Linear chirp control of infrared signal in a biased semiconductor thin film

Ultrashort light-matter interactions between a linear chirped pulse and a biased semiconductor thin film GaAs are investigated. Using different chirped pulses, the dependence of infrared spectra on chirp rate is demonstrated for a 5 fs pulse. It is found that the infrared spectra can be controlled by the linear chirp of the pulse. Furthermore, the infrared spectral intensity could be enhanced by two orders of magnitude via appropriately choosing values of the linear chirp rates. Our results suggest a possible scheme to control the infrared signal.

The local-field corrective effect on Rabi oscillation of ultrashort pulse excitation in semiconductor GaAs

Rabi oscillation of the thin bulk semiconductor GaAs, which takes into account the effect of the local-field correction induced by the interacting excitons, is investigated by numerically solving the semiconductor Bloch equations. It is found, for a 2 pi few-cycle pulse excitation, that two incomplete Rabi-floppings emerge due to the competition between the Rabi frequency of the incident pulse and the internal-field matrices. Furthermore, for a sub-cycle 2 pi pulse excitation a complete Rabi-flopping can occur because of the absolute phase effect. We ascribe these characteristics of the Rabi oscillation to the renormalized Rabi frequency.

Third harmonic enhancement due to Fano interference in semiconductor quantum well

We investigate the emission spectra of the semiconductor quantum well for few-cycle and sub-cycle pulse exciting. We find that Fano interference may induce third harmonic enhancement. Third harmonic enhancement varies with the magnitude and duration of the incident pulse, and may be enhanced by approximately one order of magnitude for the low intensity region of the sub-cycle incident pulse exciting.

Investigation of the influence of the aberration induced by a plane interface on STED microscopy

The structure of the inhibition patterns is important to the stimulated emission depletion (STED) microscopy. Usually, Laguerre-Gaussian (LG) beam and the central zero-intensity patterns created by inserting phase masks in Gaussian beams are used as the erase beam in STED microscopy. Aberration is generated when focusing beams through an interface between the media of the mismatched refractive indices. By use of the vectorial integral, the effects of such aberration on the shape of depletion patterns and the size of fluorescence emission spot in the STED microscopy are studied. Results are presented as a comparison between the aberration-free case and the aberrated cases. (C) 2009 Optical Society of America

Synthesis and characterization of high-spin organic materials: prototypes for the polaronic ferromagnet

The design, synthesis and magnetic characterization of thiophene-based models for the polaronic ferromagnet are described. Synthetic strategies employing Wittig and Suzuki coupling were employed to produce polymers with extended π-systems. Oxidative doping using AsF_5 or I_2 produces radical cations (polarons) that are stable at room temperature. Magnetic characterization of the doped polymers, using SQUID-based magnetometry, indicates that in several instances ferromagnetic coupling of polarons occurs along the polymer chain. An investigation of the influence of polaron stability and delocalization on the magnitude of ferromagnetic coupling is pursued. A lower limit for mild, solution phase I_2 doping is established. A comparison of the variable temperature data of various polymers reveals that deleterious antiferromagnetic interactions are relatively insensitive to spin concentration, doping protocols or spin state. Comparison of the various polymers reveals useful design principles and suggests new directions for the development of magnetic organic materials. Novel strategies for solubilizing neutral polymeric materials in polar solvents are investigated.

The incorporation of stable bipyridinium spin-containing units into a polymeric high-spin array is explored. Preliminary results suggest that substituted diquat derivatives may serve as stable spin-containing units for the polaronic ferromagnet and are amenable to electrochemical doping. Synthetic efforts to prepare high-spin polymeric materials using viologens as a spin source have been unsuccessful.

Theory of ozone isotopic effects and various electron transfer reactions

Three separate topics, each stimulated by experiments, are treated theoretically in this dessertation: isotopic effects of ozone, electron transfer at interfaces, and intramolecular directional electron transfer in a supramolecular system.

The strange mass-independent isotope effect for the enrichment of ozone, which has been a puzzle in the literature for some 20 years, and the equally puzzling unconventional strong mass-dependent effect of individual reaction rate constants are studied as different aspects of a symmetry-driven behavior. A statistical (RRKM-based) theory with a hindered-rotor transition state is used. The individual rate constant ratios of recombination reactions at low pressures are calculated using the theory involving (1) small deviation from the statistical density of states for symmetric isotopomers, and (2) weak collisions for deactivation of the vibrationally excited ozone molecules. The weak collision and partitioning among exit channels play major roles in producing the large unconventional isotope effect in "unscrambled" systems. The enrichment studies reflect instead the non-statistical effect in "scrambled" systems. The theoretical results of low-pressure ozone enrichments and individual rate constant ratios obtained from these calculations are consistent with the corresponding experimental results. The isotopic exchange rate constant for the reaction ^(16)O + ^(18)O ^(18)O→+ ^(16)O ^(18)O + ^(18)O provides information on the nature of a variationally determined hindered-rotor transition state using experimental data at 130 K and 300 K. Pressure effects on the recombination rate constant, on the individual rate constant ratios and on the enrichments are also investigated. The theoretical results are consistent with the experimental data. The temperature dependence of the enrichment and rate constant ratios is also discussed, and experimental tests are suggested. The desirability of a more accurate potential energy surface for ozone in the transition state region is also noted.

Electron transfer reactions at semiconductor /liquid interfaces are studied using a tight-binding model for the semiconductors. The slab method and a z-transform method are employed in obtaining the tight-binding electronic structures of semiconductors having surfaces. The maximum electron transfer rate constants at Si/viologen^(2-/+) and InP /Me_(2)Fc^(+/O) interfaces are computed using the tight-binding type calculations for the solid and the extended-Huckel for the coupling to the redox agent at the interface. These electron transfer reactions are also studied using a free electron model for the semiconductor and the redox molecule, where Bardeen's method is adapted to calculate the coupling matrix element between the molecular and semiconductor electronic states. The calculated results for maximum rate constant of the electron transfer from the semiconductor bulk states are compared with the experimentally measured values of Lewis and coworkers, and are in reasonable agreement, without adjusting parameters. In the case of InP /liquid interface, the unusual current vs applied potential behavior is additionally interpreted, in part, by the presence of surface states.

Photoinduced electron transfer reactions in small supramolecular systems, such as 4-aminonaphthalimide compounds, are interesting in that there are, in principle, two alternative pathways (directions) for the electron transfer. The electron transfer, however, is unidirectional, as deduced from pH-dependent fluorescence quenching studies on different compounds. The role of electronic coupling matrix element and the charges in protonation are considered to explain the directionality of the electron transfer and other various results. A related mechanism is proposed to interpret the fluorescence behavior of similar molecules as fluorescent sensors of metal ions.

A quase conversação na comentosfera dos j-blogs: um estudo das interações na interface de comentários de quatro blogs jornalísticos institucionais

Este trabalho se situa na fronteira entre as áreas de Comunicação Social e Linguística e é voltado à investigação das interações ocorridas nos espaços dedicados à publicação de comentários de leitores em quatro blogs jornalísticos institucionais: Blog do Noblat, Blog MiriamLeitão.com, Blog do Reinaldo Azevedo e Blog do Josias de Souza. Com ele, pretende-se definir como cada leitor utiliza seus comentários para se relacionar com o jornalista autor do blog (o blogueiro), com outros leitores que também publicam suas opiniões (os leitores-comentaristas) e com o tópico tratado no texto (postagem) escrito pelo blogueiro. Além disso, considerando que autores da área de Comunicação Social discutem os blogs como um dispositivo amplamente conversacional, o propósito desta pesquisa é também esclarecer, à luz dos princípios da Análise da Conversação, se efetivamente ocorre uma conversação entre os participantes no ambiente de troca de mensagens dos blogs. Para a realização do estudo, foi compilado um corpus de 400 comentários cujo conteúdo demonstra a visão crítica de leitores dos blogs acima citados acerca de um mesmo tema: o apagão ocorrido em 10 de novembro de 2009 em 18 estados brasileiros. Tais mensagens foram trabalhadas a partir de um método predominantemente qualitativo e interpretativo, sendo que uma abordagem quantitativa também foi considerada para permitir uma visão mais abrangente e comparativa dos dados. Na ausência de um referencial teórico da Linguística que abrangesse os fenômenos interacionais percebidos nos comentários dos blogs, optou-se por desenvolver uma proposta de análise de base empírica, que norteou todo o desenvolvimento do trabalho. Entre as conclusões preliminares da pesquisa, pode-se dizer que, ao mesmo tempo em que os blogs inauguraram uma nova forma de relacionamento entre o jornalista e sua audiência, há indícios de grande parte dos leitores utilizem os blogs como um espaço restrito à publicação de opiniões isoladas, em vez de enxergá-lo como um ambiente com amplas possibilidades interativas, e, consequentemente, propício à discussão

Eros adormecido : violência e laço social na interface entre literatura e psicanálise?

Esta pesquisa objetivou discutir a violência e o laço social, tomando como fonte de inspiração a relação com o semelhante, desvelada na obra de Rubem Fonseca. A literatura é apreendida como espaço ético no qual os processos de subjetivação são expressos e forjados, dando forma ao mal-estar que a psicanálise institui como próprio do existir humano. Considerando a violência constituinte do dualismo pulsional Eros-Tanatos, hipotetiza-se que as trocas sociais, na atualidade, efetuam-se pelo ódio indiferenciado ao outro, reificando-o e destituindo-o de sua singularidade. As personagens de Rubem Fonseca protagonizam, juntamente com o cenário urbano, a tragédia contemporânea na qual a melancolia parece ser a tônica da trama coletiva e os atos violentos despropositados contra o outro, uma forma de resposta contra a desvitalização e a impotência subjetivas. Em um universo social caracterizado pela retração dos poderes regeneradores e unificadores de Eros, a erótica predominante se afirma pela violência em relação ao próximo, não posto no lugar de parceiro na construção da coletividade.

Rational design of zinc phosphide heterojunction photovoltaics

The prospect of terawatt-scale electricity generation using a photovoltaic (PV) device places strict requirements on the active semiconductor optoelectronic properties and elemental abundance. After reviewing the constraints placed on an "earth-abundant" solar absorber, we find zinc phosphide (α-Zn₃P₂) to be an ideal candidate. In addition to its near-optimal direct band gap of 1.5 eV, high visible-light absorption coefficient (>10⁴ cm^-1), and long minority-carrier diffusion length (>5 μm), Zn₃P₂ is composed of abundant Zn and P elements and has excellent physical properties for scalable thin-film deposition. However, to date, a Zn₃P₂ device of sufficient efficiency for commercial applications has not been demonstrated. Record efficiencies of 6.0% for multicrystalline and 4.3% for thin-film cells have been reported, respectively. Performance has been limited by the intrinsic p-type conductivity of Zn₃P₂ which restricts us to Schottky and heterojunction device designs. Due to our poor understanding of Zn₃P₂ interfaces, an ideal heterojunction partner has not yet been found.

The goal of this thesis is to explore the upper limit of solar conversion efficiency achievable with a Zn₃P₂ absorber through the design of an optimal heterojunction PV device. To do so, we investigate three key aspects of material growth, interface energetics, and device design. First, the growth of Zn₃P₂ on GaAs(001) is studied using compound-source molecular-beam epitaxy (MBE). We successfully demonstrate the pseudomorphic growth of Zn₃P₂ epilayers of controlled orientation and optoelectronic properties. Next, the energy-band alignments of epitaxial Zn₃P₂ and II-VI and III-V semiconductor interfaces are measured via high-resolution x-ray photoelectron spectroscopy in order to determine the most appropriate heterojunction partner. From this work, we identify ZnSe as a nearly ideal n-type emitter for a Zn₃P₂ PV device. Finally, various II-VI/Zn₃P₂ heterojunction solar cells designs are fabricated, including substrate and superstrate architectures, and evaluated based on their solar conversion efficiency.

The origin of the transverse relaxation time in optically excited semiconductor quantum wells

The origin of the transverse relaxation time in optically excited semiconductor quantum wells is investigated based on the vector property of the interband transition matrix elements. The dephasing rate due to carrier-carrier (CC) scattering is found to be equal to half of the common momentum relaxation rate. The analytical expression of the polarization dephasing due to CC scattering in two-dimension is established and the dependence of the dephasing rate Gamma(cc) on the carrier density N is determined to be Gamma(cc) = constant (.) N-1/2, which is used to explain the experimental results and provides a promising physical picture. (C) 2004 Elsevier B.V. All rights reserved.

I. Reactively sputtered Ti-Si-N thin films for diffusion barrier applications. II. Oxidation, diffusion and crystallization of an amorphous Zr_(60)Al_(15)Ni_(25) alloy.

Films of Ti-Si-N obtained by reactively sputtering a TiSi_2, a Ti_5Si_3, or a Ti_3Si target are either amorphous or nanocrystalline in structure. The atomic density of some films exceeds 10^23 at./cm^3. The room-temperature resistivity of the films increases with the Si and the N content. A thermal treatment in vacuum at 700 °C for 1 hour decreases the resistivity of the Ti-rich films deposited from the Ti_5Si_3 or the Ti_3Si target, but increases that of the Si-rich films deposited from the TiSi_2 target when the nitrogen content exceeds about 30 at. %.

Ti_(34)Si_(23)N_(43) deposited from the Ti_5Si_3 target is an excellent diffusion barrier between Si and Cu. This film is a mixture of nanocrystalline TiN and amorphous SiN_x. Resistivity measurement from 80 K to 1073 K reveals that this film is electrically semiconductor-like as-deposited, and that it becomes metal-like after an hour annealing at 1000 °C in vacuum. A film of about 100 nm thick, with a resistivity of 660 µΩcm, maintains the stability of Si n+p shallow junction diodes with a 400 nm Cu overlayer up to 850 °C upon 30 min vacuum annealing. When used between Si and Al, the maximum temperature of stability is 550 °C for 30 min. This film can be etched in a CF_4/O_2 plasma.

The amorphous ternary metallic alloy Zr_(60)Al_(15)Ni_(25) was oxidized in dry oxygen in the temperature range 310 °C to 410 °C. Rutherford backscattering and cross-sectional transmission electron microscopy studies suggest that during this treatment an amorphous layer of zirconium-aluminum-oxide is formed at the surface. Nickel is depleted from the oxide and enriched in the amorphous alloy below the oxide/alloy interface. The oxide layer thickness grows parabolically with the annealing duration, with a transport constant of 2.8x10^(-5) m^2/s x exp(-1.7 eV/kT). The oxidation rate is most likely controlled by the Ni diffusion in the amorphous alloy.

At later stages of the oxidation process, precipitates of nanocrystalline ZrO_2 appear in the oxide near the interface. Finally, two intermetallic phases nucleate and grow simultaneously in the alloy, one at the interface and one within the alloy.