Controlled synthesis of a large fraction of metallic single-walled carbon nanotube and semiconducting carbon nanowire networks

Controlled synthesis of both single-walled carbon nanotube and carbon nanowire networks using the same CVD reactor and Fe/Al2O3 catalyst by slightly altering the hydrogenation and temperature conditions is demonstrated. Structural, bonding and electrical characterization using SEM, TEM, Raman spectroscopy, and temperature-dependent resistivity measurements suggest that the nanotubes are of a high quality and a large fraction (well above the common 33% and possibly up to 75%) of them are metallic. On the other hand, the carbon nanowires are amorphous and semiconducting and feature a controlled sp2/sp3 ratio. The growth mechanism which is based on the catalyst nanoisland analysis by AFM and takes into account the hydrogenation and temperature control effects explains the observed switch-over of the nanostructure growth modes. These results are important to achieve the ultimate control of chirality, structure, and conductivity of one-dimensional all-carbon networks.

Electron-conduction mechanism and specific heat above transition temperature in LaFeAsO and BaFe2As2 superconductors

The ionization energy theory is used to calculate the evolution of the resistivity and specific heat curves with respect to different doping elements in the recently discovered superconducting pnictide materials. Electron-conduction mechanism in the pnictides above the structural transition temperature is explained unambiguously, which is also consistent with other strongly correlated materials, such as cuprates, manganites, titanates and magnetic semiconductors.

Surface waves at the interface of a dusty plasma and a metallic wall

Electrostatic surface waves at the interface between a low-temperature nonisothermal dusty plasma and a metallic wall are investigated. The plasma contains massive negatively charged impurity or dust particles. It is shown that the impurities can significantly alter the characteristics and damping of the surface waves by reducing their phase velocity and causing charging-related damping.

Templated i-PVD of metallic nanodot arrays

The results of numerical simulation of plasma-based, porous, template-assisted nanofabrication of Au nanodot arrays on highly-doped silicon taking into account typical electron density of low-temperature plasma of 1017-1018 m-3 and electron temperature of 2-5 eV are reported here. Three-dimensional microscopic topography of ion flux distribution over the outer and inner surfaces of the nanoporous template is obtained via numerical simulation of Au ion trajectories in the plasma sheath, in the close proximity of, and inside the nanopores. It is shown that, by manipulating the electron temperature, the cross-sheath potential drop, and by additionally altering the structure of the nanoporous template, one can control the ion fluxes within the nanopores, and eventually maximize the ion deposition onto the top surface of the developing crystalline Au nanodots (see top panel in the figure). In the same time, this procedure allows one to minimize amorphous deposits on the sidewalls that clutter and may eventually close the nanopores, thus disrupting the nanodot growth process, as it is shown in the bottom panel in the figure on the right.

Nanoparticle–electrode collisions as a dynamic seeding route for the growth of metallic nanostructures

The collisions between colloidal metal nanoparticles and a carbon electrode were explored as a dynamic method for the electrodeposition of a diverse range of electrocatalytically active Ag and Au nanostructures whose morphology is dominated by the electrostatic interaction between the charge of the nanoparticle and metal salt.

Charge mediated semiconducting-to-metallic phase transition in molybdenum disulphide monolayer and hydrogen evolution reaction in New 1T’ phase

The phase transition of single layer molybdenum disulphide (MoS2) from semi-conducting 2H to metallic 1T and then to 1T' phases, and the effect of the phase transition on hydrogen evolution reaction (HER) are investigated within this work by density functional theory. Experimentally, 2H-MoS2 has been widely used as an excellent electrode for HER and can get charged easily. Here we find that the negative charge has a significant impact on the structural phase transition in a MoS2 monolayer. The thermodynamic stability of 1T-MoS2 increases with the negative charge state, comparing with the 2H-MoS2 structure before phase transition and the kinetic energy barrier for a phase transition from 2H to 1T decreases from 1.59 eV to 0.27 eV when 4 e- are injected per MoS2 unit. Additionally, 1T phase is found to transform into the distorted structure (1T' phase) spontaneously. On their activity toward hydrogen evolution reaction, 1T'-MoS2 structure hydrogen coverage shows comparable hydrogen evolution reaction activity to the 2H-MoS2 structure. If the charge transfer kinetics is taken into account, the catalytic activity of 1T'-MoS2 is superior to that of 2H-MoS2. Our finding provides a possible novel method for phase transition of MoS2, and enriches understanding of the catalytic properties of MoS2 for HER.

Charge mediated semiconducting-to-metallic phase transition in molybdenum disulfide monolayer and hydrogen evolution reaction in new 1T′ phase

The phase transition of single layer molybdenum disulfide (MoS2) from semiconducting 2H to metallic 1T and then to 1T′ phases, and the effect of the phase transition on hydrogen evolution reaction (HER) are investigated within this work by density functional theory. Experimentally, 2H-MoS2 has been widely used as an excellent electrode for HER and can get charged easily. Here we find that the negative charge has a significant impact on the structural phase transition in a MoS2 monolayer. The thermodynamic stability of 1T-MoS2 increases with the negative charge state, comparing with the 2H-MoS2 structure before phase transition and the kinetic energy barrier for a phase transition from 2H to 1T decreases from 1.59 to 0.27 eV when 4e– are injected per MoS2 unit. Additionally, 1T phase is found to transform into the distorted structure (1T′ phase) spontaneously. On their activity toward hydrogen evolution reaction, 1T′-MoS2 structure shows comparable hydrogen evolution reaction activity to the 2H-MoS2 structure. If the charge transfer kinetics is taken into account, the catalytic activity of 1T′-MoS2 is superior to that of 2H-MoS2. Our finding provides a possible novel method for phase transition of MoS2 and enriches understanding of the catalytic properties of MoS2 for HER.

Virtues of marginally metallic oxides

Transition-metal oxides at the metal-insulator boundary, especially those belonging to the perovskite family, exhibit fascinating phenomena such as insulator-metal transitions controlled by composition, high-temperature superconductivity and giant magnetoresistance (GMR), Interestingly, many of these marginally metallic oxides obey the established criteria for metallicity and have a finite density of states at the Fermi;level. The perovskite manganates exhibiting GMR, on the other hand, are unusual in that they possess very high resistivities in the 'metallic' state and show no significant density of states at the Fermi level, Marginal metallicity in oxide systems is a problem of great complexity and contemporary interest and its understanding is of crucial significance to the diverse phenomena exhibited by these materials.

Micropillar compression studies on a bulk metallic glass in different structural states

Uniaxial compression experiments on 0.3, 1 and 3 mu m diameter micropillars of a Zr-based bulk metallic glass in as-cast, shot-peened and structurally relaxed conditions were conducted. Shear band formation and stable propagation is observed to be the plastic deformation mode in all cases, with no detectable difference in yield strength according to either size or condition. The limitations of uniaxial compression tests in assessing the influence of various material conditions on plasticity, when it is inhomogeneous in nature, are illustrated.

An Investigation of Friction During Friction Stir Welding of Metallic Materials

The technique of friction stir welding (FSW) puts effective use frictional heat for the purpose of joining metallic materials. In this research article, we present and discuss an experimental method to determine the coefficient of friction during FSW. The experiments were conducted to study the interaction between the FSW tool (a die steel) and the base metal (a high strength aluminum alloy) at various contact pressures (13MPa, 26MPa, and 39MPa) and rotation speeds (200rpm, 600rpm, 1000rpm, and 1400rpm). The experimental results, the microstructure, and the process temperature reveal the experimental setup to be capable of simulating the conditions during FSW. The coefficient of friction was found to vary from 0.15 to 1.4, and the temperature increased to as high as 450C. The coefficient of friction was found to increase with temperature. There exists a critical temperature at which point a steep increase in the coefficient of friction was observed. The critical temperature decreases from 250C at a contact pressure of 26MPa to 200C at contact pressure of 34MPa. Below the critical temperature at a specific contact pressure the maximum coefficient of friction is 0.6, and above the critical temperature it reaches a value as high as 1.4. The steep increase in the coefficient of friction is found to be due to the seizure phenomenon and the contact condition during FSW between the tool and the workpiece (base metal) is found to be sticking.

Composition-controlled metal-insulator transitions and minimum metallic conductivity in the oxide systems LaNi1-xMxO3 (M = Cr, Mn, Fe, or Co)

The composition-controlled metal-insulator transition in the perovskite systems LaNi1-xMxO3 (M = Cr, Mn, Fe, and Co) has been investigated by transport measurements over the temperature range 12-300 K. These systems, which have critical electron densities (nc) in the range (1-2) -1020 electrons cm-3, exhibit sharp metal-insulator transitions at the base temperature. The corresponding minimum metallic conductivity (Ï-min), separating the localized and itinerant electronic regimes, is of the order of 102 ohm-1 cm-1. Particular attention is paid to the idea of Ï-min scaling with nc, and our present results are compared with earlier studies of the metal-insulator transition in low (e.g., Ge:Sb) and high (e.g., metal-ammonia, supercritical Hg) electron-density systems. A link is established between the transport and magnetic properties of the title systems at the metal-insulator transition.

Enhanced ionic conduction in dispersed solid electrolyte systems CaF2---Al2O3 and CaF2---CeO2

Dispersions of Al2O3 as well as CeO2 in CaF2 are found to enhance the conductivity of CaF2. Both these systems are biphasic and the electrical conduction in them is purely ionic in nature. At 650 K the increase in the ionic conductivity of the dispersed solid electrolyte system CaF2---Al2O3 is by about two orders of magnitude in relation to the conductivity of the host electrolyte CaF2, whereas for the CaF2---CeO2 system it is about three orders of magnitude. Some aspects of the increase in the ionic conductivities of CaF2---Al2O3 and CaF2---CeO2 electrolytes can be explained by a recent theoretical model. It is proposed that a substantial enhancement in the vacancy concentration of CaF2, brought about by the attraction of F− ions to the surface of Al2O3 (or CeO2), is responsible for the low temperature increase in the ionic conductivity of CaF2.

Ultra-low conductivity noise in metallic nanowires

By modifying the electrodeposition technique, we have stabilized the silver nanowires (AgNWs) in high-energy hexagonal closed packed (hcp)structure. The conductivity noise measurements show that the noise magnitude in hcp silver nanowires is several orders of magnitude smaller than that of face centered cubic (fcc) silver nanowires, which is obtained by standard over potential lectrodeposition (OPD)technique. The reduction of noise can be attributed to the restricted dislocation dynamics in hcp AgNWs due to the presence of less number of slip systems. Temperature dependent noise measurements show that the noise magnitude in hcp AgNWs is weakly temperature dependent while in fcc AgNWs it is strong function of temperature.