Factors affecting leaf morphology: a case study of Ranunculus natans C. A. Mey. (Ranunculaceae) in the arid zone of northwest China

In order to examine the role of environmental factors affecting foliar morphology, we performed a case study of leaf morphological variation of Ranunculus natans found in the arid zone of northwest China. We found that foliar phenotypic variation differed significantly between populations. We described substantial positive correlations between altitude and leaf area (LA) as well as leaf perimeter (LP), and also between longitude and number of teeth, along with dissection index (DI). The pH, conductivity, and salinity of the environment caused a significant decrease in both LA and LP. Ranked in terms of their impacts on leaf morphology, the six selected factors were: altitude > pH > conductivity > salinity > longitude > latitude. We found that foliar morphological variations are functional responses to water-quantity factors (e.g., altitude and longitude at regional scales) and water-availability relation factors (e.g., pH, conductivity, and salinity at local scales), rather than to temperature-relation factors (latitude). Therefore, altitude and longitude, along with pH, conductivity, and salinity, are the main factors that significantly influence foliar morphology in the arid zone of China. We found that main factors played major roles in plant phenotypic plasticity in a complex ecosystem, although different combinations and interactions of environmental and geographical factors in each local environment may obscure the general trends in trait changes along environmental gradients.

Staphylococcus aureus lipoproteins trigger human corneal epithelial innate response through toll-like receptor-2

Bacterial lipoproteins (LP) are a family of cell wall components found in a wide variety of bacteria. In this study, we characterized the response of HUCL, a telomerase-immortalized human corneal epithelial cell (HCEC) line, to LP isolated from Staphylococcus (S) aureus. S. aureus LP (saLP) prepared by Triton X-114 extraction stimulated the activation of NF-kappa B, JNK, and P38 signaling pathways in HUCL cells. The extracts failed to stimulate NF-kappa B activation in HUCL cells after lipoprotein lipase treatment and in cell lines expressing TLR4 or TLR9, but not TLR2, indicating lipoprotein nature of the extracts. saLP induced the up-regulation of a variety of inflammatory cytokines and chemokines (IL-6, IL-8, ICAM-1). antimicrobial molecules (hBD-2, LL-37, and iNOS), and homeostasis genes (Mn-SOD) at both the mRNA level and protein level. Similar inflammatory response to saLP was also observed in primarily cultured HCECs using the production of IL-6 as readout. Moreover, TLR2 neutralizing antibody blocked the saLP-induced secretion of IL-6, IL-8 and hBD2 in HUCL cells. Our findings suggest that saLP activates TLR2 and triggers innate immune response in the cornea to S. aureus infection via production of proinflammatory cytokines and defense molecules. (C) 2007 Elsevier Ltd. All rights reserved.

Aberration correction for free space optical communications using rectangular zernike modal wavefront sensing

A time multiplexed rectangular Zernike modal wavefront sensor based on a nematic phase-only liquid crystal spatial light modulator and specially designed for a high power two-electrode tapered laser diode which is a compact and novel free space optical communication source is used in an adaptive beam steering free space optical communication system, enabling the system to have 1.25 GHz modulation bandwidth, 4.6° angular coverage and the capability of sensing aberrations within the system and caused by atmosphere turbulence up to absolute value of 0.15 waves amplitude and correcting them in one correction cycle. Closed-loop aberration correction algorithm can be implemented to provide convergence for larger and time varying aberrations. Improvement of the system signal-to-noise-ratio performance is achieved by aberration correction. To our knowledge, it is first time to use rectangular orthonormal Zernike polynomials to represent balanced aberrations for high power rectangular laser beam in practice. © 2014 IEEE.

Distribution of nitrogen and phosphorus in sediment cores and overlying water of Donghu Lake

In this study, the seasonal, vertical distribution of various phosphorus and nitrogen forms in the sediment and overlying water of Donghu Lake were investigated. The concentration of total nitrogen (TN) in overlying water was high in spring and autumn, but that of NO3--N reached its peak in autumn. From summer to autumn and from winter to spring, the concentration of phosphorus in overlying water decreased, while it increased from autumn to winter. Vertical characteristic forms of phosphorus in sediment cores are total phosphorus (TP), labile phosphorus (LP), Fe-P and Al-P, obviously enriched in the surface layer (0-10 cm), but their concentrations are observably reduced along with the depth of sediment. The research is of important theoretical and practical value to understand the status and to control the developmental trend of eutrophication in Donghu Lake.

Development of a turning mid turbine frame with embedded design-part II: Unsteady measurements

© 2014 by ASME. This paper, the second of two parts, presents a new setup for the two-stage two-spool facility located at the Institute for Thermal Turbomachinery and Machine Dynamics (ITTM) of Graz University of Technology. The rig was designed to reproduce the flow behavior of a transonic turbine followed by a counter-rotating low pressure stage such as those in high bypass aero-engines. The meridional flow path of the machine is characterized by a diffusing S-shaped duct between the two rotors. The role of wide chord vanes placed into the mid turbine frame is to lead the flow towards the low pressure (LP) rotor with appropriate swirl. Experimental and numerical investigations performed on this setup showed that the wide chord struts induce large wakes and extended secondary flows at the LP inlet flow. Moreover, large deterministic fluctuations of pressure, which may cause noise and blade vibrations, were observed downstream of the LP rotor. In order to minimize secondary vortices and to damp the unsteady interactions, the mid turbine frame was redesigned to locate two zero-lift splitters into each vane passage. While in the first part of the paper the design process of the splitters and the time-averaged flow field were presented, in this second part the measurements performed by means of a fast response probe will support the explanation of the time-resolved field. The discussion will focus on the comparison between the baseline case (without splitters) and the embedded design.

Development of a turning mid turbine frame with embedded design-part I: Design and steady measurements

© 2014 by ASME. The paper presents a new setup for the two-stage two-spool facility located at the Institute for Thermal Turbomachinery and Machine Dynamics (ITTM) of Graz University of Technology. The rig was designed in order to simulate the flow behavior of a transonic turbine followed by a counter-rotating low pressure (LP) stage like the spools of a modern high bypass aeroengine. The meridional flow path of the machine is characterized by a diffusing S-shaped duct between the two rotors. The role of turning struts placed into the mid turbine frame is to lead the flow towards the LP rotor with appropriate swirl. Experimental and numerical investigations performed on the setup over the last years, which were used as baseline for this paper, showed that wide chord vanes induce large wakes and extended secondary flows at the LP rotor inlet flow. Moreover, unsteady interactions between the two turbines were observed downstream of the LP rotor. In order to increase the uniformity and to decrease the unsteady content of the flow at the inlet of the LP rotor, the mid turbine frame was redesigned with two zero-lifting splitters embedded into the strut passage. In this first part of the paper the design process of the splitters and its critical points are presented, while the time-averaged field is discussed by means of five-hole probe measurements and oil flow visualizations. The comparison between the baseline case and the embedded design configuration shows that the new design is able to reduce the flow gradients downstream of the turning struts, providing a more suitable inlet condition for the low pressure rotor. The improvement in the flow field uniformity is also observed downstream of the turbine and it is, consequently, reflected in an enhancement of the LP turbine performance. In the second part of this paper the influence of the embedded design on the time-resolved field is investigated.

Photoluminescence properties of tensile-strained GaAsP/GaInP single quantum wells grown by metal organic chemical vapor deposition

Tensile-strained GaAsP/GaInP single quantum well (QW) laser diode (I-D) structures have been grown by low-pressure metal organic chemical vapor deposition (LP-MOCVD) and related photoluminescence (PL) properties have been investigated in detail. The samples have the same well thickness of 16 nm but different P compositions in a GaAsP QW. Two peaks in room temperature (RT) PL spectra are observed for samples with a composition larger than 0.10. Temperature and excitation-power-dependent PL spectra have been measured for a sample with it P composition of 0.15. It is found that the two peaks have a 35 meV energy separation independent of temperature and only the low-energy peak exists below 85 K. Additionally, both peak intensities exhibit a monotonous increase as excitation power increases. Analyses indicate that the two peaks arise from the intrinsic-exciton recombination mechanisms of electron-heavy hole (e-hh) and electron-light hole (e-hh). A theoretical calculation based oil model-solid theory, taking, into account the spin-orbit splitting energy, shows good agreement with our experimental results. The temperature dependence of PL intensity ratio is well explained using the spontaneous emission theory for e-hh and e-hh transitions. front which the ratio can be characterized mainly by the energy separation between the fill and Ill states.

A photonic wire-based directional coupler based on SOI

A photonic wire-based directional coupler based on SOI was fabricated by e-beam lithography (EBL) and the inductively coupled plasma (ICP) etching method. The size of the sub-micron waveguide is 0.34 mu m x 0.34 mu m, and the length in the coupling region and the separation between the two parallel waveguides are 410 and 0.8 mu m, respectively. The measurement results are in good agreement with the results simulated by 3D finite-difference time-domain method. The transmission power from two output ports changed reciprocally with about 23 nm wavelength spacing between the coupled and direct ports. The extinction ratio of the device was between 5 and 10 dB, and the insertion loss of the device in the wavelength range 1520-1610 nm was between 22 and 24 dB, which included an about 18.4 +/- 0.4 dB coupling loss between the taper fibers and the polished sides of the device. (c) 2008 Elsevier B.V. All rights reserved.

Effect of indium-doped interlayer on the strain relief in GaN films grown on Si(111)

Crack-free GaN films have been achieved by inserting an Indoped low-temperature (LT) AlGaN interlayer grown on silicon by metalorganic chemical vapor deposition. The relationship between lattice constants c and a obtained by X-ray diffraction analysis shows that indium doping interlayer can reduce the stress in GaN layers. The stress in GaN decreases with increasing trimethylindium (TMIn) during interlayer growth. Moreover, for a smaller TMIn flow, the stress in GaN decreases dramatically when In acts as a surfactant to improve the crystallinity of the AlGaN interlayer, and for a larger TMIn flow, the stress will increase again. The decreased stress leads to smoother surfaces and fewer cracks for GaN layers by using an In-doped interlayer than by using an undoped interlayer. In doping has been found to enhance the lateral growth and reduce the growth rate of the c face. It can explain the strain relief and cracks reduction in GaN films. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Optical response of high-level bandgap in one-dimensional photonic crystal applying in-plane integration

A new broadband filter, based on the high level bandgap in 1-D photonic crystals (PCs) of the form Si vertical bar air vertical bar Si vertical bar air vertical bar Si vertical bar air vertical bar Si vertical bar air vertical bar Si vertical bar air vertical bar Si is designed by the plane wave expansion method (PWEM) and the transfer matrix method (TMM) and fabricated by lithography. The optical response of this filter to normal-incident and oblique-incident light proves that utilizing the high-level bandgaps of PCs is an efficient method to lower the difficulties of fabricating PCs, increase the etching depth of semiconductor materials, and reduce the coupling loss at the interface between optical fibers and the PC device. (c) 2007 Society of Photo-Optical Instrumentation Engineers.

Electroluminescence from Ge on Si substrate at room temperature

A Ge/Si heterojunction light emitting diode with a p(+)-Ge/i-Ge/N+-Si structure was fabricated using the ultrahigh vacuum chemical vapor deposition technology on N+-Si substrate. The device had a good I-V rectifying behavior. Under forward bias voltage ranging from 1.1 to 2.5 V, electroluminescence around 1565 nm was observed at room temperature. The mechanism of the light emission is discussed by the radiative lifetime and the scattering rate. The results indicate that germanium is a potential candidate for silicon-based light source material. (C) 2009 American Institute of Physics. [DOI 10.1063/1.3216577]

Nonpolar growth and characterization of InN overlayers on vertically oriented GaN nanorods

Nanostructured hexagonal InN overlayers were heteroepitaxially deposited on vertically oriented c-axis GaN nanorods by metal-organic chemical vapor deposition. InN overlayers grown in radial directions are featured by a nonpolar heteroepitaxial growth mode on GaN nanorods, showing a great difference from the conventional InN growth on (0001) c-plane GaN template. The surface of InN overlayers is mainly composed of several specific facets with lower crystallographic indices. The orientation relationship between InN and GaN lattices is found to be [0001](InN) parallel to [0001](GaN) and [1100](InN)parallel to[1100](GaN). A strong photoluminescence of InN nanostructures is observed. (C) 2009 American Institute of Physics. [DOI 10.1063/1.3177347]

1.55 mu m Ge islands resonant-cavity-enhanced detector with high-reflectivity bottom mirror

A 1.55 mum Ge islands resonant-cavity-enhanced (RCE) detector with high-reflectivity bottom mirror was fabricated by a simple method. The bottom mirror was deposited in the hole formed by anisotropically etching in a basic solution from the back side of the sample with the buried SiO2 layer in silicon-on-insulator substrate as the etch-stop layer. Reflectivity spectrum indicates that the mirror deposited in the hole has a reflectivity as high as 99% in the range of 1.2-1.65 mum. The peak responsivity of the RCE detector at 1543.8 nm is 0.028 mA/W and a full width at half maximum of 5 nm is obtained. Compared with the conventional p-i-n photodetector, the responsivity of RCE detector has a nearly threefold enhancement. (C) 2004 American Institute of Physics.

Novel room temperature photoluminescence of Ge/Si islands in multilayer structure grown on silicon-on-insulator substrate

Novel room temperature photoluminescence (PL) of the Ge/Si islands in multilayer structure grown on silicon-on-insulator substrates is investigated. The cavity formed by the mirrors at the surface and the buried SiO2 interface has a strong effect on the PL emission. The peak position is consistent with the theoretical calculation and independent of the exciting power, which is the evidence of cavity effect on the room temperature photoluminescence. (C) 2004 Elsevier B.V. All rights reserved.

Fabrication of low-cost and high-reflectivity bottom mirrors for Si-based micro-cavity devices

A novel and simple way to prepare high-reflectivity bottom mirrors for Si-based micro-cavity devices is reported. The bottom mirror was deposited in the hole, which was etched from the backside of the sample by ethylenediamine-pyrocatechol-water solution with the buried Sio, layer in the silicon-on-insulator substrate as the etching-stop layer. The high-reflectivity of the bottom mirror deposited in the hole and the narrow hill width at half maximum of the cavity formed by this method both indicate the successful preparation of the bottom mirror for Si-based micro-cavity devices.