860 resultados para electronic configuration
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The aim of this paper is to expand on previous quantitative and qualitative research into the use of electronic information resources and its impact on the information behaviour of academics at Catalan universities.
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Development of new technologies in the field of library and information science especially in academic libraries has resulted in the need for library staff to be flexible in adopting new skills and levels of awareness. In addition to core technology skills, importance is to be given to other skills in communication, management, etc. This paper attempts to describe in brief the competencies and skills required for an academic library professional in the digital era .
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Roughness and defects induced on few-layer graphene (FLG) irradiated by Ar+ ions at different energies were investigated using X-ray photoemission spectroscopy (XPS) and atomic force microscopy techniques. The results provide direct experimental evidence of ripple formation, sp2 to sp3 hybridized carbon transformation, electronic damage, Ar+ implantation, unusual defects and edge reconstructions in FLG, which depend on the irradiation energy. In addition, shadowing effects similar to those found in oblique-angle growth of thin films were seen. Reliable quantification of the transition from the sp2-bonding to sp3-hybridized state as a result of Ar+ ion irradiation is achieved from the deconvolution of the XPS C (1s) peak. Although the ion irradiation effect is demonstrated through the shape of the derivative of the Auger transition C KVV spectra, we show that the D parameter values obtained from these spectra which are normally used in the literature fail to account for the sp2 to sp3 hybridization transition. In contrast to what is known, it is revealed that using ion irradiation at large FLG sample tilt angles can lead to edge reconstructions. Furthermore, FLG irradiation by low energy of 0.25 keV can be a plausible way of peeling graphene layers without the need of Joule heating reported previously
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Effect of chlorine doping on the opto-electronic properties of β-In2S3 thin film, deposited by spray pyrolysis technique is studied for the first time. Chlorine was incorporated in the spray solution, using HCl. Pristine sample prepared using In(NO3)3 and thiourea as the precursors showed very low photosensitivity. But upon adding optimum quantity of chlorine, the photosensitivity increased by 3 orders. X-ray analysis revealed that crystallinity was also increasing up to this optimum level of Cl concentration. It was also observed that samples with high photosensitivity were having higher band gap. The present study proved that doping with chlorine was beneficial as this could result in forming crystalline and photosensitive films of indium sulfide.
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The first chapter of the thesis gives a general introduction about flexible electronics, dielectrics and composites. The recent developments in flexible electronics also discussed in this chapter. The preparation and characterization techniques used for the butyl rubber ceramic composites are given in chapter 2. The synthesis and characterization of butyl rubber filled with low permittivity ceramic composites are described in chapter 3. The chapter 4 deals with the synthesis and characterization of butyl rubber-high permittivity ceramic composites. The effect of high permittivity ceramic fillers such as TiO2, Sr2Ce2Ti5O15 and SrTiO3 on dielectric, thermal and mechanical properties was studied. The present investigation deals with synthesis, characterization and properties of butyl rubber composites with low, high and very high ceramic fillers and also the effect of particle size on dielectric, thermal and mechanical properties of selected composites.
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Die relativistische Multikonfigurations Dirac-Fock (MCDF) Methode ist gegenwärtig eines der am häufigsten benutzten Verfahren zur Berechnung der elektronischen Struktur und der Eigenschaften freier Atome. In diesem Verfahren werden die Wellenfunktionen ausgewählter atomarer Zustände als eine Linearkombination von sogenannten Konfigurationszuständen (CSF - Configuration State Functions) konstruiert, die in einem Teilraum des N-Elektronen Hilbert-Raumes eine (Vielteilchen-)Basis aufspannen. Die konkrete Konstruktion dieser Basis entscheidet letzlich über die Güte der Wellenfunktionen, die üblicherweise mit Hilfe einer Variation des Erwartungswertes zum no-pair Dirac-Coulomb Hamiltonoperators gewonnen werden. Mit Hilfe von MCDF Wellenfunktionen können die dominanten relativistischen und Korrelationseffekte in freien Atomen allgemein recht gut erfaßt und verstanden werden. Außer der instantanen Coulombabstoßung zwischen allen Elektronenpaaren werden dabei auch die relativistischen Korrekturen zur Elektron-Elektron Wechselwirkung, d.h. die magnetischen und Retardierungsbeiträge in der Wechselwirkung der Elektronen untereinander, die Ankopplung der Elektronen an das Strahlungsfeld sowie der Einfluß eines ausgedehnten Kernmodells erfaßt. Im Vergleich mit früheren MCDF Rechnungen werden in den in dieser Arbeit diskutierten Fallstudien Wellenfunktionsentwicklungen verwendet, die um 1-2 Größenordnungen aufwendiger sind und daher systematische Untersuchungen inzwischen auch an Atomen mit offenen d- und f-Schalen erlauben. Eine spontane Emission oder Absorption von Photonen kann bei freien Atomen theoretisch am einfachsten mit Hilfe von Übergangswahrscheinlichkeiten erfaßt werden. Solche Daten werden heute in vielen Forschungsbereichen benötigt, wobei neben den traditionellen Gebieten der Fusionsforschung und Astrophysik zunehmend auch neue Forschungsrichtungen (z.B. Nanostrukturforschung und Röntgenlithographie) zunehmend ins Blickfeld rücken. Um die Zuverlässigkeit unserer theoretischen Vorhersagen zu erhöhen, wurde in dieser Arbeit insbesondere die Relaxation der gebundenen Elektronendichte, die rechentechnisch einen deutlich größeren Aufwand erfordert, detailliert untersucht. Eine Berücksichtigung dieser Relaxationseffekte führt oftmals auch zu einer deutlich besseren Übereinstimmung mit experimentellen Werten, insbesondere für dn=1 Übergänge sowie für schwache und Interkombinationslinien, die innerhalb einer Hauptschale (dn=0) vorkommen. Unsere in den vergangenen Jahren verbesserten Rechnungen zu den Wellenfunktionen und Übergangswahrscheinlichkeiten zeigen deutlich den Fortschritt bei der Behandlung komplexer Atome. Gleichzeitig kann dieses neue Herangehen künftig aber auch auf (i) kompliziertere Schalensstrukturen, (ii) die Untersuchung von Zwei-Elektronen-ein-Photon (TEOP) Übergängen sowie (iii) auf eine Reihe weiterer atomarer Eigenschaften übertragen werden, die bekanntermaßen empflindlich von der Relaxation der Elektronendichte abhängen. Dies sind bspw. Augerzerfälle, die atomare Photoionisation oder auch strahlende und dielektronische Rekombinationsprozesse, die theoretisch bisher nur selten überhaupt in der Dirac-Fock Näherung betrachtet wurden.
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The electronic properties of neutral and ionized divalent-metal clusters have been studied using a microscopic theory, which takes into account the interplay between van der Waals (vdW) and covalent bonding in the neutral clusters, and the competition between hole delocalization and polarization energy in the ionized clusters. By calculating the ground-state energies of neutral and ionized. Hg_n clusters, we determine the size dependence of the bond character and the ionization potential I_p(n). For neutral Hg_n clusters we obtain a transition from van del Waals to covalent behaviour at the critical size n_c ~ 10-20 atoms. Results for I_p(Hg_n) with n \le 20 are in good agreement with experiments, and suggest that small Hg_n^+ clusters can be viewed as consisting of a positive trimer core Hg_3^+ surrounded by n - 3 polarized neutral atoms.
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The transition from van der Waals to covalent bonding, which is expected to occur in divalent-metal clusters with increasing cluster size, is discussed. We propose a model which takes into account, within the same electronic theory, the three main competing contributions, namely the kinetic energy of the electrons, the Coulomb interactions between electrons, and the s \gdw p intraatomic transitions responsible for van der Waals like bonding. The model is solved by taking into account electron correlations using a generalized Gutzwiller approximation (slave boson method). The occurrence of electron localization is studied as a function of the interaction parameters and cluster size.
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Energies of electronic K X-rays in muonic atoms were calculated for muons in various outer orbitals and for different numbers of electrons. Energy shifts were obtained with respect to characteristic X-rays belonging to nuclear charge (Z - 1) and their possible observation is discussed. The shifts in muonic Sn as an example amount to 19, 37, and 59 eV for the muon in 5g, 6h, and 7i states respectively. However, shifts due to the number of electrons present and the electron vacancy distribution in the L-shell are significantly larger. Accurate measurements of the K X-ray energies would therefore enable us to learn more about the electronic structure during the muonic cascade.
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The interatomic potential of the system I - I at intermediate and small distances is calculated from atomic DFS electron densities within a statistical model. Structures in the potential, due to the electronic shells, are investigated. Calculations of the elastic differential scattering cross section for small angles and several keV impact energies show a detailed peak pattern which can be correlated to individual electronic shell interaction.