SeP hole injection layer for devices based on organic materials

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Investigação da condução elétrica em fitas duplas de dna imobilizadas em eletrodos de ouro por medidas eletroquímicas

Pós-graduação em Química - IQ

Desenvolvimento de dispositivos eletrônico-orgânicos e sua aplicação como sensores em meio aquoso

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Phenomenological model for the interpretation of impedance/admittance spectroscopy results in polymer light-emitting electrochemical cells

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Sprayed films of europium complexes toward light conversion devices

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Investigations on PVP/Y3BO6:Eu3+, a red Luminescent composite for lighting devices based on near UV-LEDs

This work deals with a red phosphor. Y3BO6:Eu3+, and its corresponding poly(N-vinylpyrrolidone) (PVP)/Y3BO6:Eu3+ luminescent composite film suitable for applications in the next generation of Hg-free lamps based on near ultraviolet (UV) light emitting diodes (LEDs). Well crystallized samples of Y3BO6 powders with the Eu3+ content up to 20 mol% were prepared by the Pechini method. After structural, morphological and optical characterization, the best doping rate of Eu3+ in the matrix was determined to be 15 mol%. This optimal powder, which is highly friable, was easily ground into fine particles and homogeneously dispersed into a PVP polymer solution to give rise to a polymer phosphor composite. Structural and optical features of the composite film have been studied and compared to those of a pristine PVP film and Y3BO6:Eu3+ powder. All the characterization (XRD, SAXS, luminescence...) proved that the red phosphor particles are well incorporated into the polymer composite film which exhibited the characteristic red emission of Eu3+ under UV light excitation. Furthermore, photostability of the polymer/phosphor composite film under UV-LED irradiation was evaluated from exposure to accelerated artificial photoageing at wavelengths above 300 nm.

Photoelectron multipliers based on avalanche pn - i - pn structures

We present a new physical principle to design an optoelectronic device, which consists of a multilayered semiconductor structure, where the necessary conditions for generation of photoelectrons are met, such that it will enable sequential avalanche multiplication of electrons and holes inside two depletion slabs created around the p - n junctions of a reverse biased pn - i - pn structure. The mathematical model and computer simulations of this Semiconductor Photo-electron Multiplier (SPEM) for different semiconductor materials are presented. Its performance is evaluated and compared with that of conventional devices. The Geiger operational mode is briefly discussed which may be used in Silicon Photomultiplier (SiPM) as an elementary photo detector to enhance its performance.

Caracterização de diodos tipo Schottky fabricados com poli-o-metoxianilina em diversas temperaturas

Technological advances achieved during the twentieth century strongly boosted the scientific research in the area of condensed matter physics, especially in the study and development of new semiconductor materials. In the segment, the development of semiconducting polymers for application in electronic devices promotes the field of organic electronics...(Complete abstract click electronic access below)

Estudo, construção e caracterização de diodos orgânicos tipo Schttky

During the twentieth century the inorganic electronics was largely developed being present in various industrial equipment or household use. However, at the end of that century were verified electronic properties in organic compounds, giving rise to the field of organic electronics. Since then, the physical properties of elementary devices such as diodes and organic transistors have been studied. In this work was studied the properties of diode devices fabricated with a semiconductor polymer, the poly-o-methoxyaniline (POMA). Devices containing electrodes of Au and Al were fabricated with semiconductor polymer of different doping levels. We found that the rectifying behavior for the heterojunctions metal/polimer are reached only for high doping level (with conductivity greater than 1,77. 10-9 S / cm), which gives the devices characteristic of a Schottky diode. The rectifying behavior was observed for electric fields of low magnitude, below the operating field (~ 600 V/cm), while for electric field greater than 600 V/cm the a linear behavior I vs.V was obtained. We determined that this Ohmic behavior arises from the charge transport over the volume of the semiconductor material after the lowering of the metal/semiconductor barrier. In devices with weakly doped semiconductor, the electrical resistance of the volume becomes high and the process of charge transportation is dominated by the volume, for any intensity of the applied electric field

Diodo planar orgânico Schottky: construção e caracterização

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Um estudo teórico e experimental de nanoestruturas de 'ZnS': propriedades físicas e químicas

Pós-graduação em Química - IQ

Deposição de filmes finos de SnO2 e GaAs, visando confecção de dispositivos baseados na heterojunção SnO2/GaAs

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Load-application devices: a comparative strain gauge analysis

In view of the low loading values commonly employed in dentistry, a load-application device (LAD) was developed as option to the universal testing machine (UTM), using strain gauge analysis. The aim of this study was to develop a load-application device (LAD) and compare the LAD with the UTM apparatus under axial and non-axial loads. An external hexagonal implant was inserted into a polyurethane block and one EsthetiCone abutment was connected to the implant. A plastic prosthetic cylinder was screwed onto the abutment and a conical pattern crown was fabricated using acrylic resin. An impression was made and ten identical standard acrylic resin patterns were obtained from the crown impression, which were cast in nickel-chromium alloy (n=10). Four strain gauges were bonded diametrically around the implant. The specimens were subjected to central (C) and lateral (L) axial loads of 30 kgf, on both devices: G1: LAD/C; G2: LAD/L; G3: UTM/C; G4: UTM/L. The data (με) were statistically analyzed by repeated measures ANOVA and Tukey's test (p<0.05). No statistically significant difference was found between the UTM and LAD devices, regardless of the type of load. It was concluded that the LAD is a reliable alternative, which induces microstrains to implants similar to those obtained with the UTM.