Plan uchastka kolonizat︠s︡ionnogo fonda poselok "Chervonnyĭ" ( Ėrbardaĭter), Dnepro-Petrovskogo okruga, Sinelʻnikovskogo raĭona, ploshchadiʻ︠u︡ 793 desi︠a︡tin

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Plan uchastka kolfondalitera "D" Krivorogskogo okruga Mikhaĭlovskogo raĭona ploshchchadiʻ︠u︡ 874 desi︠a︡tin

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Plan zemelʻnogo otvoda kolfonda "Niva" Krivorogskogo okruga Sofievskogo raĭona ploshchadiʻ︠u︡ 861 desi︠a︡tin

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Plan zemelʻnogo otvoda kolfonda "Novai︠a︡ Zhiznʻ" Krivorogskogo okruga, Mikhaĭlovskogo raĭona ploshchadiʻ︠u︡ 303 desi︠a︡tin

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Plan zemelʻnogo otvoda kollektiva "Novyĭ Putʻ" Krivorogskogo okruga Mikhaĭlovskogo raĭona ploshchadiʻ︠u︡ 717 desi︠a︡tin

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Plan uchastka gosfonda kollektiva "Trud" Krivorogskogo okruga i raĭona ploshchadiʻ︠u︡ 107 desi︠a︡tin

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Plan zemelʻnogo otvoda s.-kh. arteli "Krasnyĭ Pakharʻ" Krivorogskogo okruga, Sofievskogo raĭona ploshchadiʻ︠u︡ 1380 desi︠a︡tin

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Some properties of indium-tin oxide-films

Thin films of indium-tin oxide have been deposited by DC diode sputtering from an indium-tin alloy target in an argon, hydrogen and oxygen atmosphere. Films with sheet resistance of 11 ohms/square and 80% light transmission have been obtained. The effect of cathode composition and gas mixture on sheet resistance and optical transmission properties of the films have been studied.

Catalytic vapor-phase oxidation of p-xylene over tin vanadate

Rates of oxidation of p-xylene were measured in the temperature range 320 to 420 °C using tin vanadate as catalyst in an isothermal differential flow reactor. The amounts of p-xylene converted were determined by analyzing the main products (p-tolualdehyde, maleic anhydride, p-toluic acid and traces of terephthalic acid). Negligible amounts of products of complete combustion were formed. The reaction rates obtained for p-xylene followed the relation, Image based on the redox model. The mechanism of the reaction was determined by conducting different sets of experiments and it was found that the reaction followed the parallel-consecutive mechanism, in which p-tolualdehyde and maleic anhydride were formed from the parallel route whereas p-toluic acid was formed from the consecutive route.

Two-dimensional tin disulfide nanosheets for enhanced sodium storage

Sodium-ion batteries (SIBs) are considered as complementary alternatives to lithium-ion batteries for grid energy storage due to the abundance of sodium. However, low capacity, poor rate capability, and cycling stability of existing anodes significantly hinder the practical applications of SIBs. Herein, ultrathin two-dimensional SnS2 nanosheets (3-4 nm in thickness) are synthesized via a facile refluxing process toward enhanced sodium storage. The SnS2 nanosheets exhibit a high apparent diffusion coefficient of Na+ and fast sodiation/desodiation reaction kinetics. In half-cells, the nanosheets deliver a high reversible capacity of 733 mAh g-1 at 0.1 A g-1, which still remains up to 435 mAh g-1 at 2 A g-1. The cell has a high capacity retention of 647 mA h g-1 during the 50th cycle at 0.1 A g-1, which is by far the best for SnS2, suggesting that nanosheet morphology is beneficial to improve cycling stability in addition to rate capability. The SnS2 nanosheets also show encouraging performance in a full cell with a Na3V2(PO4)3 cathode. In addition, the sodium storage mechanism is investigated by ex situ XRD coupled with high-resolution TEM. The high specific capacity, good rate capability, and cycling durability suggest that SnS2 nanosheets have great potential working as anodes for high-performance SIBs. © 2015 American Chemical Society.

The effects of humidity on tin whisker growth by immersion tin plating and tin solder dipping surface finishes

The drive to replace lead (Pb) from electronics has led to the replacement of tin (Sn) alloys as the terminal plating for electronic devices. However, the deposition of Sn based alloys as the component surface finish tends to induce Sn whisker that causes unintended electric shorts when the conductive whiskers grow across to the adjacent conductor. Internal stress is considered as the driving force that causes the growth of Sn whiskers. In this study, stress type of elevated temperature/ humidity exposure at 55C/85%RH with the storage for up to 24 months was conducted to define the acceleration factor in samples with deposition of immersion Sn plating and Sn solder dipping. The addition of Nickel (Ni) under-layer was also applied to examine the correlation to field conditions. The results showed that the whisker length increased in high humidity irrespective of the deposition methods. It was also shown that pure Sn solder dipping mitigated the whisker growth but does not completely prevent it when alloying Sn with 0.4%wtCu. Additionally, Ni under-layer was indicated to be more efficient in mitigating the growth of whisker by prolonging the incubation time for whisker formation.

Photocatalytic activity of tin-substituted TiO2 in visible light

Ultrafine powders of (Ti1-xSnx)O2, 0tinization) in the visible light region (420-550 nm) for H2 production from aqueous solutions containing sacrificial donors such as hypophosphite. The spectral sensitization is shown to be due to peroxotitanium species present in the lattice.

Synthesis and characterisation of co-evaporated tin sulphide thin films

Tin sulphide films were grown at different substrate temperatures by a thermal co-evaporation technique. The crystallinity of the films was evaluated from X-ray diffraction studies. Single-phase SnS films showed a strong (040) orientation with an orthorhombic crystal structure and a grain size of 0.12 mu m. The films showed an electrical resistivity of 6.1 Omega cm with an activation energy of 0.26 eV. These films exhibited an optical band gap of 1.37 eV and had a high optical absorption coefficient (> 10(4) cm(-1)) above the band-gap energy. The results obtained were analysed to evaluate the potentiality of the co-evaporated SnS films as an absorber layer in solar photovoltaic devices.

Polycrystalline Lead Tin Chalcogenide Thin Film Grown by Spray Pyrolysis

PbSnS2 thin film has been prepared for the first time by spray pyrolysis technique on FTO substrate at 570K. The preliminary optical and structural characteristics of the film have been reported. The optical studies showed that the value of the fundamental absorption edge lies at 1.47eV and a low energy absorption band tail has been observed. The prepared film is p- type electrical conductivity, polycrystalline in nature and has an orthorhombic crystal structure. The value of an average grain size of the film is 350Å.