Advanced glycation end products induce blood-retinal barrier dysfunction in normoglycemic rats

Advanced glycation end products (AGEs) have been implicated in the progressive vascular dysfunction which occurs during diabetic retinopathy. In the current study we have examined the role of these adducts in blood-retinal barrier (BRB) breakdown and investigated expression of the vasopermeabilizing agent vascular endothelial growth factor (VEGF) in the retina. When normoglycemic rats were injected with AGE-modified albumin daily for up to 10 days there was widespread leakage of FITC-dextran and serum albumin from the retinal vasculature when compared to control animals treated with nonmodified albumin. Ultrastructural examination of the vasculature revealed areas of attenuation of the retinal vascular endothelium and increased vesicular organelles only in the AGE-exposed rats. Quantitative RT-PCR and in situ hybridization demonstrated a significant increase in retinal VEGF mRNA expression (P <0.05). These results suggest that AGEs can initiate BRB dysfunction in nondiabetic rats and a concomitant increase in retinal VEGF expression. These findings may have implications for the role of AGEs in the pathogenesis of diabetic retinopathy.

Systemic recruitment of osteoblastic cells in fracture healing

We hypothesise that following a bone fracture there is systemic recruitment of bone forming cells to a fracture site. A rabbit ulnar osteotomy model was adapted to trace the movement of osteogenic cells. Bone marrow mesenchymal stem cells from 41 NZW rabbits were isolated, culture-expanded and fluorescently labelled. The labelled cells were either re-implanted into the fracture gap (Group A); into a vein (Group B); or into a remote tibial bone marrow cavity 48 h after the osteotomy (Group C) or 4 weeks before the osteotomy was established (Group D), and a control group (Group E) had no labelled cells given. To quantify passive leakage of cells to an injury site, inert beads were also co-delivered in Group B. Samples of the fracture callus tissue and various organs were harvested at discrete sacrifice time-points to trace and quantify the labelled cells. At 3 weeks following osteotomy, the number of labelled cells identified in the callus of Group C, was significantly greater than following IV delivery, Group B, and there was no difference in the number of labelled cells in the callus tissues, between Groups C and A, indicating the labelled bone marrow cells were capable of migrating to the fracture sites from the remote bone marrow cavity. Significantly fewer inert beads than labelled cells were identified in Group B callus, suggesting some of the bone-forming cells were actively recruited and selectively chosen to the fracture site, rather than passively leaked into the circulation and to bone injury site. This investigation supports the hypothesis that some osteoblasts involved in fracture healing were systemically mobilised and recruited to the fracture from remote bone marrow sites. © 2005 Orthopaedic Research Society. Published by Elsevier Ltd. All rights reserved.

Hydrochemical and isotopic tracing of mixing dynamics and water quality evolution under pumping conditions in the mine shaft of the abandoned Frances Colliery, Scotland.

Since 1995, when pumps were withdrawn from deep mines in East Fife (Scotland), mine waters have been rebounding throughout the coalfield. Recently, it has become necessary to pump and treat these waters to prevent their uncontrolled emergence at the surface. However, even relatively shallow pumping to surface treatment lagoons of the initially chemically-stratified mine water from a shaft in the coastal Frances Colliery during two dynamic step-drawdown tests to establish the hydraulic characteristics of the system resulted in rapid breakdown of the stratification within 24 h and a poor pumped water quality with high dissolved Fe loading. Further, data are presented here of hydrochemical and isotopic sampling of the extended pump testing lasting up to several weeks. The use in particular of the environmental isotopes d18O, d2H, d34S, 3H, 13C and 14C alongside hydrochemical and hydraulic pump test data allowed characterisation of the Frances system dynamics, mixing patterns and water quality sources feeding into this mineshaft under continuously pumped conditions. The pumped water quality reflects three significant components of mixing: shallow freshwater, seawater, and leakage from the surface treatment lagoons. In spite of the early impact of recirculating lagoon waters on the hydrochemistries, the highest Fe loadings in the longer-term pumped waters are identified with a mixed freshwater–seawater component affected by pyrite oxidation/melanterite dissolution in the subsurface system.

An efficient method of radiation attenuation through aircraft cooling vents

Some critical avionic systems require cooling air via vents on the side of the aircraft, thus creating leakage points for high-intensity electromagnetic radiation. This paper presents a novel application of high-intensity radiated field (HIRF) shielding using a rectangular waveguide array, while maintaining cooling airflow requirements. Signal attenuation versus frequency and depth of the array has been calculated using closed-form equations. The simulation and measurement results are in good agreement with the calculated values. (C) 2004 Wiley Periodicals, Inc.

Idealised operation of zero-voltage-switching series-L/parallel-tuned Class-E power amplifier

An analysis of a modified series-L/parallel-tuned Class-E power amplifier is presented, which includes the effects that a shunt capacitance placed across the switching device will have on Class-E behaviour. In the original series L/parallel-tuned topology in which the output transistor capacitance is not inherently included in the circuit, zero-current switching (ZCS) and zero-current derivative switching (ZCDS) conditions should be applied to obtain optimum Class-E operation. On the other hand, when the output transistor capacitance is incorporated in the circuit, i.e. in the modified series-L/parallel-tuned topology, the ZCS and ZCDS would not give optimum operation and therefore zero-voltage-switching (ZVS) and zero-voltage-derivative switching (ZVDS) conditions should be applied instead. In the modified series-L/parallel-tuned Class-E configuration, the output-device inductance and the output-device output capacitance, both of which can significantly affect the amplifier's performance at microwave frequencies, furnish part, if not all, of the series inductance L and the shunt capacitance COUT, respectively. Further, when compared with the classic shunt-C/series-tuned topology, the proposed Class-E configuration offers some advantages in terms of 44% higher maximum operating frequency (fMAX) and 4% higher power-output capability (PMAX). As in the classic topology, the fMAX of the proposed amplifier circuit is reached when the output-device output capacitance furnishes all of the capacitance COUT, for a given combination of frequency, output power and DC supply voltage. It is also shown that numerical simulations agree well with theoretical predictions.

Exploring figures of merit associated with the suboptimum operation of class-E power amplifiers

Closed-form design equations for the operation of a class-E amplifier for zero switch voltage slope and arbitrary duty cycle are derived. This approach allows an additional degree of freedom in the design of class-E amplifiers which are normally designed for 50 duty ratio. The analysis developed permits the selection of non-unique solutions where amplifier efficiency is theoretically 100 but power output capability is less than that the 50 duty ratio case would permit. To facilitate comparison between 50 (optimal) and non-50 (suboptimal) duty ratio cases, each important amplifier parameter is normalised to its corresponding optimum operation value. It is shown that by choosing a non-50 suboptimal solution, the operating frequency of a class-E amplifier can be extended. In addition, it is shown that by operating the amplifier in the suboptimal regime, other amplifier parameters, for example, transistor output capacitance or peak switch voltage, can be included along with the standard specification criteria of output power, DC supply voltage and operating frequency as additional input design specifications. Suboptimum class-E operation may have potential advantages for monolithic microwave integrated circuit realisation as lower inductance values (lower series resistance, higher self-resonance frequency, less area) may be required when compared with the results obtained for optimal class-E amplifier synthesis. The theoretical analysis conducted here was verified by harmonic balance simulation, with excellent agreement between both methods. © The Institution of Engineering and Technology 2007.

6-T SRAM cell design with nanoscale double-gate SOI MOSFETs: impact of source/drain engineering and circuit topology

The impact of source/drain engineering on the performance of a six-transistor (6-T) static random access memory (SRAM) cell, based on 22 nm double-gate (DG) SOI MOSFETs, has been analyzed using mixed-mode simulation, for three different circuit topologies for low voltage operation. The trade-offs associated with the various conflicting requirements relating to read/write/standby operations have been evaluated comprehensively in terms of eight performance metrics, namely retention noise margin, static noise margin, static voltage/current noise margin, write-ability current, write trip voltage/current and leakage current. Optimal design parameters with gate-underlap architecture have been identified to enhance the overall SRAM performance, and the influence of parasitic source/drain resistance and supply voltage scaling has been investigated. A gate-underlap device designed with a spacer-to-straggle (s/sigma) ratio in the range 2-3 yields improved SRAM performance metrics, regardless of circuit topology. An optimal two word-line double-gate SOI 6-T SRAM cell design exhibits a high SNM similar to 162 mV, I-wr similar to 35 mu A and low I-leak similar to 70 pA at V-DD = 0.6 V, while maintaining SNM similar to 30% V-DD over the supply voltage (V-DD) range of 0.4-0.9 V.

Comparative analysis of the DC performance of DG MOSFETs on highly-doped and near-intrinsic silicon layers

A comparison of dc characteristics of fully depleted double-gate (DG) MOSFETs with respect to low-power circuit applications and device scaling has been performed by two-dimensional device simulation. Three different DG MOSFET structures including a conventional N+ polysilicon gate device with highly doped Si layer, an asymmetrical P+/N+ polysilicon gate device with low doped Si layer and a midgap metal gate device with low doped Si layer have been analysed. It was found that DG MOSFET with mid-gap metal, gates yields the best dc parameters for given off-state drain leakage current and highest immunity to the variation of technology parameters (gate length, gate oxide thickness and Si layer thickness). It is also found that an asymmetrical P+/N+ polysilicon gate DG MOSFET design offers comparable dc characteristics, but better parameter immunity to technology tolerances than a conventional DG MOSFET. (C) 2004 Elsevier Ltd. All rights reserved.

Periodically loaded dipole array supporting left-handed propagation

Periodically loaded dipole arrays printed on grounded dielectric substrate are shown to exhibit left-handed propagation properties. In an equivalent transmission line representation, lefthandedness emerges due to the excess series capacitance and shunt inductance. Based on this concept, the authors study the distribution of the modal fields and the variation of series capacitance and shunt inductance as the dipoles are loaded with stubs. Full wave dispersion curves that show the gradual transition from a right-handed to a left-handed medium upon periodically loading the dipoles with stubs are presented. An equivalent circuit is derived that matches to a very good extent the full wave result. The cell dimensions are a small fraction of the wavelength (),15), so the structure can be considered as an equivalent homogeneous surface. The structure is simple, readily scalable to higher frequencies and compatible with low-cost fabrication techniques.

Efficient modeling of novel uniplanar left-handed metamaterials

This paper presents an efficient. modeling technique for the derivation of the dispersion characteristics of novel uniplanar metallodielectric periodic structures. The analysis is based on the method of moments and an interpolation scheme, which significantly accelerates the computations. Triangular basis functions are used that allow for modeling of arbitrary shaped metallic elements. Based on this method, novel uniplanar left-handed (LH) metamaterials are proposed. Variations of the split rectangular-loop element printed on grounded dielectric substrate are demonstrated to possess LH propagation properties. Full-wave dispersion curves are presented. Based on the dual transmission-line concept, we study the distribution of the modal fields And the variation of series capacitance and shunt inductance for all the proposed elements. A verification of the left-handedness is presented by means of full-wave simulation of finite uniplanar arrays using commercial software (HFSS). The cell dimensions are a small fraction of the wavelength (approximately lambda/24) so that the structures can he considered as a homogeneous effective medium. The structures are simple, readily scalable to higher frequencies, and compatible with low-cost fabrication techniques.

High-performance IQ modulator-based phase conjugator for modular retrodirective antenna array implementation

In this paper, we verify a new phase conjugating architecture suitable for deployment as (lie core building block in retrodirective antenna arrays, which can be scaled to any number of elements in a modular way without impacting on complexity. Our solution is based on a modified in-phase and quadrature modulator architecture, which completely resolves four major shortcomings of the conventional mixer-based approach currently used for the synthesis of phase conjugated energy derived from a sampled incoming wavefront. 1) The architecture presented removes the need for a local oscillator running at twice the RF signal frequency to be conjugated. 2) It maintains a constant transmit power even if receive power goes as low as -120 dBm. 3) All unwanted re-transmit signal products are suppressed by at least 40 dB. 4) The issue of poor RF-IF leakage prevalent in mixer-based phase-conjugation solutions is completely mitigated. The circuit has also been shown to have high conjugation accuracy (better than +/-1 degrees at -60-dBm input). Near theoretically perfect experimental monostatic and bistatic results are presented for a ten-element retrodirective array constructed using the new phase conjugation architecture.

Digital Baseband Predistortion Based Linearized Broadband Inverse Class-E Power Amplifier

A newly introduced inverse class-E power amplifier (PA) was designed, simulated, fabricated, and characterized. The PA operated at 2.26 GHz and delivered 20.4-dBm output power with peak drain efficiency (DE) of 65% and power gain of 12 dB. Broadband performance was achieved across a 300-Mitz bandwidth with DE of better than 50% and 1-dB output-power flatness. The concept of enhanced injection predistortion with a capability to selectively suppress unwanted sub-frequency components and hence suitable for memory effects minimization is described coupled with a new technique that facilitates an accurate measurement of the phase of the third-order intermodulation (IM3) products. A robust iterative computational algorithm proposed in this paper dispenses with the need for manual tuning of amplitude and phase of the IM3 injected signals as commonly employed in the previous publications. The constructed inverse class-E PA was subjected to a nonconstant envelope 16 quadrature amplitude modulation signal and was linearized using combined lookup table (LUT) and enhanced injection technique from which superior properties from each technique can be simultaneously adopted. The proposed method resulted in 0.7% measured error vector magnitude (in rms) and 34-dB adjacent channel leakage power ratio improvement, which was 10 dB better than that achieved using the LUT predistortion alone.

Improved Direct Power Control of Grid Connected DC/AC Converters

This paper proposes new direct power control (DPC) strategies for three-phase DC/AC converters with improved dynamic response and steady-state performance. As with an electrical machine, source and converter flux which equal the integration of the respective source and converter voltage are used to define active and reactive power flow. Optimization of the look-up-table used in conventional DPC is outlined first, to improve the power control and reduce the current distortion. Then constant switching frequency DPC is developed where the required converter voltage vector within a fixed half switching period is calculated directly from the active and reactive power errors. Detailed angle compensation due to the finite sampling frequency and the use of integral controller to further improve the power control accuracy, are described. Both simulation and experimental results are used to compare conventional DPC and vector control, and to demonstrate the effectiveness and robustness of the proposed control strategies during active and reactive power steps, and line inductance variations.

Power-Combining Class-E Amplifier With Finite Choke

A recently introduced power-combining scheme for a Class-E amplifier is, for the first time, experimentally validated in this paper. A small value choke of 2.2 nH was used to substitute for the massive dc-feed inductance required in the classic Class-E circuit. The power-combining amplifier presented, which operates from a 3.2-V dc supply voltage, is shown to be able to deliver a 24-dBm output power and a 9.5-dB gain, with 64% drain efficiency and 57% power-added efficiency at 2.4 GHz. The power amplifier exhibits a 350-MHz bandwidth within which a drain efficiency that is better than 60% and an output power that is higher than 22 dBm were measured. In addition, by adopting three-harmonic termination strategy, excellent second-and third-harmonic suppression levels of 50 and 46 dBc, respectively, were obtained. The complete design cycle from analysis through fabrication to characterization is explained. © 2010 IEEE.

Electrical characterization of ALD Al2O3 and HfO2 films on germanium

Al2O3 and HfO2 films were deposited on germanium substrates by atomic layer deposition (ALD) and analyzed by MOS capacitor electrical characterization. In-situ plasma nitridation performed prior to ALD was found to improve the stability of the interface. For Al 2O3/GeON/Ge capacitors, a 450°C anneal in nitrogen ambient reduced hysteresis and oxide fixed charge to 90 mV and 1012 cm-2 respectively, with low leakage current density. On the contrary, degradation was observed for un-nitrided Al2O3/Ge capacitors after 300 and 400°C post-metal anneals. HfO2/GeON/Ge capacitors benefitted from a 400°C densification anneal but exhibited degradation after post-metal anneals at temperatures greater than 300°C. This degradation is attributed to the influence of Al electrodes on the HfO 2 gate stack. HfO2 is considered to be a suitable material for the gate stack and Al2O3 for the buried dielectric in a GeOI structure. ©The Electrochemical Society.