872 resultados para Radio in propaganda.


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Automated Identification and in particular, Radio Frequency Identification (RFID) promises to assist with the automation of mass customised production processes. RFID has long been used to gather a history or trace of part movements, but the use of it as an integral part of the control process is yet to be fully exploited. Such use places stringent demands on the quality of the sensor data and the method used to interpret that data. in particular, this paper focuses on the issue of correctly identifying, tracking and dealing with aggregated objects with the use of RFID. The presented approach is evaluated in the context of a laboratory manufacturing system that produces customised gift boxes. Copyright © 2005 IFAC.

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Provisioning along pedestrian trails by tourists much increased the nutrient quality and patchiness of food (NqPF)for Tibetan macaques (Macaca thibetana) at Mt Emei in spring and summer. In the habitat at a temperate-subtropical transition zone, the mncaque's NqPF could be ordered in a decreasing rank from spring summer to autumn to winter With the aid of a radio-tracking system, I collected ranging data on a multigroup community in three 70-day periods representing the different seasons in 1991-92, Rank-order correlation on the data show that with the decline of NqPF; the groups tended to increase days away from the trail, their effective range size (ERS) their exclusive area (EA) and the number of days spent in the EA, and reduced their group/community density and the ratio of the overlapped range to the seasonal range (ROR). In icy/snowy winter; the macaques searched for mature leaves slowly and carefully in the largest seasonal range with a considerable portion that was nor used in other seasons. Of the responses, the ROR decreased with the reduction in group/community density; and the ERS was the function of both group size (+) and intergroup rank (-) when favorite food was highly clumped. All above responses were clearly bound to maximize foraging effectiveness and minimize energy expenditure, and their integration in term of changes in time and space leads to better understanding macaque ecological adaptability. Based on this study and previous work on behavioral and physiological factors, I suggest a unifying theory of intergroup interactions. Ir! addition, as the rate of behavioral interactions,was also related to the group density, I Waser's (1976) gas model probably applies to behavioral, as well as spatial, data on intergroup interactions.

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Y2-x Erx O3 thin films, with x varying between 0 and 0.72, have been successfully grown on crystalline silicon (c-Si) substrates by radio-frequency magnetron cosputtering of Y2 O 3 and Er2 O3 targets. As-deposited films are polycrystalline, showing the body-centered cubic structure of Y2 O3, and show only a slight lattice parameter contraction when x is increased, owing to the insertion of Er ions. All the films exhibit intense Er-related optical emission at room temperature both in the visible and infrared regions. By studying the optical properties for different excitation conditions and for different Er contents, all the mechanisms (i.e., cross relaxations, up-conversions, and energy transfers to impurities) responsible for the photoluminescence (PL) emission have been identified, and the existence of two different well-defined Er concentration regimes has been demonstrated. In the low concentration regime (x up to 0.05, Er-doped regime), the visible PL emission reaches its highest intensity, owing to the influence of up-conversions, thus giving the possibility of using Y2-x Er x O3 films as an up-converting layer in the rear of silicon solar cells. However, most of the excited Er ions populate the first two excited levels 4I11/2 and 4I13/2, and above a certain excitation flux a population inversion condition between the former and the latter is achieved, opening the route for the realization of amplifiers at 2.75 μm. Instead, in the high concentration regime (Er-compound regime), an increase in the nonradiative decay rates is observed, owing to the occurrence of cross relaxations or energy transfers to impurities. As a consequence, the PL emission at 1.54 μm becomes the most intense, thus determining possible applications for Y2-x Erx O 3 as an infrared emitting material. © 2009 American Institute of Physics.

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Abstract (40-Word Limit): A novel method for sending MIMO wireless signals to remote antenna units over a single multimode fibre is proposed. MIMO streams are sent via different fibre modes using mode division multiplexing. Combined channel measurements of 2km MMF and a typical indoor radio environment show in principle a 2x2 MIMO link at carrier frequencies up to 6GHz.

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A novel method for sending MIMO wireless signals to remote antenna units over a single multimode fibre is proposed. MIMO streams are sent via different fibre modes using mode division multiplexing. Combined channel measurements of 2km MMF and a typical indoor radio environment show in principle a 2×2 MIMO link at carrier frequencies up to 6GHz. © 2012 Optical Society of America.

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This paper demonstrates a novel digital radio distribution system able to transmit not only over optical fibres and coaxial cables but also over twisted pair cables. The digitised RF signal is compressed for maximum transmission efficiency in a way that allows for integral self-learning algorithms to be introduced for multi-service applications. © 2013 IEEE.

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The effect of antenna separation in a 3×3 MIMO system using RoF DAS technology is investigated. Larger antenna separation is found to improve the throughput due to reduced channel correlation and improved SNR. © OSA/OFC/NFOEC 2011.

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This paper experimentally demonstrates that, for two representative indoor distributed antenna system (DAS) scenarios, existing radio-over-fiber (RoF) DAS installations can enhance the capacity advantages of broadband 3 × 3 multiple-input-multiple-output (MIMO) radio services without requiring additional fibers or multiplexing schemes. This is true for both single-and multiple-user cases with a single base station and multiple base stations. First, a theoretical example is used to illustrate that there is a negligible improvement in signal-to-noise ratio (SNR) when using a MIMO DAS with all N spatial streams replicated at N RAUs, compared with a MIMO DAS with only one of the N streams replicated at each RAU for N ≤ 4. It is then experimentally confirmed that a 3 × 3 MIMO DAS offers improved capacity and throughput compared with a 3 × 3 MIMO collocated antenna system (CAS) for the single-user case in two typical indoor DAS scenarios, i.e., one with significant line-of-sight (LOS) propagation and the other with entirely non-line-of-sight (NLOS) propagation. The improvement in capacity is 3.2% and 4.1%, respectively. Then, experimental channel measurements confirm that there is a negligible capacity increase in the 3 × 3 configuration with three spatial streams per antenna unit over the 3 × 3 configuration with a single spatial stream per antenna unit. The former layout is observed to provide an increase of ∼1% in the median channel capacity in both the single-and multiple-user scenarios. With 20 users and three base stations, a MIMO DAS using the latter layout offers median aggregate capacities of 259 and 233 bit/s/Hz for the LOS and NLOS scenarios, respectively. It is concluded that DAS installations can further enhance the capacity offered to multiple users by multiple 3 × 3 MIMO-enabled base stations. Further, designing future DAS systems to support broadband 3 × 3 MIMO systems may not require significant upgrades to existing installations for small numbers of spatial streams. © 2013 IEEE.

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Hydrogenated microcrystalline silicon (mu c-Si:H) thin films were prepared by high-pressure radio-frequency (13.56 MHz) plasma enhanced chemical vapor deposition (rf-PECVD) with a screened plasma. The deposition rate and crystallinity varying with the deposition pressure, rf power, hydrogen dilution ratio and electrodes distance were systematically studied. By optimizing the deposition parameters the device quality mu c-Si:H films have been achieved with a high deposition rate of 7.8 angstrom/s at a high pressure. The V-oc of 560 mV and the FF of 0.70 have been achieved for a single-junction mu c-Si:H p-i-n solar cell at a deposition rate of 7.8 angstrom/s.

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The composite films of the nanocrystalline GaAs1-xSbx-SiO2 have been successfully deposited on glass and GaSb substrates by radio frequency magnetron co-sputtering. The 10K photoluminescence (PL) properties of the nanocrystalline GaAs1-xSbx indicated that the PL peaks of the GaAs1-xSbx nanocrystals follow the quantum confinement model very closely. Optical transmittance spectra showed that there is a large blue shift of optical absorption edge in nanocrystalline GaAs1-xSbx-SiO2 composite films, as compared with that of the corresponding bulk semiconductor, which is due to the quantum confinement effect.

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This paper presents a novel efficient charge pump composed of low Vth metal-oxide-semiconductor (MOS) field effect transistors (FET) in the course of realizing radio frequency (RF) energy AC/DC conversion. The novel structure eliminates those defects caused by typical Schottky-diode charge pumps, which are dependent on specific processes and inconsistent in quality between different product batches. Our analyses indicate that an easy-fabricated, stable and efficient RF energy AC/DC charge pump can be conveniently implemented through reasonably configuring the MOS transistor aspect ratio, and other design parameters such as capacitance, multiplying stages to meet various demands on performance.

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Er-doped Si nanoclusters embedded in SiO2 (NCSO) films were prepared by radio frequency magnetron sputtering on either silicon or quartz substrates. A 1.16 mu m (1.08 eV) photoluminescence (PL) peak was observed from an Er-doped NCSO film deposited on a Si substrate. This 1.16 mu m peak is attributed to misfit dislocations at the NCSO/Si interface. The emission properties of the 1.16 mu m peak and its correlation with the Er3+ emission (1.54 mu m) have been studied in detail. The observed behavior suggests that the excitation mechanism of the 1.16 mu m PL is in a fashion similar to that shown for Er-doped Si nanoclusters embedded in a SiO2 matrix. (C) 2006 American Institute of Physics.

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High (42.5%) indium content GaInNAs/GaAs quantum wells with room temperature emission wavelength from 1.3 mu m to 1.5 mu m range were successfully grown by Radio Frequency Plasma Nitrogen source assisted Molecular Beam Epitaxy. The growth parameters of plasma power and N-2 How rate were optimized systematically to improve the material quality. Photoluminescence and transmission electron microscopy measurements showed that the optical and crystal quality of the 1.54 mu m GaInNAs/GaAs QWs was kept as comparable as that in 1.31 mu m.

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P-doped ZnO films were deposited on n-Si substrate by radio-frequency magnetron sputtering. Hall measurements revealed that the films annealed in situ at 750 degrees C in an oxygen ambient at a pressure of 1.3x10(-3)-3.9x10(-3) Pa showed p-type behavior with a hole concentration of 2.7x10(16)-2.2x10(17) cm(-3), a mobility of 4-13 cm(2)/V s, and a resistivity of 10.4-19.3 Omega cm. Films annealed at 750 degrees C in a vacuum or in oxygen ambient at higher pressures (5.2x10(-3) and 6.5x10(-3) Pa) showed n-type behavior. Additionally, the p-ZnO/n-Si heterojunction showed a diodelike I-V characteristic. Our results indicate that P-doped p-type ZnO films can be obtained by annealing in oxygen ambient at very low pressures. (c) 2006 American Institute of Physics.

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Sb-doped and undoped ZnO thin films were deposited on Si (100) substrates by radio frequency (RF) magnetron sputtering. X-ray diffraction (XRD) and scanning electron microscopy (SEM) analyses revealed that all the films had polycrystalline wurtzite structure and c-axis preferred orientation. Room temperature Hall measurements showed that the as-grown films were n-type and conducting (rho similar to 1-10 Omega cm). Annealing in a nitrogen ambient at 400 degrees C for 1 h made both samples highly resistive (rho > 10(3) Omega cm). Increasing the annealing temperature up to 800 C, the resistivity of the ttndoped ZnO film decreased gradually, but it increased for the Sb-doped ZnO film. In the end, the Sb-doped ZnO film annealed at 800 C became semi-insulating with a resistivity of 10(4)Omega cm. In addition, the effects of annealing treatment and Sb-doping on the structural and electrical properties are discussed. (c) 2006 Elsevier B.V. All rights reserved.