagement method for matrix operation based on a two-dimensional crossed-ring interconnection network, Our method incorporates fewer steps than that reported by Bocker et al. [Appl. Opt. 22, 804 (1983)], and its performance is found to be the most efficient (minimum steps) in comparison with other systolic and/or engagement methods for matrix operation. Thus, it may be helpful for other optical and electronic implementations of matrix operations. One compact optoelectronic integrity approach for implementing the modified engagement method is briefly described. (C) 1995 Optical Society of America

Compact parallel optical modified-signed-digit arithmetic-logic array processor with electron-trapping device

A compact two-step modified-signed-digit arithmetic-logic array processor is proposed. When the reference digits are programmed, both addition and subtraction can be performed by the same binary logic operations regardless of the sign of the input digits. The optical implementation and experimental demonstration with an electron-trapping device are shown. Each digit is encoded by a single pixel, and no polarization is included. Any combinational logic can be easily performed without optoelectronic and electro-optic conversions of the intermediate results. The system is compact, general purpose, simple to align, and has a high signal-to-noise ratio. (C) 1999 Optical Society of America.

Estratégia para validação de processos de esterilização por vapor saturado em autoclaves nas indústrias farmacêuticas

O objetivo deste trabalho foi criar uma metodologia de validação e revalidação dos processos de esterilização por calor úmido em autoclaves horizontais, destacando os pontos críticos do processo e concentrando esforços onde são realmente necessários. Foram realizados estudos de distribuição térmica, de penetração de calor e de desafio microbiológico na validação da autoclave STERIS FINNAQUA 6912. Com o objetivo de avaliar o impacto de uma mudança e compreender a relação entre os fatores e suas interações para o processo de esterilização, foi utilizado o planejamento fatorial 23 dos fatores densidade da carga (quantidade de itens), embalagem do produto e localização na câmara interna. Os estudos de distribuição térmica confirmaram a distribuição homogênea de calor na câmara interna durante o tempo de exposição a 121C. As temperaturas variaram entre 120,35C e 120,92C com desvio padrão máximo de 0,12C. Os estudos de penetração de calor confirmaram exposições equivalentes a 121C por 24 minutos em todos os itens da carga (F0 > 24 minutos). Em todos os estudos para cargas secas, os índices de capacidade do processo (Cpk) foram maiores que 1,33. Os ensaios de desafio microbiológico garantiram níveis de esterilidade (S.A.L.) maiores que 12 reduções logarítmicas em relação aos indicadores biológicos Geobacillus stearothermophilus. Não foi detectada a presença de endosporos sobreviventes nos 132 indicadores biológicos utilizados nos quatro ciclos desafiados. Com base no planejamento experimental verificou-se que, para o nível de significância de 95% , as mudanças nos fatores posição, embalagem e quantidade da carga não são significativas para o processo de esterilização, em autoclave com remoção forçada de ar. Já para o nível de significância de 90%, a interação Posição x Embalagem apresentou significância estatística no processo de esterilização com valor P de 0,080

Code conversion from signed-digit to complement representation based on look-ahead optical logic operations

We present, for the first time to our knowledge, a generalized lookahead logic algorithm for number conversion from signed-digit to complement representation. By properly encoding the signed-digits, all the operations are performed by binary logic, and unified logical expressions can be obtained for conversion from modified-signed-digit (MSD) to 2's complement, trinary signed-digit (TSD) to 3's complement, and quarternary signed-digit (QSD) to 4's complement. For optical implementation, a parallel logical array module using an electron-trapping device is employed and experimental results are shown. This optical module is suitable for implementing complex logic functions in the form of the sum of the product. The algorithm and architecture are compatible with a general-purpose optoelectronic computing system. (C) 2001 Society of Photo-Optical Instrumentation Engineers.

One-step digit-set-restricted modified signed-digit adder using an incoherent correlator based on a shared content-addressable memory

An efficient one-step digit-set-restricted modified signed-digit (MSD) adder based on symbolic substitution is presented. In this technique, carry propagation is avoided by introducing reference digits to restrict the intermediate carry and sum digits to {1,0} and {0,1}, respectively. The proposed technique requires significantly fewer minterms and simplifies system complexity compared to the reported one-step MSD addition techniques. An incoherent correlator based on an optoelectronic shared content-addressable memory processor is suggested to perform the addition operation. In this technique, only one set of minterms needs to be stored, independent of the operand length. (C) 2002 society or Photo-Optical Instrumentation Engineers.

连续波工作大功率半导体激光器阵列的温度分布

用Ansys软件模拟了大功率半导体激光器阵列的稳态温度分布，并对自行研制的半导体激光器阵列的温度变化进行了测试，结果表明理论计算与实验结果基本吻合。该模拟结果对大功率半导体激光器阵列的封装设计具有现实的指导意义。

Dynamic optical coupled system employing even-numbered Dammann gratings

Dammann gratings are well known for their ability to generate arrays of Lmiform-intensity beams from an incoming monochromatic beam. We apply the even-numbered Dammann grating to achieve dynamic optical coupled technology. A 1 x N dynamic optical coupled system is developed by employing two complementary even-numbered Dammann gratings. With this system we can achieve a beam splitter and combiner as a switch between them according to the relative shift between the gratings. Also, this system is a preferable approach in integral packaging. More importantly, this device has the potential to be applied to the splitting of a large array, e.g., 8 x 16 array and 64 x 64 array, which is difficult to be realized with conventional splitting methods. We experimentally demonstrated a 1 x 8 coupler at the wavelength of 1550 nm. Furthermore we analyze the effects of the alignment errors between gratings and the wavelength-dependent error on efficiency and uniformity. The experimental results and the influence of alignment error and wavelength-dependent error are analyzed in detail. (c) 2006 Optical Society of America.

Heteroepitaxy of Group IV and Group III-V semiconductor alloys for photovoltaic applications

Photovoltaic energy conversion represents a economically viable technology for realizing collection of the largest energy resource known to the Earth -- the sun. Energy conversion efficiency is the most leveraging factor in the price of energy derived from this process. This thesis focuses on two routes for high efficiency, low cost devices: first, to use Group IV semiconductor alloy wire array bottom cells and epitaxially grown Group III-V compound semiconductor alloy top cells in a tandem configuration, and second, GaP growth on planar Si for heterojunction and tandem cell applications.

Metal catalyzed vapor-liquid-solid grown microwire arrays are an intriguing alternative for wafer-free Si and SiGe materials which can be removed as flexible membranes. Selected area Cu-catalyzed vapor-liquid solid growth of SiGe microwires is achieved using chlorosilane and chlorogermane precursors. The composition can be tuned up to 12% Ge with a simultaneous decrease in the growth rate from 7 to 1 μm/min^-1. Significant changes to the morphology were observed, including tapering and faceting on the sidewalls and along the lengths of the wires. Characterization of axial and radial cross sections with transmission electron microscopy revealed no evidence of defects at facet corners and edges, and the tapering is shown to be due to in-situ removal of catalyst material during growth. X-ray diffraction and transmission electron microscopy reveal a Ge-rich crystal at the tip of the wires, strongly suggesting that the Ge incorporation is limited by the crystallization rate.

Tandem Ga_1-xIn_xP/Si microwire array solar cells are a route towards a high efficiency, low cost, flexible, wafer-free solar technology. Realizing tandem Group III-V compound semiconductor/Si wire array devices requires optimization of materials growth and device performance. GaP and Ga_1-xIn_xP layers were grown heteroepitaxially with metalorganic chemical vapor deposition on Si microwire array substrates. The layer morphology and crystalline quality have been studied with scanning electron microscopy and transmission electron microscopy, and they provide a baseline for the growth and characterization of a full device stack. Ultimately, the complexity of the substrates and the prevalence of defects resulted in material without detectable photoluminescence, unsuitable for optoelectronic applications.

Coupled full-field optical and device physics simulations of a Ga_0.51In_0.49P/Si wire array tandem are used to predict device performance. A 500 nm thick, highly doped "buffer" layer between the bottom cell and tunnel junction is assumed to harbor a high density of lattice mismatch and heteroepitaxial defects. Under simulated AM1.5G illumination, the device structure explored in this work has a simulated efficiency of 23.84% with realistic top cell SRH lifetimes and surface recombination velocities. The relative insensitivity to surface recombination is likely due to optical generation further away from the free surfaces and interfaces of the device structure.

Finally, GaP has been grown free of antiphase domains on Si (112) oriented substrates using metalorganic chemical vapor deposition. Low temperature pulsed nucleation is followed by high temperature continuous growth, yielding smooth, specular thin films. Atomic force microscopy topography mapping showed very smooth surfaces (4-6 Å RMS roughness) with small depressions in the surface. Thin films (~ 50 nm) were pseudomorphic, as confirmed by high resolution x-ray diffraction reciprocal space mapping, and 200 nm thick films showed full relaxation. Transmission electron microscopy showed no evidence of antiphase domain formation, but there is a population of microtwin and stacking fault defects.

基于达曼光栅的动态光耦合器

提出了一种基于达曼光栅的动态光耦合器,通过控制装置中达曼光栅位移参量,可实现入射光束的分束或合束以及两者之间的动态转换。适当选择达曼光栅类型可实现任意N×M的动态光耦合。实验中以1550 nm光波长为例,对1×8达曼动态光耦合器进行测量,测得其实现光开关功能时插入损耗为0.43 dB,实现光分束功能时均匀性达到0.03,单路插入损耗均值为10.5 dB。该实验装置易于调节、体积小、能耗低,且关键元件达曼光栅制作工艺成熟,易于批量化生产。特别是在实现中大规模光交换阵列时,该方案就具有更明显的优越性,有实用意

Modelling algal blooms

This is the final report on the research project to develop predictive models to quantify algal blooms in relation to environmental variables. The project's objectives were to develop models simulating the impact of vertical structure and mass transfer upon the dynamics of planktonic algae, including cyanobacteria, in lakes and reservoirs, to assess the potential of sedimentary phosphorus to sustain algal growth following reduction in external loading and to expand and enhance formulations to predict behaviour of blue-green algal populations and to incorporate these into a model software package. As part of the project a strategy for the production of a user-friendly packaging for the modelling software PROTEC-2 adaptable to particular sites was developed.

Propriedades ópticas, magnéticas e estruturais de monocristais Cs2NaAlF6 dopados com cromo trivalente

Este trabalho teve por objetivo a realização do estudo das propriedades ópticas, magnéticas e estruturais do cristal elpasolita Cs2NaAlF6 dopado com as concentrações de 0,1%, 1,0%, 3,0%, 10,0%, 30,0% e 50,0% de Cr3+. O interesse no estudo deste sistema reside na existência de uma larga e intensa banda de luminescência na temperatura ambiente, que se estende do visível ao infravermelho próximo, podendo então ser utilizado como fonte de radiação sintonizável em dispositivos ópticos, optoeletrônicos e detectores, entre outros. Para a investigação das propriedades ópticas foram feitas medidas de luminescência, excitação e luminescência resolvida no tempo, na temperatura ambiente e a baixas temperaturas. Os resultados obtidos mostram largas bandas de luminescência atribuídas aos íons de Cr3+, ocupando dois sítios octaédricos não equivalentes. Os resultados também mostram que a intensidade integrada da luminescência, o baricentro da banda de emissão e o tempo de vida do estado luminescente variam com a concentração de impureza residente no sistema. Foram realizadas medidas de calor específico em função do campo magnético em uma larga faixa de temperatura, cujos resultados mostram o aparecimento do efeito Schottky a baixas temperaturas. Medidas de susceptibilidade magnética em funcão da temperatura também foram realizadas, e mostram um comportamento paramagnético, típico do íon impureza Cr3+, com um ordenamento magnético de curto alcance. Para a determinação das propriedades estruturais foram realizadas medidas de difração de nêutrons na temperatura ambiente.