The influence of fractionation on cell survival and premature differentiation after carbon ion irradiation

Carbon ion radiotherapy/Fractionated irradiation/R-BE/Premature terminal differentiation. To investigate the influence of fractionation on cell survival and radiation induced premature differentiation as markers for early and late effects after X-rays and carbon irradiation. Normal human fibroblasts NHDF, AG1522B and WI-38 were irradiated With 250 kV X-rays, or 266 MeV/u, 195 MeV/u and I I MeV/u carbon ions. Cytotoxicity was measured by a clonogenic survival assay or by determination of the differentiation pattern. Experiments with high-energy carbon ions show that fractionation induced repair effects are similar to photon irradiation. The RBE10 values for clonogenic survival are 1.3 and 1.6 for irradiation in one or two fractions for NHDF cells and around 1.2 for AG1522B cells regardless of the fractionation scheme. The RBE for a doubling of post mitotic fibroblasts (PMF) in the population is I for both single and two fractionated irradiation of NHDF cells. Using I I MeV/u carbon ions, no repair effect can be seen in WI-38 cells. The RBE10 for clonogenic survival is 3.2 for single irradiation and 4.9 for two fractionated irradiations. The RBE for a doubling of PMF is 3.1 and 5.0 for single and two fractionated irradiations, respectively. For both cell lines the effects of high-energy carbon ions representing the irradiation of the skin and the normal tissue in the entrance channel are similar to the effects of X-rays. The fractionation effects are maintained. For the lower energy, which is representative for the irradiation of the tumor region. RBE is enhanced for clonogenic survival as well as for premature terminal differentiation. Fractionation effects are not detectable. Consequently, the therapeutic ratio is significantly enhanced by fractionated irradiation with carbon ions.

Vacuum window of intermediate energy heavy-ion microbeam irradiation facility

The beam must be extracted into the air through the vacuum window to irradiate the living cell. In the window design, the material and thickness must be chosen to compromise the beam spot size broadening and the window safety. The structure-static analysis on the window of different structures and materials is done with the finite element analysis method, and the deformation and the equivalent stress axe simulated. The safety of these candidates is investigated using the intensity theory. In addition, the small angle scattering and the transverse range of ions are simulated using SRIM code, including all the effects on the beam spot size broadening, such as the incident ion energy, the material and the thickness of the window and the air composing. At last, the appropriate vacuum windows are presented, including the structure, material and thickness.

Temperature annealing of tracks induced by ion irradiation of graphite

Highly oriented pyrolytic graphite (HOPG) samples were irradiated by Xe ions of initial kinetic energy of 3 MeV/u. The irradiations were performed at temperatures of 500 and 800 K. Scanning tunneling microscopy (STM) images show that the tracks occasionally have elongated structures under high-temperature irradiation. The track creation yield at 800 K is by three orders of magnitude smaller compared to that obtained during room-temperature irradiation. STM and Raman spectra show that amorphization occurs in graphite samples irradiated at 500 K to higher fluences, but not at 800 K. The obtained experimental results clearly reveal that the irradiation under high temperature causes track annealing.

重离子诱变技术选育碱性蛋白酶高产菌株；The Selection for High-yield Alkaline Protease Producing Strain by Heavy-ion Irradiation

从采集的土壤样品中分离筛选出一株碱性蛋白酶产生菌G-41,经16S rRNA分子鉴定为芽孢杆菌属菌株。该菌株在发酵培养基中能产生较高产量的胞外碱性蛋白酶(1.7×104U/mL)。以G-41为出发菌株,对其进行重离子辐照诱变处理,获得突变株G-41-68,将该突变株再次经重离子诱变,从大量突变株中筛选出碱性蛋白酶高产菌株15Gy-54,其酶活力达到6.22×104U/mL。与出发菌株相比较,突变株G-41-68和15Gy-54的酶活力分别提高了1.58倍和2.65倍。对突变株15Gy-54的发酵条件进行了优化研究,结果表明,该菌株的碱性蛋白酶活力得到进一步提高,达到7.18×104U/mL,其最适发酵条件为:培养基(g/100mL)为胰蛋白胨1、酵母膏0.5、乳糖5、Na2HPO4·12H2O0.4、KH2PO40.03、Na2CO30.1、MgSO40.0481(4×10-3mol/L)、pH8.0,培养温度41℃,振荡培养时间42-48h。实验结果表明,重离子辐照诱变技术是一种非常有效的微生物诱变育种新技术。

Preservation of beam emittance in the presence of ion motion in future high-energy plasma-wakefield-based colliders.

The preservation of beam quality in a plasma wakefield accelerator driven by ultrahigh intensity and ultralow emittance beams, characteristic of future particle colliders, is a challenge. The electric field of these beams leads to plasma ions motion, resulting in a nonlinear focusing force and emittance growth of the beam. We propose to use an adiabatic matching section consisting of a short plasma section with a decreasing ion mass to allow for the beam to remain matched to the focusing force. We use analytical models and numerical simulations to show that the emittance growth can be significantly reduced.

Low energy C-13(+) and C-13(2+) ion irradiation of water ice

In this paper we report the results of the first experimental study of the irradiation of low temperature water ice (30 and 90 k) using low energy (4keV) C-13(+) and C-(2+) ions. (CO2)-C-13 and H2o2 were readily formed within the H2O ice with the product ion yield and grwoth rate observed to be highly dependent on both the sample temperature and the ion charge state.

Fabrication and characterisation of high resistivity SOI substrates for monolithic high energy physics detectors

Silicon on Insulator (SOI) substrates offer a promising platform for monolithic high energy physics detectors with integrated read-out electronics and pixel diodes. This paper describes the fabrication and characterisation of specially-configured SOI substrates using improved bonded wafer ion split and grind/polish technologies. The crucial interface between the high resistivity handle silicon and the SOI buried oxide has been characterised using both pixel diodes and circular geometry MOS transistors. Pixel diode breakdown voltages were typically greater than 100V and average leakage current densities at 70 V were only 55 nA/ sq cm. MOS transistors subjected to 24 GeV proton irradiation showed an increased SOI buried oxide trapped charge of only 3.45x1011cn-2 for a dose of 2.7Mrad