Heat conduction mechanisms in hot pressed ZrB2 and ZrB2-SiC composites

Thermal diffusivity and conductivity of hot pressed ZrB2 with different amounts of B4C (0-5 wt%) and ZrB2-SiC composites (10-30 vol% SiC) were investigated experimentally over a wide range of temperature (25-1500 degrees C). Both thermal diffusivity and thermal conductivity were found to decrease with increase in temperature for all the hot pressed ZrB2 and ZrB2-SiC composites. At around 200 degrees C, thermal conductivity of ZrB2-SiC composites was found to be composition independent. Thermal conductivity of ZrB2-SiC composites was also correlated with theoretical predictions of the Maxwell Eucken relation. The dominated mechanisms of heat transport for all hot pressed ZrB2 and ZrB2-SiC composites at room temperature were confirmed by Wiedemann Franz analysis by using measured electrical conductivity of these materials at room temperature. It was found that electronic thermal conductivity dominated for all monolithic ZrB2 whereas the phonon contribution to thermal conductivity increased with SiC contents for ZrB2-SiC composites.

Self-assembled multicomponent Pd-6 aggregates showing low-humidity proton conduction

Two Pd-6 molecular aggregates (1 and 2), self-sorted via a template-free three-component self-assembly process, represent new examples of discrete architectures exhibiting very high proton conductivity 0.78 x 10(-3) S cm(-1) (1) and 0.22 X 10(-3) S cm(-1) (2)] at 300 K at low relative humidity (B46%) with low activation energy comparable to that of currently used Nafion in fuel cells.

Structural Insights into Proton Conduction in Gallic Acid-Isoniazid Cocrystals

Hydrated cocrystal of gallic acid-isoniazid displays a single crystal-to-single crystal transformation upon dehydration, resulting in a difference of three orders of magnitude in proton conduction. The conduction pathway is shown to follow the Grotthus mechanism, supported by theoretical (DFT) calculations.

Thermal conduction and multiphase gas in cluster cores

We examine the role of thermal conduction and magnetic fields in cores of galaxy clusters through global simulations of the intracluster medium (ICM). In particular, we study the influence of thermal conduction, both isotropic and anisotropic, on the condensation of multiphase gas in cluster cores. Previous hydrodynamic simulations have shown that cold gas condenses out of the hot ICM in thermal balance only when the ratio of the cooling time (t(cool)) and the free-fall time (t(ff)) is less than approximate to 10. Since thermal conduction is significant in the ICM and it suppresses local cooling at small scales, it is imperative to include thermal conduction in such studies. We find that anisotropic (along local magnetic field lines) thermal conduction does not influence the condensation criterion for a general magnetic geometry, even if thermal conductivity is large. However, with isotropic thermal conduction cold gas condenses only if conduction is suppressed (by a factor less than or similar to 0.3) with respect to the Spitzer value.

Structural Diversity in Multinuclear PdII Assemblies that Show Low- Humidity Proton Conduction

Systematic investigation on synergetic effects of geometry, length, denticity, and asymmetry of donors was performed through the formation of a series of uncommon Pd-II aggregates by employing the donor in a multicomponent self-assembly of a cis-blocked 90 degrees Pd-II acceptor and a tetratopic donor. Some of these assemblies represent the first examples of these types of structures, and their formation is not anticipated by only taking the geometry of the donor and the acceptor building units into account. Analysis of the crystal packing of the X-ray structure revealed several H bonds between the counteranions (NO3-) and water molecules (OHON). Moreover, H-bonded 3D-networks of water are present in the molecular pockets, which show water-adsorption properties with some variation in water affinity. Interestingly, these complexes exhibit proton conductivity (1.87x10(-5)-6.52x10(-4)Scm(-1)) at 296K and low relative humidity (ca. 46%) with activation energies of 0.29-0.46eV. Moreover, the conductivities further increase with the enhancement of humidity. The ability of these assemblies to exhibit proton-conducting properties under low-humidity conditions makes these materials highly appealing as electrolytes in batteries and in fuel-cell applications.

Modelling of transient heat conduction with diffuse interface methods

We present a survey on different numerical interpolation schemes used for two-phase transient heat conduction problems in the context of interface capturing phase-field methods. Examples are general transport problems in the context of diffuse interface methods with a non-equal heat conductivity in normal and tangential directions to the interface. We extend the tonsorial approach recently published by Nicoli M et al (2011 Phys. Rev. E 84 1-6) to the general three-dimensional (3D) transient evolution equations. Validations for one-dimensional, two-dimensional and 3D transient test cases are provided, and the results are in good agreement with analytical and numerical reference solutions.

An insight to the low temperature conduction mechanism of c-axis grown Al-doped ZnO, a widely used transparent conducting oxide

Al-doped ZnO thin films were synthesized from oxygen reactive co-sputtering of Al and Zn targets. Explicit doping of Al in the highly c-axis oriented crystalline films of ZnO was manifested in terms of structural optical and electrical properties. Electrical conduction with different extent of Al doping into the crystal lattice of ZnO (AZnO) were characterized by frequency dependent (40 Hz-50 MHz) resistance. From the frequency dependent resistance, the ac conduction of them, and correlations of localized charge particles in the crystalline films were studied. The dc conduction at the low frequency region was found to increase from 8.623 mu A to 1.14 mA for the samples AZnO1 (1 wt% Al) and AZnO2 (2 wt% Al), respectively. For the sample AZnO10 (10 wt% Al) low frequency dc conduction was not found due to the electrode polarization effect. The measure of the correlation length by inverse of threshold frequency (omega(0)) showed that on application of a dc electric field such length decreases and the decrease in correlation parameter(s) indicates that the correlation between potentials wells of charge particles decreases for the unidirectional nature of dc bias. The comparison between the correlation length and the extent of correlation in the doped ZnO could not be made due to the observation of several threshold frequencies at the extent of higher doping. Such threshold frequencies were explained by the population possibility of correlated charge carriers that responded at different frequencies. For AZnO2 (2% Al), the temperature dependent (from 4.5 to 288 K) resistance study showed that the variable range hopping mechanism was the most dominating conduction mechanism at higher temperature whereas at low temperature region it was influenced by the small polaronic hopping conduction mechanism. There was no significant influence found in these mechanisms on applications of 1, 2 and 3 V as biases.

On the Origin of Steep I-V Nonlinearity in Mixed-Ionic-Electronic-Conduction-Based Access Devices

Numerical modeling is used to explain the origin of the large ON/OFF ratios, ultralow leakage, and high ON-current densities exhibited by back-end-of-the-line-friendly access devices based on copper-containing mixed-ionic-electronic-conduction (MIEC) materials. Hall effect measurements confirm that the electronic current is hole dominated; a commercial semiconductor modeling tool is adapted to model MIEC. Motion of large populations of copper ions and vacancies leads to exponential increases in hole current, with a turn-ON voltage that depends on material bandgap. Device simulations match experimental observations as a function of temperature, electrode aspect ratio, thickness, and device diameter.

Injection barrier induced deviations in space charge limited conduction in doped poly(3-methylthiophene) based devices

The carrier density dependent current-voltage (J V) characteristics of electrochemically prepared poly(3-methylthiophene) (P3MeT) have been investigated in Pt/P3MeT/Al devices, as a function of temperature from 280 to 84 K. In these devices, the charge transport is found to be mainly governed by different transport regimes of space charge limited conduction (SCLC). In a lightly doped device, SCLC controlled by exponentially distributed traps (Vl+1 law, l > 1) is observed in the intermediate voltage range (0.5-2 V) at all temperatures. However, at higher bias (> 2 V), the current deviates from the usual Vl+1 law where the slope is found to be less than 2 of the logJ-logV plot, which is attributed to the presence of the injection barrier. These deviations gradually disappear at higher doping level due to reduction in the injection barrier. Numerical simulations of the Vl+1 law by introducing the injection barrier show good agreement with experimental data. The results show that carrier density can tune the charge transport mechanism in Pt/P3MeT/Al devices to understand the non-Ohmic behavior. The plausible reasons for the origin of injection barrier and the transitions in the transport mechanism with carrier density are discussed. (C) 2015 AIP Publishing LLC.

Computationally efficient models for simulation of non-ideal DC-DC converters operating in continuous and discontinuous conduction modes

This paper discusses dynamic modeling of non-isolated DC-DC converters (buck, boost and buck-boost) under continuous and discontinuous modes of operation. Three types of models are presented for each converter, namely, switching model, average model and harmonic model. These models include significant non-idealities of the converters. The switching model gives the instantaneous currents and voltages of the converter. The average model provides the ripple-free currents and voltages, averaged over a switching cycle. The harmonic model gives the peak to peak values of ripple in currents and voltages. The validity of all these models is established by comparing the simulation results with the experimental results from laboratory prototypes, at different steady state and transient conditions. Simulation based on a combination of average and harmonic models is shown to provide all relevant information as obtained from the switching model, while consuming less computation time than the latter.

Information Preservation Modeling of Rayleigh-Benard Transition from Thermal Conduction to Convection

Onset and evolution of the Rayleigh-Benard (R-B) convection are investigated using the Information Preservation (IP) method. The information velocity and temperature are updated using the Octant Flux Splitting (OFS) model developed by Masters & Ye based on the Maxwell transport equation suggested by Sun & Boyd. Statistical noise inherent in particle approaches such as the direct simulation Monte Carlo (DSMC) method is effectively reduced by the IP method, and therefore the evolutions from an initial quiescent fluid to a final steady state are shown clearly. An interesting phenomenon is observed: when the Rayleigh number (Ra) exceeds its critical value, there exists an obvious incubation stage. During the incubation stage, the vortex structure clearly appears and evolves, whereas the Nusselt number (Nu) of the lower plate is close to unity. After the incubation stage, the vortex velocity and Nu rapidly increase, and the flow field quickly reaches a steady, convective state. A relation of Nu to Ra given by IP agrees with those given by DSMC, the classical theory and experimental data.

Conduction-electron localized-moment interaction in palladium-silicon base amorphous alloys containing transition metals

The electrical and magnetic properties of amorphous alloys obtained by rapid quenching from the liquid state have been studied. The composition of these alloys corresponds to the general formula M_xPd_80-xSi₂₀, in which M stands for a metal of the first transition series between chromium and nickel and x is its atomic concentration. The concentration ranges within which an amorphous structure could be obtained were: from 0 to 7 for Cr, Mn and Fe, from 0 to 11 for Co and from 0 to 15 for Ni. A well-defined minimum in the resistivity vs temperature curve was observed for all alloys except those containing nickel. The alloys for which a resistivity minimum was observed had a negative magnetoresistivity approximately proportional to the square of the magnetization and their susceptibility obeyed the Curie-Weiss law in a wide temperature range. For concentrated Fe and Co alloys the resistivity minimum was found to coexist with ferromagnetism. These observations lead to the conclusion that the present results are due to a s-d exchange interaction. The unusually high resistivity minimum temperature observed in the Cr alloys is interpreted as a result of a high Kondo temperature and a large s-d exchange integral. A low Fermi energy of the amorphous alloys (3.5 eV) is also responsible for the anomalies due to the s-d exchange interaction.