厚颌鲂种群遗传结构及哑基因问题

中国科学院分类区系特别支持费资助

光照、温度及宿主粘液对河鲈锚首吸虫虫卵孵化的影响

光照、温度及宿主粘液对河鲈锚首吸虫虫卵孵化的影响夏晓勤，聂品，姚卫建（中国科学院水生生物研究所，武汉４３００７２）关键词河鲈锚首吸虫，虫卵孵化，鳜鱼ＥＦＦＥＣＴＳＯＦＬＩＧＨＴ，ＴＥＭＰＥＲＡＴＵＲＥＡＮＤＨＯＳＴＭＵＣＵＳＯＮＴＨＥＥＧＧＨＡＴＣＨ...

湖北绿球藻目新植物

本文报道采自湖北省绿球藻目的5个新种,即粗角四棘藻、六锥四角藻、钝尖月形藻、湖北胸甲藻和三角空心藻。

团头鲂血居吸虫病的病原及其防治的研究——包括一种新的描述

团头鲂血居吸虫病是1965年和1973年先后在湖北省浠水县鱼池发现。1.0—1.5寸大的鱼种往往因患此病而死亡。其病原体是文献中未报导过的两种血居吸虫,并一种命名为鲂血居吸虫新种Sanguinicola megalogramae sp.nov.另一种暂列为血居吸虫未定种Sanguincolasp。 较详细地观察和记述了鲂血居吸虫成虫的形态、生态,以及卵、毛蚴、尾蚴等的形态和发育情况。查清了鲂血居吸虫的中间宿主是一种扁卷螺——白旋螺 Gyraulus albus Muller,还进行了尾蚴对鱼苗的感染试验。

云南星云湖、杞麓湖大头鲤的生物学

本文是根据云南星云湖、杞麓湖中所产大头鲤进行一些生态习性的研究。大头鲤的年龄鉴定是依据鳞片上环片切割现象。依星云湖的标本实测平均体长,Ⅰ龄为135.12毫米,Ⅱ龄鱼为196.93毫米,Ⅲ龄鱼为241.92毫米,Ⅳ龄焦为288毫米。星云湖和杞麓湖大头鲤体长和体重的关系式分别为:W=0.00001283L~(3.0719),W=0.00002181L~(2.9895)。食性极为单纯,主要是以枝角类和桡足类为食。不同大小个体的食性差异不大。Ⅰ龄鱼部分达到性成熟,Ⅱ龄鱼全部性成熟。其中性成熟最小个体雌鱼体长为14

斑鳢和乌鳢寄生孢子虫的研究

<正> 关于寄生鳢属鱼类原生动物的研究,外国已有不少的文献,但在我国还没有关于这方面的资料。作者进行这一研究工作,目的是了解斑鳢(Ophiocephalus maculatus)和乌鳢(O.argus)两种淡水鱼的孢子虫种类的形态学,以及对寄主的关系,以供鱼病防治和有关寄生虫学方面工作者在理论和实践上的参考。本文记述的孢子虫共22种,其中已见于文献的6种,新种16种,并包括粘孢子虫一新属。其分类系统如下:

中国的鲌属和红鲌属鱼类的研究

<正> 一、绪言关于中国淡水鱼类的研究,如果从C.Linnaeus的记载算起,至今已超过一个半世纪了。在这个时期内,特别是前100年,全部工作几乎只限于种类的筒单描述。进行这些工作的鱼类学者,大抵都是外国人,他们绝大多数没有到过中国,一般仅凭从中国采得的少数标本,予以鉴定研究。个别早期作者,甚至往往只根据一幅鱼的绘图,就进行描述鉴定,创立新种。到二十世纪三十年代,才有我国学者从事本国鱼类的研究,开始比较系统的在全国一些主要河流进行鱼类调查。到四十年代止,可以说除边远地区外,我国的主要经济鱼类资源基本上都有

A new genus and species of freshwater monostiliferous hoplonemertean (Nemertea, Enopla) from the People's Republic of China

A new genus and species of freshwater monostiliferous hoplonemertean, Limnemertes poyangensis gen. et sp. nov., from Poyang Lake, People's Republic of China, is described and illustrated. The taxon is compared and contrasted with previously described freshwater hoplonemerteans. This is the fourth species of freshwater nemertean to be described from China and the first recorded from Poyang Lake.

Hole Spin Relaxation in an Ultrathin InAs Monolayer

We investigate the spin relaxation time of holes in an ultrathin neutral InAs monolayer (1.5 ML) and compare with that of electrons, using polarization-dependent time-resolved photoluminescence (TRPL) experiments. With excitation energies above the GaAs gap, we observe a rather slow relaxation of holes (tau(1h) = 196 +/- 17 ps) that is in the magnitude similar to electrons (tau(1e) = 354 +/- 32 ps) in this ultrathin sample. The results are in good agreement with earlier theoretical prediction, and the phonon scattering due to spin-orbit coupling is realized to play a dominant role in the carrier spin kinetics.

Electrolyte electroreflectance spectroscopy studies on the interfacial behavior of the near-surface In0.15Ga0.85As/GaAs quantum well electrode vertical bar non-aqueous electrolyte

Electrolyte electroreflectance spectra of the near-surface strained-layer In0.15Ga0.85As/GaAs double single-quantum-well electrode have been studied at different biases in non-aqueous solutions of ferrocene and acetylferrocene. The optical transitions, the Franz-Keldysh oscillations (FKOs) and the quantum confined Stark effects (QCSE) of In0.15Ga0.85As/GaAs quantum well electrodes are analyzed. Electric field strengths at the In0.15Ga0.85As/GaAs interface are calculated in both solutions by a fast Fourier transform analysis of FKOs. A dip is exhibited in the electric field strength versus bias (from 0 to 1.2 V) curve in ferrocene solution. A model concerning the interfacial tunneling transfer of electrons is used to explain the behavior of the electric field. (C) 2001 Elsevier Science B.V. All rights reserved.

Structural and optical characterization of InAs nanostructures grown on (001) and high index InP substrates

The effects of InP substrate orientations on self-assembled InAs quantum dots (QDs) have been investigated by molecular beam epitaxy (MBE). A comparison between atomic force microscopy (AFM) and photoluminescence (PL) spectra shows that a high density of smaller InAs islands can be obtained by using such high index substrates. On the other hand, by introducing a lattice-matched underlying In0.52Al0.24Ga0.24As layer, the InAs QDs can be much more uniform in size and have a great improvement in PL properties. More importantly, 1.55-mu m luminescence at room temperature (RT) can be realized in InAs QDs deposited on (001) InP substrate with underlying In0.52Al0.24Ga0.24As layer. (C) 2000 Elsevier Science B.V. All rights reserved.

High-density InAs nanowires realized in situ on (100) InP

High-density InAs nanowires embedded in an In0.52Al0.48As matrix are fabricated in situ by molecular beam epitaxy on (100) InP. The average cross section of the nanowires is 4.5 x 10 nm(2). The linear density is as high as 70 wires/mu m. The spatial alignment of the multilayer arrays exhibit strong anticorrelation in the growth direction. Large polarization anisotropic effect is observed in polarized photoluminescence measurements. (C) 1999 American Institute of Physics. [S0003-6951(99)04134-0].

Study on the oxygen concentration reduction in heavily Sb-doped silicon

It was determined that oxygen concentration in heavily Sb-doped silicon was about 40% lower than that in the lightly doped Czochralski grown silicon and decreased with increasing content of Sb by means of coincident elastic recoil detection analysis. Through thermodynamic calculation, the oxygen loss by evaporation from the free surface of melt is only due to the formation of SiO, and Sb2O3 evaporation can be neglected. The basic reason for oxygen concentration reduction in heavily Sb-doped CZSi was that oxygen solubility decreased when element Sb with larger radius doped degenerately into silicon crystal. (C) 1999 Elsevier Science B.V. All rights reserved.

AlGaN/GaN/InGaN/GaN DH-HEMTs structure with an AlN interlayer grown by MOCVD

A novel AlGaN/GaN/GaN/GaN double heterojunction high electron mobility transistors (DH-HEMTS) structure with an AlN interlayer on sapphire substrate has been grown by MOCVD. The structure featured a 6-10 nm In0.1Ga0.9N layer inserted between the GaN channel and GaN buffer. And wer also inserted one ultrathin. AlN interlayer into the Al/GaN/GaN interface, which significantly enhanced the mobility of two-dimensional electron gas (2DEG) existed in the GaN channel. AFM result of this structure shows a good surface morphology and a low dislocation density, with the root-mean-square roughness (RMS) of 0.196 nm for a scan area of 5 mu m x 5 mu m. Temperature dependent Hall measurement was performed on this sample, and a mobility as high as 1950 cm(2)/Vs at room temperature (RT) was obtained. The sheet carrier density was 9.89 x10(12) cm(2), and average sheet resistance of 327 Omega/sq was achieved. The mobility obtained in this paper is about 50% higher than other results of similar structures which have been reported. (c) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

AlGaN/AlN/GaN/InGaN/GaN DH-HEMTs with improved mobility grown by MOCVD

AlGaN/AlN/GaN/InGaN/GaN double heterojunction high electron mobility transistors (DH-HEMTs) structures with improved buffer isolation have been investigated. The structures were grown by MOCVD on sapphire substrate. AFM result of this structure shows a good surface morphology with the root-mean-square roughness (RMS) of 0.196 nm for a scan area of 5 mu mx5 mu m. A mobility as high as 1950 cm(2)/Vs with the sheet carrier density of 9.89x10(12) cm(-2) was obtained, which was about 50% higher than other results of similar structures which have been reported. Average sheet resistance of 327 Omega/sq was achieved. The HEMTs device using the materials was fabricated, and a maximum drain current density of 718.5 mA/mm, an extrinsic transconductance of 248 mS/mm, a current gain cutoff frequency of 16 GHz and a maximum frequency of oscillation 35 GHz were achieved.