Spectroscopic evidence of extended states in quantized Hall phase of weakly coupled GaAs/AlGaAs multi-layers


Autoria(s): POUSSEP, Iouri; GUIMARÃES, Francisco Eduardo Gontijo; Arakaki, Haroldo; SOUZA, Carlos Alberto de
Contribuinte(s)

UNIVERSIDADE DE SÃO PAULO

Data(s)

20/10/2012

20/10/2012

2008

Resumo

The influence of the interlayer coupling on formation of the quantized Hall conductor phase at the filling factor v = 2 was studied in the multi-layer GaAs/AlGaAs heterostructures. The disorder broadened Gaussian photoluminescence line due to the localized electrons was found in the quantized Hall phase of the isolated multi-quantum well structure. On the other hand, the quantized Hall phase of the weakly coupled multi-layers emitted an unexpected asymmetrical line similar to that one observed in the metallic electron systems. We demonstrated that the observed asymmetry is caused by a partial population of the extended electron states formed in the quantized Hall conductor phase due to the interlayer percolation. A sharp decrease of the single-particle scattering time associated with these extended states was observed at the filling factor v = 2. (c) 2007 Elsevier B.V. All rights reserved.

Identificador

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, v.40, n.5, p.1439-1441, 2008

1386-9477

http://producao.usp.br/handle/BDPI/29801

10.1016/j.physe.2007.09.036

http://dx.doi.org/10.1016/j.physe.2007.09.036

Idioma(s)

eng

Publicador

ELSEVIER SCIENCE BV

Relação

Physica E-low-dimensional Systems & Nanostructures

Direitos

restrictedAccess

Copyright ELSEVIER SCIENCE BV

Palavras-Chave #quantum Hall effect #multi-layers #SURFACE-STATES #Nanoscience & Nanotechnology #Physics, Condensed Matter
Tipo

article

proceedings paper

publishedVersion