Dynamic in situ optical and magneto-optical monitoring of the growth of Co-Pd multilayers

In situ ellipsometry and Kerr polarimetry have been used to follow the continuous evolution of the optical and magneto- optical properties of multiple layers of Co and Pd during their growth. Films were sputter deposited onto a Pd buffer layer on glass substrates up to a maximum of N = 10 bi-layer periods according to the scheme glass/Pd(10)Ar x (0.3Co/3Pd) (nm). Magnetic hysteresis measurements taken during the deposition consistently showed strong perpendicular anisotropy at all stages of film growth following the deposition of a single monolayer of Co. Magneto-optic signals associated with the normal-incidence polar Kerr effect indicated strong polarization of Pd atoms at both Co-Pd and Pd-Co interfaces and that the magnitude of the complex magneto-optic Voigt parameter and the magnetic moment of the Pd decrease exponentially with distance from the interface with a decay constant of 1.1 nm(- 1). Theoretical simulations have provided an understanding of the observations and allow the determination of the ultrathin- film values of the elements of the skew-symmetric permittivity tensor that describe the optical and magneto-optical properties for both CO and Pd. Detailed structure in the observed Kerr ellipticity shows distinct Pd-thickness-dependent oscillations with a spatial period of about 1.6 nm that are believed to be associated with quantum well levels in the growing Pd layer.

Dynamic, in situ optical, magnetic and magneto-optical monitoring of the growth of Co/Au and Pd/Co/Au multilayer systems

The growth of magnetron sputtered Co/Au and Pd/Co/Au superlattices on Au and Pd buffer layers, deposited onto glass substrates, has been monitored optically and magneto-optically in real time, using rotating analyser ellipsometry and Kerr polarimetry, at a wavelength of 633 nm. The magneto-optical traces, combined with ex situ and in situ hysteresis loops, provide a detailed and informative fingerprint of the optical and magnetic properties of the films as they evolve during growth. For Co/Au, oscillations in the polar magneto-optical effect developed during the deposition of An overlayers on Co and these may be attributed to quantum well states. However, the hysteresis measurements show that the magnetic field required to maintain saturation magnetization throughout the experiment was larger than available in situ, introducing a degree of confusion concerning the interpretation of the data. This problem was overcome by the incorporation of Pd layers into the Co/Au structure, thereby eliminating variation in magnetic orientation during growth of the Au layers as a contributory factor to the observations.

Effect of defects on optical phonon Raman spectra in SiC nanorods

Fabricated one-dimensional (1D) materials often have abundant structural defects. Experimental observation and numerical calculation indicate that the broken translation symmetry due to structural defects may play a more important role than the quantum confinement effect in the Raman features of optical phonons in polar semiconductor quantum wires such as SiC nanorods, (C) 1999 Elsevier Science Ltd. All rights reserved.

Optical processing devices and techniques for next generation optical networks

Este trabalho surge do interesse em substituir os nós de rede óptica baseados maioritariamente em electrónica por nós de rede baseados em tecnologia óptica. Espera-se que a tecnologia óptica permita maiores débitos binários na rede, maior transparência e maior eficiência através de novos paradigmas de comutação. Segundo esta visão, utilizou-se o MZI-SOA, um dispositivo semicondutor integrado hibridamente, para realizar funcionalidades de processamento óptico de sinal necessárias em nós de redes ópticas de nova geração. Nas novas redes ópticas são utilizados formatos de modulação avançados, com gestão da fase, pelo que foi estudado experimentalmente e por simulação o impacto da utilização destes formatos no desempenho do MZI-SOA na conversão de comprimento de onda e formato, em várias condições de operação. Foram derivadas regras de utilização para funcionamento óptimo. Foi também estudado o impacto da forma dos pulsos do sinal no desempenho do dispositivo. De seguida, o MZI-SOA foi utilizado para realizar funcionalidades temporais ao nível do bit e do pacote. Foi investigada a operação de um conversor de multiplexagem por divisão no comprimento de onda para multiplexagem por divisão temporal óptica, experimentalmente e por simulação, e de um compressor e descompressor de pacotes, por simulação. Para este último, foi investigada a operação com o MZI-SOA baseado em amplificadores ópticos de semicondutor com geometria de poço quântico e ponto quântico. Foi também realizado experimentalmente um ermutador de intervalos temporais que explora o MZI-SOA como conversor de comprimento de onda e usa um banco de linhas de atraso ópticas para introduzir no sinal um atraso seleccionável. Por fim, foi estudado analiticamente, experimentalmente e por simulação o impacto de diafonia em redes ópticas em diversas situações. Extendeu-se um modelo analítico de cálculo de desempenho para contemplar sinais distorcidos e afectados por diafonia. Estudou-se o caso de sinais muito filtrados e afectados por diafonia e mostrou-se que, para determinar correctamente as penalidades que ocorrem, ambos os efeitos devem ser considerados simultaneamente e não em separado. Foi estudada a escalabilidade limitada por diafonia de um comutador de intervalos temporais baseado em MZI-SOA a operar como comutador espacial. Mostrou-se também que sinais afectados fortemente por não-linearidades podem causar penalidades de diafonia mais elevadas do que sinais não afectados por não-linearidades. Neste trabalho foi demonstrado que o MZI-SOA permite construir vários e pertinentes circuitos ópticos, funcionando como bloco fundamental de construção, tendo sido o seu desempenho analisado, desde o nível de componente até ao nível de sistema. Tendo em conta as vantagens e desvantagens do MZI-SOA e os desenvolvimentos recentes de outras tecnologias, foram sugeridos tópicos de investigação com o intuito de evoluir para as redes ópticas de nova geração.

Dynamique de recombinaison dans les puits quantiques InGaN/GaN

Nous étudions la recombinaison radiative des porteurs de charges photogénérés dans les puits quantiques InGaN/GaN étroits (2 nm). Nous caractérisons le comportement de la photoluminescence face aux différentes conditions expérimentales telles la température, l'énergie et la puissance de l'excitation et la tension électrique appliquée. Ces mesures montrent que l'émission provient d'états localisés. De plus, les champs électriques, présents nativement dans ces matériaux, n'ont pas une influence dominante sur la recombinaison des porteurs. Nous avons montré que le spectre d'émission se modifie significativement et subitement lorsque la puissance de l'excitation passe sous un certain seuil. L'émission possède donc deux ``phases'' dont nous avons déterminé le diagramme. La phase adoptée dépend à la fois de la puissance, de la température et de la tension électrique appliquée. Nous proposons que la phase à basse puissance soit associée à un état électriquement chargé dans le matériau. Ensuite, nous avons caractérisé la dynamique temporelle de notre échantillon. Le taux de répétition de l'excitation a une influence importante sur la dynamique mesurée. Nous concluons qu'elle ne suit pas une exponentielle étirée comme on le pensait précédemment. Elle est exponentielle à court temps et suit une loi de puissance à grand temps. Ces deux régimes sont lié à un seul et même mécanisme de recombinaison. Nous avons développé un modèle de recombinaison à trois niveaux afin d'expliquer le comportement temporel de la luminescence. Ce modèle suppose l'existence de centres de localisation où les porteurs peuvent se piéger, indépendamment ou non. L'électron peut donc se trouver sur un même centre que le trou ou sur n'importe quel autre centre. En supposant le transfert des porteurs entre centres par saut tunnel on détermine, en fonction de la distribution spatiale des centres, la dynamique de recombinaison. Ce modèle indique que la recombinaison dans les puits InGaN/GaN minces est liée à des agglomérats de centre de localisation.

Étude des mécanismes de capture et de fuite des excitons dans les boîtes quantiques d'InAs/InP

Mémoire numérisé par la Division de la gestion de documents et des archives de l'Université de Montréal

Études des fuites excitoniques dans des familles de boîtes quantiques d'InAs/InP par PLRT par addition de fréquences

Ce mémoire porte sur les mécanismes de relaxation et de fuite des excitons dans des systèmes de boîtes quantiques(BQs) d’InAs/InP. Les systèmes sont composés d’un sub- strat volumique d’InP, appelé matrice (M), d’un puits quantique d’InAs, nommé couche de mouillage (CM), et des familles de BQs d’InAs. La distinction entre les familles est faite par le nombre de monocouche d’épaisseur des boîtes qui sont beaucoup plus larges que hautes. Une revue de littérature retrace les principaux mécanismes de relaxation et de fuite des excitons dans les systèmes. Ensuite, différents modèles portant sur la fuite thermique des excitons des BQs sont comparés. Les types de caractérisations déjà produites et les spécifications des croissances des échantillons sont présentés. L’approche adoptée pour ce mémoire a été de caractériser temporellement la dynamique des BQs avec des mesures d’absorbtion transitoire et de photoluminescence résolue en temps (PLRT) par addition de fréquences. L’expérience d’absorption transitoire n’a pas fait ressortir de résultats très probants, mais elle est expliquée en détails. Les mesures de PLRT ont permis de suivre en température le temps de vie effectif des excitons dans des familles de BQs. Ensuite, avec un modèle de bilan détaillé, qui a été bien explicité, il a été possible d’identifier le rôle de la M et de la CM dans la relaxation et la fuite des excitons dans les BQs. Les ajustements montrent plus précisément que la fuite de porteurs dans les BQs se fait sous la forme de paires d’électrons-trous corrélées.

Topological order in a broken-symmetry state

À travers cette thèse, nous revisitons les différentes étapes qui ont conduit à la découverte des isolants topologiques, suite à quoi nous nous penchons sur la question à savoir si une phase topologiquement non-triviale peut coexister avec un état de symétrie brisée. Nous abordons les concepts les plus importants dans la description de ce nouvel état de la matière, et tentons de comprendre les conséquences fascinantes qui en découlent. Il s’agit d’un champ de recherche fortement alimenté par la théorie, ainsi, l’étude du cadre théorique est nécessaire pour atteindre une compréhension profonde du sujet. Le chapitre 1 comprend un retour sur l’effet de Hall quantique, afin de motiver les sections subséquentes. Le chapitre 2 présente la première réalisation d’un isolant topologique à deux dimensions dans un puits quantique de HgTe/CdTe, suite à quoi ces résultats sont généralisés à trois dimensions. Nous verrons ensuite comment incorporer des principes de topologie dans la caractérisation d’un système spécifique, à l’aide d’invariants topologiques. Le chapitre 3 introduit le premier dérivé de l’état isolant topologique, soit l’isolant topologique antiferromagnétique (ITAF). Après avoir motivé théoriquement le sujet et introduit un invariant propre à ce nouvel état ITAF, qui est couplé à l’ordre de Néel, nous explorons, dans les chapitres 4 et 5, deux candidats de choix pour la phase ITAF : GdBiPt et NdBiPt.

Growth and Characterization of ZnO based Heterojunction diodes and ZnO Nanostructuresby Pulsed Laser Ablation

Transparent conducting oxides (TCO’s) have been known and used for technologically important applications for more than 50 years. The oxide materials such as In2O3, SnO2 and impurity doped SnO2: Sb, SnO2: F and In2O3: Sn (indium tin oxide) were primarily used as TCO’s. Indium based oxides had been widely used as TCO’s for the past few decades. But the current increase in the cost of indium and scarcity of this material created the difficulty in obtaining low cost TCO’s. Hence the search for alternative TCO material has been a topic of active research for the last few decades. This resulted in the development of various binary and ternary compounds. But the advantages of using binary oxides are the easiness to control the composition and deposition parameters. ZnO has been identified as the one of the promising candidate for transparent electronic applications owing to its exciting optoelectronic properties. Some optoelectronics applications of ZnO overlap with that of GaN, another wide band gap semiconductor which is widely used for the production of green, blue-violet and white light emitting devices. However ZnO has some advantages over GaN among which are the availability of fairly high quality ZnO bulk single crystals and large excitonic binding energy. ZnO also has much simpler crystal-growth technology, resulting in a potentially lower cost for ZnO based devices. Most of the TCO’s are n-type semiconductors and are utilized as transparent electrodes in variety of commercial applications such as photovoltaics, electrochromic windows, flat panel displays. TCO’s provide a great potential for realizing diverse range of active functions, novel functions can be integrated into the materials according to the requirement. However the application of TCO’s has been restricted to transparent electrodes, ii notwithstanding the fact that TCO’s are n-type semiconductors. The basic reason is the lack of p-type TCO, many of the active functions in semiconductor originate from the nature of pn-junction. In 1997, H. Kawazoe et al reported the CuAlO2 as the first p-type TCO along with the chemical design concept for the exploration of other p-type TCO’s. This has led to the fabrication of all transparent diode and transistors. Fabrication of nanostructures of TCO has been a focus of an ever-increasing number of researchers world wide, mainly due to their unique optical and electronic properties which makes them ideal for a wide spectrum of applications ranging from flexible displays, quantum well lasers to in vivo biological imaging and therapeutic agents. ZnO is a highly multifunctional material system with highly promising application potential for UV light emitting diodes, diode lasers, sensors, etc. ZnO nanocrystals and nanorods doped with transition metal impurities have also attracted great interest, recently, for their spin-electronic applications This thesis summarizes the results on the growth and characterization of ZnO based diodes and nanostructures by pulsed laser ablation. Various ZnO based heterojunction diodes have been fabricated using pulsed laser deposition (PLD) and their electrical characteristics were interpreted using existing models. Pulsed laser ablation has been employed to fabricate ZnO quantum dots, ZnO nanorods and ZnMgO/ZnO multiple quantum well structures with the aim of studying the luminescent properties.

Growth of metal and semiconductor nanostructures for nonlinear optical applications

Nonlinear optics has been a rapidly growing field in recent decades since the invention of lasers. The systematic progress in the laser technology increases our efficiency in the generation and control of coherent optical radiations. Nonlinear optics is based on the study ofeffects and phenomena related to the interaction of intense coherent light radiation with matter. Compared to other light sources laser radiation can provide high directionality, high monochromaticiry, high brightness and high photon degeneracy. At such a very intense incident beam, the matter responds in a nonlinear manner to the incident radiation fields, which endows the media :1 characteristic to change the refractive index or absorption coe fflcient of the media or the wavelength, or the frequency of the incident electromagnetic waves. This thesis encompasses the fabrication of nonlinear optical devices based on semiconductor and metal nanostructures. The presented work focus on the experimental and theoretical discussions on nonlinear optical effects especially nonlinear absorption and refraction exhibitted by metal and semiconductor nanostructures

GaInAsP-basierende Resonatorstrukturen

Physikalische Grundlagenforschung und anwendungsorientierte physikalische Forschung auf den Gebieten nanoskaliger kristalliner und amorpher fester Körper haben in vielfacher Weise eine große Bedeutung. Neben dem Verständnis für die Struktur der Materie und die Wechselwirkung von Objekten von der Größe einiger Atome ist die Erkenntnis über die physikalischen Eigenschaften nanostrukturierter Systeme von hohem Interesse. Diese Forschung eröffnet die Möglichkeit, die mit der Mikroelektronik begonnene Miniaturisierung fortzusetzen und wird darüber hinaus neue Anwendungsfelder eröffnen. Das Erarbeiten der physikalischen Grundlagen der Methoden zur Herstellung und Strukturierung ist dabei zwingend notwendig, da hier Wirkungsprinzipien dominieren, die erst bei Strukturgrößen im Nanometerbereich auftreten oder hinreichend stark ausgeprägt sind. Insbesondere Halbleitermaterialien sind hier von großem Interesse. Die in dieser Arbeit untersuchten Resonatorstrukturen, die auf dem kristallinen Verbindungshalbleitermaterial GaInAsP/InP basieren, erschließen wichtige Anwendungsfelder im Bereich der optischen Datenübertragung sowie der optischen Sensorik. Hergestellt wird das Halbleitermaterial mit der Metallorganischen Gasphasenepitaxie. Die experimentell besimmten Kenngrößen lassen Rückschlüsse auf die Güte der Materialien, die quantenmechanischen Wirkungsprinzipien und die Bauelementcharakteristik zu und führen zu optimal angepassten Kristallstrukturen. Auf Basis dieser optimierten Materialien wurde ein durchstimmbarer Fabry-Perot-Filter hergestellt, der aus einer Kombination aus InP-Membranen und Luftspalten besteht und elektromechanisch aktuiert werden kann. Das GaInAsP dient hierbei als wenige hundert nm dicke Opferschicht, die ätztechnisch hochselektiv beseitigt wird. Die Qualität der Grenzflächen zum InP ist entscheidend für die Qualität der freigeätzten Kavitäten und damit für die mechanische Gesamtstabilität der Struktur. Der in dieser Arbeit beschriebene Filter hat eine Zentralwellenlänge im Bereich von 1550 nm und weist einen Durchstimmbereich von 221 nm auf. Erzielt wurde dieser Wert durch ein konsistentes Modell der wirkenden Verspannungskomponenten und einer optimierten epitaktischen Kontrolle der Verspannungsparameter. Das realisierte Filterbauelement ist vielversprechend für den Einsatz in der optischen Kommunikation im Bereich von WDM (wavelength division multiplexing) Anwendungen. Als weitere Resonatorstrukur wurde ein Asymmetrisch gekoppelter Quantenfilm als optisch aktives Medium, bestehend aus GaInAsP mit variierender Materialkomposition und Verspannung, untersucht, um sein Potential für eine breitbandige Emission zu untersuchen und mit bekannten Modellen zu vergleichen. Als Bauelementdesign wurde eine kantenemittierende Superlumineszenzleuchtdiode gewählt. Das Ergebnis ist eine Emissionskurve von 100 nm, die eine höhere Unabhängigkeit vom Injektionsstrom aufweist als andere bekannte Konzepte. Die quantenmechanischen Wirkungsprinzipien - im wesentlichen die Kopplung der beiden asymmetrischen Potentialtöpfe und die damit verbundene Kopplung der Wellenfunktionen - werden qualitativ diskutiert. Insgesamt bestätigt sich die Eignung des Materials GaInAsP auch für neuartige, qualitativ höchst anspruchsvolle Resonatorstrukturen und die Bedeutung der vorgestellten und untersuchten Resonatorkonzepte. Die vorgestellten Methoden, Materialien und Bauelemente liefern aufgrund ihrer Konzeption und der eingehenden experimentellen Untersuchungen einen Beitrag sowohl zu den zugrunde liegenden mechanischen, optoelektronischen und quantenmechanischen Wirkungsprinzipien der Strukturen, als auch zur Realisierung neuer optoelektronischer Bauelemente.

High-Speed Semiconductor Lasers based on Low-Dimensional Active Materials for Optical Telecommunication

The scope of this work is the fundamental growth, tailoring and characterization of self-organized indium arsenide quantum dots (QDs) and their exploitation as active region for diode lasers emitting in the 1.55 µm range. This wavelength regime is especially interesting for long-haul telecommunications as optical fibers made from silica glass have the lowest optical absorption. Molecular Beam Epitaxy is utilized as fabrication technique for the quantum dots and laser structures. The results presented in this thesis depict the first experimental work for which this reactor was used at the University of Kassel. Most research in the field of self-organized quantum dots has been conducted in the InAs/GaAs material system. It can be seen as the model system of self-organized quantum dots, but is not suitable for the targeted emission wavelength. Light emission from this system at 1.55 µm is hard to accomplish. To stay as close as possible to existing processing technology, the In(AlGa)As/InP (100) material system is deployed. Depending on the epitaxial growth technique and growth parameters this system has the drawback of producing a wide range of nano species besides quantum dots. Best known are the elongated quantum dashes (QDash). Such structures are preferentially formed, if InAs is deposited on InP. This is related to the low lattice-mismatch of 3.2 %, which is less than half of the value in the InAs/GaAs system. The task of creating round-shaped and uniform QDs is rendered more complex considering exchange effects of arsenic and phosphorus as well as anisotropic effects on the surface that do not need to be dealt with in the InAs/GaAs case. While QDash structures haven been studied fundamentally as well as in laser structures, they do not represent the theoretical ideal case of a zero-dimensional material. Creating round-shaped quantum dots on the InP(100) substrate remains a challenging task. Details of the self-organization process are still unknown and the formation of the QDs is not fully understood yet. In the course of the experimental work a novel growth concept was discovered and analyzed that eases the fabrication of QDs. It is based on different crystal growth and ad-atom diffusion processes under supply of different modifications of the arsenic atmosphere in the MBE reactor. The reactor is equipped with special valved cracking effusion cells for arsenic and phosphorus. It represents an all-solid source configuration that does not rely on toxic gas supply. The cracking effusion cell are able to create different species of arsenic and phosphorus. This constitutes the basis of the growth concept. With this method round-shaped QD ensembles with superior optical properties and record-low photoluminescence linewidth were achieved. By systematically varying the growth parameters and working out a detailed analysis of the experimental data a range of parameter values, for which the formation of QDs is favored, was found. A qualitative explanation of the formation characteristics based on the surface migration of In ad-atoms is developed. Such tailored QDs are finally implemented as active region in a self-designed diode laser structure. A basic characterization of the static and temperature-dependent properties was carried out. The QD lasers exceed a reference quantum well laser in terms of inversion conditions and temperature-dependent characteristics. Pulsed output powers of several hundred milli watt were measured at room temperature. In particular, the lasers feature a high modal gain that even allowed cw-emission at room temperature of a processed ridge wave guide device as short as 340 µm with output powers of 17 mW. Modulation experiments performed at the Israel Institute of Technology (Technion) showed a complex behavior of the QDs in the laser cavity. Despite the fact that the laser structure is not fully optimized for a high-speed device, data transmission capabilities of 15 Gb/s combined with low noise were achieved. To the best of the author`s knowledge, this renders the lasers the fastest QD devices operating at 1.55 µm. The thesis starts with an introductory chapter that pronounces the advantages of optical fiber communication in general. Chapter 2 will introduce the fundamental knowledge that is necessary to understand the importance of the active region`s dimensions for the performance of a diode laser. The novel growth concept and its experimental analysis are presented in chapter 3. Chapter 4 finally contains the work on diode lasers.

Spectroscopic evidence of extended states in quantized Hall phase of weakly coupled GaAs/AlGaAs multi-layers

The influence of the interlayer coupling on formation of the quantized Hall conductor phase at the filling factor v = 2 was studied in the multi-layer GaAs/AlGaAs heterostructures. The disorder broadened Gaussian photoluminescence line due to the localized electrons was found in the quantized Hall phase of the isolated multi-quantum well structure. On the other hand, the quantized Hall phase of the weakly coupled multi-layers emitted an unexpected asymmetrical line similar to that one observed in the metallic electron systems. We demonstrated that the observed asymmetry is caused by a partial population of the extended electron states formed in the quantized Hall conductor phase due to the interlayer percolation. A sharp decrease of the single-particle scattering time associated with these extended states was observed at the filling factor v = 2. (c) 2007 Elsevier B.V. All rights reserved.

Gel'fand-Levitan equation for deletion of states from Coulomb spectra

The Gel'fand-Levitan formalism is used to study how a selected set of bound states can be eliminated from the spectrum of the Coulomb potential and also how to construct a bound state in the Coulomb continuum. It is demonstrated that a sizeable quantum well can be produced by deleting a large number of levels from the s spectral series and the edge of the Coulomb potential alone can support the von Neumann-Wigner states in the continuum. © 1998 Elsevier Science B.V.

Investigação óptica de pontos quânticos de InAs confinados em poços quânticos de In0,15Ga0,85As

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)