Effects of ion irradiation on the diffusion of pre-implanted B atoms in crystalline silicon

Autoria(s): LiuCL; SealyBJ; NejimA; GwilliamRM
Data(s)

2001
Identificador

http://ir.impcas.ac.cn/handle/113462/1501

http://www.irgrid.ac.cn/handle/1471x/127882
Fonte

LiuCL；SealyBJ；NejimA；GwilliamRM.Effects of ion irradiation on the diffusion of pre-implanted B atoms in crystalline silicon,HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION,2001,25(1):1238-1244
Palavras-Chave #implantation #transient enhanced diffusion #secondary ion mass spectrometer #crystalline silicon
Tipo

期刊论文
Acesso ao item digital