971 resultados para compressive stress
Resumo:
We present an extensive study on the structural, electrical and optical properties of InN thin films grown on c-Al2O3, GaN(130 nm)/Al2O3, GaN(200 nm)/Al2O3 and GaN(4 mu m)/Al2O3 by using plasma-assisted molecular beam epitaxy. The high resolution X-ray diffraction study reveals better crystalline quality for the film grown on GaN(4 mu m)/Al2O3 as compared to others. The electronic and optical properties seem to be greatly influenced by the structural quality of the films, as can be evidenced from Hall measurement and optical absorption spectroscopy. Kane's k.p model was used to describe the dependence of optical absorption edge of InN films on carrier concentration by considering the non-parabolic dispersion relation for carrier in the conduction band. Room temperature Raman spectra for the InN films grown on GaN show the signature of residual tensile stress in contrast to the compressive stress observed for the films grown directly on c-Al2O3. (C) 2012 Elsevier B.V. All rights reserved.
Resumo:
Size effect in ferroelectrics has been extensively investigated in the past with the general consensus that the long-range ferroelectric ordering gradually disappears with decreasing crystallite size, eventually leading to the paraelectric state. In this paper, we show that the compositions exhibiting giant tetragonality (c/a similar to 1.18) of the ferroelectric alloy system BiFeO3-PbTiO3 transform from a pure tetragonal phase to a state comprising tetragonal and rhombohedral phases as the average crystallite size is reduced from similar to 10 to similar to 1 mu m. It is argued that the increased surface energy in the smaller sized crystallites creates an equivalent compressive stress that drives the system towards tetragonal-rhombohedral criticality.
Resumo:
Mechanical properties of thin films such as residual stress and hardness are of paramount importance from the device fabrication point of view. Intrinsic stress in sputtered films can be tensile or compressive as decided by the number density and the energy of the plasma species striking the growing film. In the presence of hydrogen we analyzed the applicability of idealized stress reversal curve for amorphous silicon thin films deposited by DC, pulsed DC (PDC) and RF sputtering. We are successfully able to correlate the microstructure with the stress reversal and hardness. We observed a stress reversal from compressive to tensile with hydrogen incorporation. It was found that unlike in idealized stress reversal curve case, though the energy of plasma species is less in DC plasma, DC deposited films exhibit more compressive stress, followed by PDC and RF deposited films. A tendency towards tensile stress from compressive stress was observed at similar to 13, 18 and 23 at%H for DC, PDC and RF deposited films respectively, which is in exact agreement with the vacancy to void transition in the films. Regardless of the sputtering power mode, the hardness of a-Si:H films is found to be maximum at C-H similar to 10 at%H. Enhancement in hardness with C-H (up to C-H similar to 10 at%H) is attributed to increase of Si-H bonds. Beyond C-H similar to 10 at%H, hardness starts falling. (C) 2015 Elsevier Ltd. All rights reserved.
Resumo:
AlGaN/GaN high electron mobility transistor stacks deposited on a single growth platform are used to compare the most common transition, AlN to GaN, schemes used for integrating GaN with Si. The efficiency of these transitions based on linearly graded, step graded, interlayer, and superlattice schemes on dislocation density reduction, stress management, surface roughness, and eventually mobility of the 2D-gas are evaluated. In a 500 nm GaN probe layer deposited, all of these transitions result in total transmission electron microscopy measured dislocations densities of 1 to 3 x 10(9)/cm(2) and <1 nm surface roughness. The 2-D electron gas channels formed at an AlGaN-1 nm AlN/GaN interface deposited on this GaN probe layer all have mobilities of 1600-1900 cm(2)/V s at a carrier concentration of 0.7-0.9 x 10(13)/cm(2). Compressive stress and changes in composition in GaN rich regions of the AlN-GaN transition are the most effective at reducing dislocation density. Amongst all the transitions studied the step graded transition is the one that helps to implement this feature of GaN integration in the simplest and most consistent manner. (C) 2015 AIP Publishing LLC.
Resumo:
The molecular dynamics method is used to simulate microcrack healing during heating or/and under compressive stress. A centre microcrack in Cu crystal would be sealed under compressive stress or by heating. The role of compressive stress and heating in crack healing was additive. During microcrack healing, dislocation generation and motion occurred. When there were pre-existing dislocations around the microcrack, the critical temperature or compressive stress necessary for microcrack healing would decrease, and, the higher the number of dislocations, the lower the critical temperature or compressive stress. The critical temperature necessary for microcrack healing depended upon the orientation of the crack plane. For example, the critical temperature for the crack along the (001) plane was the lowest, i.e. 770K.
Resumo:
The properties of amorphous carbon (a-C) deposited using a filtered cathodic vacuum arc as a function of the ion energy and substrate temperature are reported. The sp3 fraction was found to strongly depend on the ion energy, giving a highly sp3 bonded a-C denoted as tetrahedral amorphous carbon (ta-C) at ion energies around 100 eV. The optical band gap was found to follow similar trends to other diamondlike carbon films, varying almost linearly with sp2 fraction. The dependence of the electronic properties are discussed in terms of models of the electronic structure of a-C. The structure of ta-C was also strongly dependent on the deposition temperature, changing sharply to sp2 above a transition temperature, T1, of ≈200°C. Furthermore, T1 was found to decrease with increasing ion energy. Most film properties, such as compressive stress and plasmon energy, were correlated to the sp3 fraction. However, the optical and electrical properties were found to undergo a more gradual transition with the deposition temperature which we attribute to the medium range order of sp2 sites. We attribute the variation in film properties with the deposition temperature to diffusion of interstitials to the surface above T1 due to thermal activation, leading to the relaxation of density in context of a growth model. © 1997 American Institute of Physics.
Resumo:
The addition of silicon to hydrogenated amorphous carbon can have the advantageous effect of lowering the compressive stress, improving the thermal stability of its hydrogen and maintaining a low friction coefficient up to high humidity. Most experiments to date have been on a-C1-xSix:H alloys deposited by RF plasma enhanced chemical vapour deposition (PECVD). This method gives alloys with considerable hydrogen content and only moderate hardness. Here, we use a high plasma density source, the electron cyclotron wave resonance (ECWR) source, to prepare films with a high deposition rate. The composition and bonding in the alloys is determined by XPS, visible and UV Raman and FTIR spectroscopy. We find that it is possible to produce hard, low stress, low friction, almost humidity insensitive a-C1-xSix:H alloys with a good optical transparency and a band gap over 2 eV.
Resumo:
The addition of silicon to hydrogenated amorphous carbon can have the advantageous effect of lowering the compressive stress, improving the thermal stability of its hydrogen, and maintaining a low friction coefficient up to high humidity. Most experiments to date have been on hydrogenated amorphous carbon-silicon alloys (a-C1-xSix:H) deposited by rf plasma enhanced chemical vapor deposition. This method gives alloys with sizeable hydrogen content and only moderate hardness. Here we use a high plasma density source known as the electron cyclotron wave resonance source to prepare films with higher sp3 content and lower hydrogen content. The composition and bonding in the alloys is determined by x-ray photoelectron spectroscopy, Rutherford backscattering, elastic recoil detection analysis, visible and ultraviolet (UV) Raman spectroscopy, infrared spectroscopy, and x-ray reflectivity. We find that it is possible to produce relatively hard, low stress, low friction, almost humidity insensitive a-C1-xSix:H alloys with a good optical transparency and a band gap well over 2.5 eV. The friction behavior and friction mechanism of these alloys are studied and compared with that of a-C:H, ta-C:H, and ta-C. We show how UV Raman spectroscopy allows the direct detection of Si-C, Si-Hx, and C-Hx vibrations, not seen in visible Raman spectra. © 2001 American Institute of Physics.
Resumo:
An investigation of fiber/matrix interfacial fracture energy is presented in this paper. Several existing theoretical expressions for the fracture energy of interfacial debonding are reviewed. For the single-fiber/matrix debonding and pull-out experimental model, a study is carried out on the effect of interfacial residual compressive stress and friction on interface cracking energy release rate.
Resumo:
The objective of the article is to present a unified model for the dynamic mechanical response of ceramics under compressive stress states. The model incorporates three principal deformation mechanisms: (i) lattice plasticity due to dislocation glide or twinning; (ii) microcrack extension; and (iii) granular flow of densely packed comminuted particles. In addition to analytical descriptions of each mechanism, prescriptions are provided for their implementation into a finite element code as well as schemes for mechanism transitions. The utility of the code in addressing issues pertaining to deep penetration is demonstrated through a series of calculations of dynamic cavity expansion in an infinite medium. The results reveal two limiting behavioral regimes, dictated largely by the ratio of the cavity pressure p to the material yield strength σY. At low values of p/σY, cavity expansion occurs by lattice plasticity and hence its rate diminishes with increasing σY. In contrast, at high values, expansion occurs by microcracking followed by granular plasticity and is therefore independent of σY. In the intermediate regime, the cavity expansion rate is governed by the interplay between microcracking and lattice plasticity. That is, when lattice plasticity is activated ahead of the expanding cavity, the stress triaxiality decreases (toward more negative values) which, in turn, reduces the propensity for microcracking and the rate of granular flow. The implications for penetration resistance to high-velocity projectiles are discussed. Finally, the constitutive model is used to simulate the quasi-static and dynamic indentation response of a typical engineering ceramic (alumina) and the results compared to experimental measurements. Some of the pertinent observations are shown to be captured by the present model whereas others require alternative approaches (such as those based on fracture mechanics) for complete characterization. © 2011 The American Ceramic Society.
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Based on the microscopic observations and measurements, the mechanical behavior of the surface-nanocrystallized Al-alloy material at microscale is investigated experimentally and theoretically. In the experimental research, the compressive stress-strain curves and the hardness depth curves are measured. In the theoretical simulation, based on the material microstructure characteristics and the experimental features of the compression and indentation, the microstructure cell models are developed and the strain gradient plasticity theory is adopted. The material compressive stress-strain curves and the hardness depth curves-are predicted and simulated. Through comparison of the experimental results with the simulation results, the material and model parameters are determined.
Resumo:
A mechanical model of a coating/laser pre-quenched steel substrate specimen with a crack oriented perpendicular to the interface between the coating and the hardened layer is developed to quantify the effects of the residual stress and hardness gradient on the crack driving force in terms of the J-integral. It is assumed that the crack tip is in the middle of the hardened layer of the pre-quenched steel substrate. Using a composite double cantilever beam model, analytical solutions can be derived, and these can be used to quantify the effects of the residual stress and the hardness gradient resulting from the pre-quenched steel substrate surface on the crack driving force. A numerical example is presented to investigate how the residual compressive stress, the coefficient linking microhardness and yield strength and the Young's modulus ratio of the hardened layer to the coating influence the crack driving force for a given crack length. (C) 2007 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
Resumo:
In order to investigate the transient thermal stress field in wall-shape metal part during laser direct forming, a FEM model basing on ANSYS is established, and its algorithm is also dealt with. Calculation results show that while the wall-shape metal part is being deposited, in X direction, the thermal stress in the top layer of the wall-shape metal part is tensile stress and in the inner of the wall-shape metal part is compressive stress. The reason causing above-mentioned thermal stress status in the wall-shape metal part is illustrated, and the influence of the time and the processing parameters on the thermal stress field in wall-shape metal part is also studied. The calculation results are consistent with experimental results in tendency.
Resumo:
A method was devised to evaluate the adhesion between a film and a substrate. A front-end coated bullet is accelerated by a gas gun and hits the substrate of the specimen under test. The impact generates a compressive stress pulse that propagates toward the film. After transmission through the interface, part of the pulse is reflected on the free surface of the film, and tensile stress arises at the film-substrate interface, possibly inducing debonding of the film. This dynamic process was demonstrated analytically and simulated numerically by the finite element method. The results validate the initial concept and lay the foundation for further optimization of this method.
Resumo:
This work is divided into two independent papers.
PAPER 1.
Spall velocities were measured for nine experimental impacts into San Marcos gabbro targets. Impact velocities ranged from 1 to 6.5 km/sec. Projectiles were iron, aluminum, lead, and basalt of varying sizes. The projectile masses ranged from a 4 g lead bullet to a 0.04 g aluminum sphere. The velocities of fragments were measured from high-speed films taken of the events. The maximum spall velocity observed was 30 m/sec, or 0.56 percent of the 5.4 km/sec impact velocity. The measured velocities were compared to the spall velocities predicted by the spallation model of Melosh (1984). The compatibility between the spallation model for large planetary impacts and the results of these small scale experiments are considered in detail.
The targets were also bisected to observe the pattern of internal fractures. A series of fractures were observed, whose location coincided with the boundary between rock subjected to the peak shock compression and a theoretical "near surface zone" predicted by the spallation model. Thus, between this boundary and the free surface, the target material should receive reduced levels of compressive stress as compared to the more highly shocked region below.
PAPER 2.
Carbonate samples from the nuclear explosion crater, OAK, and a terrestrial impact crater, Meteor Crater, were analyzed for shock damage using electron para- magnetic resonance, EPR. The first series of samples for OAK Crater were obtained from six boreholes within the crater, and the second series were ejecta samples recovered from the crater floor. The degree of shock damage in the carbonate material was assessed by comparing the sample spectra to spectra of Solenhofen limestone, which had been shocked to known pressures.
The results of the OAK borehole analysis have identified a thin zone of highly shocked carbonate material underneath the crater floor. This zone has a maximum depth of approximately 200 ft below sea floor at the ground zero borehole and decreases in depth towards the crater rim. A layer of highly shocked material is also found on the surface in the vicinity of the reference bolehole, located outside the crater. This material could represent a fallout layer. The ejecta samples have experienced a range of shock pressures.
It was also demonstrated that the EPR technique is feasible for the study of terrestrial impact craters formed in carbonate bedrock. The results for the Meteor Crater analysis suggest a slight degree of shock damage present in the β member of the Kaibab Formation exposed in the crater walls.