Level-oscillation-induced pump effect in a quantum dot with asymmetric constrictions

We have investigated the pump effect induced by the level oscillation in a quantum dot with asymmetric constrictions. The curve of pumped current versus the frequency of level oscillation undulates at zero temperature. The oscillation of the pumped current can be smeared by increasing the temperature and the coupling strength between the quantum dot and the leads. Either the temperature increase or the coupling strength enhancement can lead to a positive or negative effect on the pumped current, depending on the parameters of the quantum dot system. A larger level-oscillation magnitude results in a larger pumped current, especially in the low-frequency case. An analytical expression of the pumped current is obtained in the regime far from adiabatic. A convenient physical picture based on our analytic result is proposed, with which we can explain all the features of the pumped current curves.

Dynamics of quantum dissipation systems interacting with fermion and boson grand canonical bath ensembles: Hierarchical equations of motion approach

A hierarchical equations of motion formalism for a quantum dissipation system in a grand canonical bath ensemble surrounding is constructed on the basis of the calculus-on-path-integral algorithm, together with the parametrization of arbitrary non-Markovian bath that satisfies fluctuation-dissipation theorem. The influence functionals for both the fermion or boson bath interaction are found to be of the same path integral expression as the canonical bath, assuming they all satisfy the Gaussian statistics. However, the equation of motion formalism is different due to the fluctuation-dissipation theories that are distinct and used explicitly. The implications of the present work to quantum transport through molecular wires and electron transfer in complex molecular systems are discussed. (c) 2007 American Institute of Physics.

Evolution of wetting layer of InAs/GaAs quantum dots studied by reflectance difference spectroscopy

For the InAs/GaAs quantum-dot system, the evolution of the wetting layer (WL) with the InAs deposition thickness has been studied by reflectance difference spectroscopy (RDS) in combination with atomic force microscopy and photoluminescence. One transition related to the light hole in the WL has been observed clearly in RDS, from which its transition energy and in-plane optical anisotropy (OA) are determined. The evolution of WL with the InAs dot formation and ripening has been discussed. In addition, the remarkable changes in OA at the onsets of the dot formation and ripening have been observed, implying the mode transitions of atom transport between the WL and the dots.

Quantum-confined stark effect of vertically stacked self-assembled quantum discs

We study the electronic energy levels and probability distribution of vertically stacked self-assembled InAs quantum discs system in the presence of a vertically applied electric field. This field is found to increase the splitting between the symmetric and antisymmetric levels for the same angular momentum. The field along the direction from one disc to another affects the electronic energy levels similarly as that in the opposite direction because the two discs are identical. It is obvious from our calculation that the probability of finding an electron in one disc becomes larger when the field points from this disc to the other one.

Optical properties of InGaAs self-assembled quantum dots with InAlAs wetting layer

A new self-assembled quantum dots system where InGaAs dots are formed on InAlAs wetting layer and embedded in GaAs matrix has been fabricated. The photoluminescence linewidth increases with increasing temperature, which is very different from normal In(Ga)As/GaAs quantum dots. The results are attributed to a higher energy of the wetting layer which breaks the carrier transfer channel between dots and keeps the dots more isolated from each other.

Abnormal temperature dependence of photoluminescence from self-assembled InAs quantum dots covered by an InAlAs/InGaAs combination layer

In this report we have investigated the temperature dependence of photoluminescence (PL) from self-assembled InAs quantum dots (QDs) covered by an InAlAs/InGaAs combination layer. The ground state experiences an abnormal variation of PL linewidth from 15 K up to room temperature. Meanwhile, the PL integrated intensity ratio of the first excited state to the ground state for InAs QDs unexpectedly decreases with increasing temperature, which we attribute to the phonon bottleneck effect. We believe that these experimental results are closely related to the partially coupled quantum dots system and the large energy separation between the ground and the first excited states. (C) 2003 Elsevier Science Ltd. All rights reserved.

Structure and photoluminescence of InGaAs quantum dots formed on an InAlAs wetting layer

We have developed a new self-assembled quantum dot system where InGaAs dots are formed on an InAlAs wetting layer and embedded in the GaAs matrix. The structure is realized by special sample designation and demonstrated by low-temperature photoluminescence measurements. In contrast to the traditional InAs/GaAs quantum dots dominated by the ensemble effect, the temperature dependence of the photoluminescence of such a quantum dot structure behaves as decoupled quantum dots. This can be attributed to the enhanced potential confinement for the dots provided by a higher-energy barrier in the wetting layer.

Optical properties of InGaAs quantum dots formed on InAlAs wetting layer

We have fabricated a new self-assembled quantum dot system where InGaAs dots are formed on InAlAs wetting layer and embedded in GaAs matrix. The low-temperature photoluminescence and atomic force microscopy measurements confirm the realization of the structure. In contrast to traditional InAs/Ga(Al)As quantum dots, the temperature dependence of the photoluminescence of the dots in such a structure exhibits an electronically decoupled feature due to a higher energy level of the wetting layer which keeps the dots more isolated from each other. (C) 2001 Published by Elsevier Science B.V.

Elastic Strain Field Distribution of a Self-Organized Growth Lensed-Shaped Quantum Dot by Finite Element Method

The stress and strain fields in self-organized growth coherent quantum dots (QD) structures are investigated in detail by two-dimension and three-dimension finite element analyses for lensed-shaped QDs. The nonobjective isolate quantum dot system is used. The calculated results can be directly used to evaluate the conductive band and valence band confinement potential and strain introduced by the effective mass of the charge carriers in strain QD.

Multiple-User Quantum Optical Communication

A fundamental understanding of the information carrying capacity of optical channels requires the signal and physical channel to be modeled quantum mechanically. This thesis considers the problems of distributing multi-party quantum entanglement to distant users in a quantum communication system and determining the ability of quantum optical channels to reliably transmit information. A recent proposal for a quantum communication architecture that realizes long-distance, high-fidelity qubit teleportation is reviewed. Previous work on this communication architecture is extended in two primary ways. First, models are developed for assessing the effects of amplitude, phase, and frequency errors in the entanglement source of polarization-entangled photons, as well as fiber loss and imperfect polarization restoration, on the throughput and fidelity of the system. Second, an error model is derived for an extension of this communication architecture that allows for the production and storage of three-party entangled Greenberger-Horne-Zeilinger states. A performance analysis of the quantum communication architecture in qubit teleportation and quantum secret sharing communication protocols is presented. Recent work on determining the channel capacity of optical channels is extended in several ways. Classical capacity is derived for a class of Gaussian Bosonic channels representing the quantum version of classical colored Gaussian-noise channels. The proof is strongly mo- tivated by the standard technique of whitening Gaussian noise used in classical information theory. Minimum output entropy problems related to these channel capacity derivations are also studied. These single-user Bosonic capacity results are extended to a multi-user scenario by deriving capacity regions for single-mode and wideband coherent-state multiple access channels. An even larger capacity region is obtained when the transmitters use non- classical Gaussian states, and an outer bound on the ultimate capacity region is presented

Correlated electron transport in molecular electronics

Theoretical and experimental values to date for the resistances of single molecules commonly disagree by orders of magnitude. By reformulating the transport problem using boundary conditions suitable for correlated many-electron systems, we approach electron transport across molecules from a new standpoint. Application of our correlated formalism to benzene-dithiol gives current-voltage characteristics close to experimental observations. The method can solve the open system quantum many-body problem accurately, treats spin exactly, and is valid beyond the linear response regime.

Comment on “Electron transport through correlated molecules computed using the time-independent Wigner function: Two critical tests”

The many-electron-correlated scattering (MECS) approach to quantum electronic transport was investigated in the linear-response regime [I. Bâldea and H. Köppel, Phys. Rev. B 78, 115315 (2008). The authors suggest, based on numerical calculations, that the manner in which the method imposes boundary conditions is unable to reproduce the well-known phenomena of conductance quantization. We introduce an analytical model and demonstrate that conductance quantization is correctly obtained using open system boundary conditions within the MECS approach.

Generalized Langevin equation: An efficient approach to nonequilibrium molecular dynamics of open systems

The generalized Langevin equation (GLE) has been recently suggested to simulate the time evolution of classical solid and molecular systems when considering general nonequilibrium processes. In this approach, a part of the whole system (an open system), which interacts and exchanges energy with its dissipative environment, is studied. Because the GLE is derived by projecting out exactly the harmonic environment, the coupling to it is realistic, while the equations of motion are non-Markovian. Although the GLE formalism has already found promising applications, e. g., in nanotribology and as a powerful thermostat for equilibration in classical molecular dynamics simulations, efficient algorithms to solve the GLE for realistic memory kernels are highly nontrivial, especially if the memory kernels decay nonexponentially. This is due to the fact that one has to generate a colored noise and take account of the memory effects in a consistent manner. In this paper, we present a simple, yet efficient, algorithm for solving the GLE for practical memory kernels and we demonstrate its capability for the exactly solvable case of a harmonic oscillator coupled to a Debye bath.

Squeezing of mechanical motion via qubit-assisted control

We propose a feedback control mechanism for the squeezing of the phononic mode of a mechanical oscillator. We show how, under appropriate working conditions, a simple adiabatic approach is able to induce mechanical squeezing. We then go beyond the limitations of such a working point and demonstrate the stationary squeezing induced by using repeated measurements and reinitialization of the state of a two-level system ancilla coupled to the oscillator. Our nonadaptive feedback loop offers interesting possibilities for quantum state engineering and steering in open-system scenarios.

Room-temperature continuous-wave operation of GaInNAs/GaAs quantum dot laser with GaAsN barrier grown by solid source molecular beam epitaxy

We present the results of GaInNAs/GaAs quantum dot structures with GaAsN barrier layers grown by solid source molecular beam epitaxy. Extension of the emission wavelength of GaInNAs quantum dots by ~170nm was observed in samples with GaAsN barriers in place of GaAs. However, optimization of the GaAsN barrier layer thickness is necessary to avoid degradation in luminescence intensity and structural property of the GaInNAs dots. Lasers with GaInNAs quantum dots as active layer were fabricated and room-temperature continuous-wave lasing was observed for the first time. Lasing occurs via the ground state at ~1.2μm, with threshold current density of 2.1kA/cm[superscript 2] and maximum output power of 16mW. These results are significantly better than previously reported values for this quantum-dot system.