980 resultados para GROWN GAAS


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Tomato ( Lycopersicon esculentum Mill) is the leading vegetable in terms of production in Kenya. The Kenyan local market has a wide variety of tomato cultivars with a wide range of morphological and sensorial characteristics. However, information on the nutritional and postharvest quality of these varieties is lacking. The aim of this research was to investigate and identify tomato varieties of superior postharvest quality and recommend them to small and medium scale farmers. In this study, six tomato varieties were grown in a greenhouse and analyzed at three maturity stages (mature green, turning and red ripe). The tomatoes were analyzed at specific days after harvest and storage at room temperature (25o C). Percentage weight loss, color, respiration and ethylene production rates were analyzed to assess the postharvest quality of the tomatoes. The color was measured using a Minolta Chromameter while the respiration rate and ethylene production rates were determined using the static system approach. Color, weight loss, respiration and ethylene production rates were positively affected by storage time when harvested at the three maturity stages. The percentage weight loss of the tomato fruits was higher in the determinate varieties, and at the turning stage of maturity (3.8 %). Minor color changes were observed after storage of the tomatoes harvested at red stage for six days. Both rates of respiration and ethylene production were low, with the respiration rate ranging between 56-10 ml CO2 Kg-1h-1. The Chonto F1 variety had the highest rate of ethylene production (5.4 μL C2H4 Kg-1h-1) on the 4th day of storage after harvest at the red ripe stage. Overall, the indeterminate tomato varieties displayed better postharvest quality that can prolong the fruits shelf life for marketing. In turn, the turning stage of maturity proved to be a better stage to harvest tomatoes as the color development was more uniform.

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The electrical and photoconductive features of as-grown microwave-plasma-assisted chemical-vapour deposition (MPCVD) diamond films are studied in correlation with magnetic results obtained from electron paramagnetic resonance (EPR). Also, the morphology is analysed by atomic force microscopy (AFM) showing [111] crystals with a good uniformity of the deposit. The photoresponse as well the current-voltage features observed show an efficient photogeneration of carriers while the optoelectronic characteristics of the metal-diamond junction have an ideality factor of 1.6 together with a rectification ratio of about 10(4) at +/-2.5 V. The nature of the mechanisms responsible for the conduction is discussed. (C) 1998 Elsevier Science S.A.

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The authors discuss and demonstrate the growth of InN surface quantum dots on a high-In-content In0.73Ga0.27N layer, directly on a Si(111) substrate by plasma-assisted molecular beam epitaxy. Atomic force microscopy and transmission electron microscopy reveal uniformly distributed quantum dots with diameters of 10–40 nm, heights of 2–4 nm, and a relatively low density of ∼7 × 109 cm−2. A thin InN wetting layer below the quantum dots proves the Stranski-Krastanov growth mode. Near-field scanning optical microscopy shows distinct and spatially well localized near-infrared emission from single surface quantum dots. This holds promise for future telecommunication and sensing devices.

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This work reports on the growth of (In, Ga)N core−shell micro pillars by plasma-assisted molecular beam epitaxy using an ordered array of GaN cores grown by metal organic vapor phase epitaxy as a template. Upon (In, Ga)N growth, core−shell structures with emission at around 3.0 eV are formed. Further, the fabrication of a core−shell pin structure is demonstrated.

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This work reports on the selective area growth mechanism of green-emitting InGaN/GaN nanocolumns. The evolution of the morphology of the InGaN segment is found to depend critically on the nominal III/V ratio as well as the diameter of the GaN section. In addition, the In distribution inside the InGaN segment is found to depend on the local III/V and In/Ga ratios.

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Transmission electron microscopy and spatially resolved electron energy-loss spectroscopy have been applied to investigate the indium distribution and the interface morphology in axial (In,Ga)N/GaN nanowire heterostructures. The ordered axial (In,Ga)N/GaN nanowire heterostructures with an indium concentration up to 80% are grown by molecular beam epitaxy on GaN-buffered Si(111) substrates. We observed a pronounced lattice pulling effect in all the nanowire samples given in a broad transition region at the interface. The lattice pulling effect becomes smaller and the (In,Ga)N/GaN interface width is reduced as the indium concentration is increased in the (In,Ga)N section. The result can be interpreted in terms of the increased plastic strain relaxation via the generation of the misfit dislocations at the interface.

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We present results of scanning transmission electron tomography on GaN/(In,Ga)N/GaN nanocolumns (NCs) that grew uniformly inclined towards the patterned, semi-polar GaN( 112̄ 2 ) substrate surface by molecular beam epitaxy. For the practical realization of the tomographic experiment, the nanocolumn axis has been aligned parallel to the rotation axis of the electron microscope goniometer. The tomographic reconstruction allows for the determination of the three-dimensional indium distribution inside the nanocolumns. This distribution is strongly interrelated with the nanocolumn morphology and faceting. The (In,Ga)N layer thickness and the indium concentration differ between crystallographically equivalent and non-equivalent facets. The largest thickness and the highest indium concentration are found at the nanocolumn apex parallel to the basal planes.

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Pronounced electrocatalytic oxidation enhancement at the surface of InGaN layers and nanostructures directly grown on Si by plasma-assisted molecular beam epitaxy is demonstrated. The oxidation enhancement, probed with the ferro/ferricyanide redox couple increases with In content and proximity of nanostructure surfaces and sidewalls to the c-plane. This is attributed to the corresponding increase of the density of intrinsic positively charged surface donors promoting electron transfer. Strongest enhancement is for c-plane InGaN layers functionalized with InN quantum dots (QDs). These results explain the excellent performance of our InN/InGaN QD biosensors and water splitting electrodes for further boosting efficiency.

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The electrical and photoconductive features of as-grown microwave-plasma-assisted chemical-vapour deposition (MPCVD) diamond films are studied in correlation with magnetic results obtained from electron paramagnetic resonance (EPR). Also, the morphology is analysed by atomic force microscopy (AFM) showing [111] crystals with a good uniformity of the deposit. The photoresponse as well the current-voltage features observed show an efficient photogeneration of carriers while the optoelectronic characteristics of the metal-diamond junction have an ideality factor of 1.6 together with a rectification ratio of about 10(4) at +/-2.5 V. The nature of the mechanisms responsible for the conduction is discussed. (C) 1998 Elsevier Science S.A.

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Nursery grown seedlings are an essential part of the forestry industry. These seedlings are grown under high nutrient conditions caused by fertilization. Though grown in a controlled environment, symbionts such as ectomycorrhizal fungi (EcMF) are often found in these conditions. To examine the effects of EcMF in these conditions, colonized Picea glauca seedlings were collected from Toumey Nursery in Watersmeet, MI. After collection, the EcMF present were morphotyped, and seedlings with different morphotypes were divided equally into two treatment types- fertilized and unfertilized. Seedlings received treatment for one growing season. After that time, seedlings were collected, ectomycorrhizas identified using morphotyping and DNA sequencing, and seedlings were analyzed for differences in leaf nutrient concentration, content, root to shoot ratio, total biomass, and EcMF community structure. DNA sequencing identified 5 unique species groups- Amphinema sp. 1, Amphinema sp. 5, Thelephora terrestris, Sphaerosporella brunnea, and Boletus variipes. In the unfertilized treatment it was found that Amphinema sp. 1 strongly negatively impacted foliar N concentration. In fertilized seedlings, Thelephora terrestris had a strong negative impact on foliar phosphorus concentration, while Amphinema sp. 1 positively impacted foliar boron, magnesium, manganese, and phosphorus concentration. In terms of content, Amphinema sp. 1 led to significantly higher content of manganese and boron in fertilized treatments, as well as elevated phosphorus in unfertilized seedlings. Amphinema sp. 5 had a significant negative effect on phosphorus content. When examining root to shoot ratio and biomass, those seedlings with more non-mycorrhizal tips had a higher root to shoot ratio. Findings from the study shed light on the interactions of the species. Amphinema sp. 5 shows very different functionality than Amphinema sp. 1. Amphinema sp. 1 appears to have the highest positive effect on seedling nutrition when in both fertilized and unfertilized environments. Amphinema sp. 5 and T. terrestris appear to behave parasitically in both fertilized and unfertilized conditions.

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In this work, we investigate the influence of some growth parameters such as high microwave power ranging from 3.0 to 4.0 kW and N2 additive on the incorporation of bonded hydrogen defects in nanocrystalline diamond (NCD) films grown through a small amount of pure N2 addition into conventional 4% CH4/H2 plasma using a 5 kW microwave plasma CVD system. Incorporation form and content of hydrogen point defects in the NCD films produced with pure N2 addition was analyzed by employing Fourier-transform infrared (FTIR) spectroscopy for the first time. A large amount of hydrogen related defects was detected in all the produced NCD films with N2 additive ranging from 29 to 87 µm thick with grain size from 47 nm to 31 nm. Furthermore, a specific new H related sharp absorption peak appears in all the NCD films grown with pure N2/CH4/H2 plasma at high powers and becomes stronger at powers higher than 3.0 kW and is even stronger than the 2920 cm−1 peak, which is commonly found in CVD diamond films. Based on these experimental findings, the role of high power and pure nitrogen addition on the growth of NCD films including hydrogen defect formation is analyzed and discussed.

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The use of InGaAs metamorphic buffer layers (MBLs) to facilitate the growth of lattice-mismatched heterostructures constitutes an attractive approach to developing long-wavelength semiconductor lasers on GaAs substrates, since they offer the improved carrier and optical confinement associated with GaAs-based materials. We present a theoretical study of GaAs-based 1.3 and 1.55 μm (Al)InGaAs quantum well (QW) lasers grown on InGaAs MBLs. We demonstrate that optimised 1.3 μm metamorphic devices offer low threshold current densities and high differential gain, which compare favourably with InP-based devices. Overall, our analysis highlights and quantifies the potential of metamorphic QWs for the development of GaAs-based long-wavelength semiconductor lasers, and also provides guidelines for the design of optimised devices.

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In most agroecosystems, nitrogen (N) is the most important nutrient limiting plant growth. One management strategy that affects N cycling and N use efficiency (NUE) is conservation agriculture (CA), an agricultural system based on a combination of minimum tillage, crop residue retention and crop rotation. Available results on the optimization of NUE in CA are inconsistent and studies that cover all three components of CA are scarce. Presently, CA is promoted in the Yaqui Valley in Northern Mexico, the country´s major wheat-producing area in which from 1968 to 1995, fertilizer application rates for the cultivation of irrigated durum wheat (Triticum durum L.) at 6 t ha-1 increased from 80 to 250 kg ha-1, demonstrating the high intensification potential in this region. Given major knowledge gaps on N availability in CA this thesis summarizes the current knowledge of N management in CA and provides insights in the effects of tillage practice, residue management and crop rotation on wheat grain quality and N cycling. Major aims of the study were to identify N fertilizer application strategies that improve N use efficiency and reduce N immobilization in CA with the ultimate goal to stabilize cereal yields, maintain grain quality, minimize N losses into the environment and reduce farmers’ input costs. Soil physical and chemical properties in CA were measured and compared with those in conventional systems and permanent beds with residue burning focusing on their relationship to plant N uptake and N cycling in the soil and how they are affected by tillage and N fertilizer timing, method and doses. For N fertilizer management, we analyzed how placement, time and amount of N fertilizer influenced yield and quality parameters of durum and bread wheat in CA systems. Overall, grain quality parameters, in particular grain protein concentration decreased with zero-tillage and increasing amount of residues left on the field compared with conventional systems. The second part of the dissertation provides an overview of applied methodologies to measure NUE and its components. We evaluated the methodology of ion exchange resin cartridges under irrigated, intensive agricultural cropping systems on Vertisols to measure nitrate leaching losses which through drainage channels ultimately end up in the Sea of Cortez where they lead to algae blooming. A throughout analysis of N inputs and outputs was conducted to calculate N balances in three different tillage-straw systems. As fertilizer inputs are high, N balances were positive in all treatments indicating the risk of N leaching or volatilization during or in subsequent cropping seasons and during heavy rain fall in summer. Contrary to common belief, we did not find negative effects of residue burning on soil nutrient status, yield or N uptake. A labeled fertilizer experiment with urea 15N was implemented in micro-plots to measure N fertilizer recovery and the effects of residual fertilizer N in the soil from summer maize on the following winter crop wheat. Obtained N fertilizer recovery rates for maize grain were with an average of 11% very low for all treatments.

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In this study, we investigated the different responses of Spondias tuberosa (umbu) trees, which grow in two different ecological life zones in northeast Brazil: tropical wet and tropical arid ecosystems. We evaluated the responses of plants grown under humid and dry conditions by measuring the photosynthesis, water status, fluorescence parameters, carbon isotopes and antioxidant system activity. The higher net photosynthesis values were recorded contemporaneously with the lower VPD values. The highest internal-to-ambient CO2 concentration and the absence of typical changes in the fluorescence parameters suggested an onset of a nonstomatal limitation in the photosynthesis. Our results showed that umbu plants can adjust their antioxidant activity during the dry season as a defensive strategy against the deleterious effects of water stress. This evidence is supported by the observed modifications in the pigment concentrations, increased accumulation of hydrogen peroxide and malondialdehyde, high levels of electrolyte leakage, increased antioxidant activity, and decreased carbon isotope discrimination in the umbu trees during the dry season. Supported by multivariate analysis of variance, significantly effect of interaction between categorical months of collect and location predicts a strong ?dry season effect? on our dataset. Taken together, our data show that umbu trees grown in a wet tropical environment are more susceptible to drought, as compared with their tropical arid counterparts.

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Lignocelulose é o componente mais abundante do meio ambiente e recurso orgânico renovável no solo. Alguns fungos filamentosos têm desenvolvido a habilidade de degradar e utilizar celulose, hemicelulose e lignina como fonte de energia. O objetivo deste trabalho foi analisar o efeito de três fontes de nitrogênio (sulfato de amônio, nitrato de potássio e farelo de soja) na atividade enzimática de Lentinula edodes EF 50 utilizando como substrato serragem de E. benthamii. Foi aplicado um planejamento experimental de mistura com três repetições no ponto central constituído de sete tratamentos (T) de iguais concentrações em nitrogênio de sulfato de amônia, nitrato de potássio e farinha de soja cozida. Foram determinadas a atividade enzimática da avicelase, carboximetilcelulase, β-glicosidase, xilanases e manganês peroxidase. Foram avaliados o teor de umidade, pH, atividade de água (aw) e análise qualitativa do crescimento micelial em 8 tempos de cultivo. Os resultados mostraram efeito negativo na produção das enzimas nos tratamentos com máxima concentração de sulfato de amônia e nitrato de potássio. Os tratamentos com farinha de soja cozida expressaram maiores atividades enzimáticas, nos tempos de 3, 6 e 9 dias de cultivo exceto na atividade do manganês peroxidase. A maior produção foi observada no tratamento com sulfato de amônia e farinha de soja cozida (83.86 UI.L?1) em 20 dias de cultivo.