Experimental Investigation on Switching Characteristics of High-Current Insulated Gate Bipolar Transistors at Low Currents

Insulated gate bipolar transistors (IGBTs) are used in high-power voltage-source converters rated up to hundreds of kilowatts or even a few megawatts. Knowledge of device switching characteristics is required for reliable design and operation of the converters. Switching characteristics are studied widely at high current levels, and corresponding data are available in datasheets. But the devices in a converter also switch low currents close to the zero crossings of the line currents. Further, the switching behaviour under these conditions could significantly influence the output waveform quality including zero crossover distortion. Hence, the switching characteristics of high-current IGBTs (300-A and 75-A IGBT modules) at low load current magnitudes are investigated experimentally in this paper. The collector current, gate-emitter voltage and collector-emitter voltage are measured at various low values of current (less than 10% of the device rated current). A specially designed in-house constructed coaxial current transformer (CCT) is used for device current measurement without increasing the loop inductance in the power circuit. Experimental results show that the device voltage rise time increases significantly during turn-off transitions at low currents.

Experimental Investigation on Switching Characteristics of High-Current Insulated Gate Bipolar Transistors at Low Currents

Insulated gate bipolar transistors (IGBTs) are used in high-power voltage-source converters rated up to hundreds of kilowatts or even a few megawatts. Knowledge of device switching characteristics is required for reliable design and operation of the converters. Switching characteristics are studied widely at high current levels, and corresponding data are available in datasheets. But the devices in a converter also switch low currents close to the zero crossings of the line currents. Further, the switching behaviour under these conditions could significantly influence the output waveform quality including zero crossover distortion. Hence, the switching characteristics of high-current IGBTs (300-A and 75-A IGBT modules) at low load current magnitudes are investigated experimentally in this paper. The collector current, gate-emitter voltage and collector-emitter voltage are measured at various low values of current (less than 10% of the device rated current). A specially designed in-house constructed coaxial current transformer (CCT) is used for device current measurement without increasing the loop inductance in the power circuit. Experimental results show that the device voltage rise time increases significantly during turn-off transitions at low currents.

A comunidade de anuros do folhiço da Serra das Torres, sul do Espírito Santo, no sudeste do Brasil: A sazonalidade afeta os parâmetros da comunidade?

O presente estudo trás informações acerca da comunidade de anfíbios anuros do folhiço nas florestas que compõem a região da Serra das Torres, sul do Espírito Santo, sudeste do Brasil. Foram utilizados métodos de parcelas 4 x 4 m para obter os primeiros dados de sazonalidade na composição, massa e densidade no estado do Espírito Santo. Amostragens de campo foram realizadas durante as estações seca e de chuvas, no período de junho de 2009 a dezembro de 2010. Foram registrados 348 indivíduos com média de 1,0 0,1 ind/parcela, em 14 espécies associadas ao folhiço do chão da floresta. As curvas de rarefação e do coletor apresentaram assíntotas tendendo a estabilizarem. A densidade de anuros na área estudada foi de 6,59 ind/100 m e a biomassa total 413,9 g. Brachycephalus didactylus foi a espécie com maior densidade (3,8 ind/100 m) e a maior abundância (100 indivíduos ou 40,6% da comunidade geral), entretanto, apresentou biomassa relativamente baixa (16,8 g) quando comparada às demais espécies como Haddadus binotatus (239,6 g ou 57,2% da biomassa total da comunidade). Não foi registrada nenhuma variação sazonal em relação à densidade ou biomassa na comunidade. A umidade relativa do ar e a profundidade do folhiço foram fatores ambientais significativos para a abundância de indivíduos, enquanto a temperatura e a presença de rochas ou árvores no interior das parcelas não foram importantes na estruturação da comunidade daquela área. Este estudo aumenta a distribuição geográfica de Brachycephalus didactylus, Zachaenus parvulus, Physalaemus crombiei, Ischnocnema cf. bolbodactyla, Ischnocnema gr. lactea e Leptodactylus cf. bokermanni.

Caracterização e manejo de resíduos gerados nos laboratórios do Instituto de Biologia da Universidade do Estado do Rio de Janeiro, IBRAG, UERJ.

O crescimento da população mundial, aumento da industrialização e consumo de bens e serviços, tem aumentado significativamente a geração de resíduos que vem causando impactos negativos na saúde humana e ambiental. Neste contexto, se destaca a geração de produtos perigosos, tais como, os resíduos de serviços de saúde- RSS. Por apresentarem riscos à saúde da população e do meio ambiente, recomendações, normas e legislações surgiram para orientar a melhor maneira o manejo e disposição final destes resíduos. No Brasil, as resoluções NBR 306/04 e CONAMA 358/05 dão diretrizes para a elaboração de um Plano de Gerenciamento de Resíduos de Serviços de Saúde-PGRSS. Os laboratórios de pesquisa e ensino, como geradores de RSS, precisam se adequar à legislação, porém existem poucos estudos e a legislação não aborda especificamente os resíduos destes laboratórios. Os laboratórios e unidades da UERJ, geradores de RSS, não possuem PGRSS. Na UERJ, somente dois estudos levantaram os resíduos gerados em laboratórios, entretanto os dados levantados para o Instituto de Biologia são incompletos. Este estudo buscou avaliar o manejo dos resíduos biológico, químico, radioativo e perfurocortante nos laboratórios do Instituto de Biologia. Os dados foram coletados pelas informações dadas pelos professores, funcionários ou alunos dos laboratórios e por observação direta. Os dados de manejo foram analisados de acordo com a RDC 306/04 Anvisa, da Resolução CONAMA 358/05 e das fichas de segurança dos produtos químicos. Foram estudados 83% dos laboratórios do Instituto de Biologia. Destes, 43% geram resíduos químicos. Dos laboratórios caracterizados, 19 laboratórios geram somente resíduo químico. No pavilhão Américo Piquet estão localizados 63% dos laboratórios geradores de resíduos biológicos, químicos, perfurocortantes ou radioativos. Do total de resíduos gerados nos laboratórios, cerca de 80% foi de resíduo biológico, 15% de resíduo químico e 5% de resíduo perfurocortante. O manejo dos resíduos nos laboratórios é realizado de maneira confusa, geralmente os erros estão na segregação, identificação e acondicionamento. De maneira geral, as informações sobre o manejo utilizado para os resíduos são incompletas, desconhecidas ou imprecisas. As ações incorretas do manejo de resíduos são características para cada tipo de resíduo; no resíduo biológico, freqüentemente, encontraram-se resíduos comuns. O resíduo químico é geralmente descartado sem tratamento prévio na rede de esgoto. O resíduo radioativo não possui identificação e acompanhamento do decaimento, para posterior descarte. No resíduo perfurocortante encontrou-se, freqüentemente, resíduo biológico e químico misturados. Para o sucesso de um futuro Plano de Gerenciamento de Resíduos, a capacitação dos profissionais é muito importante. A Instituição deve investir na consolidação desse trabalho, considerando que ela não pode se furtar de adotar uma postura pró-ativa com relação aos problemas ambientais, sejam eles dirigentes da instituição, ou profissionais que ali atuam. Espera-se que essa pesquisa possa auxiliar neste sentido.

Investigation into IGBT dV/dt during turn-off and its temperature dependence

In many power converter applications, particularly those with high variable loads, such as traction and wind power, condition monitoring of the power semiconductor devices in the converter is considered desirable. Monitoring the device junction temperature in such converters is an essential part of this process. In this paper, a method for measuring the insulated gate bipolar transistor (IGBT) junction temperature using the collector voltage dV/dt at turn-OFF is outlined. A theoretical closed-form expression for the dV/dt at turn-OFF is derived, closely agreeing with experimental measurements. The role of dV/dt in dynamic avalanche in high-voltage IGBTs is also discussed. Finally, the implications of the temperature dependence of the dV/dt are discussed, including implementation of such a temperature measurement technique. © 2006 IEEE.

IGBT series connection under Active Voltage Control with temporary clamp

This paper presents the use of an Active Voltage Control (AVC) technique for balancing the voltages in a series connection of Insulated Gate Bipolar Transistors (IGBTs). The AVC technique can control the switching trajectory of an IGBT according to a pre-set reference signal. In series connections, every series connected IGBT follows the reference and so that the dynamic voltage sharing is achieved. For the static voltage balancing, a temporary clamp technique is introduced. The temporary clamp technique clamps the collector-emitter voltage of all the series connected IGBTs at the ideal voltage so that the IGBTs will share the voltage evenly. © 2012 IEEE.

A base-emitter self-aligned multi-finger Si1-xGex/Si power heterojunction bipolar transistor

With a crystal orientation dependent on the etch rate of Si in KOH-based solution, a base-emitter self-aligned large-area multi-linger configuration power SiGe heterojunction bipolar transistor (HBT) device (with an emitter area of about 880 mu m(2)) is fabricated with 2 mu m double-mesa technology. The maximum dc current gain is 226.1. The collector-emitter junction breakdown voltage BVCEO is 10 V and the collector-base junction breakdown voltage BVCBO is 16 V with collector doping concentration of 1 x 10(17) cm(-3) and thickness of 400 nm. The device exhibited a maximum oscillation frequency f(max) of 35.5 GHz and a cut-off frequency f(T) of 24.9 GHz at a dc bias point of I-C = 70 mA and the voltage between collector and emitter is V-CE = 3 V. Load pull measurements in class-A operation of the SiGe HBT are performed at 1.9 GHz with input power ranging from 0 dBm to 21 dBm. A maximum output power of 29.9 dBm (about 977 mW) is obtained at an input power of 18.5 dBm with a gain of 11.47 dB. Compared to a non-self-aligned SiGe HBT with the same heterostructure and process, f(max) and f(T) are improved by about 83.9% and 38.3%, respectively.

Hybrid metal-base transistor with base of sulfonated polyaniline and fullerene emitter

We demonstrate hybrid vertical architecture transistors that operate like metal-base transistors, using n-type silicon as the collector, sulfonated polyaniline as the base, and C-60 fullerene as the emitter. Electrical measurements suggest that the sulfonated polyaniline base effectively screens the emitter from electric field variations occurring in the collector leading to the metal-base transistor behavior.

High gain in hybrid transistors with BAlq(3)/Alq(3) isotype heterostructure emitter

We report the fabrication of permeable metal-base transistors based on bis(2-methyl-8-quinolinolato-N1,O8)-(1,1'-biphenyl-4-olato) aluminum (BAlq(3))/tri(8-hydroxyquinoline) aluminum (Alq(3)) isotype heterostructure as emitter layer. In this transistor, n-Si was used as the collector, LiF/Al as the emitter electrode, and Au/Al bilayer metal as the base. We show that the leakage current is greatly reduced in Al/n-Si/Au/Al/BAlq(3)/Alq(3)/LiF/Al devices with respect to Al/n-Si/Au/Al/Alq(3)/LiF/Al devices due to the utilization of BAlq(3)/Alq(3) isotype heterostructure emitter, leading to high common-base and common-emitter current gains at low driving voltages.

Ambipolar permeable metal-base transistor based on NPB/C-60 heterojunction

In this paper, we report the fabrication of permeable metal-base organic transistors based on N,N'-diphenyl-N,N'-bis(1-naphthylphenyl)-1,1'-biphenyl-4,4'-diamine (NPB)/C-60 heterojunction as both emitter and collector. By applying different polarities of voltage bias to the collector and the base, and input current to the emitter, the ambipolar behavior can be observed. The device demonstrates excellent common-base characteristics both in P-type and N-type modes with common-base current gains of 0.998 and 0.999, respectively.

Synthesis using electrospinning and stabilization of single layer macroporous films and fibrous networks of poly(vinyl alcohol)

We demonstrated in this paper an electrospinning technique could be employed to prepare the single layer macroporous films and fibrous networks of poly(vinyl alcohol) (PVA). A crucial element using electrospinning on the development of these electrospun structures was to shorten the distance of from the needle tip to the collector (L), which resulted in the bond of the wet fibers deposited on the collector at the junctions. The morphologies and average pore size of electrospun structures of PVA were mainly predominated by L and the time of collecting wet fibers on the collector. In addition, experimental results showed that an increase of the PVA concentration or a decrease of the applied voltage could also diminish slightly the average pore size of electrospun productions. Furthermore, a 60 degrees C absolute ethanol soak to PVA electrospun production led them to be able to stabilize in water for 1 month against disintegration. Differential scanning calorimetry (DSC) demonstrated that the 60 degrees C ethanol soak enhanced the degree of crystallinity of PVA production. The structural characteristic of macroporous films and networks in combination with their easy processability suggests potential utility in issue engineering applications.

Deposition of silver nanoparticles in geochemically heterogeneous porous media: predicting affinity from surface composition analysis.

The transport of uncoated silver nanoparticles (AgNPs) in a porous medium composed of silica glass beads modified with a partial coverage of iron oxide (hematite) was studied and compared to that in a porous medium composed of unmodified glass beads (GB). At a pH lower than the point of zero charge (PZC) of hematite, the affinity of AgNPs for a hematite-coated glass bead (FeO-GB) surface was significantly higher than that for an uncoated surface. There was a linear correlation between the average nanoparticle affinity for media composed of mixtures of FeO-GB and GB collectors and the relative composition of those media as quantified by the attachment efficiency over a range of mixing mass ratios of the two types of collectors, so that the average AgNPs affinity for these media is readily predicted from the mass (or surface) weighted average of affinities for each of the surface types. X-ray photoelectron spectroscopy (XPS) was used to quantify the composition of the collector surface as a basis for predicting the affinity between the nanoparticles for a heterogeneous collector surface. A correlation was also observed between the local abundances of AgNPs and FeO on the collector surface.

Investigation of an electron string ion source with field emission cathode

The string mode of operation for an electron beam ion source uses axially oscillating electrons in order to reduce power consumption, also simplifying the construction by omitting the collector with cooling requirements and has been called electron string ion source (ESIS). We have started a project (supported by INTAS and GSI) to use Schottky field emitting cathode tips for generating the electron string. The emission from these specially conditioned tips is higher by orders of magnitude than the focused Brillouin current density at magnetic fields of some Tesla and electron energies of some keV. This may avoid the observed instabilities in the transition from axially oscillating electrons to the string state of the electron plasma, opening a much wider field of possible operating parameters for an ESIS. Besides the presentation of the basic features, we emphasize in this paper a method to avoid damaging of the field, emission tip by backstreaming ions. (C) 2008 American Institute of Physics.

Sistemas solares térmicos por medida: avaliação de comportamento térmico a longo prazo

Tese de mestrado integrado em Engenharia da Energia e do Ambiente, apresentada à Universidade de Lisboa, através da Faculdade de Ciências, 2014

Custom House Niagara forms, 1833

In 1833 William Clarke, the collector of customs at Niagara, completed and signed four forms for the movement of goods between Niagara and York, and Niagara and Brantford. The forms were issued to the firm of Lewis & Gray, James Armstrong, J.A. Wilks, and William Blackely. The goods being transported included scythes, corn brooms, hide whips, sacks, snuff, shovels, spades and two apple trees.