Optical and electrical properties of co-sputtered amorphous transparent conducting zinc indium tin oxide thin films


Autoria(s): Jayaraj, M K
Data(s)

01/09/2008

01/09/2008

19/10/2007

Resumo

Highly conductive and transparent thin films of amorphous zinc indium tin oxide are prepared at room temperature by co-sputtering of zinc 10 oxide and indium tin oxide. Cationic contents in the films are varied by adjusting the power to the sputtering targets. Optical transmission study of 11 films showed an average transmission greater than 85% across the visible region. Maximum conductivity of 6×102 S cm−1 is obtained for Zn/In/ 12 Sn atomic ratio 0.4/0.4/0.2 in the film. Hall mobility strongly depends on carrier concentration and maximum mobility obtained is 18 cm2 V−1 s−1 13 at a carrier concentration of 2.1×1020 cm−3. Optical band gap of films varied from 3.44 eV to 3 eV with the increase of zinc content in the film 14 while the refractive index of the films at 600 nm is about 2.0.

Identificador

www.elsevier.com/locate/tsf, www.sciencedirect.com

http://dyuthi.cusat.ac.in/purl/792

Idioma(s)

en

Publicador

Elsevier

Palavras-Chave #Amorphous oxides #Transparent conducting oxides #Zinc indium tin oxide #Co-sputtering
Tipo

Working Paper